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Si4416DY SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si4416DY SPICE Device Model Si4416DY SPICE Device Model ECAD Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

Si4416DY SPICE Device Model Datasheets Context Search

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Si4416DY

Abstract: No abstract text available
Text: SPICE Device Model Si4416DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET CHARACTERISTICS · , -60147Rev. B, 13-Feb-06 www.vishay.com 1 SPICE Device Model Si4416DY Vishay Siliconix SPECIFICATIONS , . www.vishay.com 2 Document Number: 70985 S-60147Rev. B, 13-Feb-06 SPICE Device Model Si4416DY Vishay , the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline , , Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes


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PDF Si4416DY 18-Jul-08
2005 - Not Available

Abstract: No abstract text available
Text: on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com , Si4416DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on , 408-970-5600 Symbol RthJA Limit 50 Unit _C/W 2-1 Si4416DY Vishay Siliconix , Number: 70752 S-56945-Rev. C, 23-Nov-98 Si4416DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 , S-56945-Rev. C, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-3 Si4416DY Vishay


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PDF Si4416DY 08-Apr-05
2009 - Si4416DY

Abstract: No abstract text available
Text: Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product , Si4416DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W , 2-1 Si4416DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter , -Nov-98 Si4416DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer , Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-3 Si4416DY Vishay Siliconix


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PDF Si4416DY 18-Jul-08
1999 - Power MOSFET, Fairchild

Abstract: Fairchild MOSFET Si4416DY
Text: Si4416DY * Single N-Channel MOSFET General Description Features This N-Channel Logic Level , . Low gate charge. This device is well suited for low voltage and battery powered applications where , Si4416DY Rev. A Si4416DY August 1999 6\PERO $ U Ã2Ã!$8ÃyrÃurvrÃrq 3DUDPHWHU 7HVW , % Si4416DY Rev. A Si4416DY (OHFWULFDO &KDUDFWHULVWLFV TRADEMARKS The following are registered and , life support device or system whose failure to perform can systems which, (a) are intended for


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PDF Si4416DY Power MOSFET, Fairchild Fairchild MOSFET
2001 - Si4416DY

Abstract: SOT96- 1
Text: Si4416DY N-channel enhancement mode field-effect transistor Rev. 01 - 05 June 2001 M3D315 , using TrenchMOSTM1 technology. Product availability: Si4416DY in SOT96-1 (SO8). 2. Features s Low , Electronics. d g Top view 1. Symbol MBB076 s Si4416DY Philips Semiconductors , 750 08299 Product data Rev. 01 - 05 June 2001 2 of 13 Si4416DY Philips Semiconductors , of 13 Si4416DY Philips Semiconductors N-channel enhancement mode field-effect transistor


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PDF Si4416DY M3D315 OT96-1 OT96-1, SOT96- 1
Si4416DY

Abstract: fairchild NDS 9959 nds 40
Text: Si4416DY Single N-Channel MOSFET General Description Features This N-Channel Logic Level , . Low gate charge. This device is well suited for low voltage and battery powered applications where , Si4416DY Rev. A Si4416DY August 1999 DISTRIBUTION GROUP* 6\PERO $ U Ã2Ã , % Si4416DY Rev. A Si4416DY (OHFWULFDO &KDUDFWHULVWLFV SO-8 Tape and Reel Data and Package , devices or 2. A critical component is any component of a life support device or system whose failure to


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PDF Si4416DY fairchild NDS 9959 nds 40
1999 - Not Available

Abstract: No abstract text available
Text: Si4416DY August 1999 Si4416DY * Single N-Channel MOSFET General Description This N-Channel , performance. This device is well suited for low voltage and battery powered applications where low in-line , Corporation Si4416DY Rev. A Si4416DY (OHFWULFDO &KDUDFWHULVWLFV 6\PERO 2II &KDUDFWHULVWLFV 7W9TT , . Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% Si4416DY Rev. A , or systems are devices or 2. A critical component is any component of a life support device or system


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PDF Si4416DY
1999 - Not Available

Abstract: No abstract text available
Text: Si4416DY Single N-Channel MOSFET General Description Features This N-Channel Logic Level , • • Low gate charge. This device is well suited for low voltage and battery powered , ƒ ‚ ©1999 Fairchild Semiconductor Corporation Si4416DY Rev. A Si4416DY August 1999 , 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Si4416DY Rev. A Si4416DY , component of a life support device or system whose failure to perform can systems which, (a) are intended


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PDF Si4416DY
2008 - Si4416DY

Abstract: Si4416DY-T1
Text: Si4416DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) D , Top View S Ordering Information: Si4416DY Si4416DY-T1 (with Tape and Reel) N-Channel MOSFET , -31062-Rev. E, 26-May-03 www.vishay.com 1 Si4416DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25 , -May-03 Si4416DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current , Si4416DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse


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PDF Si4416DY Si4416DY-T1 18-Jul-08
2005 - Not Available

Abstract: No abstract text available
Text: Si4416DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 , D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4416DY Si4416DY-T1 (with Tape and Reel , Steady-State RthJA RthJF Symbol Typ 40 72 16 Max 50 90 20 Unit _C/W 1 Si4416DY Vishay , -31062-Rev. E, 26-May-03 www.vishay.com 2 Si4416DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 , Si4416DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50


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PDF Si4416DY Si4416DY-T1 08-Apr-05
SI4800

Abstract: GRM42-6 X7R 106k LX322 vitramon Si786DB Si786 1N4148 SOT-23 Si4416DY gds04 augat VJ0805Y103KXAAT
Text: mF D2A CMPD2836 23 6 Q1 Si4416DY or Si4800* R10 Open* R1 0 to 3 A 25 C5 0.1 , 22 Q2 Si4416DY or Si4800* 4 18 17 C4 1, 2, 3 0.1 mF 5 6 20 CS5 FB5 VOUT , *Note: Use Si4800 for Q1 to Q4 with D1 and D3; or use Si4416DY for Q1 and Q2, Si4812DY for Q3 and Q4 , Q1*, Q2* Si4416DY N-MOSFET SO-8 Si4416DY Vishay Siliconix 16 2 Q3*, Q4


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PDF Si786DB Si786 500-mA 25-mA 24-VDC) CRCW08050000FRT1 595D336X0035R2T GRM42-6, VJ0805Y106KXAAT SI4800 GRM42-6 X7R 106k LX322 vitramon 1N4148 SOT-23 Si4416DY gds04 augat VJ0805Y103KXAAT
10mH inductor

Abstract: 1N4148 SOT-23 Augat WSL25 N-CHANNEL MOSFET 30V 2A SOT-23 C12120 Si4812DY Si4416DY SPRAGUE DIP CAPACITOR CDR74B
Text: CMPD2836 C5 D2 C4 C1 BST3 BST5 C2 Q2 Si4416DY L1, 10 mH DH5 Q1 Si4416DY , Position SMT Switch SW­SO8 Augat 17 2 Q1, Q2 N-Channel MOSFET SO-8 Si4416DY


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PDF Si9136DB Si9136 200-kHz 30-mA 28-Pin CDRH125-100 10-mH CDRH125 CDRH62B 10mH inductor 1N4148 SOT-23 Augat WSL25 N-CHANNEL MOSFET 30V 2A SOT-23 C12120 Si4812DY Si4416DY SPRAGUE DIP CAPACITOR CDR74B
playstation 2 power supply

Abstract: playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer playstation power supply
Text: SI4410DY · SI4416DY · SI9410DY · SI9936DY 20V, 9m 20V, 50m 20V, 100m 30V, 30m 30V, 30m 30V, 120m , SI4416DY · SI9410DY · SI9936DY · PHN210T · PHN203 20V, 9m 20V, 50m 20V, 100m 30V, 30m 30V, 30m , · PHN210T · PHN203 · SI4420DY · SI4410DY · SI4416DY · SI9410DY · SI9936DY 20V, 9m 20V, 50m


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PDF OT223 BSH105 BSH103 PHP225 PHC21025 playstation 2 power supply playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer playstation power supply
HTGB

Abstract: FDS*35A FDS*6609A fds4559 fds5680 SI9945 fds6912 FDS6675A FDS4935A 5FS1
Text: Phone: 63-32-3415636 PCN Type: Bond Wire Material Composition Effectivity Expected 1st Device , Qualification: CS Ti Device : FDS2572 Product Line: 02XD24 Stress Test TMCL High Temp 150 PRCL , 168 500 1000 168 500 1000 168 500 1000 539 Device : FDS2670 Product Line: 02XD24 Stress , Device : FDS3672 Product Line: 02XD24 Stress Test TMCL High Temp 150 PRCL Low Temp -65 , 121 100 15 77 96 96 96 96 PSI TOTAL 541 Device : FDS6676 Product Line


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PDF fairchil936 BNY001A SI4412DY SI4425DY SI4450DY SI4467DY SI4539DY SI4835DY SI4920DY SI4953DY HTGB FDS*35A FDS*6609A fds4559 fds5680 SI9945 fds6912 FDS6675A FDS4935A 5FS1
2001 - IRF3710 equivalent

Abstract: IRFP150N equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
Text: -150P PSMN035-150B PSMN020-150W PHP45N03LT SI9956DY SI9936DY PHD24N03LT SI4416DY SI9410DY PHP45N03LT PHB45N03LT SI4416DY PHD50N03LT PHP50N03LT PHB50N03LT PHP69N03LT PHB83N03LT SI4420DY PHP87N03LT


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PDF IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRF3710 equivalent IRFP150N equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
2005 - CMPD2836

Abstract: Si4416DY Si9138 Si9138DB Si9138LG SSOP-28 SMPS CIRCUIT DIAGRAM for computers BLOCK DIAGRAM OF SMPS
Text: (Soldering, 10 Sec.) . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Notes a. Device mounted with , listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. SPECIFICATIONS Test Conditions , Q2 Si4416DY L1, 10 mH DH5 Q1 Si4416DY DH3 C5 4.7 mF C4 33 mF R2 0.02 W C3


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PDF Si9138 300-kHz /30-mA 28-Pin 08-Apr-05 CMPD2836 Si4416DY Si9138 Si9138DB Si9138LG SSOP-28 SMPS CIRCUIT DIAGRAM for computers BLOCK DIAGRAM OF SMPS
2005 - SMPS flyback transformer medical

Abstract: 7 pin SMPS computer smps circuit diagram pc smps circuit diagram SSOP-28 Si9137LG Si9137DB Si9137 Si4416DY flyback transformer for medical
Text: . . . . . . . . . . . . . . . . . . . . 300_C Notes a. Device mounted with all leads soldered or , Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections , periods may affect device reliability. SPECIFICATIONS Test Conditions Parameter Limits VIN = 15 , 0.1 mF BST5 Q2 Si4416DY L1, 10 mH DH5 Q1 Si4416DY DH3 C5 4.7 mF C4 33 mF


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PDF Si9137 300-kHz /30-mA 28-Pin 08-Apr-05 SMPS flyback transformer medical 7 pin SMPS computer smps circuit diagram pc smps circuit diagram SSOP-28 Si9137LG Si9137DB Si9137 Si4416DY flyback transformer for medical
2004 - MAC111

Abstract: flyback transformer 12v dc
Text: . . . . . . . 300_C Notes a. Device mounted with all leads soldered or welded to PC board. b. Derate , permanent damage to the device . These are stress ratings only, and functional operation of the device at , is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device , BST3 Q1 Si4416DY BST5 DH5 DH3 LX3 R1 Rcs2 0.02 W Q4 Si4812DY LX5 VL D1 CMPD2836 D2 C2 0.1 mF Q2 Si4416DY L1, 10 mH C4 33 mF +5 V up to 30 mA C5 4.7 mF R7 Rcs1 0.02 W C3 330 mF +5 V +3.3 V


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PDF Si9135 200-kHz/300-kHz 28-Pin Si9135 Si9135, Si9135. S-40806--Rev. 26-Apr-04 MAC111 flyback transformer 12v dc
Not Available

Abstract: No abstract text available
Text: . -0.3 V to +5.5 V a. Device mounted with all leads soldered or welded to PC board. DL3, DL5 , Stresses beyond those listed under “Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only and functional operation o f the device at these o r any other conditions , absolute maximum rating conditions for extended periods may affect device reliability. S P E C IF IC A , 0.1 pF bst5 Q2 Si4416DY DH3 L1, 10 pH _( T Y T L lx5 R ? R CS1 0.02 Q


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PDF SI9135 200-kHz/300-kHz 28-Pin Si9135
Not Available

Abstract: No abstract text available
Text: (Soldering, 10 Sec.) °C 300 Notes: a. Device Mounted with all leads soldered or welded to PC board , € may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the , device reliability. SPECIFICATIONS Parameter Specific Test Conditions VIN = 15 V, IVL = IREF = 0 , BST3 C2 0.1 µF BST5 Q2 Si4416DY L1, 10 µH DH5 Q1 Si4416DY DH3 C5 4.7 µF


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PDF Si9138 Si9135 Si9135 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Not Available

Abstract: No abstract text available
Text: Operating Temperature Range Storage Temperature Range Lead Temperature (Soldering, 10 Sec.) Notes: a. Device , "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational , periods may affect device reliability. SPECIFICATIONS Parameter 3.3 V Buck Controller Total Regulation , C1 0.1 µF BST3 BST5 DH5 Q1 Si4416DY DH3 LX3 R1 Rcs2 0.02 Q4 Si4812DY LX5 C3 330 µF VL + 5 V up to 30


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PDF Si9138 Si9136 Si9136 28-pin 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2011 - Not Available

Abstract: No abstract text available
Text: Storage Temperature Range Lead Temperature (Soldering, 10 Sec.) Notes: a. Device Mounted with all leads , "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational , periods may affect device reliability. Limit - 0.3 to + 36 ±2 - 0.3 to + 6.5 - 0.3 to + 36 Continuous - , DH5 Q1 Si4416DY DH3 LX3 R1 Rcs2 0.02 Q4 Si4812DY LX5 C3 330 µF VL + 5 V up to 30 mA D1 CMPD2836 D2 C4


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PDF Si9138 Si9135 Si9135 11-Mar-11
Not Available

Abstract: No abstract text available
Text: Temperature Range Lead Temperature (Soldering, 10 Sec.) Notes: a. Device Mounted with all leads soldered or , Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections , periods may affect device reliability. SPECIFICATIONS Parameter 3.3 V Buck Controller Total , µF BST3 C2 0.1 µF BST5 Q2 Si4416DY L1, 10 µH DH5 Q1 Si4416DY DH3 C5 4.7


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PDF Si9138 Si9136 Si9136 28-pin 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
2005 - CMPD2836

Abstract: Si4416DY Si4812DY Si9136 Si9136DB Si9136LG SSOP-28
Text: . Device mounted with all leads soldered or welded to PC board. b. Derate 9.52 mW/_C above 90_C. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions , absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS , Q2 Si4416DY L1, 10 mH DH5 Q1 Si4416DY DH3 C5 4.7 mF C4 33 mF R7 Rcs1 0.02 W


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PDF Si9136 28-Pin 200-kHz Si9136 08-Apr-05 CMPD2836 Si4416DY Si4812DY Si9136DB Si9136LG SSOP-28
2004 - SMPS CIRCUIT DIAGRAM 12v 5v

Abstract: No abstract text available
Text: 300_C Notes a. Device mounted with all leads soldered or welded to PC board. b. Derate 9.52 mW/_C , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute maximum rating conditions for extended periods may affect device reliability , Si9137 Vishay Siliconix STANDARD APPLICATION CIRCUIT VIN C7 33 mF D1A VL D1B C2 0.1 mF Q2 Si4416DY L1, 10 mH R2 0.02 W C4 33 mF C5 4.7 mF +5 V up to 30 mA CMPD2836 VIN C1 0.1 mF BST3 Q1 Si4416DY BST5 DH5


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PDF Si9137 300-kHz /30-mA 28-Pin Si9137 S-40808--Rev. 26-Apr-04 SMPS CIRCUIT DIAGRAM 12v 5v
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