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Si3991DV SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si3991DV SPICE Device Model Si3991DV SPICE Device Model ECAD Model Vishay Dual P-Channel 30-V (D-S) MOSFET Original PDF

Si3991DV SPICE Device Model Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - Si3991DV

Abstract: No abstract text available
Text: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT , -40575-Rev. C, 29-Mar-04 www.vishay.com 1 Si3991DV New Product Vishay Siliconix SPECIFICATIONS , VGS - Gate-to-Source Voltage (V) Document Number: 72427 S-40575-Rev. C, 29-Mar-04 Si3991DV New , Voltage (V) www.vishay.com 3 Si3991DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS , -Mar-04 Si3991DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized


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PDF Si3991DV Si3991DV-T1--E3 18-Jul-08
2005 - Not Available

Abstract: No abstract text available
Text: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT , RthJF Typical 97 132 78 Maximum 115 155 95 Unit _C/W 1 Si3991DV Vishay Siliconix , -Mar-04 2 Si3991DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain , Voltage (V) www.vishay.com 3 Si3991DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25 , Duration (sec) Document Number: 72427 S-40575-Rev. C, 29-Mar-04 www.vishay.com 4 Si3991DV New


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PDF Si3991DV Si3991DV-T1--E3 08-Apr-05
GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 Si3861BDV Si5947DU Si7705DN sC89-6 SI7100DN Si3865BDV si1016x
Text: . For device selection, see www.vishay.com/mosfets. MICRO fOOT® Provides lowest On-resistance 2 , drawings, sPicE models, reliability information, and part marking. other web information includes , 3.5 8.5 Si3993DV Dual -30 20 0.133 0.245 2.2 3.1 1.15 Si3991DV


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PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 Si3861BDV Si5947DU Si7705DN sC89-6 SI7100DN Si3865BDV si1016x
1995 - fs5 mosfet

Abstract: INA209 Si3991DV TPS2490 TSSOP-16 Texas Instruments INA
Text: shunts on buses that can vary from 0V to 26V. The device uses a single +3V to +5.5V supply, drawing a , degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications , ­40 to +150 °C Junction Temperature (1) (2) 2 °C 2000 V Charged-Device Model 1000 V Machine Model (MM) ESD Ratings +150 Human Body Model 150 V Stresses


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PDF INA209 SBOS403 INA209 fs5 mosfet Si3991DV TPS2490 TSSOP-16 Texas Instruments INA
1995 - SD1480

Abstract: No abstract text available
Text: that can vary from 0V to 26V. The device uses a single +3V to +5.5V supply, drawing a maximum of 1.5mA , degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications , Operating Temperature Storage Temperature Junction Temperature Human Body Model ESD Ratings Charged-Device Model Machine Model (MM) (1) (2) Stresses above these ratings may cause permanent damage. Exposure to


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PDF INA209 SBOS403 INA209 INA209pplication SD1480
1995 - fs5 mosfet

Abstract: SPN12 INA209 Si3991DV TPS2490 TSSOP-16
Text: shunts on buses that can vary from 0V to 26V. The device uses a single +3V to +5.5V supply, drawing a , degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications , ­40 to +150 °C Junction Temperature (1) (2) 2 °C 2000 V Charged-Device Model 1000 V Machine Model (MM) ESD Ratings +150 Human Body Model 150 V Stresses


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PDF INA209 SBOS403 INA209 fs5 mosfet SPN12 Si3991DV TPS2490 TSSOP-16
1995 - Not Available

Abstract: No abstract text available
Text: that can vary from 0V to 26V. The device uses a single +3V to +5.5V supply, drawing a maximum of 1.5mA , degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications , Operating Temperature Storage Temperature Junction Temperature Human Body Model ESD Ratings Charged-Device Model Machine Model (MM) (1) (2) Stresses above these ratings may cause permanent damage. Exposure to


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PDF INA209 SBOS403 INA209 INA209pplication
1995 - SD1180

Abstract: 2SD420 SD080 SPN13 2SD92 CDP6
Text: that can vary from 0V to 26V. The device uses a single +3V to +5.5V supply, drawing a maximum of 1.5mA , degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications , Operating Temperature Storage Temperature Junction Temperature Human Body Model ESD Ratings Charged-Device Model Machine Model (MM) (1) (2) Stresses above these ratings may cause permanent damage. Exposure to


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PDF INA209 SBOS403 INA209 INA209pplication SD1180 2SD420 SD080 SPN13 2SD92 CDP6
2007 - Not Available

Abstract: No abstract text available
Text: from 0V to 26V. The device uses a single +3V to +5.5V supply, drawing a maximum of 1.5mA of supply , device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION , +150 ° C Junction Temperature +150 ° C Human Body Model (1) (2) 2 2000 V Charged-Device Model 1000 V Machine Model (MM) ESD Ratings 150 V Stresses


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PDF INA209 SBOS403B
2010 - 345s

Abstract: No abstract text available
Text: cause damage. ESD damage can range from subtle performance degradation to complete device failure , cause the device not to meet its published specifications. PACKAGE INFORMATION (1) PRODUCT TMP512 , Model (HBM) ESD Ratings Charged-Device Model (CDM) Machine Model (MM) (1) (2) Voltage Current , periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. VIN+ and VIN­ may have a


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PDF TMP512 TMP513 SBOS491A TMP512, 12-BIT TMP512 345s
2010 - SD1480

Abstract: No abstract text available
Text: cause damage. ESD damage can range from subtle performance degradation to complete device failure , cause the device not to meet its published specifications. PACKAGE INFORMATION (1) PRODUCT TMP512 , Model (HBM) ESD Ratings Charged-Device Model (CDM) Machine Model (MM) (1) (2) Voltage Current , periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. VIN+ and VIN­ may have a


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PDF TMP512 TMP513 SBOS491A TMP512, 12-BIT TMP512 SD1480
2007 - 8002 AUDIO amplifier

Abstract: FET 7998 SPN8 BWU11 TSSOP-16 TPS2490 Si3991DV INA209 mws spn fs5 mosfet
Text: . Critical The INA209 senses across shunts on buses that can vary from 0V to 26V. The device uses a , device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION , °C Junction Temperature +150 °C Human Body Model 2000 V Charged-Device Model 1000 V Machine Model (MM) 150 V ESD Ratings (1) (2) 2 Stresses above these


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PDF INA209 SBOS403B 8002 AUDIO amplifier FET 7998 SPN8 BWU11 TSSOP-16 TPS2490 Si3991DV INA209 mws spn fs5 mosfet
2007 - INA209

Abstract: Si3991DV TPS2490 TSSOP-16 marking po3 mosfet
Text: . Critical The INA209 senses across shunts on buses that can vary from 0V to 26V. The device uses a , device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION , °C Junction Temperature +150 °C Human Body Model 2000 V Charged-Device Model 1000 V Machine Model (MM) 150 V ESD Ratings (1) (2) 2 Stresses above these


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PDF INA209 SBOS403B INA209 Si3991DV TPS2490 TSSOP-16 marking po3 mosfet
2010 - BD12 NPN transistors

Abstract: No abstract text available
Text: damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not , document, or visit the TMP512/TMP513 product folder at www.ti.com. Product preview device . ABSOLUTE , Model (HBM) ESD Ratings Charged-Device Model (CDM) Machine Model (MM) (1) (2) Voltage Current , periods may degrade device reliability. These are stress ratings only, and functional operation of the


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PDF TMP512 TMP513 SBOS491 TMP512, 12-BIT TMP512 BD12 NPN transistors
2007 - SD1480

Abstract: No abstract text available
Text: Filter CMP Critical The INA209 senses across shunts on buses that can vary from 0V to 26V. The device , device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION , Temperature Storage Temperature Junction Temperature Human Body Model ESD Ratings Charged-Device Model Machine Model (MM) (1) (2) Stresses above these ratings may cause permanent damage. Exposure to absolute


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PDF INA209 SBOS403B INA209 SD1480
2010 - transistor BD6

Abstract: BD12 NPN transistors TMP512 TMP513 Mosfet RM3 QFN-16 R3M marking 48 fs15 diode
Text: procedures can cause damage. ESD damage can range from subtle performance degradation to complete device , changes could cause the device not to meet its published specifications. PACKAGE INFORMATION (1 , /TMP513 product folder at www.ti.com. Product preview device . ABSOLUTE MAXIMUM RATINGS (1) Over , Storage Temperature Junction Temperature (1) (2) 2 °C 2000 V Charged-Device Model (CDM) 1000 V Machine Model (MM) ESD Ratings +150 Human Body Model (HBM) 150 V Stresses


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PDF TMP512 TMP513 SBOS491 TMP512, 12-BIT transistor BD6 BD12 NPN transistors TMP512 TMP513 Mosfet RM3 QFN-16 R3M marking 48 fs15 diode
2010 - Not Available

Abstract: No abstract text available
Text: cause damage. ESD damage can range from subtle performance degradation to complete device failure , cause the device not to meet its published specifications. PACKAGE INFORMATION (1) PRODUCT TMP512 , Model (HBM) ESD Ratings Charged-Device Model (CDM) Machine Model (MM) (1) (2) Voltage Current , periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. VIN+ and VIN­ may have a


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PDF TMP512 TMP513 SBOS491A TMP512, 12-BIT TMP512
2010 - 10M500

Abstract: No abstract text available
Text: damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not , document, or visit the TMP512/TMP513 product folder at www.ti.com. Product preview device . ABSOLUTE , Model (HBM) ESD Ratings Charged-Device Model (CDM) Machine Model (MM) (1) (2) Voltage Current , periods may degrade device reliability. These are stress ratings only, and functional operation of the


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PDF TMP512 TMP513 SBOS491 TMP512, 12-BIT TMP512 10M500
2010 - BD12 NPN transistors

Abstract: TMP513A Mosfet RM3 Diode marking CODE R1M TMP513AIRSAR transistor BD6 sd9 transistor fs15 diode marking SD1480
Text: cause damage. ESD damage can range from subtle performance degradation to complete device failure , cause the device not to meet its published specifications. PACKAGE INFORMATION (1) PRODUCT TMP512 , Model (HBM) ESD Ratings Charged-Device Model (CDM) Machine Model (MM) (1) (2) Voltage Current , periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. VIN+ and VIN­ may have a


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PDF TMP512 TMP513 SBOS491A TMP512, 12-BIT TMP512 BD12 NPN transistors TMP513A Mosfet RM3 Diode marking CODE R1M TMP513AIRSAR transistor BD6 sd9 transistor fs15 diode marking SD1480
2010 - Transistor FS10

Abstract: No abstract text available
Text: cause damage. ESD damage can range from subtle performance degradation to complete device failure , cause the device not to meet its published specifications. PACKAGE INFORMATION (1) PRODUCT , Human Body Model (HBM) 2000 V Charged-Device Model (CDM) 1000 V Machine Model (MM , extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. VIN+ and VINâ


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PDF TMP512 TMP513 SBOS491A TMP512, 12-BIT Transistor FS10
2007 - SD1480

Abstract: CDP6
Text: Filter CMP Critical The INA209 senses across shunts on buses that can vary from 0V to 26V. The device , device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION , Temperature Storage Temperature Junction Temperature Human Body Model ESD Ratings Charged-Device Model Machine Model (MM) (1) (2) Stresses above these ratings may cause permanent damage. Exposure to absolute


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PDF INA209 SBOS403B INA209 SD1480 CDP6
2007 - Not Available

Abstract: No abstract text available
Text: across shunts on buses that can vary from 0V to 26V. The device uses a single +3V to +5.5V supply , range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to , +150 °C Human Body Model 2000 V Charged-Device Model 1000 V Machine Model (MM , . Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are


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PDF INA209 SBOS403A INA209
2007 - TSSOP-16

Abstract: INA209 Si3991DV TPS2490
Text: shunts on buses that can vary from 0V to 26V. The device uses a single +3V to +5.5V supply, drawing a , degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications , to +150 °C Junction Temperature +150 °C Human Body Model 2000 V Charged-Device Model 1000 V Machine Model (MM) 150 V ESD Ratings (1) (2) 2 Stresses


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PDF INA209 SBOS403A INA209 TSSOP-16 Si3991DV TPS2490
2010 - TMP513

Abstract: Mosfet RM3
Text: cause damage. ESD damage can range from subtle performance degradation to complete device failure , cause the device not to meet its published specifications. PACKAGE INFORMATION (1) PRODUCT TMP512 , Model (HBM) ESD Ratings Charged-Device Model (CDM) Machine Model (MM) (1) (2) Voltage Current , periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. VIN+ and VIN­ may have a


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PDF TMP512 TMP513 SBOS491A TMP512, 12-BIT TMP512 TMP513 Mosfet RM3
2010 - Not Available

Abstract: No abstract text available
Text: cause damage. ESD damage can range from subtle performance degradation to complete device failure , cause the device not to meet its published specifications. PACKAGE INFORMATION (1) PRODUCT TMP512 , Model (HBM) ESD Ratings Charged-Device Model (CDM) Machine Model (MM) (1) (2) Voltage Current , periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. VIN+ and VIN­ may have a


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PDF TMP512 TMP513 SBOS491A TMP512, 12-BIT TMP512
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