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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT3462AES6#TRM Linear Technology LT3462 - Inverting 1.2MHz/2.7MHz DC/DC Converters with Integrated Schottky in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LT3465ES6#TRM Linear Technology LT3465 - 1.2MHz White LED Step-Up Converters with Built-In Schottky in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LT3462ES6#TRMPBF Linear Technology LT3462 - Inverting 1.2MHz/2.7MHz DC/DC Converters with Integrated Schottky in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LT3465ES6#TRMPBF Linear Technology LT3465 - 1.2MHz White LED Step-Up Converters with Built-In Schottky in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LT3461ES6 Linear Technology LT3461 - 1.3MHz Step-Up DC/DC Converters with Integrated Schottky in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LT3465AES6 Linear Technology LT3465 - 1.2MHz White LED Step-Up Converters with Built-In Schottky in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C

Schottky barrier sot-23 Marking s4 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - 1PS10SB63

Abstract: MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW 1PS10SB63 Schottky barrier diode , Schottky barrier diode encapsulated in a SOD882 leadless ultra small plastic package. · Low forward , MDB391 · High frequency detection · Zero bias detection Marking code: S4 . The marking bar , Philips Semiconductors Product specification Schottky barrier diode 1PS10SB63 ELECTRICAL , VALUE UNIT 500 K/W Philips Semiconductors Product specification Schottky barrier


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PDF M3D891 1PS10SB63 OD882 MDB391 SCA75 613514/01/pp7 1PS10SB63 MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4
2005 - Schottky barrier sot-23 Marking s4

Abstract: No abstract text available
Text: SCS491D / SCS490D VOLTAGE 20V ~ 40V SC-59 Types Elektronische Bauelemente 1.0 Amp Surface Mount Schottky Barrier Rectifiers A suffix of "-C" specifies halogen & lead-free A FEATURES SC , Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES ( SCS491D / SCS490D ) F IG.1-TYPICAL F , CATHODE ANODE CATHODE ANODE SCS491D Marking : 10T SCS490D Marking : 10F MAXIMUM RATINGS , ) CHARACTERISTICS 91 D 10 SC S4 90 D SC S4 INSTANTANEOUS FORWAR DCUR R E NT,(A) 50


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PDF SCS491D SCS490D SC-59 SC-59 OT-346 SC-59) MIL-STD-202, 300us 01-Jun-2002 Schottky barrier sot-23 Marking s4
2001 - Not Available

Abstract: No abstract text available
Text: SCS400D / SCS411D VOLTAGE 20V ~ 40V SC-59 Types 0.5AMP Surface Mount Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES , ~ 40V SC-59 Types 0.5AMP Surface Mount Schottky Barrier Rectifiers Elektronische Bauelemente , ATHODE SCS411D Marking : 05T 2 ANODE SCS400D Marking : 05F MAXIMUM RATINGS AND ELECTRICAL , CURRENT DERATING CURVE CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) 00 S4 0.5 D SC S4


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PDF SCS400D SCS411D SC-59 SC-59 OT-346, 300us 01-Jun-2002
2004 - 915 MHz RFID

Abstract: marking code e6 sot363 Marking Code ABC HSMS-285x SCHOTTKY DIODE SOT-143 marking code tc sot 363 HSMS285B HSMS-285C 285L AN1124
Text: appropriate package marking . 2 SINGLE 3 * For more information see the Surface Mount Schottky , . The HSMS-285x zero bias diode is not designed for large signal designs. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor , barrier diodes. The Height of the Schottky Barrier The current-voltage characteristic of a Schottky , CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP current, IS, and is related to the barrier height of the diode


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PDF HSMS-285x OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 C70-3 OT-363 SC70-6 915 MHz RFID marking code e6 sot363 Marking Code ABC SCHOTTKY DIODE SOT-143 marking code tc sot 363 HSMS285B HSMS-285C 285L AN1124
2005 - HSMS-285x model

Abstract: P5 SOT-323 Marking Code m sc70-6 HSMS-286* reliability HSMS-285x spice model
Text: Surface Mount SOT- 23 / SOT-143 Packages Description Agilent's HSMS-285x family of zero bias Schottky , more information see the Surface Mount Schottky Reliability Data Sheet. Notes: 1. Package marking , SOT- 23 /SOT-143 DC Electrical Specifications, TC = +25°C, Single Diode Part Package Number Marking , diode is not designed for large signal designs. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of a


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PDF HSMS-285x OT-23/ OT-143 HSMS-282x HSMS-286x configurat25 5989-0479EN 5989-2494EN HSMS-285x model P5 SOT-323 Marking Code m sc70-6 HSMS-286* reliability HSMS-285x spice model
2005 - METAL DETECTOR circuit for make

Abstract: Microwave detector diodes SCHOTTKY DIODE SOT-143 915 MHz RFID Microwave detector diodes 18 GHz Microwave PIN diode spice HSMS-285x marking code nt rf detector diode diode MARKING A1
Text: . Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists , to as much as 5 µA for very low barrier diodes. The Height of the Schottky Barrier The current-voltage characteristic of a Schottky barrier diode at room temperature is described by the following , the characteristics of a Schottky diode. Barrier height will be altered, and at the same time CJ and , N-TYPE OR P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP current, IS, and


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PDF HSMS-285x OT-23/ OT-143 HSMS-282x HSMS-286x OT-363 SC70-6 5989-2494EN 5989-4022EN METAL DETECTOR circuit for make Microwave detector diodes SCHOTTKY DIODE SOT-143 915 MHz RFID Microwave detector diodes 18 GHz Microwave PIN diode spice marking code nt rf detector diode diode MARKING A1
2005 - HSMS-285x model

Abstract: ZERO Bias diode marking code e1 DIODE microstrip RFID tag agilent model marking code marking code e6 sot363 HSMS-285C
Text: Mount Schottky Reliability Data Sheet. SOT- 23 /SOT-143 Package Lead Code Identification (top view , Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a , . The Height of the Schottky Barrier The current-voltage characteristic of a Schottky barrier diode at , silicon, and the selection of metal, one can tailor the characteristics of a Schottky diode. Barrier , ( ) LP EQUIVALENT CIRCUIT RV RS Cj CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP Figure 5


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PDF HSMS-285x OT-23/ OT-143 OT-323 OT-363 OT-23/SOT-143 5989-0479EN 5989-2494EN HSMS-285x model ZERO Bias diode marking code e1 DIODE microstrip RFID tag agilent model marking code marking code e6 sot363 HSMS-285C
2000 - 282P

Abstract: variable power divider HSMS-282K HSMS-282x Series 2-82K NN SOT-143 hsms2822 schottky diode limiter application note sot-23 DIODE marking code D3 marking code c2 diode
Text: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-282x Series Features · Low , " for appropriate package marking . Unit SOT- 23 /SOT-143 SOT-323/SOT-363 Forward Current (1 µs , Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists , Height of the Schottky Barrier The current-voltage characteristic of a Schottky barrier diode at room , the HSMS-280x family of diodes. Turn to the HSMS-281x when you CROSS-SECTION OF SCHOTTKY BARRIER


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PDF HSMS-282x OT-363 HSMS-282K OT-23/SOT-143 5968-2356E, 5968-5934E 5968-8014E 282P variable power divider HSMS-282x Series 2-82K NN SOT-143 hsms2822 schottky diode limiter application note sot-23 DIODE marking code D3 marking code c2 diode
2006 - SCHOTTKY DIODE SOT-143

Abstract: METAL DETECTOR circuit for make AN1124 HSMS-285x diode schottky code 10 marking code nt diode MARKING A1 chip diode 047 "application note" antenna esd diode a2
Text: Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a , for very low barrier diodes. The Height of the Schottky Barrier The current-voltage characteristic of a Schottky barrier diode at room temperature is described by the following equation: V - IRS I , selection of metal, one can tailor the characteristics of a Schottky diode. Barrier height will be altered , SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT Figure 5


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PDF HSMS-285x OT-23/SOT-143 HSMS-282x HSMS-286x OT-323 SC70-3 OT-363 SC70-6 SCHOTTKY DIODE SOT-143 METAL DETECTOR circuit for make AN1124 diode schottky code 10 marking code nt diode MARKING A1 chip diode 047 "application note" antenna esd diode a2
2005 - S11 SCHOTTKY diode

Abstract: AV02-1377EN zero bias diode HSMS-285x HSMS-285C 285L AVAGO DATE CODE MARKING AN1124 all silicon metal rectifier diode product List A004R
Text: " for appropriate package marking . SOT- 23 /SOT-143 Package Lead Code Identification (top view) SINGLE , -5 R j = 8.33 X 10 n T = RV­ Rs The HeightIof+ I b Schottky Barrier the S Applications , used. The HSMS-285x zero bias diode is not designed for large signal designs. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip c onsists of a , N-TYPE OR P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT


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PDF HSMS-285x OT-23/SOT143 HSMS-282x HSMS-286x HSMS-285x OT-323 SC70-3 OT-363 SC70-6 S11 SCHOTTKY diode AV02-1377EN zero bias diode HSMS-285C 285L AVAGO DATE CODE MARKING AN1124 all silicon metal rectifier diode product List A004R
2003 - variable power divider

Abstract: circuit and working lcr meter 282P diode ring mixer phase detector 282R marking code C4 Sot 23-5 SOT143 C9 sot-23 DIODE marking code D3 NN SOT-143 65 marking sot23
Text: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-282x Series Features · Low , " for appropriate package marking . Unit SOT- 23 /SOT-143 SOT-323/SOT-363 Forward Current (1 µs , Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists , Height of the Schottky Barrier The current-voltage characteristic of a Schottky barrier diode at room , the HSMS-280x family of diodes. Turn to the HSMS-281x when you CROSS-SECTION OF SCHOTTKY BARRIER


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PDF HSMS-282x OT-363 HSMS-282K 5968-8014E 5989-0279EN variable power divider circuit and working lcr meter 282P diode ring mixer phase detector 282R marking code C4 Sot 23-5 SOT143 C9 sot-23 DIODE marking code D3 NN SOT-143 65 marking sot23
1999 - HSMS-285C

Abstract: Microwave detector diodes 285L AN1124 HSMS2850 HSMS-2850 HSMS285B marking code e6 sot363 HSMS-285x model
Text: . The HSMS-285x zero bias diode is not designed for large signal designs. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor , for very low barrier diodes. The Height of the Schottky Barrier The current-voltage characteristic of a Schottky barrier diode at room temperature is described by the following equation: Through , characteristics of a Schottky diode. Barrier height will be altered, and at the same time CJ and RS will be


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PDF HSMS-2850 OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 5968-5437E, 5968-5908E, 5968-2355E HSMS-285C Microwave detector diodes 285L AN1124 HSMS2850 HSMS285B marking code e6 sot363 HSMS-285x model
2005 - AV02-1377EN

Abstract: HSMS-285C avago marking j ir 0022 HSMP4 0/AVAGO DATE CODE MARKING AN1124 A004R 285L S11 SCHOTTKY diode
Text: package marking . SOT- 23 /SOT-143 Package Lead Code Identification (top view) SINGLE 3 UNCONNECTED , Power. See Figure 2. -5 R j = 8.33 X 10 n T = RV­ Rs The HeightIof+ I b Schottky Barrier the S , used. The HSMS-285x zero bias diode is not designed for large signal designs. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip c onsists of a , N-TYPE OR P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT


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PDF HSMS-285x OT-23/SOT143 HSMS-282x HSMS-286x HSMS-285x OT-323 SC70-3 OT-363 SC70-6 AV02-1377EN HSMS-285C avago marking j ir 0022 HSMP4 0/AVAGO DATE CODE MARKING AN1124 A004R 285L S11 SCHOTTKY diode
2005 - HSMS-286x Series

Abstract: silicon diode ideality factor HSMS-285X HSMS-2860 K 2865 rf power detector voltage doubler A004R HSMS2860 HSMS286B HSMS-286K
Text: frequencies above 4 GHz. At lower frequencies, the HSMS-282x family is preferred. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor , P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT , to as much as 5 µA for very low barrier diodes. The Height of the Schottky Barrier The current-voltage characteristic of a Schottky barrier diode at room temperature is described by the following


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PDF HSMS-286x OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 HSMS-286x. HSMS-286x-TR2G 5989-0480EN 5989-2495EN HSMS-286x Series silicon diode ideality factor HSMS-285X HSMS-2860 K 2865 rf power detector voltage doubler A004R HSMS2860 HSMS286B HSMS-286K
ZC2800

Abstract: MARKING 7A sot-23 E7* sot-23 D10 sot23 ZC5800E ZC5800 ZC2811E ZC2811 ZC2810E ZC2810
Text: , VR = 0V SCHOTTKY BARRIER DIODES CHARACTERISTICS (at 25°C ambient temperature) SOT- 23 and E-line ,  SCHOTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCHOTTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices , Schottky barrier diodes is covered more fully in the R.F.section. D10 SCHOTTKY BARRIER DIODES TABLE 7a - , = 0V Max. AC = 0.2pF, VR = 0V D11 SCHOTTKY BARRIER DIODES TABLE 7a - CHARACTERISTICS (at 25Â


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PDF OT-23 ZC2800 ZC2810 10fiA ZC2811 ZC5800 MARKING 7A sot-23 E7* sot-23 D10 sot23 ZC5800E ZC5800 ZC2811E ZC2811 ZC2810E ZC2810
2004 - AN1124

Abstract: HSMS-286x Series METAL DETECTOR circuit for make IC RFID 2.45 GHz HSMS-286x Microwave detector diodes mark code t4 diode SCHOTTKY DIODE SOT-143 diode SMA marking code PB chip diode 047
Text: frequencies above 4 GHz. At lower frequencies, the HSMS-282x family is preferred. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor , P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT , to as much as 5 µA for very low barrier diodes. The Height of the Schottky Barrier The current-voltage characteristic of a Schottky barrier diode at room temperature is described by the following


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PDF HSMS-286x OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 OT-363 SC70-6 5988-0970EN 5989-0480EN AN1124 HSMS-286x Series METAL DETECTOR circuit for make IC RFID 2.45 GHz Microwave detector diodes mark code t4 diode SCHOTTKY DIODE SOT-143 diode SMA marking code PB chip diode 047
2005 - FR4 substrate fiberglass

Abstract: AV02-1388EN schottky diode application sot-23 diode common anode t4 HSMS-2865 HSMS-286C
Text: Mount Schottky Reliability Data Sheet. Pin Connections and Package Marking 1 2 3 6 5 4 Notes: 1 , marking code. The third character is the date code. SOT- 23 /SOT-143 Package Lead Code Identification , Schottky Barrier IS + I b The current-voltage characteristic of a Schottky barrier diode at room , Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a , 13 HSMS-285A/6A fig 12 Avago Application Note 923, Schottky Barrier Diode Video Detectors. [2


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PDF HSMS-286x HSMS286x OT-23/SOT10 HSMS-286x-TR2G HSMS-286x-TR1G HSMS-286x-BLKG HSMS-286x. 2005-20089Avago 5989-4023EN AV02-1388EN FR4 substrate fiberglass schottky diode application sot-23 diode common anode t4 HSMS-2865 HSMS-286C
2005 - AN1124

Abstract: diode Marking code t5 HSMS-286C HSMS-286x Series
Text: Mount Schottky Reliability Data Sheet. SOT- 23 /SOT-143 Package Lead Code Identification (top view , , one can tailor the characteristics of a Schottky diode. Barrier height will be altered, and at the , (where high L.O. drive levels keep RV low) and DC biased detectors. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier , SUBSTRATE ; PASSIVATION N-TYPE OR P-TYPE EPI The Height of the Schottky Barrier The current-voltage


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PDF HSMS-286x OT-23/ OT-143 OT-323 OT-363 HSMS-286K 5989-0480EN 5989-2495EN HSMS-286x-TR2* AN1124 diode Marking code t5 HSMS-286C HSMS-286x Series
2005 - Microwave detector diodes

Abstract: HSMS-286x Series METAL DETECTOR circuit for make IC RFID 2.45 GHz AN1124 HSMS-286x high range METAL detector circuit SCHOTTKY DIODE SOT-143 k 2865 HSMS-286K
Text: , the HSMS-282x family is preferred. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition , SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT Figure 7. Schottky , for very low barrier diodes. The Height of the Schottky Barrier The current-voltage characteristic of a Schottky barrier diode at room temperature is described by the following equation: V -


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PDF HSMS-286x OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 Configurat65) 5989-2495EN 5989-4023EN HSMS-286x-TR2* Microwave detector diodes HSMS-286x Series METAL DETECTOR circuit for make IC RFID 2.45 GHz AN1124 high range METAL detector circuit SCHOTTKY DIODE SOT-143 k 2865 HSMS-286K
2005 - IC RFID 2.45 GHz

Abstract: HSMS-286B HSMS-286K 915 MHz RFID FR4 epoxy c65 schottky 34 sot-363 rf power amplifier ZZ 6-lead 286l HSMS-286B date code A
Text: characters are the package marking code. The third character is the date code. SOT- 23 /SOT-143 Package , frequencies above 4 GHz. At lower frequencies, the HSMS-282x family is preferred. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier , SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT Figure 7. Schottky Diode Chip. RS is the , PASSIVATION N-TYPE OR P-TYPE EPI -5 at 25°C The= Height of the Schottky Barrier Applications


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PDF HSMS-286x HSMS286x OT-23/SOT143 higheSOT-323 SC70-3 OT-363 SC70-6 HSMS-286x-TR2G HSMS-286x-TR1G HSMS-286x-BLKG IC RFID 2.45 GHz HSMS-286B HSMS-286K 915 MHz RFID FR4 epoxy c65 schottky 34 sot-363 rf power amplifier ZZ 6-lead 286l HSMS-286B date code A
2004 - Schottky Diode Marking C3

Abstract: diode ring mixer phase detector "Schottky Barrier Diodes" marking code C9 MARKING SOT-143 C5 c5 marking code sot-323 HSMS-2822 SCHOTTKY DIODE SOT-143 HSMS-2827 HSMS-2827-TR1 C7 282P
Text: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-282x Series Features · Low , Surface Mount Schottky Reliability Data Sheet. Package Lead Code Identification, SOT- 23 /SOT-143 (Top , and identification. 2. See "Electrical Specifications" for appropriate package marking . Unit SOT- 23 , for ultra high speed clipping and clamping in digital circuits. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor


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PDF HSMS-282x OT-363 HSMS-282K OT-23/SOT-143 SC70-6 5968-8014E 5989-0279EN Schottky Diode Marking C3 diode ring mixer phase detector "Schottky Barrier Diodes" marking code C9 MARKING SOT-143 C5 c5 marking code sot-323 HSMS-2822 SCHOTTKY DIODE SOT-143 HSMS-2827 HSMS-2827-TR1 C7 282P
2006 - Microwave detector diodes 18 GHz

Abstract: METAL DETECTOR circuit for make Microwave detector diodes SCHOTTKY DIODE SOT-143 FR4 epoxy pcb double sided HSMS-286x Series diode Marking code A2 silicon diode ideality factor metal detectors circuits piv bridge rectifier
Text: Schottky Reliability Data Sheet. 4 Notes: 1. Package marking provides orientation and , frequencies above 4 GHz. At lower frequencies, the HSMS-282x family is preferred. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor , P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT , to as much as 5 µA for very low barrier diodes. The Height of the Schottky Barrier The


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PDF HSMS-286x OT-23/SOT-143 OT-323 OT-363 OT-363 HSMS-286x-TR2* HSMS-286x-TR1* HSMS-286x-BLK HSMS-286x. Microwave detector diodes 18 GHz METAL DETECTOR circuit for make Microwave detector diodes SCHOTTKY DIODE SOT-143 FR4 epoxy pcb double sided HSMS-286x Series diode Marking code A2 silicon diode ideality factor metal detectors circuits piv bridge rectifier
Diode Marking z3 SOT-23

Abstract: schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 Z4 SOT23 sot marking code w7
Text:  SCHOTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCHOTTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices , Schottky barrier diodes is covered more fully in the R.F.section. D10 SILICON ION IMPLANTED HYPERABRUPT , with nominal diode capacitance ±5% add suffix B to the device type number. SCHOTTKY BARRIER DIODES , • Available in three packages: Economical Plastic E-line Microminiature SOT- 23 • Low Leakage


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PDF OT-23 to-92 sot-23 BZX84 FMMD3102 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 ZC830 Diode Marking z3 SOT-23 schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 Z4 SOT23 sot marking code w7
2001 - HSMS-286x Series

Abstract: Microwave PIN diode spice HSMS-286C 09093 radar detector leakage HSMS2860 286E HSMS286B HSMS-286K Microwave detector diodes
Text: package marking code. The third character is the date code. RING QUAD 5 5 3 SOT- 23 /SOT , , the HSMS-282x family is preferred. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition , SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT Figure 7. Schottky , for very low barrier diodes. The Height of the Schottky Barrier The current-voltage


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PDF HSMS-286x OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 OT-363 HSMS-286K 5980-1499E 5988-0970EN HSMS-286x Series Microwave PIN diode spice HSMS-286C 09093 radar detector leakage HSMS2860 286E HSMS286B Microwave detector diodes
2005 - RFID 5.8Ghz

Abstract: phase shift detector at 2.45GHz rf power detector voltage doubler ATC100A101MCA50 HSMS-286K microstrip Antenna 5.8ghz AN1124 ATC100A1 rfid reader 915MHZ HSMS-286B
Text: frequencies, the HSMS-282x family is preferred. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of , Cj Rj N-TYPE OR P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP , EPI -5 at 25°C The= Height of the Schottky Barrier Applications Information METAL 8.33 X 10 IS + I b The current-voltage characterstic of a Schottky barrier i diode at room


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PDF HSMS-286x HSMS286x OT-23/SOT143 th-323 SC70-3 OT-363 SC70-6 HSMS-286x-TR2G HSMS-286x-TR1G HSMS-286x-BLKG RFID 5.8Ghz phase shift detector at 2.45GHz rf power detector voltage doubler ATC100A101MCA50 HSMS-286K microstrip Antenna 5.8ghz AN1124 ATC100A1 rfid reader 915MHZ HSMS-286B
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