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Si4410DY SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si4410DY SPICE Device Model Si4410DY SPICE Device Model ECAD Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

Si4410DY SPICE Device Model Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: , 1-408-970-5600. Please request FaxBack document #70148. A SPICE Model data sheet is available for this product , TEMIC S e m i c o n d u c t o r s 4410DY N-Channel Enhancement-Mode MOSFET Product , -Apr-96 3-1 4410DY Specifications (Tj = 25 °C Unless Otherwise Noted) Parameter Static Gate Threshold , c o n d u c t o r s 4410DY Transfer Characteristics Tÿpical Characteristics (25 °C Unless , 4410DY Topical Characteristics (25 °C Unless Otherwise Noted) Temic S e m i c o n d u c t o r s


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PDF 4410DY S-47958--Rev. 15-Apr-96
1996 - P55 MOSFET

Abstract: DIFS4 mosfet p55 low cost capacitor 0.1 mf Si9145 1N4148 Sot23 PACKAGE Si4435DY AN719 si4435 1n4148 0805
Text: presently on the market. SPICE Simulations Microprocessors for P55 and P6 The worstcase load transients specified by Intel for the P55 and P6 were simulated using Intusoft SPICE simulation , power demands of these processors. 1 AN719 Previous SPICE simulation results for the P54 load , shown in the SPICE simulations (Figures 1 and 2), the microproces sor's current is provided by the , High-Side P-Channel Si4435DY Quantity Low-Side N-Channel Si4410DY Quantity Input (C1-C2


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PDF AN719 Si9145 P54CVRE, 350ns 31-Jul-95 6SA330M 10SA220M CTX07-12877 CTX10-5-KMLP P55 MOSFET DIFS4 mosfet p55 low cost capacitor 0.1 mf 1N4148 Sot23 PACKAGE Si4435DY AN719 si4435 1n4148 0805
1995 - P55 MOSFET

Abstract: 1N4148 0805 Si9145 Si9145BY Si4435DY Si4410DY P54C LM4040 AN719 CTX07-12877
Text: power supply solution presently on the market. (07/31/95) SPICE Simulations Microprocessors for , simulated using Intusoft SPICE simulation software. The decoupling capacitance and parasitic parameter , cost, while meeting the power demands of these processors. Previous SPICE simulation results for the , demands of the microprocessor. As shown in the SPICE simulations (Figures 1 and 2), the microprocessor , NChannel Si4410DY Quantity Input (C1C2) Capacitor Oscon220 mF 5.5A 1 1 1 8A 2 1


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PDF AN719 Si9145 P54CVRE, 350ns 6SA330M 10SA220M CTX0712877 CTX105KMLP Si9145BY P55 MOSFET 1N4148 0805 Si4435DY Si4410DY P54C LM4040 AN719 CTX07-12877
MLL34

Abstract: ic 3525 pwm application dc to dc converter si4435 CRCW0805224JRT1 Si9145BY Si4435DY Si4410DY AN718 mll34 footprint emi khz 0805 2A
Text: a SPICE program for various output capacitance characteristics (Table 1). A SPICE simulation with , average model and stated below. RL 1 Voc = - - R cs 1 , Si4410DY Trench MOSFET from Siliconix offers an rDS(on) of 0.02 at VGS = 4.5 V. At a 7-A output current , Si4435DYs as the high-side switch and one n-channel Si4410DY as the low-side switch. FIGURE 8 , SO-8 Vishay Siliconix U4 Si4410DY N-Ch MOSFET SO-8 Vishay Siliconix U6


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PDF AN718 32-kHz TPSD107K010R CRCW0805224JRT1 VJ0805A221KXAAT CONN2X15 LM393M LM4040BIM OT-23-5 Si4410DY MLL34 ic 3525 pwm application dc to dc converter si4435 CRCW0805224JRT1 Si9145BY Si4435DY AN718 mll34 footprint emi khz 0805 2A
P55 MOSFET

Abstract: 1n4148 0805 AN719 Si9145 Si4435DY Si4410DY P54C LM4040 Siliconix An719 1N4148
Text: presently on the market. SPICE Simulations Microprocessors for P55 and P6 The worstcase load transients specified by Intel for the P55 and P6 were simulated using Intusoft SPICE simulation , , 1-408-970-5600. Please request FaxBack document #70589. Siliconix 31-Jul-95 1 AN719 Previous SPICE , microprocessor. As shown in the SPICE simulations (Figures 1 and 2), the microproces sor's current is provided , High-Side P-Channel Si4435DY Quantity Low-Side N-Channel Si4410DY Quantity Input (C1-C2


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PDF AN719 Si9145 P54CVRE, 350ns 31-Jul-95 6SA330M 10SA220M CTX07-12877 CTX10-5-KMLP P55 MOSFET 1n4148 0805 AN719 Si4435DY Si4410DY P54C LM4040 Siliconix An719 1N4148
ic 3525 pwm application dc to dc converter

Abstract: ic 3525 pwm application mll34 footprint DIFS4 3525 PWM 1n4148 spice model Si9145BY Si9145 P54C AN718
Text: a SPICE program for various output capacitance characteristics (Table 1). A SPICE simulation with , operating in continuous inductor current can be derived using the state space average model and stated , Trench technology. For example, the Si4410DY Trench MOSFET from Siliconix offers an rDS(on) of 0.02 W , Pentium converter using two p-channel Si4435DYs as the high-side switch and one n-channel Si4410DY as the , -8 Siliconix (800) 554-5565 U4 Si4410DY N-Ch MOSFET SO-8 Siliconix (800) 554-5565 U6


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PDF AN718 Si9145 SO-16 CONN2X15 LM393M LM4040BIM OT-23-5 Si4410DY Si4435DY Si9145BY ic 3525 pwm application dc to dc converter ic 3525 pwm application mll34 footprint DIFS4 3525 PWM 1n4148 spice model P54C AN718
1996 - ic 3525 pwm application dc to dc converter

Abstract: ic 3525 pwm application MLL34 AN718 P54C Si9145 Si9145BY "Schottky Diode"
Text: transient regulation. A 4-A transient response has been simulated using a SPICE program for various output capacitance characteristics (Table 1). A SPICE simulation with an 800-mF output capacitor with 0.0125-W ESR , inductor current can be derived using the state space average model and stated below. Voc + R R @ 1 , Si4410DY Trench MOSFET from Siliconix offers an rDS(on) of 0.02 W at VGS = 4.5 V. At a 7-A output current , Si4435DYs as the high-side switch and one n-channel Si4410DY as the low-side switch. 100 Efficiency


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PDF AN718 Si9145 SO-16 ProvR20 CONN2X15 LM393M LM4040BIM OT-23-5 Si4410DY Si4435DY ic 3525 pwm application dc to dc converter ic 3525 pwm application MLL34 AN718 P54C Si9145BY "Schottky Diode"
MLL34

Abstract: ic 3525 pwm application dc to dc converter DIFS4 AN718 P54C Si4410DY Si9145 Si9145BY
Text: transient regulation. A 4-A transient response has been simulated using a SPICE program for various output capacitance characteristics (Table 1). A SPICE simulation with an 800-µF output capacitor with 0.0125- ESR , operating in continuous inductor current can be derived using the state space average model and stated , Si4410DY Trench MOSFET from Siliconix offers an rDS(on) of 0.02 at VGS = 4.5 V. At a 7-A output current , Si4435DYs as the high-side switch and one n-channel Si4410DY as the low-side switch. FIGURE 8


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PDF AN718 Si9145 SO-16 Si9145B TPSD107K010R CRCW0805224JRT1 VJ0805A221KXAAT CONN2X15 LM393M MLL34 ic 3525 pwm application dc to dc converter DIFS4 AN718 P54C Si4410DY Si9145BY
1995 - AN718

Abstract: P54C Si4410DY Si4435DY Si9145 Si9145BY ic 3525 pwm application dc to dc converter
Text: transient regulation. A 4A transient response has been simulated using a SPICE program for various output capacitance characteristics (Table 1). A SPICE simulation with an 800mF output capacitor with 0.0125W ESR , using the state space average model and stated below. Voc + R R @ 1 ) S @1C @ R L cs o , Si4410DY Trench MOSFET from Siliconix offers an rDS(on) of 0.02 W at VGS = 4.5 V. At a 7A output current , Si4435DYs as the highside switch and one nchannel Si4410DY as the lowside switch. 100 Efficiency (%


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PDF AN718 Si9145 CONN2X15 LM393M LM4040BIM OT235 Si4410DY Si4435DY Si9145BY AN718 P54C ic 3525 pwm application dc to dc converter
1997 - Si4410DY

Abstract: Si4936DY Si6434DQ Si9410DY
Text: , 1-408-970-5600. Please request FaxBack document #70122. A SPICE Model data sheet is available for this product , Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V 30 ID (A) "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size-see Si6434DQ D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S


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PDF Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96
1996 - Si4410DY

Abstract: Si4936DY Si6434DQ Si9410DY
Text: , 1-408-970-5600. Please request FaxBack document #1204. A SPICE Model data sheet is available for this product , Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V 30 ID (A) "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size-see LITE FOOTR equivalent: Si6434DQ D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G


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PDF Si9410DY Si4410DY Si4936DY Si6434DQ S-47958--Rev. 15-Apr-96
1996 - a-14-s

Abstract: Si4410DY Si4936DY Si6434DQ Si9410DY
Text: , 1-408-970-5600. Please request FaxBack document #1204. A SPICE Model data sheet is available for this product , Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V 30 ID (A) "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size-see LITE FOOTR equivalent: Si6434DQ D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G


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PDF Si9410DY Si4410DY Si4936DY Si6434DQ S-47958--Rev. 15-Apr-96 a-14-s
1999 - Si9410DY

Abstract: Siliconix Si4410DY Si4936DY Si6434DQ
Text: Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70122. For SPICE model information via , Si9410DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size-see Si6434DQ D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View


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PDF Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96 Siliconix
2009 - SI4410DY

Abstract: No abstract text available
Text: SI4410DY N-channel TrenchMOS logic level FET Rev. 03 - 4 December 2009 Product data sheet , SI4410DY NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2 , SI4410DY Description plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 4 , current Tamb = 25 °C; pulsed SI4410DY _3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 - 4 December 2009 2 of 12 SI4410DY NXP Semiconductors N-channel


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PDF SI4410DY SI4410DY
1994 - IRFIBC44LC

Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
Text: presents the failure rate data for various device attributes. HTRB and HTGB failure rates are presented , The critical factor involved with the HTRB test is the field strength that is applied to the device , device to create the highest possible stress and thus maximize the field strength. The best case is the device with the lowest voltage rating type in the family because the bias applied in HTRB test creates the lowest field strength. The worst case device types are those that produce the highest field


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1998 - Not Available

Abstract: No abstract text available
Text: Ordering Information Device Marking SI4410DY Device SI4410DY Reel Size 13'' Tape Width 12mm Quantity 2500 units ©1998 Fairchild Semiconductor Corporation Si4410DY Rev. A Si4410DY DMOS , Si4410DY October 1998 ADVANCE INFORMATION Si4410DY Single N-Channel Logic Level , Current - Continuous - Pulsed Parameter Si4410DY 30 (Note 1a) Units V V A W °C ±20 10 50 , paper 2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% Si4410DY Rev. A SO-8 Tape and Reel


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PDF Si4410DY
2001 - MS-012AA

Abstract: Si4410DY
Text: Si4410DY N-channel enhancement mode field-effect transistor Rev. 02 - 05 July 2001 M3D315 , using TrenchMOSTM1 technology. Product availability: Si4410DY in SOT96-1 (SO8). 2. Features s Low , Royal Philips Electronics. d 5 1 Symbol MBB076 s Si4410DY Philips , 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor , of 13 Si4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor


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PDF Si4410DY M3D315 OT96-1 OT96-1, MS-012AA
1999 - Si4410DY

Abstract: No abstract text available
Text: Si4410DY * Single N-Channel Logic Level PowerTrench® MOSFET General Description Features , switching performance. Low gate charge. This device is well suited for low voltage and battery , Corporation Si4410DY Rev. B Si4410DY May 1999 6\PERO $ U Ã2Ã!$8ÃyrÃurvrÃrq 3DUDPHWHU , : Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% Si4410DY Rev. B Si4410DY (OHFWULFDO , or systems are devices or 2. A critical component is any component of a life support device or


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PDF Si4410DY
2001 - Not Available

Abstract: No abstract text available
Text: Si4410DY N-channel enhancement mode field-effect transistor M3D315 Rev. 01 - 20 Feb 2001 , package using TrenchMOSTM1 technology. Product availability: Si4410DY in SOT96-1 (SO8). 2. Features s , Philips Electronics. Philips Semiconductors Si4410DY N-channel enhancement mode field-effect , Si4410DY N-channel enhancement mode field-effect transistor 120 03aa11 03aa19 120 Ider (% , specification Rev. 01 - 20 Feb 2001 3 of 13 Philips Semiconductors Si4410DY N-channel enhancement


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PDF Si4410DY M3D315 OT96-1 OT96-1, MBK187
1999 - Not Available

Abstract: No abstract text available
Text: Si4410DY May 1999 DISTRIBUTION GROUP* Si4410DY Single N-Channel Logic Level PowerTrenchTM , maintain superior switching performance. This device is well suited for low voltage and battery powered , Fairchild Semiconductor Corporation Si4410DY Rev. B Si4410DY (OHFWULFDO &KDUDFWHULVWLFV 6\PERO , , Duty Cycle 2.0% Si4410DY Rev. B SO-8 Tape and Reel Data and Package Dimensions SOIC(8lds , device or system whose failure to perform can systems which, (a) are intended for surgical implant into


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PDF Si4410DY
Si4410DY

Abstract: No abstract text available
Text: Si4410DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features , switching performance. Low gate charge. This device is well suited for low voltage and battery , Corporation Si4410DY Rev. B Si4410DY May 1999 DISTRIBUTION GROUP* 6\PERO $ U Ã2Ã , % Si4410DY Rev. B Si4410DY (OHFWULFDO &KDUDFWHULVWLFV SO-8 Tape and Reel Data and Package , any component of a life support device or system whose failure to perform can systems which, (a) are


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PDF Si4410DY
2001 - TPS233x

Abstract: GRM40X7R105K16 SERVICE MANUAL SANYO TPS2330 TPS2300 GRM40X7R103K25 TPS2331 TPS5102 SD103-AWDICT GRM325F106ZH
Text: this warranty. Specific testing of all parameters of each device is not necessarily performed, except , TPS2331 is an active-high enabling device . The user can replace the TPS2331 with TPS2330 in order to , µF TP32 C28 0.1 µF C25 0.1 µF R25 100 k R24 1 k R7 0.01 Q5 Si4410DY , TP26 C19 Open Q3 Si4410DY TP25 Q4 Si4410DY R20 15 R21 Open R18 7.5 k R19 7.5 k Open Q2 Si4410DY C18 R17 15 C3 10 µF + + L2 6.8 µH C5 220 µF


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PDF TPS2330/TPS2331, TPS5102 SLVU047 SI4410DY Pin14 TPS2331 TPS233x GRM40X7R105K16 SERVICE MANUAL SANYO TPS2330 TPS2300 GRM40X7R103K25 TPS2331 TPS5102 SD103-AWDICT GRM325F106ZH
1999 - Si4410DY

Abstract: No abstract text available
Text: Si4410DY * Single N-Channel Logic Level PowerTrench® MOSFET General Description Features , switching performance. Low gate charge. This device is well suited for low voltage and battery , Corporation Si4410DY Rev. B Si4410DY May 1999 6\PERO $ U Ã2Ã!$8ÃyrÃurvrÃrq 3DUDPHWHU , : Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% Si4410DY Rev. B Si4410DY (OHFWULFDO , or systems are devices or 2. A critical component is any component of a life support device or


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PDF Si4410DY
2004 - CD4047 application note

Abstract: CD4047 applications CD4047 Application CD4047 CD4047 POWER pwm amplifier AN CD4047 CD4047 oscillator, CD4047 switch power CD4047 equivalent cd4047 application notes
Text: tendency in the digital world toward smaller device geometries and higher gate counts. This has led to , are too high for a single device to handle, inductor energy storage exceeds what is avail- Since , ­T +T RET RCC Q Q OSC C3 22µF 25V R3 1k U4 10 + Q2 R20 Si4410DY 1 C1 , OPTIONAL BAT54 C27, 0.47µF ISENSE2 R25 1 Q6 R19 Si4410DY 1 U3 7 PVCC2 8 G2 5 SHDN 6 COMP , , 1% RX RST (POWER FROM 5V) SYNC2 ISENSE1 L2 0.8µH Q5 Si4410DY R23 1


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1999 - 9959

Abstract: No abstract text available
Text: Si4410DY May 1999 DISTRIBUTION GROUP* Si4410DY Single N-Channel Logic Level PowerTrenchTM , maintain superior switching performance. This device is well suited for low voltage and battery powered , Fairchild Semiconductor Corporation Si4410DY Rev. B Si4410DY (OHFWULFDO &KDUDFWHULVWLFV 6\PERO , , Duty Cycle 2.0% Si4410DY Rev. B SO-8 Tape and Reel Data and Package Dimensions SOIC(8lds , or systems are devices or 2. A critical component is any component of a life support device or system


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PDF Si4410DY 9959
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