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Si4410BDY SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si4410BDY SPICE Device Model Si4410BDY SPICE Device Model ECAD Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

Si4410BDY SPICE Device Model Datasheets Context Search

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72284

Abstract: Si4410BDY
Text: SPICE Device Model Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET CHARACTERISTICS · , -51095Rev. B, 13-Jun-05 www.vishay.com 1 SPICE Device Model Si4410BDY Vishay Siliconix SPECIFICATIONS , , 13-Jun-05 SPICE Device Model Si4410BDY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA , the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline , , Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes


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PDF Si4410BDY 18-Jul-08 72284
2009 - SI4410BDY-T1-GE3

Abstract: Si4410BDY-T1-E3 Si4410BDY
Text: Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -Apr-09 www.vishay.com 1 Si4410BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C


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PDF Si4410BDY 2002/95/EC Si4410BDY-T1-E3 Si4410BDY-T1-GE3 18-Jul-08
2005 - Si4410BDY

Abstract: Si4410BDY-T1
Text: Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , Top View N-Channel MOSFET Ordering Information: Si4410BDY Si4410BDY-T1 (with Tape and Reel , -50366-Rev. C, 28-Feb-05 www.vishay.com 1 Si4410BDY Vishay Siliconix SPECIFICATIONS (TJ = 25 , . Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions


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PDF Si4410BDY Si4410BDY--T1 Si4410BDY--E3 Si4410BDY-T1--E3 08-Apr-05 Si4410BDY-T1
2009 - Not Available

Abstract: No abstract text available
Text: Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , Number: 72211 S09-0705-Rev. D, 27-Apr-09 www.vishay.com 1 Si4410BDY Vishay Siliconix , Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections , periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50


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PDF Si4410BDY 2002/96/EC Si4410BDY-T1-E3 Si4410BDY-T1-GE3 18-Jul-08
2005 - Not Available

Abstract: No abstract text available
Text: Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES ID (A) 10 8 PRODUCT , S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G Ordering Information: Si4410BDY , 30 Unit _C/W 1 Si4410BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE , under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the


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PDF Si4410BDY Si4410BDY--T1 Si4410BDY--E3 Si4410BDY-T1--E3 S-50366--Rev. 28-Feb-05
2008 - Not Available

Abstract: No abstract text available
Text: Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES ID (A) 10 8 PRODUCT , S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G Ordering Information: Si4410BDY , 30 Unit _C/W 1 Si4410BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE , under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the


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PDF Si4410BDY Si4410BDY--T1 Si4410BDY--E3 Si4410BDY-T1--E3 18-Jul-08
2012 - SI4410B

Abstract: No abstract text available
Text: Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on , Si4410BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute maximum rating conditions for extended periods may affect device reliability , : 72211 S09-0705-Rev. D, 27-Apr-09 Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 0.030 25


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PDF Si4410BDY 2002/95/EC Si4410BDY-T1-E3 Si4410BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4410B
2012 - Not Available

Abstract: No abstract text available
Text: Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on , Si4410BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute maximum rating conditions for extended periods may affect device reliability , : 72211 S09-0705-Rev. D, 27-Apr-09 Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 0.030 25


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PDF Si4410BDY 2002/95/EC Si4410BDY-T1-E3 Si4410BDY-T1-GE3 11-Mar-11
Si4410BDY

Abstract: Si4410BDY-T1-E3 Si4410BDY-T1-GE3
Text: Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -Apr-09 www.vishay.com 1 Si4410BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C


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PDF Si4410BDY 2002/95/EC Si4410BDY-T1-E3 Si4410BDY-T1-GE3 11-Mar-11
Si4410

Abstract: Si4410BDY-E3 Si4410BDY Si4410BDY-T1 Si4410BDY-T1-E3 Si4410DY-REVA
Text: Specification Comparison Vishay Siliconix Si4410BDY vs. Si4410DY-REVA Description: N-Channel, 30 V (D-S) MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4410BDY Replaces Si4410DY-REVA Si4410BDY-E3 (Lead (Pb)-free version) Replaces Si4410DY-REVA Si4410BDY-T1 Replaces , 25 °C, unless otherwise noted Parameter Symbol Si4410BDY Si4410DY-REVA Drain-Source , Si4410BDY Min Typ Si4410DY-REVA Max Min 3.0 Typ Max 1.0 Unit Static V(BR)DSS


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PDF Si4410BDY Si4410DY-REVA Si4410BDY-E3 Si4410BDY-T1 Si4410-T1-REVA Si4410BDY-T1-E3 Si4410
Not Available

Abstract: No abstract text available
Text: Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , Number: 72211 S09-0705-Rev. D, 27-Apr-09 www.vishay.com 1 Si4410BDY Vishay Siliconix , Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections , periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50


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PDF Si4410BDY 2002/95/EC Si4410BDY-T1-E3 Si4410BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2003 - Not Available

Abstract: No abstract text available
Text: conditions for extended periods may affect device reliability All voltages are with respect to DIGGND. ELECTROSTATIC DISCHARGE (ESD) PROTECTION TEST METHOD Human body model (HBM) Charged device model (CDM) MIN 2 1 , (PFP) TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and reeled , those listed under "absolute maximum ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those


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PDF TPS2342 SLUS572F 80-Lead TPS2342
2003 - Not Available

Abstract: No abstract text available
Text: conditions for extended periods may affect device reliability All voltages are with respect to DIGGND. ELECTROSTATIC DISCHARGE (ESD) PROTECTION TEST METHOD Human body model (HBM) Charged device model (CDM) MIN 2 1 , (PFP) TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and reeled , those listed under "absolute maximum ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those


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PDF TPS2342 SLUS572F 80-Lead TPS2342
2003 - pci slot pinout

Abstract: S-PQFP-G80 Board Layout TPS2342 TPS2342PFP TPS2342PFPR
Text: MIN UNIT Human body model (HBM) 2 kV Charged device model (CDM) 1 kV , ) -40°C to +85°C TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and , permanent damage to the device . These are stress ratings only, and functional operation of the device at , implied. Exposure to Absolute Maximum Rated conditions for extended periods may affect device reliability , functions applicable when the device is operating in Direct Mode. TERMINAL NUMBER NAME 1 15VGB


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PDF TPS2342 SLUS572F 80-Lead TPS2342 pci slot pinout S-PQFP-G80 Board Layout TPS2342PFP TPS2342PFPR
2003 - Not Available

Abstract: No abstract text available
Text: conditions for extended periods may affect device reliability All voltages are with respect to DIGGND. ELECTROSTATIC DISCHARGE (ESD) PROTECTION TEST METHOD Human body model (HBM) Charged device model (CDM) MIN 2 1 , (PFP) TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and reeled , those listed under "absolute maximum ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those


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PDF TPS2342 SLUS572F 80-Lead TPS2342
2003 - TPS2342

Abstract: TPS2342PFP TPS2342PFPR S-PQFP-G80 Package
Text: MIN UNIT Human body model (HBM) 2 kV Charged device model (CDM) 1 kV , ) -40°C to +85°C TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and , permanent damage to the device . These are stress ratings only, and functional operation of the device at , implied. Exposure to Absolute Maximum Rated conditions for extended periods may affect device reliability , functions applicable when the device is operating in Direct Mode. TERMINAL NUMBER NAME 1 15VGB


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PDF TPS2342 SLUS572E 80-Lead TPS2342 TPS2342PFP TPS2342PFPR S-PQFP-G80 Package
2003 - Not Available

Abstract: No abstract text available
Text: conditions for extended periods may affect device reliability All voltages are with respect to DIGGND. ELECTROSTATIC DISCHARGE (ESD) PROTECTION TEST METHOD Human body model (HBM) Charged device model (CDM) MIN 2 1 , (PFP) TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and reeled , those listed under "absolute maximum ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those


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PDF TPS2342 SLUS572E 80-Lead TPS2342
2003 - Not Available

Abstract: No abstract text available
Text: conditions for extended periods may affect device reliability All voltages are with respect to DIGGND. ELECTROSTATIC DISCHARGE (ESD) PROTECTION TEST METHOD Human body model (HBM) Charged device model (CDM) MIN 2 1 , (PFP) TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and reeled , those listed under "absolute maximum ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those


Original
PDF TPS2342 SLUS572F 80-Lead TPS2342
2003 - Not Available

Abstract: No abstract text available
Text: conditions for extended periods may affect device reliability All voltages are with respect to DIGGND. ELECTROSTATIC DISCHARGE (ESD) PROTECTION TEST METHOD Human body model (HBM) Charged device model (CDM) MIN 2 1 , (PFP) TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and reeled , those listed under "absolute maximum ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those


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PDF TPS2342 SLUS572F 80-Lead TPS2342
2003 - Not Available

Abstract: No abstract text available
Text: conditions for extended periods may affect device reliability All voltages are with respect to DIGGND. ELECTROSTATIC DISCHARGE (ESD) PROTECTION TEST METHOD Human body model (HBM) Charged device model (CDM) MIN 2 1 , (PFP) TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and reeled , those listed under "absolute maximum ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those


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PDF TPS2342 SLUS572E 80-Lead TPS2342
2003 - IRF13025

Abstract: No abstract text available
Text: conditions for extended periods may affect device reliability All voltages are with respect to DIGGND. ELECTROSTATIC DISCHARGE (ESD) PROTECTION TEST METHOD Human body model (HBM) Charged device model (CDM) MIN 2 1 , (PFP) TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and reeled , those listed under "absolute maximum ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those


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PDF TPS2342 SLUS572E 80-Lead TPS2342 IRF13025
2003 - Not Available

Abstract: No abstract text available
Text: conditions for extended periods may affect device reliability All voltages are with respect to DIGGND. ELECTROSTATIC DISCHARGE (ESD) PROTECTION TEST METHOD Human body model (HBM) Charged device model (CDM) MIN 2 1 , (PFP) TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and reeled , those listed under "absolute maximum ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those


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PDF TPS2342 SLUS572E 80-Lead TPS2342
2003 - Not Available

Abstract: No abstract text available
Text: conditions for extended periods may affect device reliability All voltages are with respect to DIGGND. ELECTROSTATIC DISCHARGE (ESD) PROTECTION TEST METHOD Human body model (HBM) Charged device model (CDM) MIN 2 1 , (PFP) TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and reeled , those listed under "absolute maximum ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those


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PDF TPS2342 SLUS572D 80-Lead TPS2342
5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Text: 40-V (D-S) MOSFET RDSon=14mOhm@ ID=-10.5A, VGS=-10V SMD SO-8 Si4410BDY N-Channel 30 , -V (D-S) MOSFET RDSon=2Ohm@ ID=300mA, VGS=10V SOT-23 (TO-236) Si4410BDY N-Channel 30-V (D-S , Status Si4410BDY Description Features Package N-Channel 30-V (D-S) MOSFET RDSon


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PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
2003 - Not Available

Abstract: No abstract text available
Text: conditions for extended periods may affect device reliability All voltages are with respect to DIGGND. ELECTROSTATIC DISCHARGE (ESD) PROTECTION TEST METHOD Human body model (HBM) Charged device model (CDM) MIN 2 1 , (PFP) TPS2342PFP (1) Add suffix R to device type (e.g. TPS2342PFPR) to specify taped and reeled , those listed under "absolute maximum ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those


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PDF TPS2342 SLUS572F 80-Lead TPS2342
Supplyframe Tracking Pixel