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SY02-HPLL-F8-D2-4-IJ datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
SY02-HPLL-F8-D2-4-IJ SY02-HPLL-F8-D2-4-IJ ECAD Model Raltron Electronics IC CLOCK/SYNCHRONIZER Original PDF

SY02-HPLL-F8-D2-4-IJ Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - J449

Abstract: No abstract text available
Text: = > 4 =% =5 6 $ % 6 4 $D % #()FGH $D 3?@ .A + IJ $ $ #()FGH 4 4 4 4 $, $6 4 , : 7 & $ $ ;<6 6 65 4 % 0 = : =B C $ $ E 5 65 4 % E $ E 5 #()FGH IJ $ 3?@ .A + $ # , #() + M #U) + ` # U.- + R [ $ 5 R 4 > ,()* IJ # # 0 0 3?@ + 3?@ + , < 3?@ + % 8 5 4 IJ % #1 + #1 + #R S + #R S + ,m + ,m + ,m + % , ( #1 + #1 + % ] > > i 4 + ! 0'Y O3?@+ IJ IJ IJ % # 0 + ! 3?@ + 3


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2010 - Not Available

Abstract: No abstract text available
Text: &8 IJ -K ) / L5 & & !&'EFG 4 3 5 B C # 3 5 6 3 < 9 &0 5 5 & 9 7 # 4 35 +O , ) L5 IJ ) / L5 @ 7 $5 $ 9 3 = ! 4 = # 3 @ 7 7 A A +&12 , `E B < !B !X' ) !B !X' ) !B IJ ) /L5 4 # :" IJ ) /L5 IJ ) /L5 IJ ) / L5 IJ ) /L5 , * * * +n12 !1 ) !1 ) 4 6 0 IJ ) / L5 IJ ) L5 IJ ) / L5 3 9 = +o !112 +n 7 , ' ) * :" 4 += += 3 {G[i& ) T V : 3 < , * ;-,B ;-,B ;-ddB ;-ddB IJ ) / L5


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AS0B

Abstract: diode+t25+4+L5
Text: % C 4 "'(EFG H %8 % IJ -K * / L5 % "'(EFG 4 3 B C $ 3 5 6 3 < 9 %0 5 5 % 9 7 , * / L5 IJ * L5 IJ * / L5 @ 7 %5 % 9 3 = " 4 = $ 3 @ 7 7 A A , ( * / "B "W( * " 5a`E B < "B "W( * "B "W( * "B IJ * /L5 4 $ :# +' * / 0B "' , IJ * / L5 ;a`q Y 3 4 70o 70o 91p2 $ % j 3 "B V * "B V * 3 # " +n12 "1 * "1 * 4 6 0 "112 3 9 = +o IJ * / L5 IJ * L5 IJ * / L5 3 7


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2010 - J449

Abstract: No abstract text available
Text: = > 4 =% =5 6 $ % 6 4 $D % #()FGH $D 3?@ .A + IJ $ $ #()FGH 4 4 4 4 $, $6 4 , : 7 & $ $ ;<6 6 65 4 % 0 = : =B C $ $ E 5 65 4 % E $ E 5 #()FGH IJ $ 3?@ .A + $ # , #() + M #U) + ` # U.- + R [ $ 5 R 4 > ,()* IJ # # 0 0 3?@ + 3?@ + , < 3?@ + % 8 5 4 IJ % #1 + #1 + #R S + #R S + ,m + ,m + ,m + % , ( #1 + #1 + % ] > > i 4 + ! 0'Y O3?@+ IJ IJ IJ % # 0 + ! 3?@ + 3


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Transistor y4n

Abstract: wy60 icpbqj 130U JQPB K9N6
Text: ICPCQET ICPTQBJ ICPRQJD P4E, 4 -$ 6$#2,$.P4-$ IJ \JB\EJT IJ \JB\B\P IJ \JB\BPJ IJ \JB\BRB IJ \JB , .30$%2E2&"0<.6"(".+)$$( F"&D"0<.7GG7 !"#$%$&'()*+$%$,($-./%(0".12')*345$0.6789:3*;<=$.>? 4 %"($-. , :3*;<=$. >? 4 %"($-.6@A.B"?$0.C4-D%$? 30$%2E2&"0<.6"(".+)$$( F"&D"0<.7GG7 6$?,02=(24&.6.*-3"-1' , U,<'0K(*1-; \ U,<'0K(*1-; IJ U,<'0K(*1-; II `,<'(0_-*;'06m:0g IB a@0`,<' , `MUXY0j0_Uak`_GZ: E l `I IDJ0-! GZU WGaZWW0aX? D IJ II l m IB IE ID I%CTR G


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PDF i06PCB R7R706W$ 88aa06A' c77906W$ RaGG06G* 8G06W' a79a79/0@ i06DD 30x0BJJB0_ Transistor y4n wy60 icpbqj 130U JQPB K9N6
IS 1007

Abstract: No abstract text available
Text: CUSTDMER & PRDPDSEE DRAWING 2 3 4 5 ADD C O N T R O L T O L E R A N C E R E V IS E THE PRDDUCT , # SSN002, 95.0+ g^ - 5 , 2 0 + g 'J RDER P / N SYSTEM O- C 1 4 3 -D 128F-95A -00X 1-PLATING CODE: 1 l,27umMIN GOLD 2 0.6umMIN GOLD 4 0,3umMIN GOLD 6 0.8umMIN GOLD PLATING PLATING PLATING PLATING 9 0 .0 - 0 .2 5 1AI I S LID E INTO il i il i il i il ij il ij il ij il ij il ij il M i ' ij il ij il ij il ij I ' ij il ij il ij il i li li l i il ij il ij il ij il ij il ij il ij


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PDF HK5478 DRAVING\DIN\CC143D128F95A00X-5J C143-D128F-95A-00X IS 1007
2009 - jrm A 45

Abstract: jrm 45
Text:   . 2 ; 2 6 = . 7 +! 33  -('> 4 "   23 5 5   +! . . 3 7 -7+ ,  23 22  #?>  B8  0 72 32 -( '> 4 " 2 : 2373 233 3 ; 273 23 233 9. > 5' +! 8& 2 7 . 5  223 98 5 4 $ * 23 90 273 23  2 9 , 7 5  28 3 245 !' 8#?' 4 $ > +'$ (8" 1 '> % 7!( ##>  45 8  % 8 , 23456 = 23E 3345  8 / / 1 723 3E 5$ "* 9 3  33345 3  23E  (*F%$ 4


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NM6403

Abstract: No abstract text available
Text: sr . (10) k ij Max , . k ij Max / 4 < k ij < k ij Max , , , [7]. kij , : , ( ), ( ), (, ), , [2] . . , . , ( - ) . . . [3, 4 ] . , ) 18791 , (3) . , (2) : ( 4 ) f (t ) = (U - b)k , , «» , ( 4 ) : a ' ij = (aij - bij ) × k ij , (5) aij - ; a ' ij - ; bij - i, j « » «» ; k ij , . bij 272 : 68 . [6]: aij = .[ a ij - aa ij 2q + aaij ], (6


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PDF NM6403, NM6403 NM6403
2009 - transistor yk

Abstract: FZ1800R12HP4_B9 2sd88
Text: / IJ ; , / !) 3K +,- / +K . / I 7 +P- / _!I +K 4 / I +4V '>GH/!I J;* >GH / ! IJ ; >GH / !I J; WP1aa , >GH/!I J;* WP10 / !K) Y C > 4 K@ K ,-. +K >GH / IJ ; +P- c !I +K +, / ) + +,-2Sd / + , '#eF* 4 " !K) !KLI !KL >GH / IJ ; >GH / ! IJ ; >GH / !I J; + + + WOTf, hi]ZSRZ / ! , W,st-s K! #Y K ;8 >, / IJ ;K K # # A" R,- # 3 # " ? 8 4 8 , Vorläufige Daten / preliminary data +,-. / ! + , 012 / !) 3 4 ,56 / $ Typische Anwendungen ·7 · ·=


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PDF FZ1800R12HP4 transistor yk FZ1800R12HP4_B9 2sd88
Not Available

Abstract: No abstract text available
Text: 94 i()() 75 ÎLCE8.5A | 8.5 | 9.44 ¡| 10.4 ! ï ! 50 ij Ï4. 4 ij 100 j 100 | 75 10 1 16.9 ¡ 89 ¡ 100 , i 13 | 14.4 ! 15.9 I 1 ij 5 ij 21.5 j 70 I 100 j 75 |l c e i 4 | .5. |. 25.8 , 124.5 j ï ij 5 j 32.4 ij 46 i 100 I 75 |l CE22 TM 22 \2 4 A \2 9 X "TM Y nr 5 j 394 38 î 1 0 0 j 75 i , ILCE3ÔA ! 30 | 33.3 I 36.8 i|i 1 ij 5 ! 48.4 i| 31.0 j 100 j 75 ;U:E33. ! 33. [3 6 J [ 4 4 9 i , !l()/l()()()jjs ! I ij | iBreakdown Voltage !Maxi mum !Maximum ! 10/1 OOOjjs | !Working I : Rated | j


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BF123

Abstract: PET4002 T1060 BFX53 BFW76 BFW75 BFW74 TE5311 E901A GW 9n
Text: 4O u0 8 .0 k 10k(Zl 5 .0 8 .0 E) 4 .O d S 0 ts ts tJ tJ tJ ÍJ tJ tJ tJ tJ J J $s $s $s $J J J , _ - - 7 o 2. GERMANIUM PNP UNE No. Iä l I TYPE No. 4 . SILICON P N | > 15. SILICON , 330m 330m 330m 330m 330m 350m 350m 350m 350m 350m 35 0 m 350m 350m dt 350m 1# 2# 3 4 5# 6# 7 8 9 , # 104 105 106# 1.1Ö5 1.1GS 1.2G 1 .3 G IA 1.3G § 1 .3 G IA 1.3G § 1.4G § 1.4G § 1 . 4 G I 1,5 G § 1 .5 , 1.7m 2.0 m 2.5 m 2.0 m IJ IJ IJ IJ IJ $J §J IJ IJ IJ IJ IJ §J §J IJ §J §J IJ §J §J 30 30 15 15 30 20 30


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xxww

Abstract: No abstract text available
Text:   . 2 ; 2 6 = . 7 +! 33  -('> 4 "   23 5 5   +! . . 3 7 -7+ ,  23 22  #?>  B8  0 72 32 -( '> 4 " 2 : 2373 233 3 ; 273 23 233 9. > 5' +! 8& 2 7 . 5  223 98 5 4 $ * 23 90 273 23  2 9 , 7 5  28 3 245 !' 8#?' 4 $ > +'$ (8" 1 '> % 7!( ##>  45 8  % 8 , 23456 = 23E 3345  8 / / 1 723 3E 5$ "* 9 3  33345 3  23E  (*F%$ 4


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Not Available

Abstract: No abstract text available
Text: CKI2 I Clock input pin (SVGA, VGA) — 4 HSYNC I Horizontal sync signal input pin , polarity) — 37 SHD4 0 Sample-and-hold pulse 4 output (for driver/positive polarity) â , €” GND — 43 SH4 0 Sample-and-hold pulse 4 output (for high voltage drive sample and hold , discrimination signal output (High: Down, Low: Up) — 0 Description - 4 - 0302303 OOmöSfi SSI , , SH3, SH4, SH5, SH6, SH7, SH8, SHD1, SHD2, SHD3, SHD4, HCK1, HCK2 * 4 Normal input pins (V in = V s s


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PDF CXD2442Q CXD2442Q LCX016 LCX012BL LCX016/LCX012BL LCX016/LCX012BL) LCX016 Macintosh16) PC-98) MPD485505
2N5036

Abstract: A1381 transistor 2N5034 2N5035 2SD323 156-043 B170001 SEC1077 ST415 TK200A
Text: DMt DPE X53 X53 A0 A0 C0 4 5 6 SEC1077 SEC 1078 SEC1079 500m 500m 500m 1 1 1 100 50 50 9.0 9.0 9.0 , 500m 500m 500m 45 0 % 1 IJ SJ 500m 6OOm0 100 80 40 9.0 10 6.0 100 1 80 20 10m0 1.Ou0 150 9.00 2.0 1.0 , SG8207 SG8207A 533m 533m 533m 80 0# 80 0# 80 0# IJ IJ IJ 8.0 10 t 10 t 65 4.0 6.0t 6.0Î 35 80 0* 80 El , 10On0El D PL T053 T03 23 24 25 N PC 14-1 B N PC 14-2 2N2403 565m 565m 571m0 100 0 100 0 8.0 0 IJ IJ 1 10 , 28 2N2404 MM 1620 SCC321 571m0 571m 571m 8.0 0 100 0 100 0 1 IJ IA 1.0 7.0 10 4.0 60 48 5.0 4.0 5.0


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PDF NPN110. buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N5036 A1381 transistor 2N5034 2N5035 2SD323 156-043 B170001 SEC1077 ST415 TK200A
MN6403

Abstract: NM6403
Text: 18791 (MN6403). k ij 4 - 64- : k ij = .[(a ij + aa ij ) / 2], a ij - 64 [2], aa ij - 64 . : 128 1 k ij sr = (1) k ij 16384 i =1; j =1 (1) k ij Max = 2 * k ij sr . k ij Max , . k ij Max / 4 < k ij < k ij Max , , , . . 1. . . , , : 2- . .-. . - : , 2003. - 207 . 2. . NM6403 (18791). 4 - .


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PDF MN6403) NM6403 MN6403 NM6403
MA3232

Abstract: FT4017 CA3036 BF123 BVEBO-15V BF121 DIODE SJ 98 DM01B A431 GW 9n
Text: . IDERATE T IN M E DISS. fab FREE t M )Í P @25°C AIR (W) (Hz) W /X BFW74 300m 2.0m IJ 1.1Ö5 BFW75 300m 2.0m 1.1GS IJ 2N709/511 300m 1.2G 1.7m IJ 300m 2N3633/52Î 1.3GIA 1.7m IJ BFW 76 300m 1.3G§ 2.0m IJ BFX53 300m 1.3GIA 2.5m $J MT1060 300m 2.0m 1.3G§ §J A215 300m 1.4G§ IJ BFX 4 2 I 300m 1.7m 1.4G§ IJ FT40 300m 1.4GI 1.7m IJ 300m BFW 76A 1,5G§ 2.0m IJ MT1060A 300m 2.0m 1.5GI IJ 300m §J MT1062 1.5G§ 2.0m 35822B 300m 9 , UNE No. Iä l TYPE No. I AIR [X P W £C I I (V) I I 4 . SILICON PN|> 1 5. SILICON N P N - L o w Power


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PDF BVCBO-100V BVCE0-80V BVEBO-15V BVCBO-60V BVCEO-40V BVCB0-80V BVCE0-60V BVCB0-100V MA3232 FT4017 CA3036 BF123 BF121 DIODE SJ 98 DM01B A431 GW 9n
SD3D

Abstract: No abstract text available
Text: [ 4 FH2B HDI [6 ^ TVMD [ T FR [ T CKI [ T GND [TÖ V vr\ CO 16] Cl TgSO m ] si 13] CH i f , voltage < (V c c = + 5 V ± 5 % Ta = - 2 0 to + 7 0 " C) SYMBOL VlL VlH Vt Vt < H 4 I CONDITIONS MIN. TYP. MAX. 1.5 UNIT V V NOTE 1 3 .5 2 .2 3 .8 2 . 4 V Schmitt Buffer 1 .0 0 . 4 v V m 2 llL1 I llL2 I Vi = 0 V Vi = 0 V Vi = Vcc Ioh - 2 mA 4 .0 8 .0 1.0 60 1.0 A 3 4 5 6 HA I I'» I VOH1 V o li VOH2 VOL2 VOH3 VOL3 M V Iol = 4 m A I


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PDF LZ93BE0 20-PIN LZ93BE0 LZ95G55, LZ95G41 LZ93F33, LZ93F50, LZ93N61 LZ95D SD3D
2N5034

Abstract: 2N5036 2N5035 156-043 PL 105 SG8207A 2N2404 2SC1325 TK200A 300U
Text: DMt DPE X53 X53 A0 A0 C0 4 5 6 SEC1077 SEC 1078 SEC1079 500m 500m 500m 1 1 1 100 50 50 9.0 9.0 9.0 , 500m 500m 500m 45 0 % 1 IJ SJ 500m 6OOm0 100 80 40 9.0 10 6.0 100 1 80 20 10m0 1.Ou0 150 9.00 2.0 1.0 , SG8207 SG8207A 533m 533m 533m 80 0# 80 0# 80 0# IJ IJ IJ 8.0 10 t 10 t 65 4.0 6.0t 6.0Î 35 80 0* 80 El , 10On0El D PL T053 T03 23 24 25 N PC 14-1 B N PC 14-2 2N2403 565m 565m 571m0 100 0 100 0 8.0 0 IJ IJ 1 10 , 28 2N2404 MM 1620 SCC321 571m0 571m 571m 8.0 0 100 0 100 0 1 IJ IA 1.0 7.0 10 4.0 60 48 5.0 4.0 5.0


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PDF NPN110. 40MSA 40MSA 40MIA 800kSA A1381 B148005t 50MIA 2N5034 2N5036 2N5035 156-043 PL 105 SG8207A 2N2404 2SC1325 TK200A 300U
2009 - Not Available

Abstract: No abstract text available
Text:   . 2 ; 2 6 = . 7 +! 33  -('> 4 "   23 5 5   +! . . 3 7 -7+ ,  23 22  #?>  B8  0 72 32 -( '> 4 " 2 : 2373 233 3 ; 273 23 233 9. > 5' +! 8& 2 7 . 5  223 98 5 4 $ * 23 90 273 23  2 9 , 7 5  28 3 245 !' 8#?' 4 $ > +'$ (8" 1 '> % 7!( ##>  45 8  % 8 , 23456 = 23E 3345  8 / / 1 723 3E 5$ "* 9 3  33345 3  23E  (*F%$ 4


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2N5017

Abstract: 2SD2350 CP405 MHT5906 MHT5905 T062 description BD145 bo113 BD116 2SD234r
Text: )Mm PL PL PL toee T066 T066 C0 4 5 6 MHT5908 MHT5909 MHT5910 166m$ 166m» 166m8 16 0 16 0 16 0 IJ IJ SJ 2.0 2.0 2.0 500m 500m 500m 100 140 180 8.0 8.0 8.0 1OOn0 1OOn0 1OOn0 2.00 2.00 2.00 500m 500m , MHT5905 MHT5906 MHT5907 1 66m$ 166m$ 166m$ 16 0 16 0 16 0 IJ IJ IJ 2.0 2.0 2.0 500m 500m 500m 18Ô 60 80 , 166m9 166m$ 166m$ 16 0 16 0 16 0 IJ IJ IJ 2.0 2.0 2.0 500m 500m 500m 60 80 100 8.0 8.0 8.0 10On0 10On0 , r0 10 11 12# MHT5914 MHT5915 BLY29t 166m$ 166m$ 171m 16 0 16 0 30 0 IJ IJ IJ 2.0 2.0 3.0 500m 500m


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PDF NPN110. buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N5017 2SD2350 CP405 MHT5906 MHT5905 T062 description BD145 bo113 BD116 2SD234r
2N5036

Abstract: TRANSISTOR BV 32 usaf516es047m 2N5035 2N5034 FZJ 101 SEC1077 B170001 156-043 2N5425
Text: DMt DPE X53 X53 A0 A0 C0 4 5 6 SEC1077 SEC 1078 SEC1079 500m 500m 500m 1 1 1 100 50 50 9.0 9.0 9.0 , 500m 500m 500m 45 0 % 1 IJ SJ 500m 6OOm0 100 80 40 9.0 10 6.0 100 1 80 20 10m0 1.Ou0 150 9.00 2.0 1.0 , SG8207 SG8207A 533m 533m 533m 80 0# 80 0# 80 0# IJ IJ IJ 8.0 10 t 10 t 65 4.0 6.0t 6.0Î 35 80 0* 80 El , 10On0El D PL T053 T03 23 24 25 N PC 14-1 B N PC 14-2 2N2403 565m 565m 571m0 100 0 100 0 8.0 0 IJ IJ 1 10 , 28 2N2404 MM 1620 SCC321 571m0 571m 571m 8.0 0 100 0 100 0 1 IJ IA 1.0 7.0 10 4.0 60 48 5.0 4.0 5.0


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PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2N5036 TRANSISTOR BV 32 usaf516es047m 2N5035 2N5034 FZJ 101 SEC1077 B170001 156-043 2N5425
Not Available

Abstract: No abstract text available
Text: $(67 SKiM 4 Values M ? ? M K> K> IJPP M SPP CISPD VPP ? ? IIPP E , IJ CRPD K> ,7 H O E5 M1563 ® $( H IJ K>L :'3&55 6,)&%015& 57&(121&4 ? ?>L O E1'[ Inverse diode IGBT Modules -; -;TU $5 H IJ CRPD K> ,7 H O E5 -;GU ,7 H OP E5^ 51'[^ $X H OJP K> $( H IJ K>L :'3&55 6,)&%015& 57&(121&4 Target Data Characteristics Symbol Conditions , >N H M>NG^ $X H IJ K> $X H IJ COIJD K> $X H IJ COIJD K> M>N5+, ->'6E H SPP ?^ M.N H OJ ML


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PDF 400GD126DM M1563
A1381 transistor

Abstract: 2N5036 CA3036 MA3232 NF Amp NPN Silicon transistor TO-3 20C26 2N5034 package 2N5034 L29a 2N5035
Text: DMt DPE X53 X53 A0 A0 C0 4 5 6 SEC1077 SEC 1078 SEC1079 500m 500m 500m 1 1 1 100 50 50 9.0 9.0 9.0 , 500m 500m 500m 45 0 % 1 IJ SJ 500m 6OOm0 100 80 40 9.0 10 6.0 100 1 80 20 10m0 1.Ou0 150 9.00 2.0 1.0 , SG8207 SG8207A 533m 533m 533m 80 0# 80 0# 80 0# IJ IJ IJ 8.0 10 t 10 t 65 4.0 6.0t 6.0Î 35 80 0* 80 El , 10On0El D PL T053 T03 23 24 25 N PC 14-1 B N PC 14-2 2N2403 565m 565m 571m0 100 0 100 0 8.0 0 IJ IJ 1 10 , 28 2N2404 MM 1620 SCC321 571m0 571m 571m 8.0 0 100 0 100 0 1 IJ IA 1.0 7.0 10 4.0 60 48 5.0 4.0 5.0


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V A1381 transistor 2N5036 CA3036 MA3232 NF Amp NPN Silicon transistor TO-3 20C26 2N5034 package 2N5034 L29a 2N5035
Not Available

Abstract: No abstract text available
Text: ¥ Inverse diode IGBT Modules # # # Values $5 H IJ CRPD K> ,7 H O E5 M1563 ® $( H IJ , ,& 4 @8 ?-A B>/ CB1%&(, >677&% /6'4&4D (&%+E1( 73+,& F%&55:%& (6',+(, ,&()'636*8 26% ,)&%E+3 (6',+(,5 G7%1'* (6',+(, 585,&E ,6 +,+() 4%1=&% F>/ ,6 ,)& (6',%63 ,&%E1'+35 -',&*%+,& 4 ,&E7&%+,:%& 5&'56% # Typical Applications* # G01,()& 4 E64& 760&% 5:7731&5 # $)%&& 7)+5& 1'=&%,&%5 26% ?> E6,6% 57&&4 (6',%63 -; -;VW $5 H IJ CRPD K> ,7 H O E5 -;GW ,7 H OP E5_ 51'Â¥_ $Z H OJP K


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PDF 601GD126DM M1563
Not Available

Abstract: No abstract text available
Text: $L * IJ K2 C2 $(,5& * IJK2@ <'/&55 .-)&%785& 59&(8=8&D Units NIOO 1 $( * IJ K2 IAO E $( * PO K2 NQO E TOO E V IO 1 $L * NIJ K2 NO Z5 $( * IJ K2 IOO E $( * PO K2 NÂ¥O E TOO E $L * NJO K2 NNOO E $( * IJ K2 IOO E $ , typ. $L * IJ K2 1U34-)6 min. $L * IJ K2 $L * NIJ K2 123O %23 12345,-6 1U3 * NJ 1 C2'.; * NJO E@ 1U3 * NJ 1 $L * IJK2()89/&:] $L * NIJK2()89/&:] 28&5 2.&5 cU RU8'- $L * IJ


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PDF 200GB126D 200GB126D
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