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Si3441DV SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si3441DV SPICE Device Model Si3441DV SPICE Device Model ECAD Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF

Si3441DV SPICE Device Model Datasheets Context Search

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Si3441DV

Abstract: No abstract text available
Text: SPICE Device Model Si3441DV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS · , -50383Rev. B, 21-Mar-05 www.vishay.com 1 SPICE Device Model Si3441DV Vishay Siliconix SPECIFICATIONS , -50383Rev. B, 21-Mar-05 SPICE Device Model Si3441DV Vishay Siliconix COMPARISON OF MODEL WITH MEASURED , the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline , , Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes


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PDF Si3441DV 18-Jul-08
2009 - Si3441DV

Abstract: No abstract text available
Text: Notes a. Surface Mounted on FR4 Board. b. t v 5 sec For SPICE model information via the Worldwide Web , Si3441DV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W , -Apr-02 www.vishay.com 2-1 Si3441DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED , Document Number: 70191 S-20212-Rev. F, 01-Apr-02 Si3441DV Vishay Siliconix TYPICAL CHARACTERISTICS , Junction Temperature (_C) www.vishay.com 2-3 Si3441DV Vishay Siliconix TYPICAL CHARACTERISTICS


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PDF Si3441DV 18-Jul-08
2005 - Not Available

Abstract: No abstract text available
Text: Junction-to-Ambient to Ambienta Steady State Notes a. Surface Mounted on FR4 Board. b. t v 5 sec For SPICE model , Si3441DV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS , Si3441DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate , , 01-Apr-02 Si3441DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , S-20212-Rev. F, 01-Apr-02 www.vishay.com 2-3 Si3441DV Vishay Siliconix TYPICAL


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PDF Si3441DV 08-Apr-05
2008 - Si3441DV

Abstract: 20211
Text: Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v 5 sec For SPICE model information via , Si3441DV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b , -20211-Rev. G, 01-Apr-02 www.vishay.com 1 Si3441DV Vishay Siliconix SPECIFICATIONS (TJ = 25 , testing. www.vishay.com 2 Document Number: 71839 S-20211-Rev. G, 01-Apr-02 Si3441DV Vishay , 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si3441DV Vishay Siliconix TYPICAL


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PDF Si3441DV 18-Jul-08 20211
2005 - Not Available

Abstract: No abstract text available
Text: (Drain) Notes a. Surface Mounted on FR4 Board. b. t v 5 sec For SPICE model information via the Worldwide , Si3441DV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS , Unit _C/W 1 Si3441DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED , Number: 71839 S-20211-Rev. G, 01-Apr-02 Si3441DV Vishay Siliconix TYPICAL CHARACTERISTICS (25 , -Apr-02 www.vishay.com 3 Si3441DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain


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PDF Si3441DV 08-Apr-05
2001 - Si3441DV

Abstract: No abstract text available
Text: RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .441 Si3441DV 7'' 8mm 3000 units 2001 Fairchild Semiconductor Corporation Si3441DV Rev A (W) Si3441DV April 2001 PRELIMINARY , Si3441DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This , < 300µs, Duty Cycle < 2.0% Si3441DV Rev A (W) Si3441DV Electrical Characteristics Si3441DV


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PDF Si3441DV
2002 - MA737

Abstract: 6 PIN case mos fet p-channel 34-s tsop-6 Pch FET S-8533A S-8533 CD105 seiko 320 240 8533 s-8533a39
Text: prototype or the actual device . Back-flow current VIN CIN + VIN PDRV NDRV L VOUT Coil , . CPH6303, CPH6403, and Vishay Siliconix Si3441DV and Si3442DV for applications with an input voltage range , , fully check them using an actually mounted model . · If the input voltage is high and output current is , device when setting. When using parts other than those which are recommended, contact the SII marketing , Capacitor Capacitor Application Condition IOUT 2 A, VIN 8 V CPH6303 CPH6403 Si3441DV


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PDF S-8533 MA737 6 PIN case mos fet p-channel 34-s tsop-6 Pch FET S-8533A CD105 seiko 320 240 8533 s-8533a39
2000 - Not Available

Abstract: No abstract text available
Text: and Ordering Information Device Marking .441 Device Si3441DV Reel Size 7'' Tape width 8mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation Si3441DV Rev A (W) Si3441DV Electrical , Si3441DV April 2001 PRELIMINARY Si3441DV P-Channel 2.5V Specified PowerTrench MOSFET , letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Si3441DV Rev A (W) Si3441DV Typical Characteristics 15 -3.5V -ID, DRAIN CURRENT (A) 12 -2.5V RDS(ON), NORMALIZED


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PDF Si3441DV
2007 - Not Available

Abstract: No abstract text available
Text: measuring the prototype or the actual device . L Back-flow current VIN VIN PDRV NDRV + CIN , Si3441DV and Si3442DV for applications with an input voltage range of 6 to 8 V or less is included for , and impedance of power supply used, fully check them using an actually mounted model . • If the , design of PCB patterns, peripheral circuits and parts. Thoroughly evaluate the actual device when , CPH6303 CPH6403 Si3441DV Si3442DV IOUT ≤ 1.4 A, VIN ≤ 6 V CPH6303 CPH6403 IOUT â


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PDF S-8533
2005 - Not Available

Abstract: No abstract text available
Text: guidelines. Check the validity by measuring the prototype or the actual device . Back-flow current L Coil , . CPH6303, CPH6403, and Vishay Siliconix Si3441DV and Si3442DV for applications with an input voltage range , model . · If the input voltage is high and output current is low, pulses with a low duty ratio may be , PCB patterns, peripheral circuits and parts. Thoroughly evaluate the actual device when setting. When , 1.5 V Inductor CDRH104R/22 µH Transistor P-channel CPH6303 Si3441DV CPH6303 Si3441DV CPH6302 Si3455DV


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PDF S-8533
2007 - S-8533A30AFT-TB-G

Abstract: DRH104R seiko 320 240 S-8533 S-8533A S-8533A125FT-TB-G S-8533A13AFT-TB-G S-8533A14AFT-TB-G
Text: or the actual device . L Back-flow current VIN VIN PDRV NDRV + CIN Coil current , . CPH6303, CPH6403, and Vishay Siliconix Si3441DV and Si3442DV for applications with an input voltage range , used, fully check them using an actually mounted model . · If the input voltage is high and output , device when setting. When using parts other than those which are recommended, contact the SII marketing , Application Condition IOUT 2 A, VIN 8 V CPH6303 CPH6403 Si3441DV Si3442DV IOUT 1.4 A, VIN


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PDF S-8533 S-8533A30AFT-TB-G DRH104R seiko 320 240 S-8533A S-8533A125FT-TB-G S-8533A13AFT-TB-G S-8533A14AFT-TB-G
2005 - Not Available

Abstract: No abstract text available
Text: guidelines. Check the validity by measuring the prototype or the actual device . Back-flow current L Coil , . CPH6303, CPH6403, and Vishay Siliconix Si3441DV and Si3442DV for applications with an input voltage range , model . · If the input voltage is high and output current is low, pulses with a low duty ratio may be , PCB patterns, peripheral circuits and parts. Thoroughly evaluate the actual device when setting. When , 1.5 V Inductor CDRH104R/22 µH Transistor P-channel CPH6303 Si3441DV CPH6303 Si3441DV CPH6302 Si3455DV


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PDF S-8533
2005 - Not Available

Abstract: No abstract text available
Text: guidelines. Check the validity by measuring the prototype or the actual device . Back-flow current L Coil , . CPH6303, CPH6403, and Vishay Siliconix Si3441DV and Si3442DV for applications with an input voltage range , model . · If the input voltage is high and output current is low, pulses with a low duty ratio may be , PCB patterns, peripheral circuits and parts. Thoroughly evaluate the actual device when setting. When , V Inductor CDRH104R/22 H Transistor P-channel CPH6303 Si3441DV CPH6303 Si3441DV CPH6302 Si3455DV


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PDF S-8533
2002 - Not Available

Abstract: No abstract text available
Text: guidelines. Check the validity by measuring the prototype or the actual device . Back-flow current L Coil , . CPH6303, CPH6403, and Vishay Siliconix Si3441DV and Si3442DV for applications with an input voltage range , model . · If the input voltage is high and output current is low, pulses with a low duty ratio may be , PCB patterns, peripheral circuits and parts. Thoroughly evaluate the actual device when setting. When , -8533A15AFT Output Voltage 1.5 V Inductor Transistor P-channel CPH6303 Si3441DV CPH6303 Si3441DV CPH6302 Si3455DV


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PDF S-8533
2002 - S-8533A15AFT

Abstract: SI3441DV equivalent S-8533 S-8533A mos fet pch CPH6302 equivalent S8533
Text: , CPH6403, Vishay Siliconix Si3441DV , Si3442DV 6 ~ 8 V CPH6302, CPH6402, Vishay Siliconix Si3454DV , CPH6303 CPH6403 Si3441DV Si3442DV CPH6303 CPH6403 Si3441DV Si3442DV CPH6302 CPH6402 Si3455DV Si3454DV CPH6302 CPH6402 Si3455DV Si3454DV CPH6303 CPH6403 Si3441DV Si3442DV CPH6303 CPH6403 Si3441DV Si3442DV CPH6302 CPH6402 47 F×2 47 F, 0.1 F Si3455DV Si3454DV CPH6302 CPH6402 Si3455DV Si3454DV CPH6303 CPH6403 Si3441DV Si3442DV CPH6303 CPH6403 Si3441DV Si3442DV CPH6302 CPH6402


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PDF S-8533 S-8533 S-8533A FT008-E-C-SD-1 FT008-E-R-SD-1 S-8533A15AFT SI3441DV equivalent mos fet pch CPH6302 equivalent S8533
SI3441DV-T1

Abstract: Si3441DV TR55 SI3441BDV-T1-E3 Si3441BDV Si3441BDV-T1
Text: Specification Comparison Vishay Siliconix Si3441BDV vs. Si3441DV Description: P-Channel, 2.5 V (G-S) MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3441BDV-T1 Replaces Si3441DV-T1 Si3441BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3441DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si3441BDV Si3441DV Drain-Source Voltage , 70 °C 145 130 °C/W Si3441BDV Si3441DV PD W SPECIFICATIONS TJ = 25 °C, unless


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PDF Si3441BDV Si3441DV Si3441BDV-T1 Si3441DV-T1 Si3441BDV-T1-E3 06-Nov-06 TR55
vth mos

Abstract: S-8532B15APA-TF mos fet tr CDRH22 S-8532B33AFT-TB S-8532B30APA-TF S-8532B30AFT-TB S-8532B25APA-TF S-8532B15AFT-TB PA008
Text: =-10V) , SOT-23-6 Si3441DV Vishay Siliconix Si3455DV CPH6403 CPH6402 Nch MOS , .1.1 (1) S-8532B15AFT (2) S-8532B15AFT -(CPH6303/CPH6403) -( Si3441DV /Si3442DV) 100 100 , (CPH6303/CPH6403) -( Si3441DV /Si3442DV) 100 95 95 90 100 90 VIN =4.0V 85 , ) S-8532B15AFT -( Si3441DV /Si3442DV) -(CPH6303/CPH6403) 100 100 95 95 90 90 85 , 10000 1 10 (mA) 24 100 (mA) -( Si3441DV /Si3442DV) 100 90 10 (11) S


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PDF S-8532 300kHz FT008-A) PA008-B) 125mV S-8532 vth mos S-8532B15APA-TF mos fet tr CDRH22 S-8532B33AFT-TB S-8532B30APA-TF S-8532B30AFT-TB S-8532B25APA-TF S-8532B15AFT-TB PA008
2001 - 8532

Abstract: seiko 320 240 S-8532B15AFT-TB S-8532B15APA-TF S-8532B25APA-TF S-8532B30AFT-TB S-8532B30APA-TF S-8532B33AFT-TB sot-23-6 step-down REGULATOR
Text: -8532B15A 0.50 0.00 0 5 Figure 7 10 VIN(V) 15 20 lpeak change by input voltage (1.5V model , guidelines. Please check the validity by measuring the prototype or the actual device . 8 Seiko , less, data was obtained by using Sanyo CPH6303, CPH6403, and Siliconix Si3441DV , Si3442DV, and for , ) Si3441DV Output Capacity Manufacturer Sumida CPH6303 Diode Product Name CDRH127 CDRH124 , ( Si3441DV /Si3442DV) 100 100 95 95 90 90 VIN =2.7V 85 Efficiency (%) 80


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PDF S-8532 300kHz. 8532 seiko 320 240 S-8532B15AFT-TB S-8532B15APA-TF S-8532B25APA-TF S-8532B30AFT-TB S-8532B30APA-TF S-8532B33AFT-TB sot-23-6 step-down REGULATOR
2001 - S-8532B33AFT-TB

Abstract: 34-s S-8532B30APA-TF S-8532B30AFT-TB S-8532B25APA-TF S-8532B15APA-TF S-8532B15AFT-TB seiko 320 240 CDRH124 8532
Text: 5 Figure 7 10 VIN(V) 15 20 lpeak change by input voltage (1.5V model ) PR 0 , the validity by measuring the prototype or the actual device . 8 Seiko Instruments Inc , using Sanyo CPH6303, CPH6403, and Siliconix Si3441DV , Si3442DV, and for applications with an input , Vishay Silliconix Si3455DV CPH6403 External Transistor ( Nch MOSFET) CPH6302 Si3441DV , current- Efficiency( Si3441DV /Si3442DV) 100 100 95 95 90 90 VIN =2.7V 85 80


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PDF S-8532 300kHz. S-8532B33AFT-TB 34-s S-8532B30APA-TF S-8532B30AFT-TB S-8532B25APA-TF S-8532B15APA-TF S-8532B15AFT-TB seiko 320 240 CDRH124 8532
2002 - seiko 320 240

Abstract: S-8533 S-8533A tsop-6 Pch FET
Text: guidelines. Please check the validity by measuring the prototype or the actual device . Seiko Instruments , less, data was obtained by using Sanyo Co., Ltd. CPH6303, CPH6403, and Vishay Siliconix Si3441DV , Parts Sanyo Electric Co., Ltd CPH6302 Sanyo Electric Co., Ltd Si3441DV Vishay , current ( Si3441DV /Si3442DV) V IN = 4.0 V 4.95 V V IN = 2.7 V 1 Efficiency (% , -8533A15AFT Efficiency vs. Output current ( Si3441DV /Si3442DV) Efficiency (%) Efficiency (%) (1) S


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PDF S-8533 seiko 320 240 S-8533A tsop-6 Pch FET
2004 - MM74HC125M

Abstract: LP3947 AN-1341 MC14504B Si3441DV SOIC14 SOIC16 i2c software program
Text: ­5 Temic Si3441DV LDA14A NSC LP3947ISD SPC Tech National does not assume any responsibility for , significant injury to the user. 2. A critical component is any component of a life support device or , device or system, or to affect its safety or effectiveness. BANNED SUBSTANCE COMPLIANCE AN


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PDF LP3947 CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. MM74HC125M AN-1341 MC14504B Si3441DV SOIC14 SOIC16 i2c software program
FFMT718

Abstract: FMMT718 MAX1452 MAX1455 MAX1459 MAX1463 MAX1478 Si3441DV APP760
Text: Ron, logic level type. A Si3441DV device is shown, but any similar device can be substituted , device has been used for this duty. The FFMT718 is one of a family of devices that exhibit very low VCE , is produced across D1. Note that the zener diode D1, although a nominal 5.6V device , is being , special requirements of this device and almost any PNP device could be substituted. Reverse-Voltage , shown, the device 's body diode will automatically conduct when a power-supply voltage of greater than


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PDF com/an760 MAX1452: MAX1455: MAX1459: MAX1463: MAX1478: AN760, APP760, Appnote760, FFMT718 FMMT718 MAX1452 MAX1455 MAX1459 MAX1463 MAX1478 Si3441DV APP760
rca transistor

Abstract: MAX5021 AN967 rca power transistor ZHCS1000 Si5443DC Si3441DV MAX1898 FDC636P APP967
Text: . This application note discusses how to maximize charging current while maintaining safe device and , °C/W RCA= 126°C/W SuperSot-6 Vishay Siliconix Si3441DV 1 in_ pad of 2oz Cu on FR-4 board


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PDF MAX1898 900mA MAX5021 com/an967 MAX1898: MAX5021: AN967, APP967, Appnote967, rca transistor AN967 rca power transistor ZHCS1000 Si5443DC Si3441DV FDC636P APP967
ffmt718

Abstract: FMMT718 MAX1452 MAX1455 MAX1459 MAX1463 MAX1478 Si3441DV vehicle speed sensor current
Text: MOSFET are that it should be a low Ron, logic level type. A Si3441DV device is shown, but any similar , characteristics of this transistor. A Zetex FMMT718 device has been used for this duty. The FFMT718 is one of a , , although a nominal 5.6V device , is being operated at a very low reverse current, about 200uA as defined by , , although there are no special requirements of this device and almost any PNP device could be substituted , Figure 2. By configuring the MOSFET as shown, the device 's body diode will automatically conduct when a


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PDF com/an760 MAX1452: MAX1455: MAX1459: MAX1463: MAX1478: ffmt718 FMMT718 MAX1452 MAX1455 MAX1459 MAX1463 MAX1478 Si3441DV vehicle speed sensor current
mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: recommended nearest and/or similar replacement part. Where the Industry device title and the Motorola Nearest , acceptability must be determined by the user as nearest or similar recommended device may differ in either , command in Acrobat Reader. Once the device has been found, obtain the data sheet by locating the part , SFR9110 SFW2955 SFW9Z14 SFW9Z24 SFW9Z34 Si3441DV Si3442DV Si3454DV Si3455DV Si4410DY SI4412DY


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