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Si4816DY SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si4816DY SPICE Device Model Si4816DY SPICE Device Model ECAD Model Vishay Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Original PDF

Si4816DY SPICE Device Model Datasheets Context Search

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52015 datasheet

Abstract: Si4816DY
Text: SPICE Device Model Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode , -52015Rev. C, 03-Oct-05 www.vishay.com 1 SPICE Device Model Si4816DY Vishay Siliconix SPECIFICATIONS , : 71665 S-52015Rev. C, 03-Oct-05 SPICE Device Model Si4816DY Vishay Siliconix COMPARISON OF MODEL , , 03-Oct-05 www.vishay.com 3 SPICE Device Model Si4816DY Vishay Siliconix Channel , the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline


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PDF Si4816DY 18-Jul-08 52015 datasheet
2011 - marking code vishay soic

Abstract: No abstract text available
Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT , Typ. 48 80 28 Max. 60 100 35 °C/W Unit Si4816DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 , damage to the device . These are stress ratings only, and functional operation of the device at these or , implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71121 S09-0868-Rev. G, 18-May-09 Si4816DY Vishay Siliconix CHANNEL


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PDF Si4816DY 2002/95/EC Si4816DY-T1-E3 Si4816DY-T1-GE3 11-Mar-11 marking code vishay soic
2009 - Si4816DY

Abstract: Si4816DY-T1-E3 Si4816D
Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES , W46BAA. Document Number: 71121 S09-0868-Rev. G, 18-May-09 www.vishay.com 1 Si4816DY Vishay , damage to the device . These are stress ratings only, and functional operation of the device at these or , implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71121 S09-0868-Rev. G, 18-May-09 Si4816DY Vishay


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PDF Si4816DY 2002/95/EC 18-Jul-08 Si4816DY-T1-E3 Si4816D
2011 - Si4816DY

Abstract: Si4816DY-T1-E3
Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES , W46BAA. Document Number: 71121 S09-0868-Rev. G, 18-May-09 www.vishay.com 1 Si4816DY Vishay , damage to the device . These are stress ratings only, and functional operation of the device at these or , implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71121 S09-0868-Rev. G, 18-May-09 Si4816DY Vishay


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PDF Si4816DY 2002/95/EC 11-Mar-11 Si4816DY-T1-E3
Not Available

Abstract: No abstract text available
Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES , -May-09 www.vishay.com 1 Si4816DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted , beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions , absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com


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PDF Si4816DY 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2006 - SI4816BDY

Abstract: MOSFET SPECIFICATIONS Si4816BDY-T1-E3 Si4816DY-T1-E3 PD1.4 Si4816DY Si4816DY-T1 73294
Text: Specification Comparison Vishay Siliconix Si4816BDY vs. Si4816DY Description: Dual N-Channel , , unless otherwise noted Parameter Symbol Si4816BDY Ch-1 Si4816DY Ch-2 Ch-1 Ch , SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Si4816BDY Min Typ Si4816DY Max , Symbol Si4816BDY Min Typ Si4816DY Max Min Typ Max Unit Dynamic Total Charge , Parameter Symbol Si4816BDY Min Si4816DY Typ Max 0.47 0.36 Min Typ Max 0.50


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PDF Si4816BDY Si4816DY Si4816BDY-T1-E3 Si4816DY-T1-E3 Si4816BDY-T1 Si4816DY-T1 10-Nov-06 MOSFET SPECIFICATIONS PD1.4 73294
2008 - Not Available

Abstract: No abstract text available
Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES rDS , Ordering Information: Si4816DY Si4816DY-T1 (with Tape and Reel) Si4816DY-E3 (Lead (Pb)-Free , Max 90 125 63 Max 53 100 30 Max 60 100 35 Unit _C/W 1 Si4816DY Vishay Siliconix , : 71121 S-51414-Rev. F, 01-Aug-05 Si4816DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS , 50 75 100 125 150 TJ ­ Junction Temperature (_C) www.vishay.com 3 Si4816DY


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PDF Si4816DY Si4816DY-T1 Si4816DY--E3 Si4816DY-T1--E3 18-Jul-08
2005 - 51414

Abstract: No abstract text available
Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES rDS , Ordering Information: Si4816DY Si4816DY-T1 (with Tape and Reel) Si4816DY-E3 (Lead (Pb)-Free , Max 90 125 63 Max 53 100 30 Max 60 100 35 Unit _C/W 1 Si4816DY Vishay Siliconix , : 71121 S-51414-Rev. F, 01-Aug-05 Si4816DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS , 50 75 100 125 150 TJ ­ Junction Temperature (_C) www.vishay.com 3 Si4816DY


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PDF Si4816DY Si4816DY-T1 Si4816DY--E3 Si4816DY-T1--E3 08-Apr-05 51414
2012 - Not Available

Abstract: No abstract text available
Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT , Typ. 48 80 28 Max. 60 100 35 °C/W Unit Si4816DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 , damage to the device . These are stress ratings only, and functional operation of the device at these or , implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71121 S09-0868-Rev. G, 18-May-09 Si4816DY Vishay Siliconix CHANNEL


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PDF Si4816DY 2002/95/EC Si4816DY-T1-E3 Si4816DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
sud*50n025-06p

Abstract: SI9120 SUD70N03-04P SI9119 Si7810DN sud*50n025-09p sum45n25 si9110 SI2301ADS SI4732CY
Text: up to date information, package and device function selector guides, data sheets, SPICE models, a , isolated. A few critical device specifications are provided and sorted by VDS, VGS, package and then rDS , single device . Combining greatly reduced switching losses with on-resistance, WFET Power MOSFETs , DPAK MOSFETs with a PowerPAK SO-8 device that's less than half as big (32.6 mm2 versus 70 mm2) and , supplier of this device type, with the best on-resistance and 10 times as many MOSFETs as any other


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PDF VSA-SG0019-0310 sud*50n025-06p SI9120 SUD70N03-04P SI9119 Si7810DN sud*50n025-09p sum45n25 si9110 SI2301ADS SI4732CY
2002 - RESISTOR FOOTPRINT 1206

Abstract: vishay so-8 asynchronous Buck controller 1206 footprint 1247 diode 25V capacitors LM2727 RESISTOR FOOTPRINTS AN1247 MOSFET SO-8
Text: Q3 corresponds to devices with footprints such as the Si4816DY "LITTLEFOOT Plus" from Vishay , 91 8790 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or


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PDF LM2727 16VDC. 800kHz. RESISTOR FOOTPRINT 1206 vishay so-8 asynchronous Buck controller 1206 footprint 1247 diode 25V capacitors RESISTOR FOOTPRINTS AN1247 MOSFET SO-8
2002 - RESISTOR 1206

Abstract: AN-1247 BAT-54 LM2727 P1168 Si4816DY Si4826DY Si4884DY SMA right pcb footprint Connector
Text: -8 packages. Footprint Q3 corresponds to devices with footprints such as the Si4816DY 'LITTLEFOOT Plus' from , 91 8790 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or


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PDF LM2727 16VDC. 800kHz. RESISTOR 1206 AN-1247 BAT-54 P1168 Si4816DY Si4826DY Si4884DY SMA right pcb footprint Connector
samsung nc110

Abstract: smd code wKX samsung nc108 AR5112 TP2322 ELM7S08WS TP2320 smd zG sot 23 TP2323 GND194
Text: No file text available


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PDF wziG2893-3017F ELM7S08WS 100nF MMBD41 PGB001 samsung nc110 smd code wKX samsung nc108 AR5112 TP2322 ELM7S08WS TP2320 smd zG sot 23 TP2323 GND194
SS338A

Abstract: cq521 Diode smd BD27 BD2430 18b2 diode 3b506 BE513 HAINAN2 B538 TP2041
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents C B g n l u a s i t m www.kythuatvitinh.com n a e S fid n o C CPU : Chip Set : Remarks : Intel Merom RS600M & SB600 Mobility Platform Model Name , Crystal Crystal Crystal FREQUENCY 32.768KHz 10MHz 14.318MHz 12MHz 25MHz DEVICE SB600 MICOM CLOCK-Generator


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PDF RS600M SB600 BA41-XXXXXA RS600 REV500 TP2165 TP2123 TP2124 SS338A cq521 Diode smd BD27 BD2430 18b2 diode 3b506 BE513 HAINAN2 B538 TP2041
ICS951461

Abstract: 218s6ecla21fg CQ533 R5538 HAINAN2 mx25l8005m2c-15g SS338A Socket AM2 b536 AF45 DIODE SMD
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN2 C CPU : Chip Set : Remarks : Intel Merom RS600M & SB600 Mobility Platform B Model Name : PBA Name : PCB Code : Dev. Step : Revision , Crystal FREQUENCY 32.768KHz 10MHz 14.318MHz 12MHz 25MHz DEVICE SB600 MICOM CLOCK-Generator AU6366 LAN


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PDF RS600M SB600 BA41-XXXXXA RS600 REV500 TP2123 TP2124 TP2125 ICS951461 218s6ecla21fg CQ533 R5538 HAINAN2 mx25l8005m2c-15g SS338A Socket AM2 b536 AF45 DIODE SMD
BA41-00808A

Abstract: BA41-00807A ICS95461 tp2116 samsung schematic TP2136 HU-1M2012-121JT 2u42 BA41-00809A hainan3
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_INT CPU : Chip Set : Remarks : Intel Merom RS600M & SB600 Mobility Platform C Model Name : PBA Name : PCB Code : Dev. Step : Revision : T.R , 12MHz 25MHz DEVICE SB600 MICOM CLOCK-Generator AU6366 LAN USAGE Real Time Clock HD64F2110B ICS95461 4 IN


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PDF RS600M SB600 BA41-00807A BA41-00808A RS600 TP2656 REV500 TP2660 ICS95461 tp2116 samsung schematic TP2136 HU-1M2012-121JT 2u42 BA41-00809A hainan3
2002 - Not Available

Abstract: No abstract text available
Text: corresponds to devices with footprints such as the Si4816DY "LITTLEFOOT Plus" from Vishay Siliconix


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PDF SNVA057C LM2727 LM2727/ti
2002 - 71917

Abstract: level logic mosfet transistor so-8 siliconix an607 si9110 AN607 offline switchmode PowerPAK SO-8 SI4850EY SI4406DY SUP85N03-04P
Text: voltage keeps rising until the device is carrying the combined load and recovery current (period ¢). , step input is applied to turn the device on, and a step transition, from positive to zero, is applied , voltage (Vth), the channel is turned on, and the current through the device starts to ramp up (period , voltage across the device can begin to decay (the end of point ©) because the diode is now able to , rising until the device is carrying the combined load and recovery current (period ¢). Therefore, the


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PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 siliconix an607 si9110 AN607 offline switchmode PowerPAK SO-8 SI4850EY SI4406DY SUP85N03-04P
schematic diagram TCON lcd samsung

Abstract: T-CON BOARD samsung schematic diagram tcon samsung T-CON Schematic samsung SC451ITS T-CON BOARD samsung pin samsung T-CON Schematic LRX4311 HU-1M2012-121JT AH44 hall
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D MACAO CPU :STEALEY (A110) Chip Set :945GU + ICH7-U Remarks : Ultra Mobile PC WSVGA,HSDPA,DMB Model Name : MACAO PBA Name : BA41-00743A Dev. Step Revision T.R , RSVD A P3.3V CLKREQ DEVICE A B E F SRS PORT SRC2 R707 10K 1/20W R709 R710 GMCH


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PDF 945GU BA41-00743A 47-C1 47-C1 220nF MX25L8005M2C-15G 47-C2 47-C2 schematic diagram TCON lcd samsung T-CON BOARD samsung schematic diagram tcon samsung T-CON Schematic samsung SC451ITS T-CON BOARD samsung pin samsung T-CON Schematic LRX4311 HU-1M2012-121JT AH44 hall
TP2801

Abstract: smd diode PG 303 ALC287 mx25l8005m2c-15g Q5 LED SS338A calistoga bluetooth schematic d47 B-506 52A3
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents SHANGHAI C CPU : Chip Set : Remarks : Intel Merom CALISTOGA & ICH7-M Mobility Platform B Model Name : PBA Name : PCB Code : Dev. Step , FREQUENCY 32.768KHz 10MHz 14.318MHz 12MHz 25MHz DEVICE SB600 MICOM CLOCK-Generator AU6366 LAN USAGE Real


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PDF BA41-00774A/00732A TP2740 TP2741 TP2751 TP2750 TP2749 TP2748 TP2747 TP2746 TP2745 TP2801 smd diode PG 303 ALC287 mx25l8005m2c-15g Q5 LED SS338A calistoga bluetooth schematic d47 B-506 52A3
BA41-00809A

Abstract: BA41-00810A HAINAN3 HAINAN3_EXT BA41 RS600ME 218s6ecla21fg B502 F29 SMD samsung p28 SI2315BDS-T1
Text: e S fid n o C Model Name : PBA Name : PCB Code : Dev. Step : Revision : T.R. Date : HAINAN3_EXT , Crystal Crystal Crystal FREQUENCY 32.768KHz 10MHz 14.318MHz 12MHz 25MHz DEVICE SB600 MICOM CLOCK-Generator


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PDF RS600 SB600 BA41-00809A BA41-00810A TP2123 TP2124 TP2125 TP2062 TP2063 HAINAN3 HAINAN3_EXT BA41 RS600ME 218s6ecla21fg B502 F29 SMD samsung p28 SI2315BDS-T1
d449c

Abstract: 32 inch TV samsung lcd Schematic stm diode C818 B511 N1 CK505M LE88CLPM SI2315BDS-T1 Intel PM965 USB-RJ11 mx25l8005m2c-15g
Text: ICH8-M Remarks : Mobility Platform B Model Name PBA Name PCB Code Dev. Step Revision T.R. Date , 10MHz 14.318MHz 25MHz DEVICE ICH8-M MICOM CLOCK-Generator LAN USAGE Real Time Clock HD64F2169/2160 CK , . CLK REQ DEVICE SRC PORT SRC2 SRC4 SRC6 SRC8 CLK REQ A CLK REQ B CLK REQ E SATA GMCH MINI


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PDF BA41-# RHU002N06 d449c 32 inch TV samsung lcd Schematic stm diode C818 B511 N1 CK505M LE88CLPM SI2315BDS-T1 Intel PM965 USB-RJ11 mx25l8005m2c-15g
schematic diagram hdmi to rca

Abstract: GFX SE DIODE LE88CLPM NH82801HEM RAS 0510 SUN HOLD TP16355 sun hold RAS 0510 f8 vga nb8p SUN HOLD, RAS 0510 BA41-00745A
Text: CHIPSET Mobility Platform B Model Name : PBA Name : PCB Code : Dev. Step : Revision : T.R. Date , 32.768KHz 10MHz 14.318MHz 24.576MHz 25MHz 27MHz (TBD) 24.576MHz (TBD) DEVICE ICH8-M MICOM CLOCK-Generator , REQ CLK REQ A CLK REQ B CLK REQ E CLK REQ F DEVICE SATA GMCH MINI CARD EXPRESS CARD SRC PORT


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PDF BA41-00745A SW501 A3212ELH/HED55XXU12 100nF MT504 TP17294 TP17297 schematic diagram hdmi to rca GFX SE DIODE LE88CLPM NH82801HEM RAS 0510 SUN HOLD TP16355 sun hold RAS 0510 f8 vga nb8p SUN HOLD, RAS 0510
32 inch TV samsung lcd Schematic

Abstract: U538 BA41-00786A LE88CLPM Marvell 88E8038 U52-5 ATI-M72S BA41-00753A smd ra6 Marvell 88E8055
Text: ICH8-M Remarks : Mobility Platform Model Name PBA Name PCB Code PCB Code Dev. Step Revision T.R. Date , 12.0MHz 25MHz DEVICE ICH8-M MICOM CLOCK-Generator Memory Card Controller LAN USAGE Real Time Clock , -A4 R159 0 This part is 64pin QFN package. CLK REQ DEVICE SATA GMCH MINI CARD LOM SRC PORT


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PDF BA41-00753A BA41-00786A 32 inch TV samsung lcd Schematic U538 LE88CLPM Marvell 88E8038 U52-5 ATI-M72S smd ra6 Marvell 88E8055
BA41-00727A

Abstract: U252 SMM 112 samsung 20D2G 11070 SI2315BDS-T1 LE88CLGM samsung u252 Socket AM2 HED55XXU12
Text: Set :INTEL 965GM & ICH8-M Remarks :w/o INTEL AMT 2 SODIMMs Model Name PBA Name PCB Code Dev. Step , Crystal Crystal Crystal Crystal FREQUENCY 32.768KHz 10MHz 14.318MHz 24.576MHz 25MHz DEVICE ICH8-M MICOM , 1K P3.3V P3.3V EXT_GFX R711 10K CLK REQ A# Mapping SRC_2 SRC_4 SRC_6 Device


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PDF 965GM BA41-00727A BA41-? BA41-00727/8A COM-22C-015 U252 SMM 112 samsung 20D2G 11070 SI2315BDS-T1 LE88CLGM samsung u252 Socket AM2 HED55XXU12
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