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Si3455DV SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si3455DV SPICE Device Model Si3455DV SPICE Device Model ECAD Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF

Si3455DV SPICE Device Model Datasheets Context Search

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Si3455DV

Abstract: No abstract text available
Text: SPICE Device Model Si3455DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET CHARACTERISTICS · , -50383Rev. B, 21-Mar-05 www.vishay.com 1 SPICE Device Model Si3455DV Vishay Siliconix SPECIFICATIONS , -50383Rev. B, 21-Mar-05 SPICE Device Model Si3455DV Vishay Siliconix COMPARISON OF MODEL WITH MEASURED , the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline , , Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes


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PDF Si3455DV 18-Jul-08
2005 - Not Available

Abstract: No abstract text available
Text: Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information , Si3455DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 , -50694-Rev. E, 18-Apr-05 www.vishay.com Symbol RthJA Limit 62.5 Unit _C/W 1 Si3455DV Vishay , Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of


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PDF Si3455DV Si3455DV-T1 Si3455DV-T1--E3 S-50694--Rev. 18-Apr-05
2008 - SI3455DV-T1

Abstract: Si3455DV
Text: Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information via the Worldwide , Si3455DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -Apr-05 www.vishay.com 1 Si3455DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED , . Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions


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PDF Si3455DV Si3455DV-T1 Si3455DV-T1--E3 18-Jul-08
2007 - Si3455DV

Abstract: Si3455DV-T1
Text: Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information via the Worldwide , Si3455DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -Apr-05 www.vishay.com 1 Si3455DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED , . Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions


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PDF Si3455DV Si3455DV-T1 Si3455DV-T1--E3 08-Apr-05
2000 - Not Available

Abstract: No abstract text available
Text: and Ordering Information Device Marking .455 Device Si3455DV Reel Size 7'' Tape width 8mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation Si3455DV Rev A (W) Si3455DV Electrical , Si3455DV April 2001 PRELIMINARY Si3455DV Single P-Channel Logic Level PowerTrench MOSFET , letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Si3455DV Rev A(W) Si3455DV , Diode Forward Voltage Variation with Source Current and Temperature. Si3455DV Rev A(W) Si3455DV


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PDF Si3455DV
2005 - Not Available

Abstract: No abstract text available
Text: guidelines. Check the validity by measuring the prototype or the actual device . Back-flow current L Coil , Si3454DV and Si3455DV is included. Refer to " Reference Data". Current flow in the parasitic diode is not , model . · If the input voltage is high and output current is low, pulses with a low duty ratio may be , PCB patterns, peripheral circuits and parts. Thoroughly evaluate the actual device when setting. When , 1.5 V Inductor CDRH104R/22 µH Transistor P-channel CPH6303 Si3441DV CPH6303 Si3441DV CPH6302 Si3455DV


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PDF S-8533
2002 - MA737

Abstract: 6 PIN case mos fet p-channel 34-s tsop-6 Pch FET S-8533A S-8533 CD105 seiko 320 240 8533 s-8533a39
Text: prototype or the actual device . Back-flow current VIN CIN + VIN PDRV NDRV L VOUT Coil , Si3454DV and Si3455DV is included. Refer to " Reference Data". Current flow in the parasitic diode is not , , fully check them using an actually mounted model . · If the input voltage is high and output current is , device when setting. When using parts other than those which are recommended, contact the SII marketing , IOUT 1.4 A, VIN 6 V CPH6302 CPH6402 IOUT 2 A, VIN 16 V (6) Si3455DV Si3454DV


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PDF S-8533 MA737 6 PIN case mos fet p-channel 34-s tsop-6 Pch FET S-8533A CD105 seiko 320 240 8533 s-8533a39
2001 - Si3455DV

Abstract: No abstract text available
Text: , Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .455 Si3455DV 7'' 8mm 3000 units 2001 Fairchild Semiconductor Corporation Si3455DV Rev A (W) Si3455DV April 2001 PRELIMINARY , Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This , < 2.0% Si3455DV Rev A(W) Si3455DV Electrical Characteristics Si3455DV Typical


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PDF Si3455DV
2003 - p-channel 7121

Abstract: Supersot 6 Si3455DV SI3455DV MARKING
Text: , Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .455 Si3455DV 7'' 8mm 3000 units 2003 Fairchild Semiconductor Corporation Si3455DV Rev A1 (W) Si3455DV April 2001 Symbol , Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This , < 2.0% Si3455DV Rev A1 (W) Si3455DV Electrical Characteristics Si3455DV Typical


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PDF Si3455DV p-channel 7121 Supersot 6 SI3455DV MARKING
2002 - S-8533A15AFT

Abstract: SI3441DV equivalent S-8533 S-8533A mos fet pch CPH6302 equivalent S8533
Text: , Si3455DV MOS FET MOS FET VIN IPK 13 S-8533 PWM Rev , CPH6303 CPH6403 Si3441DV Si3442DV CPH6303 CPH6403 Si3441DV Si3442DV CPH6302 CPH6402 Si3455DV Si3454DV CPH6302 CPH6402 Si3455DV Si3454DV CPH6303 CPH6403 Si3441DV Si3442DV CPH6303 CPH6403 Si3441DV Si3442DV CPH6302 CPH6402 47 F×2 47 F, 0.1 F Si3455DV Si3454DV CPH6302 CPH6402 Si3455DV , Si3455DV Si3454DV CPH6302 CPH6402 Si3455DV Si3454DV CPH6303 CPH6403 CPH6302 CPH6402 IOUT2


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PDF S-8533 S-8533 S-8533A FT008-E-C-SD-1 FT008-E-R-SD-1 S-8533A15AFT SI3441DV equivalent mos fet pch CPH6302 equivalent S8533
2007 - S-8533A30AFT-TB-G

Abstract: DRH104R seiko 320 240 S-8533 S-8533A S-8533A125FT-TB-G S-8533A13AFT-TB-G S-8533A14AFT-TB-G
Text: or the actual device . L Back-flow current VIN VIN PDRV NDRV + CIN Coil current , Si3454DV and Si3455DV is included. Refer to " Reference Data". Current flow in the parasitic diode is not , used, fully check them using an actually mounted model . · If the input voltage is high and output , device when setting. When using parts other than those which are recommended, contact the SII marketing , 6 V (5) CPH6302 CPH6402 IOUT 2 A, VIN 16 V Si3455DV Si3454DV IOUT 1.6 A, VIN


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PDF S-8533 S-8533A30AFT-TB-G DRH104R seiko 320 240 S-8533A S-8533A125FT-TB-G S-8533A13AFT-TB-G S-8533A14AFT-TB-G
2005 - Not Available

Abstract: No abstract text available
Text: guidelines. Check the validity by measuring the prototype or the actual device . Back-flow current L Coil , Si3454DV and Si3455DV is included. Refer to " Reference Data". Current flow in the parasitic diode is not , model . · If the input voltage is high and output current is low, pulses with a low duty ratio may be , PCB patterns, peripheral circuits and parts. Thoroughly evaluate the actual device when setting. When , 1.5 V Inductor CDRH104R/22 µH Transistor P-channel CPH6303 Si3441DV CPH6303 Si3441DV CPH6302 Si3455DV


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PDF S-8533
2005 - Not Available

Abstract: No abstract text available
Text: guidelines. Check the validity by measuring the prototype or the actual device . Back-flow current L Coil , Si3454DV and Si3455DV is included. Refer to " Reference Data". Current flow in the parasitic diode is not , model . · If the input voltage is high and output current is low, pulses with a low duty ratio may be , PCB patterns, peripheral circuits and parts. Thoroughly evaluate the actual device when setting. When , V Inductor CDRH104R/22 H Transistor P-channel CPH6303 Si3441DV CPH6303 Si3441DV CPH6302 Si3455DV


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PDF S-8533
2007 - Not Available

Abstract: No abstract text available
Text: measuring the prototype or the actual device . L Back-flow current VIN VIN PDRV NDRV + CIN , Electric Co., Ltd. CPH6302, CHP6402, and Vishay Siliconix Si3454DV and Si3455DV is included. Refer to â , and impedance of power supply used, fully check them using an actually mounted model . • If the , design of PCB patterns, peripheral circuits and parts. Thoroughly evaluate the actual device when , CPH6402 IOUT ≤ 2 A, VIN ≤ 16 V Si3455DV Si3454DV IOUT ≤ 1.6 A, VIN ≤ 16 V CPH6302


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PDF S-8533
2002 - Not Available

Abstract: No abstract text available
Text: guidelines. Check the validity by measuring the prototype or the actual device . Back-flow current L Coil , Si3454DV and Si3455DV is included. Refer to " Reference Data". Current flow in the parasitic diode is not , model . · If the input voltage is high and output current is low, pulses with a low duty ratio may be , PCB patterns, peripheral circuits and parts. Thoroughly evaluate the actual device when setting. When , -8533A15AFT Output Voltage 1.5 V Inductor Transistor P-channel CPH6303 Si3441DV CPH6303 Si3441DV CPH6302 Si3455DV


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PDF S-8533
2001 - 8532

Abstract: seiko 320 240 S-8532B15AFT-TB S-8532B15APA-TF S-8532B25APA-TF S-8532B30AFT-TB S-8532B30APA-TF S-8532B33AFT-TB sot-23-6 step-down REGULATOR
Text: -8532B15A 0.50 0.00 0 5 Figure 7 10 VIN(V) 15 20 lpeak change by input voltage (1.5V model , guidelines. Please check the validity by measuring the prototype or the actual device . 8 Seiko , , CHP6402, and Siliconix Si3454DV, Si3455DV . See "Reference Data". Current flow in the parasitic diode is , CPH6403 External Transistor ( Nch MOSFET) MA737 Si3455DV External Transistor (Pch MOSFET , -8532B33AFT Output current- Efficiency(CPH6302/CPH6402) Output current- Efficiency(Si3454DV/ Si3455DV ) 100


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PDF S-8532 300kHz. 8532 seiko 320 240 S-8532B15AFT-TB S-8532B15APA-TF S-8532B25APA-TF S-8532B30AFT-TB S-8532B30APA-TF S-8532B33AFT-TB sot-23-6 step-down REGULATOR
vth mos

Abstract: S-8532B15APA-TF mos fet tr CDRH22 S-8532B33AFT-TB S-8532B30APA-TF S-8532B30AFT-TB S-8532B25APA-TF S-8532B15AFT-TB PA008
Text: CPH6303,CPH6403,SiliconixSi3441DV,Si3442DV CPH6302,CPH6402,SiliconixSi3454DV, Si3455DV MOS , =-10V) , SOT-23-6 Si3441DV Vishay Siliconix Si3455DV CPH6403 CPH6402 Nch MOS , -8532B33AFT (Si3454DV/ Si3455DV ) 100 95 VIN =4.95V 90 85 80 10.0V 75 (%) 70 10.0V 65 60 16.0V , -8532B50AFT -(CPH6302/CPH6402) -(Si3454DV/ Si3455DV ) 100 100 95 95 VIN =6.0V VIN =6.0V 90 , 100 75 50 -(Si3454DV/ Si3455DV ) 90 -(Si3454DV/ Si3455DV ) 100 95 VIN =6.0V


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PDF S-8532 300kHz FT008-A) PA008-B) 125mV S-8532 vth mos S-8532B15APA-TF mos fet tr CDRH22 S-8532B33AFT-TB S-8532B30APA-TF S-8532B30AFT-TB S-8532B25APA-TF S-8532B15AFT-TB PA008
2002 - seiko 320 240

Abstract: S-8533 S-8533A tsop-6 Pch FET
Text: guidelines. Please check the validity by measuring the prototype or the actual device . Seiko Instruments , Sanyo Co., Ltd. CPH6302, CHP6402, and Vishay Siliconix Si3454DV, Si3455DV . See "Reference Data , Silliconix Inductor Diode Output Capacity External Transistor (Pch MOSFET) Si3455DV CPH6403 , (Si3454DV/ Si3455DV ) V IN = 6.0 V 16 V 1000 V IN = 4.95 V 1 10000 (7) S , / Si3455DV ) 60 55 50 Efficiency (%) 100 Output current (mA) 100 95 90 85 80 75 70 65


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PDF S-8533 seiko 320 240 S-8533A tsop-6 Pch FET
2001 - S-8532B33AFT-TB

Abstract: 34-s S-8532B30APA-TF S-8532B30AFT-TB S-8532B25APA-TF S-8532B15APA-TF S-8532B15AFT-TB seiko 320 240 CDRH124 8532
Text: 5 Figure 7 10 VIN(V) 15 20 lpeak change by input voltage (1.5V model ) PR 0 , the validity by measuring the prototype or the actual device . 8 Seiko Instruments Inc , Si3454DV, Si3455DV . See "Reference Data". Current flow in the parasitic diode is not allowed in some , Vishay Silliconix Si3455DV CPH6403 External Transistor ( Nch MOSFET) CPH6302 Si3441DV , Efficiency (%) 70 65 60 10 Output current - Efficiency(Si3454DV/ Si3455DV ) 7.5V 75


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PDF S-8532 300kHz. S-8532B33AFT-TB 34-s S-8532B30APA-TF S-8532B30AFT-TB S-8532B25APA-TF S-8532B15APA-TF S-8532B15AFT-TB seiko 320 240 CDRH124 8532
mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: recommended nearest and/or similar replacement part. Where the Industry device title and the Motorola Nearest , acceptability must be determined by the user as nearest or similar recommended device may differ in either , command in Acrobat Reader. Once the device has been found, obtain the data sheet by locating the part , SFR9110 SFW2955 SFW9Z14 SFW9Z24 SFW9Z34 Si3441DV Si3442DV Si3454DV Si3455DV Si4410DY SI4412DY


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PDF
2007 - HPA250A

Abstract: 5.6V DIODE ZENER CDRH-125-101 SLUU270 Vishay-Liteon HPA250 bq2000 DV2000S1 bq2000T BQ2000EVM
Text: to using this EVM for detailed information on the bq2000 or bq2000T device . 1.1 Device , Inductor, SMT, 100µH, 1.3A, 160m 0.472 sq CDRH125-101 Sumida Si3455DV MOSFET, Pch, ­30V, 2.3A, 190m Micro6 Si3455DV Vishay-Liteon Q2 MMBT3906 Bipolar, PNP, 40V, 200mA, 0.22W


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PDF SLUU270 bq2000EVM bq2000 bq2000T DV2000S1 bq2000/bq2000T bq2000" HPA250A 5.6V DIODE ZENER CDRH-125-101 SLUU270 Vishay-Liteon HPA250
2003 - Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
Text: SI3447DV SI3447DV SI3447DV SI3454ADV Si3454DV SI3455ADV SI3455ADV SI3455DV SI3456DV SI3456DV


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PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
1999 - IRF9310

Abstract: mosfet cross reference IRF 949 korea IRFZ44 replacement BUZ 36 philips master replacement guide IRF540 substitution 2SK2146 MOSFET TOSHIBA 2SK IRF510 substitution
Text: device title and the ON Semiconductor nearest titles are the same, that type number is the current ON , similar recommended device may differ in either electrical and/or mechanical characteristics. It is highly , Acrobat Reader. Once the device has been found, device specifications can be found in either the enclosed , Components Selector Guide (SG388/D). Full device data sheets can be obtained through LDC or the ON , Si3442DV Si3454DV Si3455DV Si4410DY SI4412DY SI4418DY SI4420DY si4425DY SI4431DY SI4435DY SI4920DY SI4925DY


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PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference IRF 949 korea IRFZ44 replacement BUZ 36 philips master replacement guide IRF540 substitution 2SK2146 MOSFET TOSHIBA 2SK IRF510 substitution
2001 - diode 8a 600v

Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
Text: ISL9R860S2 NDB6060 SI3441DV SI3442DV SI3443DV SI3445DV SI3446DV SI3447DV SI3455DV SI3457DV SI3948DV , Elimination of snubber circuit possible. · Improved device efficiency with improved lower reverse recovery , changes. Industry's First 20-Bit Configurable Bus Switch­a 4-, 5-, 8-, 10-, 16- or 20-Bit Device With


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PDF Power247TM, diode 8a 600v 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
2000 - 0805-x7r-0,1

Abstract: FDC654P OP12 Si2305DS Si3441DV Si3443DV Si3455DV TWL2203 TWL2203PFB
Text: complete power-management system for a cellular telephone that uses lithium-ion cells. The device includes , VG1 Ground for most sections of the device Ringer ground 31 Terminal for gain control of battery-charging current monitor Power supply to most of the device I External power supply input for , device is a part of the lithium-ion battery (Li-Ion) charging system of the phone. It is capable of , design flexibility. overvoltage shutdown The device shuts down the charging circuit in the presence of


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PDF TWL2203 SLVS185 48-pin 0805-x7r-0,1 FDC654P OP12 Si2305DS Si3441DV Si3443DV Si3455DV TWL2203 TWL2203PFB
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