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Si2303BDS SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si2303BDS SPICE Device Model Si2303BDS SPICE Device Model ECAD Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF

Si2303BDS SPICE Device Model Datasheets Context Search

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Si2303BDS

Abstract: No abstract text available
Text: SPICE Device Model Si2303BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET CHARACTERISTICS · , -50232Rev. B, 28-Feb-05 www.vishay.com 1 SPICE Device Model Si2303BDS Vishay Siliconix SPECIFICATIONS , Number: 70318 S-50232Rev. B, 28-Feb-05 SPICE Device Model Si2303BDS Vishay Siliconix COMPARISON OF , the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline , , Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes


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PDF Si2303BDS 18-Jul-08
2009 - Si2303BDS

Abstract: Si2303BDS-T1 Si2303BDS-T1-E3
Text: FR4 board, t 5 s. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide , Si2303BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on , S 2 3 D Top View Si2303BDS (L3)* * Marking Code Ordering Information: Si2303BDS-T1 , Si2303BDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Symbol , Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional


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PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 18-Jul-08
Si2303BDS

Abstract: Si2303BDS-T1 Si2303BDS-T1-E3
Text: FR4 board, t 5 s. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide , Si2303BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on , S 2 3 D Top View Si2303BDS (L3)* * Marking Code Ordering Information: Si2303BDS-T1 , Si2303BDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Symbol , Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional


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PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 08-Apr-05
2005 - Not Available

Abstract: No abstract text available
Text: Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the , Si2303BDS New Product Vishay Siliconix P-Channel, 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V , -23) G 1 3 D S 2 Top View Si2303BDS (L3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25 , -Nov-02 www.vishay.com RthJA Symbol Typical 120 140 Maximum 145 175 Unit _C/W 1 Si2303BDS Vishay , Turn-Off Time www.vishay.com 2 Document Number: 72065 S-21980-Rev. A, 04-Nov-02 Si2303BDS


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PDF Si2303BDS O-236 OT-23) 08-Apr-05
2006 - Si2303BDS

Abstract: Si2303BDS-T1
Text: FR4 Board, t v 5 sec. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide , Si2303BDS Vishay Siliconix P-Channel, 30-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A , -236 (SOT-23) G 1 S 2 3 D Top View Si2303BDS (L3)* *Marking Code Ordering , , exemptions may apply Document Number: 72065 S-52486-Rev. B, 12­Dec-05 www.vishay.com 1 Si2303BDS , www.vishay.com 2 Document Number: 72065 S-52486-Rev. B, 12­Dec-05 Si2303BDS Vishay Siliconix


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PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 08-Apr-05
Si2303BDS

Abstract: Si2303BDS-T1 Si2303BDS-T1-E3 L3 marking Si2303BDS SPICE Device Model
Text: FR4 board, t 5 s. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide , Si2303BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on , S 2 3 D Top View Si2303BDS (L3)* * Marking Code Ordering Information: Si2303BDS-T1 , Si2303BDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Symbol , Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional


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PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 11-Mar-11 L3 marking Si2303BDS SPICE Device Model
2012 - L3 MARKING CODE

Abstract: No abstract text available
Text: Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product , Si2303BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on , Si2303BDS (L3)* * Marking Code Ordering Information: Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free , Si2303BDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Static , damage to the device . These are stress ratings only, and functional operation of the device at these or


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PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC L3 MARKING CODE
Not Available

Abstract: No abstract text available
Text: temperature. b. Surface Mounted on FR4 board, t ≤ 5 s. c. Surface Mounted on FR4 board. For SPICE model , Si2303BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on , 1 S 2 3 D Top View Si2303BDS (L3)* * Marking Code Ordering Information , -Mar-08 www.vishay.com 1 Si2303BDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits , the device . These are stress ratings only, and functional operation of the device at these or any


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PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.
2011 - Not Available

Abstract: No abstract text available
Text: Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product , Si2303BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on , Si2303BDS (L3)* * Marking Code Ordering Information: Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free , Si2303BDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Static , damage to the device . These are stress ratings only, and functional operation of the device at these or


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PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 11-Mar-11
Si2303BDS

Abstract: Si2303BDS-T1 Si2303BDS-T1-E3 L3 MARKING CODE
Text: Si2303BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on , S 2 3 D Top View Si2303BDS (L3)* * Marking Code Ordering Information: Si2303BDS-T1 , compliant, exemptions may apply. 1 Si2303BDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless , . Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions


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PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 L3 MARKING CODE
2008 - Si2303BDS-T1-E3

Abstract: Si2303CDS-T1-E3 Si2303BDS Si2303CDS Si2303BDS-T1
Text: Specification Comparison Vishay Siliconix Si2303CDS vs. Si2303BDS Description: Package: Pin Out: P-Channel, 30-V (D-S) MOSFET SOT-23 Identical Part Number Replacements: Si2303CDS-T1-E3 replaces Si2303BDS-T1-E3 Si2303CDS-T1-E3 replaces Si2303BDS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted SYMBOL Si2303CDS Si2303BDS Drain-Source Voltage PARAMETER VDS - , Si2303CDS MIN. TYP. Si2303BDS MAX. MIN. - 3.0 TYP. - 1.0 MAX. UNIT Static


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PDF Si2303CDS Si2303BDS OT-23 Si2303CDS-T1-E3 Si2303BDS-T1-E3 Si2303BDS-T1 16-Apr-08
Si2303DS-T1

Abstract: Si2303DS Si2303BDS Si2303BDS-T1 Si2303BDS-T1-E3
Text: Specification Comparison Vishay Siliconix Si2303BDS vs. Si2303DS Description: P-Channel, 30 V (D-S) MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2303BDS-T1 Replaces Si2303DS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free version) Replaces Si2303DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si2303BDS Si2303DS Drain-Source Voltage , 70 °C 175 166 °C/W Si2303BDS Si2303DS PD W SPECIFICATIONS TJ = 25 °C, unless


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PDF Si2303BDS Si2303DS OT-23 Si2303BDS-T1 Si2303DS-T1 Si2303BDS-T1-E3 06-Nov-06
260pF

Abstract: Si2303ADS Si2303BDS Si2303BDS-T1 Si2303BDS-T1-E3
Text: Specification Comparison Vishay Siliconix Si2303BDS vs. Si2303ADS Description: P-Channel, 30 V (D-S) MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2303BDS-T1 Replaces Si2303ADS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free version) Replaces Si2303ADS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si2303BDS Si2303ADS Drain-Source Voltage , 70 °C 175 175 °C/W Si2303BDS Si2303ADS PD W SPECIFICATIONS TJ = 25 °C, unless


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PDF Si2303BDS Si2303ADS OT-23 Si2303BDS-T1 Si2303ADS-T1 Si2303BDS-T1-E3 06-Nov-06 260pF
2006 - NMOS-2

Abstract: PWM techniques UDK325BJ106MM NMOS2 A915AY-2ROM design ideas ZETEX GATE DRIVER led driver buck off time LT3477 ZLLS1000
Text: : SILICONIX SI2303BDS LED1 TO LED6: LUMILEDS LXHL-BW02 10µs/DIV Figure 3. Rising LED current for the , -2ROM) NMOS1, NMOS2: ZETEX 2N7002 PMOS: SILICONIX Si2303BDS LED1, LED2: LUMILEDS LXHL-BW02 Figure 5


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PDF 40nVP 100Hz 400mA/800mA, 25MHz 100Hz. 300mA LT3477 LMK316BJ335ML UDK325BJ106MM NMOS-2 PWM techniques UDK325BJ106MM NMOS2 A915AY-2ROM design ideas ZETEX GATE DRIVER led driver buck off time LT3477 ZLLS1000
2007 - 06035C103KAT2A

Abstract: transistor P18 FET E4 PNP SMD TRANSISTOR 1nF, 50V, AVX Corporation Cap X7R 1210 T4 LTC3706EGN pa1494.242 c86 sot23 TMK325BJ475KN CMPSH1-4
Text: Si2303BDS Vaux FS/IN- FB/IN+ LTC3725EMSE R79 68K D2 CMPSH1-4 100uH L1 R29 100K , -VOUT 4.7uF 10nF 10uF Vaux FS/IN- FB/IN+ 10uF C67 +VOUT 3 Q29 Si2303BDS , +Vin (to SLV) D1 2 IS+ U1 7.5 Q29 Si2303BDS -VOUT C85 0.1uF D2 CMPSH1 , (to SLV) J1-1 E2 E1 D1 CMPSH1-4 D24 2 1 IS+ L1 U1 Q29 Si2303BDS , C66 1.5nF C34 22uF -VOUT * C51,C69 * U1 * R76 3 Q29 Si2303BDS C85


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PDF 88A-C 6V-72VIN, LTC3725/LTC3706 88A-C LTC3725 LTC3706. DC888A-C DC888A 250kHz J1-10 06035C103KAT2A transistor P18 FET E4 PNP SMD TRANSISTOR 1nF, 50V, AVX Corporation Cap X7R 1210 T4 LTC3706EGN pa1494.242 c86 sot23 TMK325BJ475KN CMPSH1-4
Si9371

Abstract: Siliconix mosfet guide Si8901EDB power selector guide Si6875DQ Si6968ADQ vishay resistances guide Si6874EDQ Si6866BDQ Si1431DH
Text: pad drawings, SPICE models, reliability information, and part marking. Other web information includes , Single -30 20 Si2303BDS Single -30 Single Si1433DH Si1431DH Name Qg (nC , 0.26 Si2303BDS Single -30 20 0.2 0.38 1.4 4.3 0.9 Si2307BDS Single


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PDF Si9731 TSSOP-16 Si9371 Si9371 Siliconix mosfet guide Si8901EDB power selector guide Si6875DQ Si6968ADQ vishay resistances guide Si6874EDQ Si6866BDQ Si1431DH
2007 - nec 2501

Abstract: DIODE FS 604 CAP 10nF 200V 0603 CRCW12065R10 c86 sot23 transistor P18 FET 2501-2-00-80-00-00-07-0 LTC3725 AC Transformer 50A 100V KFH-032-6
Text: 2.2K R84 4 C85 0.1uF +VOUT Q29 Si2303BDS Vaux FS/IN- FB/IN+ LTC3725EMSE , + 10uF C67 +VOUT 3 Q29 Si2303BDS C51,C69 * 2 R29 100K * R76 * R84 3 , 1 U1 9.53 R76 +VOUT Q29 Si2303BDS C85 0.1uF D2 CMPSH1-4 100uH L1 , 9.53 R76 +VOUT Q29 Si2303BDS C85 0.1uF D2 CMPSH1-4 100uH L1 R29 100K 3 , Si2303BDS C85 0.1uF D2 CMPSH1-4 R108 100uH L1 2 R29 100K 3 * R84 4 100pF


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PDF 88A-A 6V-72VIN, LTC3725/LTC3706 88A-A LTC3725 LTC3706. DC888A-A DC888A 250kHz J1-10 nec 2501 DIODE FS 604 CAP 10nF 200V 0603 CRCW12065R10 c86 sot23 transistor P18 FET 2501-2-00-80-00-00-07-0 AC Transformer 50A 100V KFH-032-6
2003 - Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
Text: SI2301BDS SI2301BDS SI2301BDS SI2301DS SI2302ADS SI2302ADS SI2302ADS SI2302ADS SI2302DS SI2303BDS SI2303BDS SI2303DS SI2304DS SI2304DS SI2304DS SI2305DS SI2307DS SI2308DS Si2309DS SI2311DS


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PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
2007 - transistor P18 FET

Abstract: KFH-032-6 PA1954NL TEPSLV0J227M PA0955 c86 sot23 transistor SMD p16 PA1382 DC888A Q12-Q15
Text: U1 8.06 R76 1k R84 3 +VOUT C85 0.1uF Q29 Si2303BDS Vaux FS/IN- FB , +VOUT C51,C69 * U1 Q29 Si2303BDS 1.5nF * 2 R29 100K * R76 * R84 3 , Q29 Si2303BDS Vaux FS/IN- FB/IN+ LTC3725EMSE R79 68K D2 CMPSH1-4 100uH L1 , R29 100K U1 3 8.06 R76 1k R84 4 +VOUT C85 0.1uF Q29 Si2303BDS Vaux , 15nF 4.7nF C66 1.5nF C34 22uF -VOUT * C51,C69 * U1 * R76 Q29 Si2303BDS


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PDF 88A-B 6V-72VIN, LTC3725/LTC3706 88A-B LTC3725 LTC3706. DC888A-B DC888A 250kHz P1-10 transistor P18 FET KFH-032-6 PA1954NL TEPSLV0J227M PA0955 c86 sot23 transistor SMD p16 PA1382 Q12-Q15
2009 - LDR 90

Abstract: MLP44-16 Si2303BDS Si7456DP Si7848DP TSSOP-16 SiP11206
Text: APPLICATION CIRCUIT Vin+ Si2303BDS 36 V to 75 V 100 V/100 ms Vin- 4 5 6 7 8 BST VIN , Si2303BDS Si7456DP SiP11206 RDB Document Number: 69232 S-81795-Rev. C, 04 , mA °C mW °C/W Notes: a. Device mounted with all leads soldered or welded to PC board. b , "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the


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PDF SiP11206 18-Jul-08 LDR 90 MLP44-16 Si2303BDS Si7456DP Si7848DP TSSOP-16
Not Available

Abstract: No abstract text available
Text: network Base station • 1/8 and 1/4 bricks TYPICAL APPLICATION CIRCUIT Vin+ Si2303BDS 42 V to , Si2303BDS 3 VINDET Si7456DP 2 Si7456DP 1 www.vishay.com 1 SiP11205 Vishay , mA °C mW °C/W Notes: a. Device Mounted with all leads soldered or welded to PC board. b , “Absolute Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the


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PDF SiP11205 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Not Available

Abstract: No abstract text available
Text: + Si2303BDS 42 V to 55 V 100 V/100 ms Vin- 6 7 8 VCC LX COMP DL CS AGND RDB2 , 4 VIN Si2303BDS 3 VINDET Si7456DP 2 Si7456DP 1 www.vishay.com 1 , /W Notes: a. Device Mounted with all leads soldered or welded to PC board. b. Derate 25.6 mW/°C , Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections


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PDF SiP11205 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2008 - Not Available

Abstract: No abstract text available
Text: network Base station • 1/8 and 1/4 bricks TYPICAL APPLICATION CIRCUIT Vin+ Si2303BDS 42 V to , Si2303BDS 3 VINDET Si7456DP 2 Si7456DP 1 www.vishay.com 1 SiP11205 Vishay , mA °C mW °C/W Notes: a. Device Mounted with all leads soldered or welded to PC board. b , “Absolute Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the


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PDF SiP11205 08-Apr-05
2008 - MLP44-16

Abstract: Si2303BDS Si7456DP Si7848DP TSSOP-16 AC2630
Text: bricks TYPICAL APPLICATION CIRCUIT Vin+ Si2303BDS 42 V to 55 V 100 V/100 ms Vin- 7 8 , + Si7848DP 5 6 BST 10 9 Vo- Si7848DP 4 VIN Si2303BDS 3 VINDET Si7456DP , ) PowerPAK MLP44-16a, b 39 PowerPAK TSSOP-16a, c 38 mA °C mW °C/W Notes: a. Device Mounted , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute maximum rating conditions for extended periods may affect device reliability


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PDF SiP11205 18-Jul-08 MLP44-16 Si2303BDS Si7456DP Si7848DP TSSOP-16 AC2630
Not Available

Abstract: No abstract text available
Text: bricks TYPICAL APPLICATION CIRCUIT Vin+ Si2303BDS 36 V to 75 V 100 V/100 ms Vin- 4 5 6 , + Vo- 9 Si2303BDS Si7456DP SiP11206 RDB Document Number: 69232 S-81795-Rev. C, 04 , PowerPAK TSSOP-16a, c 38 mA °C mW °C/W Notes: a. Device mounted with all leads soldered or , beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions


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PDF SiP11206 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Supplyframe Tracking Pixel