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Si4442DY SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si4442DY SPICE Device Model Si4442DY SPICE Device Model ECAD Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

Si4442DY SPICE Device Model Datasheets Context Search

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SI4442

Abstract: Si4442DY
Text: SPICE Device Model Si4442DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET CHARACTERISTICS · , -51095Rev. B, 13-Jun-05 www.vishay.com 1 SPICE Device Model Si4442DY Vishay Siliconix SPECIFICATIONS , Number: 71645 S-51095Rev. B, 13-Jun-05 SPICE Device Model Si4442DY Vishay Siliconix COMPARISON OF , the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline , , Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes


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PDF Si4442DY 18-Jul-08 SI4442
2007 - A2219

Abstract: No abstract text available
Text: Si4442DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on , . Document Number: 71358 S-71598-Rev. D, 30-Jul-07 www.vishay.com 1 Si4442DY Vishay Siliconix , "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational , periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 VGS =


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PDF Si4442DY Si4442DY-T1 Si4442DY-T1-E3 08-Apr-05 A2219
Si4442DY

Abstract: Si4442DY-T1-E3
Text: Si4442DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , board. Document Number: 71358 S09-0228-Rev. E, 09-Feb-09 www.vishay.com 1 Si4442DY Vishay , . Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions , absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL


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PDF Si4442DY Si4442DY-T1-E3 Si4442DY-T1-GE3 11-Mar-11
2012 - SI4442DY-T1

Abstract: SI4442DY-T1-E3
Text: Si4442DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on , : 71358 S09-0228-Rev. E, 09-Feb-09 www.vishay.com 1 Si4442DY Vishay Siliconix SPECIFICATIONS TJ = , "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational , periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 VGS =


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PDF Si4442DY Si4442DY-T1-E3 Si4442DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4442DY-T1
2005 - Si4442DY

Abstract: No abstract text available
Text: Si4442DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on , G 1 2 3 4 Top View 8 7 6 5 D D D D G D Ordering Information: Si4442DY Si4442DY-T1 (with Tape , 16 Unit _C/W 1 Si4442DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE , : 71358 S-40843-Rev. C, 03-May-04 2 Si4442DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 , -May-04 www.vishay.com 3 Si4442DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold


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PDF Si4442DY Si4442DY-T1 Si4442DY--E3 Si4442DY-T1--E3 08-Apr-05
2009 - Si4442DY

Abstract: Si4442DY-T1-E3
Text: Si4442DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , board. Document Number: 71358 S09-0228-Rev. E, 09-Feb-09 www.vishay.com 1 Si4442DY Vishay , . Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions , absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL


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PDF Si4442DY Si4442DY-T1-E3 Si4442DY-T1-GE3 18-Jul-08
Not Available

Abstract: No abstract text available
Text: Si4442DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , Si4442DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections , periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60


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PDF Si4442DY Si4442DY-T1-E3 Si4442DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2008 - Not Available

Abstract: No abstract text available
Text: Si4442DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on , . Document Number: 71358 S-71598-Rev. D, 30-Jul-07 www.vishay.com 1 Si4442DY Vishay Siliconix , "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational , periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 VGS =


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PDF Si4442DY Si4442DY-T1 Si4442DY-T1-E3 18-Jul-08
2002 - TDK MLCC 1206 100uF

Abstract: LM27x7 LM2727 LM2737 MTC14 Si4826DY SLF12575T-1R2N8R2 36E-9 300KHZ
Text: making the device ideal for highly efficient 3.3V conversion. The regulator is biased from a 4.5V-5.5V , indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Opearting Ratings do not imply guaranteed performance limits. Note 2: The human body model is a 100pF capacitor discharged through a 1.5k resistor into each pin , , in which case CSS would be 12nF. For a different device , a 100ms delay might be more appropriate, in


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PDF LM2727/LM2737 LM2727 LM2727/37 50KHz TDK MLCC 1206 100uF LM27x7 LM2737 MTC14 Si4826DY SLF12575T-1R2N8R2 36E-9 300KHZ
MOSFET 12W

Abstract: mosfet 10V 10A PWM circuit 12v 10a MOSFET FOR 100khz 12v 10A mosfet LM2742 Si4826DY mosfet 12V 4A PWM 1.5V PWM circuit 10a
Text: Si4442DY RDSON 4.1m PCND 0.533W 5V 2.5V (D 0.5) MOSFET D 0.24 76 , n * VCC * QGS * fOSC n MOSFET Vishay Si4442DY QGS 36nC rds-on 4.1m MOSFET MOSFET , www.national.com/jpn/ Si4442DY tr tf 11ns47ns 0.5 × 5 × 10 × 58E-9 × 300,000 0.435W 14 LM2742


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PDF LM2742 50kHz TSSOP-14 DS200875-02-JP MOSFET 12W mosfet 10V 10A PWM circuit 12v 10a MOSFET FOR 100khz 12v 10A mosfet LM2742 Si4826DY mosfet 12V 4A PWM 1.5V PWM circuit 10a
2007 - 1812D107MAT

Abstract: LM274X ZD105 Cer cap 100uf MBR0520LTI capacitor huang 100uf LM2742 VJ0603Y333KXX vj0603y102kxx IRF9910
Text: N-MOSFET, 7.5m@2.5V, 36nC Vishay Si4442DY Q2 Bottom MOSFET Single N-MOSFET, 7.5m@2.5V, 36nC Vishay Si4442DY Q3 Bottom MOSFET Single N-MOSFET, 7.5m@2.5V, 36nC Vishay Si4442DY , application example also values high output voltage tolerance, thus the LM2747 device is chosen. LM2747 , Single Bottom MOSFET 7.5m@2.5V, 36nC Vishay Si4442DY Efficiency VIN = 3.0V, VOUT = 3.3V, fSW = , support device or system whose failure to perform can be reasonably expected to cause the failure of the


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PDF LM274X AN-1603 1812D107MAT ZD105 Cer cap 100uf MBR0520LTI capacitor huang 100uf LM2742 VJ0603Y333KXX vj0603y102kxx IRF9910
Capacitor 47nS

Abstract: QGS controlLER DC 12v TDK MLCC 1206 MOSFET 12W 5V-350mA RESISTOR 1206 TDK 1206 MLCC 12w sot 23 SLF12575T-1R2N8R2 bat 54
Text: Si4442DY RDSON 0.533W 4.1m PCND 5V 2.5V (D 0.5) MOSFET D 0.24 76 , ° 29.3kHz PSW 0.5 * Vin * IO * (tr tf)* fOSC Si4442DY tr tf 11ns 47ns 0.5 × 5 × 10 × 58E - 9 , 3 ID Part Number U1 LM2727 Synchronous Controller TSSOP-14 Q1 Si4442DY N-MOSFET SO-8 30V, 4.1m, @ 4.5V, 36nC 1 Vishay Q2 Si4442DY N-MOSFET SO-8 30V


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PDF LM2727LM2737 LM2727 LM2737 50kHz LM2737) TSSOP-14 Capacitor 47nS QGS controlLER DC 12v TDK MLCC 1206 MOSFET 12W 5V-350mA RESISTOR 1206 TDK 1206 MLCC 12w sot 23 SLF12575T-1R2N8R2 bat 54
2003 - 7.3*4.3*2.8mm

Abstract: VJ1206A102k VJ1206A102 71x7 10MV5600AX RLF7030T-4R7 TDK MLCC 1206 100uF SLF12575T-1R2N8R2 LM27x7 MTC14
Text: the device may occur. Operating ratings indicate conditions for which the device operates correctly. Opearting Ratings do not imply guaranteed performance limits. Note 2: The human body model is a 100pF , device , a 100ms delay might be more appropriate, in which case CSS would be 400nF. (390 10%) During soft , voltage between the top FET gate and source to control the device even when the top FET is on and its , case IIN-DC is about 2.8A. One possible choice is the TDK SLF12575T-1R2N8R2, a 1.2µH device that can


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PDF LM2727/LM2737 LM2727 LM2737 7.3*4.3*2.8mm VJ1206A102k VJ1206A102 71x7 10MV5600AX RLF7030T-4R7 TDK MLCC 1206 100uF SLF12575T-1R2N8R2 LM27x7 MTC14
2007 - 1W 12V ZENER DIODE 1206

Abstract: Capacitor 47nS 22uH LM2727 LM2742MTCX LM2742MTC LM2742 LM2737 10MV5600AX 16MV470
Text: device which turns on the low side switch during shutdown, see the pin compatible LM2737. HG (Pin 14 , indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Operating Ratings do not imply guaranteed performance limits. Note 2: The human body model is a 100pF capacitor discharged through a 1.5k resistor into each pin , the device even when the top FET is on and its source has risen up to the input voltage level. The


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PDF LM2742 LM2742 50kHz 1W 12V ZENER DIODE 1206 Capacitor 47nS 22uH LM2727 LM2742MTCX LM2742MTC LM2737 10MV5600AX 16MV470
2003 - Not Available

Abstract: No abstract text available
Text: indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Opearting Ratings do not imply guaranteed performance limits. Note 2: The human body model is a 100pF capacitor discharged through a 1.5k resistor into each pin , case CSS would be 12nF. For a different device , a 100ms delay might be more appropriate, in which case , gate and source to control the device even when the top FET is on and its source has risen up to the


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PDF LM2727 LM2737 LM2727/LM2737 SNVS205C LM2737
2004 - 10MV5600AX

Abstract: D05022-152HC LM2737 LM2742 MTC14 Si4826DY SLF12575T-1R2N8R2
Text: connects this pin to VCC. For a device which turns on the low side switch during shutdown, see the pin , maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Opearting Ratings do not imply guaranteed performance limits. Note 2: The human body model is a 100pF capacitor discharged through a 1.5k resistor into each , need a delay of 3ms, in which case CSS would be 12nF. For a different device , a 100ms delay might be


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PDF LM2742 LM2742 50kHz 10MV5600AX D05022-152HC LM2737 MTC14 Si4826DY SLF12575T-1R2N8R2
2005 - 1W 12V ZENER DIODE 1206

Abstract: 12w sot-23 vishay 1206 sot-23 12w MOSFET FOR 100khz SWITCHING APPLICATIONS LM2742 mos n-channel SOT-23 D05022-152HC Capacitor MLCC 1210 10uF 25V C3216X5R10J06M
Text: connects this pin to VCC. For a device which turns on the low side switch during shutdown, see the pin , maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Operating Ratings do not imply guaranteed performance limits. Note 2: The human body model is a 100pF capacitor discharged through a 1.5k resistor into each , need a delay of 3ms, in which case CSS would be 12nF. For a different device , a 100ms delay might be


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PDF LM2742 LM2742 50kHz CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. 1W 12V ZENER DIODE 1206 12w sot-23 vishay 1206 sot-23 12w MOSFET FOR 100khz SWITCHING APPLICATIONS mos n-channel SOT-23 D05022-152HC Capacitor MLCC 1210 10uF 25V C3216X5R10J06M
2007 - 5V-350mA

Abstract: TDK MLCC 1206 100uF C3216X5R10J06M 16MV470
Text: not start up. An internal 20µA pull-up connects this pin to VCC. For a device which turns on the low , Hysteresis mV Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Operating Ratings do not imply guaranteed performance limits. Note 2: The human body model is a 100pF capacitor , serves to maintain enough voltage between the top FET gate and source to control the device even when the


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PDF LM2742 LM2742 SNVS266B 5V-350mA TDK MLCC 1206 100uF C3216X5R10J06M 16MV470
2007 - 10MV5600AX

Abstract: LM2737 LM2742 LM2742MTC LM2742MTCX MTC14 Si4826DY
Text: device which turns on the low side switch during shutdown, see the pin compatible LM2737. HG (Pin 14 , ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Operating Ratings do not imply guaranteed performance limits. Note 2: The human body model is a 100pF capacitor discharged through a 1.5k resistor into each pin , the device even when the top FET is on and its source has risen up to the input voltage level. The


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PDF LM2742 LM2742 50kHz 10MV5600AX LM2737 LM2742MTC LM2742MTCX MTC14 Si4826DY
2004 - LM27x7

Abstract: No abstract text available
Text: . These devices have limited built-in ESD protection. The leads should be shorted together or the device , kV Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Opearting Ratings do not imply , delay of 3ms, in which case CSS would be 12nF. For a different device , a 100ms delay might be more , control the device even when the top FET is on and its source has risen up to the input voltage level. The


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PDF LM2727, LM2737 SNVS205C LM2727/LM2737 LM2727) LM2737) TSSOP-14 LM27x7
2002 - Not Available

Abstract: No abstract text available
Text: built-in ESD protection. The leads should be shorted together or the device placed in conductive foam , limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Opearting Ratings do not imply ensured performance limits. If Military , for availability and specifications. The human body model is a 100pF capacitor discharged through a , might need a delay of 3ms, in which case CSS would be 12nF. For a different device , a 100ms delay might


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PDF LM2727, LM2737 SNVS205D LM2727/LM2737 LM2727 LM2737 LM2727
2002 - sanyo capacitor 680uf 25v

Abstract: No abstract text available
Text: built-in ESD protection. The leads should be shorted together or the device placed in conductive foam , limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Opearting Ratings do not imply ensured performance limits. If Military , for availability and specifications. The human body model is a 100pF capacitor discharged through a , might need a delay of 3ms, in which case CSS would be 12nF. For a different device , a 100ms delay might


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PDF LM2727, LM2737 SNVS205D LM2727/LM2737 LM2727 LM2737 LM2727 sanyo capacitor 680uf 25v
2005 - Not Available

Abstract: No abstract text available
Text: have limited built-in ESD protection. The leads should be shorted together or the device placed in , , 219°C Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is specified. For specified performance , human body model , which is a 100pF capacitor discharged through a 1.5 k resistor into each pin , Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating Ratings are


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PDF LM2657 SNVS342B LM2657 200kHz500kHz 28-Pin 200kHz-500kHz
2002 - SS MARKING sot23

Abstract: No abstract text available
Text: . These devices have limited built-in ESD protection. The leads should be shorted together or the device , damage to the device may occur. Operating ratings indicate conditions for which the device operates , specifications. The human body model is a 100pF capacitor discharged through a 1.5k resistor into each pin , be 12nF. For a different device , a 100ms delay might be more appropriate, in which case CSS would be , capacitor serves to maintain enough voltage between the top FET gate and source to control the device even


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PDF LM2727, LM2737 SNVS205D LM2727/LM2737 LM2727) LM2737) TSSOP-14 LM2727 SS MARKING sot23
2005 - hr r 221k 2kv

Abstract: No abstract text available
Text: device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS , device may occur. Operating Ratings are conditions under which operation of the device is guaranteed. For , model , which is a 100pF capacitor discharged through a 1.5 k resistor into each pin. (1) Operating , maximum ratings indicate limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is guaranteed. For guaranteed performance limits and


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PDF LM2657 SNVS342A LM2657 200kHz500kHz TSSOP-28 hr r 221k 2kv
Supplyframe Tracking Pixel