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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1085CM-3.3 Linear Technology LT1085-Fixed - 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators; Package: DD PAK; Pins: 3; Temperature Range: 0°C to 70°C
LT1085CT-12 Linear Technology LT1085-Fixed - 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators; Package: TO-220; Pins: 3; Temperature Range: 0°C to 70°C
LT1085IT-12#PBF Linear Technology LT1085-Fixed - 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators; Package: TO-220; Pins: 3; Temperature Range: -40°C to 85°C
LT1085CT-3.3 Linear Technology LT1085-Fixed - 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators; Package: TO-220; Pins: 3; Temperature Range: 0°C to 70°C
LT1085CM-3.3#TR Linear Technology LT1085-Fixed - 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators; Package: DD PAK; Pins: 3; Temperature Range: 0°C to 70°C
LT1085CM-3.6 Linear Technology LT1085-Fixed - 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators; Package: DD PAK; Pins: 3; Temperature Range: 0°C to 70°C

Semiconductor laser Types Fixed wavelength Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - NX8570SD

Abstract: NX8570*55 5291 8-pin NX8570SC318-BA NX8570SC315-BA NX8570SC311-BA NX8570SC307-BA NX8570SC303-BA NX8570SA transistor NEC D 822 P
Text: LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode module with wavelength monitor , Series Table A: Part number for fixed wavelength product (1/3) Part Number Channel Frequency , Preliminary Data Sheet PL10135EJ01V0DS 5 NX8570 Series Table A: Part number for fixed wavelength , Series Table A: Part number for fixed wavelength product (3/3) Part Number Channel Frequency


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PDF NX8570 NX8570S× NX8570SD NX8570*55 5291 8-pin NX8570SC318-BA NX8570SC315-BA NX8570SC311-BA NX8570SC307-BA NX8570SC303-BA NX8570SA transistor NEC D 822 P
2002 - ba date sheet

Abstract: NX8571SA NX8571SC303-BA NX8571SC307-BA NX8571SC311-BA NX8571SC315-BA NX8571SC318-BA 10 gb laser diode
Text: LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode module with wavelength monitor , Series Table A: Part number for fixed wavelength product (1/3) Part Number Channel Frequency , Preliminary Data Sheet PL10136EJ01V0DS 5 NX8571 Series Table A: Part number for fixed wavelength , Series Table A: Part number for fixed wavelength product (3/3) Part Number Channel Frequency


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PDF NX8571 NX8571S× ba date sheet NX8571SA NX8571SC303-BA NX8571SC307-BA NX8571SC311-BA NX8571SC315-BA NX8571SC318-BA 10 gb laser diode
ZnSe

Abstract: TO8 socket
Text: EXPOSURE TO BEAM MAXIMUM OUTPUT PULSE DURATION WAVELENGTH CLASS 3B LASER PRODUCT IEC 60825-1:2007 , WAVELENGTH (µm) EMISSION WAVENUMBER K (cm-1) GL12014-2231T-C Condition Ifp fixed Parameter , Typical value Ifp fixed -0.08 cm-1/°C CLASS 3R LASER Invisible Laser Radiation: Avoid Direct , countermeasures. INVISIBLE LASER RADIATION AVOID DIRECT EYE EXPOSURE MAXIMUM OUTPUT PULSE DURATION WAVELENGTH , Quantum Cascade Laser Front: QCLs Back: Set-up examples with exclusive accessories Quantum


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PDF SE-164 LQCL2001E04 ZnSe TO8 socket
2000 - 500mW 808nm infrared laser diode driver circuit

Abstract: LM358 laser driver SLD323 blue CD laser pickup assembly 2SK405 equivalent 808nm 1W laser diode Laser diode lm358 laser Semicondutor fiber optic DVD optical pick-up assembly lm358 laser current driver
Text: LASER DI O D E G SONY SEMICONDUCTOR ation U I D E Notes · Responsibility , voltage for semiconductor laser or photo diode is exceeded. Temperature limit given for case or , voltage at specified output. Peak oscillation wavelength for operation of laser diode at rated optical , the living body vary with laser light wavelength , output, output waveform (continuous or pulsed waves , thermal action. ii) Visible laser around 430nm in wavelength (absorbed by the retinal pigment of retinal


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PDF than-60dB. 500mW 808nm infrared laser diode driver circuit LM358 laser driver SLD323 blue CD laser pickup assembly 2SK405 equivalent 808nm 1W laser diode Laser diode lm358 laser Semicondutor fiber optic DVD optical pick-up assembly lm358 laser current driver
TOSA DWDM

Abstract: TEC TOSA transistor NEC D 587 PX10160E NX8530NH dwdm tosa
Text: INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam SEMICONDUCTOR LASER AVOID EXPOSURE-Invisible Laser , CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant , DATA SHEET LASER DIODE NX8530NH,NX8531NH 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb , are 1 550 nm Multiple Quantum Wells (MQW) structured Distributed Feed-Back (DFB) laser diode module


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PDF NX8530NH NX8531NH NX8531NH NX8530NH) NX8531NH) TOSA DWDM TEC TOSA transistor NEC D 587 PX10160E dwdm tosa
2011 - TRACETone

Abstract: Oclaro TL7000ZCD ASP-113466-019 optical modulator driver for Mach-Zehnder module tunable transmitter assembly Oclaro TL7000ZCD tl700 ASP-113466 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM
Text: fixed temperature. Wavelength stability is guaranteed by an internal wavelength locker for control to a , CLASS 1M LASER PRODUCT Maximum Power 5.25 mW / +7.2dBm Wavelength 1525 ­ 1565 nm REFERENCE IEC 60825-1 Edition 2.0 MAX POWER 5.25 mW / +7.2dBm WAVELENGTH > 1525 nm CLASS IIIb LASER PRODUCT THIS PRODUCT , Narrow line-width Excellent SMSR Low RIN over full power range Wavelength stabilized for 50GHz or 100GHz , Tunable Transmitter Assembly (TTA) is a high performance continuous wave (CW) tunable laser source


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PDF 10Gb/s TL7000NCD TL7000ZCD 50GHz 100GHz 21CFR D00144-PB TRACETone Oclaro ASP-113466-019 optical modulator driver for Mach-Zehnder module tunable transmitter assembly Oclaro TL7000ZCD tl700 ASP-113466 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM
CD laser pickup assembly

Abstract: laser diode symbol schematic ir3c09 DVD pickup assembly DVD laser pickup assembly DVD optical pick-up assembly schematic diagram tv sharp IR3C08 RVK POWER FACTOR CONTROLLER 780nm 500mW Laser Diode for dvd
Text: wavelength of the red semiconductor laser depends on the active layer band gap and thus can be varied from , Numbering System s New Numbering System of Laser Diodes GH 0 65 07 A 2 A Semiconductor laser diode Category (0 : Laser diode, 1 : Frame laser , 2 : Dual wavelength laser ) Wavelength (63 , 1 05 D 3 A Semiconductor laser diode Category (5, 6, 7 : Hologram laser ) Application (C : CD , emission. The term " LASER DIODE" denotes a device which uses a semiconductor p-n junction in a LASER


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PDF 635nm 650nm 780nm 120mA CD laser pickup assembly laser diode symbol schematic ir3c09 DVD pickup assembly DVD laser pickup assembly DVD optical pick-up assembly schematic diagram tv sharp IR3C08 RVK POWER FACTOR CONTROLLER 780nm 500mW Laser Diode for dvd
1999 - Hamamatsu streak c4334

Abstract: C5094 C1808-03 C4334-01 C4334 C4792 A5760 C4792-01 fluorescence optically pumped semiconductor laser
Text: Excitation light source: Laser diode, 410 nm · Fluorescence wavelength : 465 to 475 nm · 1 = 4.25 ns £ , nm · Fluorescence wavelength : 800 to 820 nm · 1 = 391 ps · 2 = 3.469 ns Semiconductor , wafer · Excitation light source: Laser diode, 670 nm · Fluorescence wavelength : 850 to 890 nm · 1 = , Laser-Pumped Dye Laser Laser wavelength Output pulse width Repetition rate Energy per pulse LN203S2 337 , a large amount of trigger jitter, such as nitrogen lasers. Type Laser wavelength * Output pulse


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PDF C4780 lig8152-375-0, SE-171-41 SSCS1018E06 MAY/99 Hamamatsu streak c4334 C5094 C1808-03 C4334-01 C4334 C4792 A5760 C4792-01 fluorescence optically pumped semiconductor laser
2008 - Not Available

Abstract: No abstract text available
Text: PRODUCT SEMICONDUCTOR LASER DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT AVOID EXPOSURE-Invisible Laser Radiation is , CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant , LASER DIODE NX5330SA 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode


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PDF NX5330SA NX5330SA PL10699EJ01V0DS
2008 - Not Available

Abstract: No abstract text available
Text: PRODUCT SEMICONDUCTOR LASER DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT AVOID EXPOSURE-Invisible Laser Radiation is , CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant , LASER DIODE NX5530SA 1 550 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5530SA is a 1 550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode


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PDF NX5530SA NX5530SA PL10700EJ01V0DS
Z500

Abstract: No abstract text available
Text: source Visible-light semiconductor laser Visible-light semiconductor laser (See note 10) ( Wavelength 658 nm, 15 mW max., Class 3B) ( Wavelength 650 nm, 1 mW max., Class 2) Beam dimensions (See , meet a variety of application needs. Detected image Laser Projector lens SW-CCD Receiver , construction cost Higher measurement accuracy Shorter measurement time Four types of monitor screens Measurement data can be displayed on 4 types of monitor screens. These screens enable analysis and evaluation


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PDF F502-EN2-04 Z500-MC10E/MC15E Z300-KP Q02E-EN-02 Z500
CLASS II LASER EN60825-1

Abstract: laser Displacement linear ccd F150-M05L Z500 F150-VM displacement sensor for 0 to 50 mm Z500-SW6 laser projector laser sensor accuracy omron liquid level sensor
Text: semiconductor laser (See note 10) Visible-light semiconductor laser ( Wavelength 650 nm, ( Wavelength 658 nm , objects in a stable manner, the Z500 can meet a variety of application needs. Detected image Laser , accuracy Shorter measurement time Four types of monitor screens Measurement data can be displayed on 4 types of monitor screens. These screens enable analysis and evaluation of measurement data from various , ( LASER indicator) Temperature characteristic (See note 9) Degree of protection Ambient operating


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PDF Z500-MC10E/MC15E Z300-KP CLASS II LASER EN60825-1 laser Displacement linear ccd F150-M05L Z500 F150-VM displacement sensor for 0 to 50 mm Z500-SW6 laser projector laser sensor accuracy omron liquid level sensor
2006 - NX6311EH-AZ

Abstract: NX6311EH PX10160E
Text: INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam , Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser , LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL , Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION · 4 G fiber channel FEATURES ·


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PDF NX6311EH NX6311EH PL10631EJ01V0DS NX6311EH-AZ PX10160E
ic 555 use with metal detector

Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
Text: — 10-34 J·s). Laser light is coherent light with uniform direction of travel, wavelength , and phase , visible light. Wavelength Grouping electromagnetic waves into spectral bands by wavelength shows a , energy E of one photon at a wavelength λ is expressed by equation (1). E = h ν = h c / λ [J , vacuum (2.998 × 108 m/s) λ: wavelength [m] If the unit of photon energy (E) is in eV and the unit of wavelength (λ) is in µm, the energy of the photon is also expressed as shown in equation (2).


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2006 - Not Available

Abstract: No abstract text available
Text: MAX WAVELENGTH nm CLASS lllb LASER PRODUCT SEMICONDUCTOR LASER AVOID EXPOSURE-Invisible Laser , with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed , PRELIMINARY DATA SHEET NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION LASER DIODE Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD , TC = 25°C 5 3 Differential Efficiency Peak Emission Wavelength Side Mode Suppression Ratio Rise Time


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PDF NX6411GH NX6411GH
2002 - C8188

Abstract: C8188-01 C8188 -2 c1097 optical pickup optical pickup unit fiber delay line digital delay generator waveform variable time delay with connector A8685
Text: of a semiconductor laser and the transmission characteristics of an optical fiber ! Features q , /div, Horizontal: 50 MHz/div) Temporal response characteristics of semiconductor laser This system , circuit of a semiconductor laser to measure the light of the laser . Driver circuit v Pulse response analysis of visible semiconductor laser for optical pickup: 1 ns/div, 400 MHz repetition Semiconductor , semiconductor laser : 2 ns/div Optional q Optical fiber connector: A8683 q All mode exciter for optical


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PDF C8188 C8188 C8188-01, C8188-03) SE-171-41 SSCS1051E04 MAR/2002 C8188-01 C8188 -2 c1097 optical pickup optical pickup unit fiber delay line digital delay generator waveform variable time delay with connector A8685
2006 - FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q nir emitter leds with 700 to 900 nm Si apd photodiode SPCM-AQR C30950E
Text: initiated ordnance. Pulsed Laser Diodes - Specialty Products These devices range in wavelength from 850 , performance semiconductor emitters and detectors and their associated electronic circuits and subsystems for advanced applications such as industrial, medical, scientific instrumentation, test equipment, laser range , , Inc. table of contents Emitters Surface Emitting LEDs 2 High Energy QCW Laser Diodes 980nm 2 Pulsed Laser Diodes (Specialty) 2 Pulsed Laser Diodes 850nm PFA Series 3 Pulsed


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PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q nir emitter leds with 700 to 900 nm Si apd photodiode SPCM-AQR C30950E
NX6311EH

Abstract: NX6311EH-AZ PX10160E
Text: INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam , : Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products , LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL , Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION · 4 G fiber channel FEATURES ·


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PDF NX6311EH NX6311EH PL10631EJ02V0DS NX6311EH-AZ PX10160E
2007 - Not Available

Abstract: No abstract text available
Text: Sheet PL10661EJ01V0DS 7 NX7363JB-BC SAFETY INFORMATION ON THIS PRODUCT SEMICONDUCTOR LASER DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS , LASER DIODE NX7363JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NX7363JB-BC is a 1 310 nm Multiple Quantum Well (MQW) structure pulsed laser diode DIP module , measurement equipment (OTDR). FEATURES · High output power · Long wavelength Pf = 150 mW MIN. @ IFP = 1


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PDF NX7363JB-BC NX7363JB-BC 14-pin PL10661EJ01V0DS
2007 - Not Available

Abstract: No abstract text available
Text: Sheet PL10662EJ01V0DS 7 NX7563JB-BC SAFETY INFORMATION ON THIS PRODUCT SEMICONDUCTOR LASER DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS , LASER DIODE NX7563JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION The NX7563JB-BC is a 1 550 nm Multiple Quantum Well (MQW) structure pulsed laser diode DIP module , measurement equipment (OTDR). FEATURES · High output power · Long wavelength Pf = 135 mW MIN. @ IFP = 1


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PDF NX7563JB-BC NX7563JB-BC 14-pin PL10662EJ01V0DS
2008 - Not Available

Abstract: No abstract text available
Text: LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT SEMICONDUCTOR LASER AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture Warning , semiconductor and laser products detailed below are compliant with the requirements of European Union (EU , LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION , ) laser diode with InGaAs monitor PIN-PD. APPLICATION · 1.25 Gb/s FTTH PON (Fiber To The Home Passive


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PDF NX6308GH NX6308GH PL10692EJ01V0DS
2004 - etalon locker

Abstract: AN0136 Semiconductor laser Types Fixed wavelength bookham laser bookham MZ modulator bookham receiver etalon wavelength locker high speed VOA Integrated Modulator and Driver Module
Text: maintains the laser submount temperature constant over life and then controls the laser wavelength by , EXPOSURE TO BEAM MAX POWER +13dBm WAVELENGTH > 1525 nm CLASS IIIb LASER PRODUCT THIS PRODUCT COMPLIES WITH , Dec 2004 - Issue C 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEG Negative Chirp - , (MQW) DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10 Gb/s high performance regional metro and long haul DWDM systems. By copackaging the laser , locker


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PDF 10Gb/s LMC10NEG LMC10NEG 14-pin, LMC10 TL9000 ISO9001 FM15040 ISO14001 EMS35100 etalon locker AN0136 Semiconductor laser Types Fixed wavelength bookham laser bookham MZ modulator bookham receiver etalon wavelength locker high speed VOA Integrated Modulator and Driver Module
2008 - Not Available

Abstract: No abstract text available
Text: LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT SEMICONDUCTOR LASER AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture Warning , semiconductor and laser products detailed below are compliant with the requirements of European Union (EU , LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION , ) laser diode with InGaAs monitor PIN-PD. APPLICATION · 1.25 Gb/s FTTH PON (Fiber To The Home Passive


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PDF NX6309GH NX6309GH PL10693EJ01V0DS
2007 - nm1680

Abstract: No abstract text available
Text: INFORMATION ON THIS PRODUCT SEMICONDUCTOR LASER DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT AVOID EXPOSURE-Invisible Laser , Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are , LASER DIODE NX7663JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7663JB-BC is a 1 625 nm Multiple Quantum Well (MQW) structure pulsed laser diode DIP module


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PDF NX7663JB-BC NX7663JB-BC 14-pin PL10663EJ01V0DS nm1680
NX5320EH

Abstract: NX5320EH-AZ PX10160E
Text: INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam , : Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products , LASER DIODE NX5320EH 1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX5320EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode


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PDF NX5320EH NX5320EH PL10660EJ01V0DS NX5320EH-AZ PX10160E
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