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Fairchild Semiconductor Corporation
SI4466DY Small Signal Field-Effect Transistor, 15A, 20V, 1-Element, N-Channel, MOSFET SI4466DY ECAD Model
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Rochester Electronics SI4466DY 417 1 $0.44 $0.44 $0.39 $0.36 $0.36 Buy Now
SILI
SI4466DY SI4466DY ECAD Model
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Bristol Electronics SI4466DY 45 - - - - - Get Quote
Vishay Siliconix
SI4466DY SI4466DY ECAD Model
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Bristol Electronics SI4466DY 969 - - - - - Get Quote
Vishay Intertechnologies
SI4466DY-TI-E3 SI4466DY-TI-E3 ECAD Model
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Bristol Electronics SI4466DY-TI-E3 6,683 - - - - - Get Quote
Vishay Siliconix
SI4466DY-T1 SI4466DY-T1 ECAD Model
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Bristol Electronics SI4466DY-T1 4,516 7 - $0.825 $0.3094 $0.231 $0.2145 Buy Now
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Vishay Siliconix
SI4466DYT1 SI4466DYT1 ECAD Model
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Bristol Electronics SI4466DYT1 2,767 - - - - - Get Quote
Vishay Intertechnologies
SI4466DY-T1-E3 SI4466DY-T1-E3 ECAD Model
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Bristol Electronics (2) SI4466DY-T1-E3 2,032 - - - - - Get Quote
SI4466DY-T1-E3 5,000 - - - - - Get Quote
Vishay Siliconix
SI4466DY-T1-E3 SI4466DY-T1-E3 ECAD Model
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Bristol Electronics SI4466DY-T1-E3 2,485 7 - $0.825 $0.3094 $0.231 $0.2145 Buy Now
Vishay Intertechnologies
SI4466DY SI4466DY ECAD Model
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element14 Asia-Pacific SI4466DY Cut Tape 0 1 $2.84 $2.34 $1.83 $1.29 $1.22 Buy Now

Si4466DY datasheet (8)

Part ECAD Model Manufacturer Description Type PDF
SI4466DY SI4466DY ECAD Model Fairchild Semiconductor Single N-Channel 2.5V Specified PowerTrench MOSFET Original PDF
Si4466DY Si4466DY ECAD Model Toshiba Power MOSFETs Cross Reference Guide Original PDF
Si4466DY Si4466DY ECAD Model Vishay N-Channel 2.5-V (D-S) MOSFET Original PDF
SI4466DY_NL SI4466DY_NL ECAD Model Fairchild Semiconductor Single N-Channel 2.5V Specified PowerTrench MOSFET Original PDF
Si4466DY SPICE Device Model Si4466DY SPICE Device Model ECAD Model Vishay N-Channel 2.5-V (G-S) MOSFET Original PDF
SI4466DY-T1 SI4466DY-T1 ECAD Model Vishay Intertechnology N-Channel 2.5-V (G-S) Rated MOSFET Original PDF
SI4466DY-T1-E3 SI4466DY-T1-E3 ECAD Model Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 9.5A 8-SOIC Original PDF
SI4466DY-T1-GE3 SI4466DY-T1-GE3 ECAD Model Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 9.5A 8-SOIC Original PDF

Si4466DY Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - MOSFET 4466

Abstract: FDS6570A Si4466DY 4466 SO-8
Text: Si4466DY Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features , Reel Size Tape Width Quantity Si4466DY 13'' 12mm 2500 units Si4466DY Rev. A Si4466DY FDS6570A January 2001 Symbol TA = 25°C unless otherwise noted Parameter Test , Test: Pulse Width 300 µs, Duty Cycle 2.0% Si4466DY Rev. A FDS6570A Si4466DY Electrical Characteristics FDS6570A Si4466DY Typical Characteristics 50 2.5 RDS(ON) , NORMALIZED DRAIN-SOURCE


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PDF Si4466DY MOSFET 4466 FDS6570A 4466 SO-8
Si4466DY

Abstract: 70910
Text: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , -60074Rev. B, 23-Jan-06 www.vishay.com 1 SPICE Device Model Si4466DY Vishay Siliconix SPECIFICATIONS , Si4466DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED


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PDF Si4466DY S-60074Rev. 23-Jan-06 70910
Si4466DY

Abstract: No abstract text available
Text: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , -Apr-01 www.vishay.com 1 SPICE Device Model Si4466DY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , -Apr-01 SPICE Device Model Si4466DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS


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PDF Si4466DY 17-Apr-01
2001 - 4466 8 pin mosfet pin voltage

Abstract: MOSFET 4466
Text: Si4466DY FDS6570A January 2001 Si4466DY Single N-Channel 2.5V Specified PowerTrench MOSFET , and Ordering Information Device Marking 4466 Device Si4466DY Reel Size 13'' Tape Width 12mm Quantity 2500 units 200 1 Fairchild Semiconductor International Si4466DY Rev. A FDS6570A Si4466DY Electrical Characteristics Symbol BVDSS BVDSS T J IDSS IGSSF IGSSR TA = 25 , : Pulse Width 300 µs, Duty Cycle 2.0% Si4466DY Rev. A FDS6570A Si4466DY Typical


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PDF Si4466DY FDS6570A 4466 8 pin mosfet pin voltage MOSFET 4466
1997 - Si4466DY

Abstract: No abstract text available
Text: Si4466DY N-Channel 2.5-V (G-S) Rated MOSFET Product Summary VDS (V) rDS(on) (W) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V 20 ID (A) "11 D SO-8 S 1 8 D S 2 , document #70716. Siliconix S-54695-Rev. A, 15-Sep-97 3-1 New Product Si4466DY , , duty cycle v 2%. 3-2 New Product Siliconix S-54695-Rev. A, 15-Sep-97 Si4466DY Typical , New Product Si4466DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode


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PDF Si4466DY S-54695--Rev. 15-Sep-97
1999 - Si4466DY

Abstract: No abstract text available
Text: Si4466DY Vishay Siliconix N-Channel 2.5-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V 20 ID (A) "11 D SO-8 S 1 , -54695-Rev. A, 15-Sep-97 Siliconix was formerly a division of TEMIC Semiconductors 3-1 Si4466DY Vishay , Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Output Characteristics , TEMIC Semiconductors 3-3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS


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PDF Si4466DY S-54695--Rev. 15-Sep-97
2009 - Si4466DY

Abstract: No abstract text available
Text: Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V 20 ID (A) "11 D SO-8 S 1 8 D , : 70716 S-00652-Rev. B, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 2-1 Si4466DY Vishay , Number: 70716 S-00652-Rev. B, 27-Mar-00 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 , ) www.vishay.com S FaxBack 408-970-5600 2-3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS


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PDF Si4466DY 18-Jul-08
playstation 2 power supply

Abstract: playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer playstation power supply
Text: (MiniMOS) · SI4466DY · SI9925DY · SI4466DY · BSP030 · PHN103T · BSH108 · BSP100 · SI4420DY · , SI4466DY · SI9925DY · SI4466DY · BSP030 · PHN103T · BSH108 · BSP100 · SI4420DY · SI4410DY · , control Semiconductors · SI4466DY · SI9925DY · SI4466DY · BSP030 · PHN103T · BSH108 · BSP100


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PDF OT223 BSH105 BSH103 PHP225 PHC21025 playstation 2 power supply playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer playstation power supply
2000 - SI4466DY

Abstract: No abstract text available
Text: Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V 20 ID (A) "11 D SO-8 S 1 8 D , : 70716 S-00652-Rev. B, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 2-1 Si4466DY Vishay , Number: 70716 S-00652-Rev. B, 27-Mar-00 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 , ) www.vishay.com S FaxBack 408-970-5600 2-3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS


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PDF Si4466DY S-00652--Rev. 27-Mar-00
2009 - Si4466DY

Abstract: Si4466DY-T1-E3 135-A70
Text: Top View S Ordering Information: Si4466DY-T1-E3 (Lead (Pb)-free) Si4466DY-T1-GE3 (Lead (Pb , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , . Document Number: 71820 S09-0767-Rev. F, 04-May-09 www.vishay.com 1 Si4466DY Vishay Siliconix , S09-0767-Rev. F, 04-May-09 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , , 04-May-09 www.vishay.com 3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless


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PDF Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 18-Jul-08 135-A70
2003 - SI4466DY

Abstract: No abstract text available
Text: View Ordering Information: Si4466DY Si4466DY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on , _C/W 1 Si4466DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED , -31062-Rev. D, 26-May-03 2 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED , Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 200


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PDF Si4466DY Si4466DY-T1 S-31062--Rev. 26-May-03
2003 - Si4466DY

Abstract: 135-A70
Text: Si4466DY New Product Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.009 @ VGS = 4.5 V 13.5 0.013 @ VGS = 2.5 V 20 ID (A) 11 D SO-8 S , : 71820 S-20218-Rev. C, 01-Apr-02 www.vishay.com 1 Si4466DY New Product Vishay Siliconix , ) Document Number: 71820 S-20218-Rev. C, 01-Apr-02 Si4466DY New Product Vishay Siliconix TYPICAL , Gate-to-Source Voltage (V) www.vishay.com 3 Si4466DY New Product Vishay Siliconix TYPICAL


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PDF Si4466DY S-20218--Rev. 01-Apr-02 135-A70
Si4466DY

Abstract: Siliconix The subcircuit model was extracted and optimized
Text: SPICE Device Model Si4466DY N-Channel 2.5-V (G-S) Rated MOSFET Characteristics · N-channel Vertical DMOS · Macro-Model (Subcircuit) · Level 3 MOS · Applicable for Both Linear and Switchmode · Applicable Over a -55 to 125°C Temperature Range · Models Gate Charge, Transient, and Diode Reverse , request FaxBack document #. Siliconix 4/17/01 Document: 70910 1 SPICE Device Model Si4466DY , presented in the model circuit Siliconix 4/17/01 Document: 70910 2 SPICE Device Model Si4466DY


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PDF Si4466DY Siliconix The subcircuit model was extracted and optimized
2005 - SI4466DY

Abstract: No abstract text available
Text: Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.009 @ VGS = 4.5 V 0.013 @ VGS = 2.5 V ID (A) "13.2 "11 D SO-8 S S S G 1 2 3 4 Top , 50 Unit _C/W 2-1 Si4466DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE , FaxBack 408-970-5600 2-2 Document Number: 70716 S-00652-Rev. B, 27-Mar-00 Si4466DY Vishay , -Mar-00 www.vishay.com S FaxBack 408-970-5600 2-3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS


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PDF Si4466DY 08-Apr-05
CK408

Abstract: CK-408
Text: M IC S em icond uctors www .siliconix.com 3-27 Si4466DY_ Vishay , _ 4466DY Vishay Siliconix N-Channel 2.5-V (D-S) MOSFET V d*{ V ) 0.009 @ V g s = 4 .5 V 20 0.013 @ V G S r 2 . 5 V h» (A) ± 13.2 ±11 A SO S i o - it *t , iiiconix w a s form erly a division of T E M IC Sem iconductors www .siiiconix.com 3-25 4466DY , .sillconlx.com 3-26 4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25°C UNLESS OTHERWISE NOTED) O


OCR Scan
PDF 4466DY 15-Sep-97 Si4466DY S-54695-- CK408 CK-408
Si4466DY

Abstract: No abstract text available
Text: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , -60074Rev. B, 23-Jan-06 www.vishay.com 1 SPICE Device Model Si4466DY Vishay Siliconix SPECIFICATIONS , Si4466DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED


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PDF Si4466DY 18-Jul-08
332AL

Abstract: No abstract text available
Text: Tem ic S e m i c o n d u c t o r s 4466DY N-Channel 2.5-V (G-S) Rated MOSFET Product Summary V D S (V ) 20 0.013 @ V GS = 2.5 V ± 11 r DS(on) ( S ) 0.009 @ Vo s = 4.5 V I d (A ) ± 1 3 .2 , Unit °c/w Siliconix S-54695- Rev. A, 15-Sep-97 3 -2 9 New Product 4466DY , Product Siliconix S-54695-Rev. A, 15-Sep-97 Temic S e m i c o n d u c t o r s 4466DY , -8 4466DY Typical Characteristics (25 °C Unless Otherwise Noted) Tem ic S e m i c o n d u c t o r s


OCR Scan
PDF 4466DY S-54695--Rev. 15-Sep-97 332AL
2005 - SI4466DY

Abstract: No abstract text available
Text: View Ordering Information: Si4466DY Si4466DY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on , _C/W 1 Si4466DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED , -31062-Rev. D, 26-May-03 2 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED , Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 200


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PDF Si4466DY Si4466DY-T1 08-Apr-05
2008 - SI4466DY

Abstract: A302V
Text: : Si4466DY-T1 Si4466DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS TA , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on , Unit Si4466DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , -Jun-06 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 0.020 25 °C unless noted 4000 r DS(on) - , . Gate-to-Source Voltage Document Number: 71820 S-61005-Rev. E, 12-Jun-06 www.vishay.com 3 Si4466DY


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PDF Si4466DY Si4466DY-T1 Si4466DY-T1-E3 18-Jul-08 A302V
Si4466DY

Abstract: No abstract text available
Text: Si4466DY N-Channel 2.5-V (G-S) Rated MOSFET Product Summary VDS (V) rDS(on) (W) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V 20 ID (A) "11 D SO-8 S 1 8 D S 2 , document #70716. Siliconix S-54695-Rev. A, 15-Sep-97 3-1 New Product Si4466DY , , duty cycle v 2%. 3-2 New Product Siliconix S-54695-Rev. A, 15-Sep-97 Si4466DY Typical , ) 3-3 New Product Si4466DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain


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PDF Si4466DY S-54695--Rev. 15-Sep-97
Si4466DY-T1-E3

Abstract: Si4466DY 135-A70
Text: Top View S Ordering Information: Si4466DY-T1-E3 (Lead (Pb)-free) Si4466DY-T1-GE3 (Lead (Pb , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , . Document Number: 71820 S09-0767-Rev. F, 04-May-09 www.vishay.com 1 Si4466DY Vishay Siliconix , S09-0767-Rev. F, 04-May-09 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , , 04-May-09 www.vishay.com 3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless


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PDF Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 11-Mar-11 135-A70
2006 - SI4466DY-T1-E3

Abstract: Si4466DY-T1 Si4466DY
Text: D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4466DY-T1 Si4466DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -61005-Rev. E, 12-Jun-06 www.vishay.com 1 Si4466DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless , Voltage (V) Transfer Characteristics Document Number: 71820 S-61005-Rev. E, 12-Jun-06 Si4466DY


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PDF Si4466DY Si4466DY-T1 Si4466DY-T1-E3 08-Apr-05
2011 - Not Available

Abstract: No abstract text available
Text: G 1 2 3 4 Top View Ordering Information: Si4466DY-T1-E3 (Lead (Pb)-free) Si4466DY-T1-GE3 (Lead (Pb , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on , -May-09 www.vishay.com 1 Si4466DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted , -May-09 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 0.020 25 °C, unless otherwise noted 4000 R DS , . Gate-to-Source Voltage Document Number: 71820 S09-0767-Rev. F, 04-May-09 www.vishay.com 3 Si4466DY


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PDF Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 11-Mar-11
2012 - Not Available

Abstract: No abstract text available
Text: G 1 2 3 4 Top View Ordering Information: Si4466DY-T1-E3 (Lead (Pb)-free) Si4466DY-T1-GE3 (Lead (Pb , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on , -May-09 www.vishay.com 1 Si4466DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted , -May-09 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 0.020 25 °C, unless otherwise noted 4000 R DS , . Gate-to-Source Voltage Document Number: 71820 S09-0767-Rev. F, 04-May-09 www.vishay.com 3 Si4466DY


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PDF Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Not Available

Abstract: No abstract text available
Text: D G Top View S Ordering Information: Si4466DY-T1-E3 (Lead (Pb)-free) Si4466DY-T1-GE3 , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , ‰¤ 10 s. Document Number: 71820 S09-0767-Rev. F, 04-May-09 www.vishay.com 1 Si4466DY Vishay , Voltage (V) Transfer Characteristics Document Number: 71820 S09-0767-Rev. F, 04-May-09 Si4466DY , 3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 200


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PDF Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
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