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Vishay Siliconix
SI4406DY-T1-E3 N-CHANNEL 30V (D-S) MOSFET SI4406DY-T1-E3 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation SI4406DY-T1-E3 Bulk 0 2,500 - - - - $1.75 More Info
Vishay Intertechnologies
SI4406DY-T1-E3 SI4406DY-T1-E3 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics SI4406DY-T1-E3 5,000 - - - - - More Info
Vishay Intertechnologies
SI4406DYT1E3 Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA SI4406DYT1E3 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. SI4406DYT1E3 2,500 - - - - - More Info

Si4406DY-T1 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
Si4406DY-T1 Si4406DY-T1 ECAD Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
SI4406DY-T1-E3 SI4406DY-T1-E3 ECAD Model Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 13A 8-SOIC Original PDF
SI4406DY-T1-GE3 SI4406DY-T1-GE3 ECAD Model Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 13A 8-SOIC Original PDF

Si4406DY-T1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - Si4406DY

Abstract: Si4406DY-T1
Text: Si4406DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for "Low Side" Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V 30 ID (A) 17 APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4406DY Si4406DY-T1


Original
PDF Si4406DY Si4406DY-T1 S-03951--Rev. 26-May-03
2005 - SI4406DY

Abstract: No abstract text available
Text: Si4406DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V ID (A) 20 17 D TrenchFETr Power MOSFET D Optimized for "Low Side" Synchronous Rectifier Operation D 100% RG Tested APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4406DY Si4406DY-T1 (with Tape and Reel) 8 7 6 5 D D D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25


Original
PDF Si4406DY Si4406DY-T1 08-Apr-05
2007 - SI4406DY

Abstract: No abstract text available
Text: Si4406DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) () 0.0045 at VGS = 10 V 0.0055 at VGS = 4.5 V ID (A) 20 17 FEATURES · TrenchFET® Power MOSFET · Optimized for "Low Side" Synchronous Rectifier Operation · 100 % RG Tested Available RoHS* COMPLIANT APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4406DY-T1 Si4406DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET 8 7 6 5 D D D D G · DC/DC Converters · Synchronous Rectifiers ABSOLUTE MAXIMUM


Original
PDF Si4406DY Si4406DY-T1 Si4406DY-T1-E3 08-Apr-05
2008 - SI4406DY

Abstract: No abstract text available
Text: Si4406DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) () 0.0045 at VGS = 10 V 0.0055 at VGS = 4.5 V ID (A) 20 17 FEATURES · TrenchFET® Power MOSFET · Optimized for "Low Side" Synchronous Rectifier Operation · 100 % RG Tested Available RoHS* COMPLIANT APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4406DY-T1 Si4406DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET 8 7 6 5 D D D D G · DC/DC Converters · Synchronous Rectifiers ABSOLUTE MAXIMUM


Original
PDF Si4406DY Si4406DY-T1 Si4406DY-T1-E3 18-Jul-08
Si4406DY

Abstract: Si4406DY-T1-E3
Text: Top View S Ordering Information: Si4406DY-T1-E3 (Lead (Pb)-free) Si4406DY-T1-GE3 (Lead (Pb)-free


Original
PDF Si4406DY Si4406DY-T1-E3 Si4406DY-T1-GE3 18-Jul-08
2012 - SI4406DY

Abstract: No abstract text available
Text: Si4406DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0045 at VGS = 10 V 0.0055 at VGS = 4.5 V ID (A) 20 17 FEATURES · Halogen-free According to IEC 61249-2-21 Available · TrenchFET® Power MOSFET · Optimized for "Low Side" Synchronous Rectifier Operation · 100 % Rg Tested APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4406DY-T1-E3 (Lead (Pb)-free) Si4406DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G


Original
PDF Si4406DY Si4406DY-T1-E3 Si4406DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SI4406DY

Abstract: No abstract text available
Text: D G Top View S Ordering Information: Si4406DY-T1-E3 (Lead (Pb)-free) Si4406DY-T1-GE3 (Lead


Original
PDF Si4406DY Si4406DY-T1-E3 Si4406DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2012 - SI4406DY

Abstract: No abstract text available
Text: Si4406DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0045 at VGS = 10 V 0.0055 at VGS = 4.5 V ID (A) 20 17 FEATURES · Halogen-free According to IEC 61249-2-21 Available · TrenchFET® Power MOSFET · Optimized for "Low Side" Synchronous Rectifier Operation · 100 % Rg Tested APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4406DY-T1-E3 (Lead (Pb)-free) Si4406DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G


Original
PDF Si4406DY Si4406DY-T1-E3 Si4406DY-T1-GE3 11-Mar-11
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