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Si3460DV SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si3460DV SPICE Device Model Si3460DV SPICE Device Model ECAD Model Vishay N-Channel 20-V (D-S) MOSFET Original PDF

Si3460DV SPICE Device Model Datasheets Context Search

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Si3460DV

Abstract: No abstract text available
Text: SPICE Device Model Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET CHARACTERISTICS · , -50383Rev. B, 21-Mar-05 www.vishay.com 1 SPICE Device Model Si3460DV Vishay Siliconix SPECIFICATIONS , -50383Rev. B, 21-Mar-05 SPICE Device Model Si3460DV Vishay Siliconix COMPARISON OF MODEL WITH MEASURED , the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline , , Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes


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PDF Si3460DV 18-Jul-08
2005 - DO1608C-102MLC

Abstract: 6TPB100MA low rds nfet sanyo 1 10SVPA68MAA GRM32ER61A226K LM1770 SI3460DV SI3867DV
Text: SI3460DV are chosen due to their desirable RDS(on) specifications, current handling capabilities and small , % Dale 1 Q1 SI3867DV PFET TSOP-6 SI3867DV Siliconix 1 Q2 SI3460DV NFET TSOP-6 SI3460DV Siliconix 1 © 2005 National Semiconductor Corporation AN201705 , LM1770 timing option allows for the 1.5 MHz switching frequency, and again the SI3867DV and SI3460DV FETs , Siliconix 1 Q2 SI3460DV NFET TSOP-6 SI3460DV Siliconix 1 RFB1 CRCW08051692


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PDF 242kHz LM1770 CSP-9-111S2) CSP-9-111S2. AN-1414 DO1608C-102MLC 6TPB100MA low rds nfet sanyo 1 10SVPA68MAA GRM32ER61A226K SI3460DV SI3867DV
2007 - SI3460DV

Abstract: No abstract text available
Text: Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on , 30 °C/W Unit Document Number: 71329 S-70314-Rev. C, 12-Feb-07 www.vishay.com 1 Si3460DV , listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C


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PDF Si3460DV Si3460DV-T1 Si3460DV-T1-E3 08-Apr-05
Si3460DV-T1-E3

Abstract: Si3460DV
Text: Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , Si3460DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , . Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions , absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL


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PDF Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 18-Jul-08
2008 - SI3460DV

Abstract: No abstract text available
Text: Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on , 30 °C/W Unit Document Number: 71329 S-70314-Rev. C, 12-Feb-07 www.vishay.com 1 Si3460DV , listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C


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PDF Si3460DV Si3460DV-T1 Si3460DV-T1-E3 18-Jul-08
Si3460DV-T1-E3

Abstract: Si3460BDV Si3460DV Si3460DV-T1 SI3460BDV-T1-E3
Text: Specification Comparison Vishay Siliconix Si3460BDV vs. Si3460DV Description: N-Channel, 20 V (D-S) MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3460BDV-T1-E3 , , unless otherwise noted Parameter Symbol Si3460BDV Si3460DV Drain-Source Voltage VDS 20 , Si3460BDV Power Dissipation Si3460DV PD W SPECIFICATIONS TJ = 25 °C, unless otherwise noted , Notes: a. VGS = 10 V for the Si3460DV Specification comparisons are supplied as a courtesy to


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PDF Si3460BDV Si3460DV Si3460BDV-T1-E3 Si3460DV-T1-E3 Si3460DV-T1 07-Dec-06
2006 - NSC03

Abstract: Resistor 511 Ohm vishay BAT54H C2012X5R1A225K LM2743 128KHZ SI3460DV equivalent
Text: Pulse P1169.153 11.3u H, 0.04 Ohms M1 Siliconix SI3460DV M2 Siliconix SI3460DV , the published specifications of other device manufacturers. While National does update this , of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. BANNED


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PDF LM2743 100khz 500kHz CSP-9-111S2) CSP-9-111S2. LM2743 NSC03 Resistor 511 Ohm vishay BAT54H C2012X5R1A225K 128KHZ SI3460DV equivalent
2012 - Not Available

Abstract: No abstract text available
Text: Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on , Si3460DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C


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PDF Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 11-Mar-11
2005 - TSOP-6 .54

Abstract: SI3460DV
Text: Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 6.8 6.3 5.7 rDS(on) (W) 0.027 @ VGS = 4.5 V 0.032 @ VGS = 2.5 V 0.038 @ VGS = 1.8 V , 1 Si3460DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter , Number: 71329 S-31725-Rev. b, 18-Aug-03 2 Si3460DV Vishay Siliconix TYPICAL CHARACTERISTICS (25 , -Aug-03 www.vishay.com 3 Si3460DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold


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PDF Si3460DV Si3460DV-T1 08-Apr-05 TSOP-6 .54
2006 - NSC03

Abstract: BAT54 C3216X7R1E225K LM2743
Text: Ohms M1 Siliconix SI3460DV M2 Siliconix SI3460DV R1 Dale CRCW080510R0FRT6 , using National's published specifications as well as the published specifications of other device , user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to


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PDF LM2743 600kHz CSP-9-111S2) CSP-9-111S2. LM2743 NSC03 BAT54 C3216X7R1E225K
2012 - Not Available

Abstract: No abstract text available
Text: Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on , Si3460DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C


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PDF Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Not Available

Abstract: No abstract text available
Text: Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -Apr-09 www.vishay.com 1 Si3460DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections , periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20


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PDF Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2004 - tdk q2

Abstract: dual tracking linear power supply Si7540DP Si3460DV Si3447BDV LTC3736EUF LTC3736 IHLP-2525CZ-01 CCIJ2MM-138GW 10uF CAPACITOR 0402
Text: 6.3V Q6 Si3460DV (Opt.) 3 3 1.8V ( 5A at 5Vin ) 2 24 Vout2 L2 1.5uH IHLP , Si3460DV (Opt.) 2 1 2 5 6 C7 10uF 6.3V E4 E8 Q2A Si7540DP 3 6 5 2 1 C6 , -2525CZ-01-1.5 VISHAY, Si7540DP POWERPAK SO-8 VISHAY, Si3447BDV TSOP-6 VISHAY, Si3460DV TSOP-6 AAC, CR05


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PDF LTC3736EUF 3736EUF 550kHz. applic18K 1/16W 04025C101MAT 04025C221MAT 04023C103MAT tdk q2 dual tracking linear power supply Si7540DP Si3460DV Si3447BDV LTC3736EUF LTC3736 IHLP-2525CZ-01 CCIJ2MM-138GW 10uF CAPACITOR 0402
LTC3736-1

Abstract: B320A IHLP-2525CZ-01 LTC3736EUF-1 Si3447BDV Si3460DV Si7540DP 803A 18 PIN mosfet 803
Text: C17 (Opt.) R6 5.9K 1% R7 59K 1% E3 Gnd 1 Q6 Si3460DV (Opt.) E5 E7 C21 , 24 Q5 Si3460DV (Opt.) PGOOD 23 2 7 8 10 Vout2 L2 1.5uH IHLP , POWERPAK SO-8 VISHAY, Si3447BDV TSOP-6 VISHAY, Si3460DV TSOP-6 AAC, CR05-100JM 0402 AAC, CR05


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PDF LTC3736EUF-1 3736EUF-1 300kHz 04025C101MAT 04025C221MAT 04025C471MAT 04025C222MAT EMK107SD103KA LMK107BJ105MA JMK316BJ106KL LTC3736-1 B320A IHLP-2525CZ-01 LTC3736EUF-1 Si3447BDV Si3460DV Si7540DP 803A 18 PIN mosfet 803
2006 - GRM21BR60J226ME39

Abstract: 6TPC68M CRCW06031002F CRCW06032102F LM1771 MSS7341-502NLB Si3460DV Si3867DV 20193301
Text: Siliconix Q2 NMOS Si3460DV 1 Siliconix Cin 22µF Capacitor, 0805 GRM21BR60J226ME39 , support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. BANNED SUBSTANCE


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PDF LM1771 2000ns LM1771U) 378kHz LM1771 CSP-9-111S2) AN-1477 GRM21BR60J226ME39 6TPC68M CRCW06031002F CRCW06032102F MSS7341-502NLB Si3460DV Si3867DV 20193301
2003 - Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
Text: SI3457BDV SI3457BDV SI3457BDV SI3457DV SI3458DV SI3459DV SI3460DV SI3460DV SI3460DV SI3471DV


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PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
2006 - VJ0805Y104KXXAT

Abstract: C307 transistor c317 25MV330WX C312 mosfet c309 C302 C306 C3-12 C310
Text: SI3460DV R300 Vishay CRCW08051002FRT6 10.0k Ohms R301 Vishay CRCW08051002FRT6 10.0k , specifications as well as the published specifications of other device manufacturers. While National does update , any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness


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PDF LM2651 LM2651 300kHz. CSP-9-111S2) CSP-9-111S2. VJ0805Y104KXXAT C307 transistor c317 25MV330WX C312 mosfet c309 C302 C306 C3-12 C310
2005 - LM1770

Abstract: LM1770UMF MSS7341-502NLB SI3460DV SI3867DV VJ0603Y103KXAAT 4TPC47M CRCW06032102F Synchronous Buck Switching Controller
Text: SI3460DV 1 Siliconix Q1 PMOS SI3867DV 1 Siliconix Cout 47µF Cap, 4V, 70mOhm, B , . A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect


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PDF LM1770 2000ns LM1770U) 378kHz. CSP-9-111S2) CSP-9-111S2. AN-1400 LM1770UMF MSS7341-502NLB SI3460DV SI3867DV VJ0603Y103KXAAT 4TPC47M CRCW06032102F Synchronous Buck Switching Controller
2008 - Xilinx analog comparator

Abstract: lm17 LM3880 Si3460DV Si3867DV LM1771 Si4394BDY mark HG LM3880-30ms LM388
Text: Si3460DV 22 nF EN GND 2.5 3.0 3.5 4.0 4.5 5.0 Icco (A) VIN Figure 4: I/O


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PDF AN-1677 III65nm LM1771 LM3880 LM1771 Virtex-50 2ms50 1ms100 Xilinx analog comparator lm17 LM3880 Si3460DV Si3867DV Si4394BDY mark HG LM3880-30ms LM388
2008 - irlm2502

Abstract: how mosfets connect parallel IRF3716 FDS6679 MBT50P03HDL an6048 Si2314EDS Si7445DP IRF6601 FDS6064N3
Text: over-specifying a device may make for an easy design, that design may not meet board-space or economic , incentive to select a device with as low a current rating as will work in an application. Unfortunately , the device . When the ispPAC-POWR1208 runs from a 3.3V supply, it can safely provide ~10V of gate , Finally, a small package would be nice, as this device is going to be taking up valuable board space next , above. Table 15-1. Example MOSFETs for use in Design Problem Model Manufacturer Si7858 Vishay


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PDF AN6048 -POWR1208 ispPAC-POWR1208 AN6043, 1-800-LATTICE ispPACPOWR1208" irlm2502 how mosfets connect parallel IRF3716 FDS6679 MBT50P03HDL an6048 Si2314EDS Si7445DP IRF6601 FDS6064N3
2009 - Si6466ADQ-T1-T3

Abstract: SI3460DV-T1-E3 6TPE470M CRCW04021102FRT6 Si3460DV LTC3872 TINY 13 MK325BJ MILL-MAX2501 DC989A
Text: ., X5R, 10uF, 10V, 10% 1206 DIODE, B320A-13 IND., 1.0uH N-Ch., 20-V, MOSFET, Si3460DV , TSSOP6 RES


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PDF DC989A LTC3872 LTC3872, DC989A DC6466ADQ-T1-T3, Si6466ADQ-T1-E3 Si4466DY 1/16W, CR05-5111FM Si6466ADQ-T1-T3 SI3460DV-T1-E3 6TPE470M CRCW04021102FRT6 Si3460DV LTC3872 TINY 13 MK325BJ MILL-MAX2501
2008 - FPGA programmable switch capacitor

Abstract: schematic diagram 12v ac regulator AN-1677 Si3460DV Si3867DV LM3880 SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A LM1771 AN1677 9424B
Text: Si3460DV 22 nF EN GND 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Icco (A


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PDF AN-1677 65-nm LM1771 LM3880 9424BDY LM1771U Si4394BDY FPGA programmable switch capacitor schematic diagram 12v ac regulator AN-1677 Si3460DV Si3867DV LM3880 SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A AN1677 9424B
sud*50n025-06p

Abstract: SI9120 SUD70N03-04P SI9119 Si7810DN sud*50n025-09p sum45n25 si9110 SI2301ADS SI4732CY
Text: up to date information, package and device function selector guides, data sheets, SPICE models, a , isolated. A few critical device specifications are provided and sorted by VDS, VGS, package and then rDS , single device . Combining greatly reduced switching losses with on-resistance, WFET Power MOSFETs , DPAK MOSFETs with a PowerPAK SO-8 device that's less than half as big (32.6 mm2 versus 70 mm2) and , supplier of this device type, with the best on-resistance and 10 times as many MOSFETs as any other


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PDF VSA-SG0019-0310 sud*50n025-06p SI9120 SUD70N03-04P SI9119 Si7810DN sud*50n025-09p sum45n25 si9110 SI2301ADS SI4732CY
2006 - Not Available

Abstract: No abstract text available
Text: Si3867DV 1 Siliconix Q2 NMOS Si3460DV 1 Siliconix Cin 22 µF Capacitor, 0805


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PDF SNVA163B AN-1477 LM1771
2006 - LTC2952 8 pin

Abstract: boost 5v to 48v Si4850 6TPE470M mbrb320 B320 LTC3872 heavy duty regulator Si3460DV ltc2952
Text: startup. IPRG GND CIN1 10µF L1: TOKOFDV0630-2R2 D1: MBR B320 M1: VISHAY SILICONIX Si3460DV


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PDF LTC3872 LTC2952 LTC2952 LTC2952 8 pin boost 5v to 48v Si4850 6TPE470M mbrb320 B320 LTC3872 heavy duty regulator Si3460DV
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