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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L Visit Toshiba Electronic Devices & Storage Corporation
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

SWITCHING TRANSISTOR C144 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - c144

Abstract: C1448 C144 transistor transistor c144 A12L CY7C144 CY7C145 R2347 c1449
Text: -8 C144 -9 Switching Characteristics Over the Operating Range[10] 7C144-15 7C145-15 Parameter , A 0R CE R OE R R/W R SEM L INT L [2] SEM R INT R [2] C144 -1 M/S Notes: 1. BUSY , 37 38 39 40 41 42 43 C144 -2 A6L A5L 49 54 A7L A12L 56 55 51 50 VCC 57 , I/O6R 17 CY7C144 BUSYR A3R C144 -3 Notes: 3. I/O8R on the CY7C145. 4. I/O8L on , R/WR OER 22 21 I/O7R O 3R O 4R CY7C145 I/O8R NC GND /O0R /O1R C144


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PDF CY7C144 CY7C1458K CY7C145 CY7C144 CY7C144) CY7C145) 65-micron CY7C145, c144 C1448 C144 transistor transistor c144 A12L CY7C145 R2347 c1449
1996 - C144

Abstract: transistor c144 C144* datasheet C144-21 C1446 C1448 C144 sa C144 transistor C144 transistor datasheet C1447
Text: ns 3 ns Load (Load 2) C144 -9 C144 -8 Switching Characteristics Over the Operating Range , tWH C144 ­18 11 CY7C145 CY7C144 Switching Waveforms (continued) Busy Timing Diagram No. 1 , R [2] C144 -1 M/S Notes: 1. BUSY is an output in master mode and an input in slave mode. 2 , C144 -2 64-Pin TQFP Top View I/O2L 1 48 A4L I/O3L I/O4L 2 47 3 4 46 45 , A4R CY7C144 41 BUSYR A3R C144 -3 Notes: 3. I/O8R on the CY7C145. 4. I/O8L on the


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PDF CY7C145 CY7C144 CY7C144) CY7C145) 65-micron 68-pin 64-pin 80-pin C144 transistor c144 C144* datasheet C144-21 C1446 C1448 C144 sa C144 transistor C144 transistor datasheet C1447
a96 laser diode

Abstract: scr inverter SCR Handbook, General electric SCR Applications Handbook c144 diode General electric SCR CI44 c14415 C144 sa C144M30M
Text: thyristor semiconductor device designed primarily for high-frequency power switching applications which , turn-off time characteristics of a low blocking voltage SCR. Equipment designers can use the C144 SCR in , €”65°C to +125°C Peak or DC Switching Voltage VovorVD(2X3) Tc = —65°C to +125°C Repetitive Peak Reverse , On-State Current, di/dt: (5) Gate triggered operation: Switching from 500 volts (500 volt types).100 Amperes per microsecond Switching from 600 volts (600, 700, 800 volt types).


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PDF Cur-200 a96 laser diode scr inverter SCR Handbook, General electric SCR Applications Handbook c144 diode General electric SCR CI44 c14415 C144 sa C144M30M
2001 - C144

Abstract: A12L CY7C144 CY7C145 68-LEAD arbitration scheme
Text: ) C144 -9 C144 -8 Switching Characteristics Over the Operating Range[9] 7C144-15 7C145-15 , CE R OE R R/W L R/W R SEM L INT L [2] SEM R INT R [2] C144 -1 M/S Notes: 1 , 33 34 35 36 37 38 39 40 41 42 43 C144 -2 A6L A5L 49 54 A7L A12L 56 55 51 50 , OER 18 I/O7R I/O6R 17 CY7C144 BUSYR A3R C144 -3 Notes: 3. I/O8R on the , /O1R A2R A3R NC C144 -4 Pin Definitions Left Port Right Port Description I/O0L


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PDF CY7C145 CY7C144 CY7C144) CY7C145) 65-micron 68-pin 64-pin 80-pin C144 A12L CY7C144 CY7C145 68-LEAD arbitration scheme
1996 - C144

Abstract: transistor c144 c144 diode C144 transistor C144-12 A12L CY7C144 CY7C145 c14415 c1449
Text: % 90% 10% 90% 3 ns 3 ns Load (Load 2) C144 -9 C144 -8 Switching Characteristics , R/W BUSY tWB tWH C144 ­18 11 CY7C145 CY7C144 Switching Waveforms (continued , ARBITRATION A 0R CE R OE R R/W L R/W R SEM L INT L [2] SEM R INT R [2] C144 -1 M/S , C144 -2 A6L A5L 49 54 A7L A12L 56 55 51 50 VCC 57 A8L CEL NC A9L , R/WR SEMR 19 20 OER 18 I/O7R I/O6R 17 CY7C144 BUSYR A3R C144


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PDF CY7C145 CY7C144 CY7C144/5 CY7C144/5 64/72-Kbit 16/18-bit C144 transistor c144 c144 diode C144 transistor C144-12 A12L CY7C144 CY7C145 c14415 c1449
scr inverter

Abstract: SCR Handbook, General electric a96 laser diode SCR Applications Handbook c14415 C144 c144 diode 12 volt dc to 220 volt ac inverter 1000 watts CI44 SCR Handbook
Text: primarily for high-frequency power switching applications which requires blocking voltages from 500 to 800 , . Equipment designers can use the C144 SCR in demanding applications such as: choppers, inverters, regulated , ) Repetitive Peak Off-State Voltage. VORM (2)(3), Tc = —65°C to +125°C Peak or DC Switching Voltage VovorVD , triggered operation: Switching from 500 volts (500 volt types).100 Amperes per microsecond Switching from 600 volts (600, 700, 800 volt types). 100 Amperes per


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PDF Cur-200 scr inverter SCR Handbook, General electric a96 laser diode SCR Applications Handbook c14415 C144 c144 diode 12 volt dc to 220 volt ac inverter 1000 watts CI44 SCR Handbook
1996 - C144 TRANSISTOR

Abstract: SWITCHING TRANSISTOR C144 TRANSISTOR C144 c144 equivalent transistor LQ10P311 LQ10P c144 TRANSISTOR D640 65lines TCL TV
Text: ) incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel , . When the data enable terminial (ENAB) is fixed `Low,' the horizontal display starts at the data of C144 , NUMBER OF CLOCK* 1.5 V 1.5 V C144 * tH D640 3.5 V 5714-6 VERTICAL INVALID DATA PERIOD , OF CLOCK* 1.5 V C144 * 3.5 V tH DH t tVD tEP tHD 3.5 V 1.5 V DS 1.5 , LINE DH1 3.5 V tES D1 NUMBER OF CLOCK* 1.5 V C144 * tH DS DH t tCL


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PDF LQ10P311 LQ10P311 400-line 350-line C144 TRANSISTOR SWITCHING TRANSISTOR C144 TRANSISTOR C144 c144 equivalent transistor LQ10P c144 TRANSISTOR D640 65lines TCL TV
SWITCHING TRANSISTOR C144

Abstract: C144 transistor transistor c144 ge c147 c144 diode C144 e s j
Text: comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of , 8.0A, T j = 150°C V qe = ±20V See Fig. 13 Switching Characteristics @ T j = 25°C (unless , Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance , Effective Transient Thermal Impedance, Junction-to-Case C-144 I«R CPV362MF V GE = 0V, Cjes = Cge


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PDF 10kHz) CPV362MF 360Vdc, modu17 C-147 13-pin) C-148 SWITCHING TRANSISTOR C144 C144 transistor transistor c144 ge c147 c144 diode C144 e s j
1996 - SWITCHING TRANSISTOR C144

Abstract: TRANSISTOR C144 LQ10D311 C144 TRANSISTOR c144 TRANSISTOR D640 DG136 D639 D639 TRANSISTOR QZ-19-3F01
Text: ) incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel , tCL tC 1.5 V 1.5 V 1.5 V DH3 NUMBER OF LINE D2 NUMBER OF CLOCK* 1.5 V C144 , OF CLOCK* 1.5 V C144 * tH 1.5 V 1.5 V 1.5 V 1.5 V D640 1.5 V 5710-5 , OF LINE D2 NUMBER OF CLOCK* 1.5 V C144 * tH 1.5 V 1.5 V 1.5 V 1.5 V D640 , switching the input signals for `black' ON and OFF. 5. Measurements shall be taken at the center of the


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PDF LQ10D311 LQ10D311 SWITCHING TRANSISTOR C144 TRANSISTOR C144 C144 TRANSISTOR c144 TRANSISTOR D640 DG136 D639 D639 TRANSISTOR QZ-19-3F01
TRANSISTOR C144

Abstract: SWITCHING TRANSISTOR C145 SWITCHING TRANSISTOR C144
Text: . These modules are more efficient than comparable bipolar transistor modules, while at the same time , diode reverse recovery > o II ID Coes Turn-Off Delay Time Fall Time Total Switching Loss , Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay , , Junction-to-Case C-144 4AS5452 001^34 7T 3 ■IOR CPV362MF V CE , Collector-to-Emitter , , Case Temperature (°C) R g , Gate Resistance ( fi) Fig. 9 - Typical Switching Losses vs. Gate


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PDF CPV362MF 10kHz) 360Vdc, 13-pin) C-148 TRANSISTOR C144 SWITCHING TRANSISTOR C145 SWITCHING TRANSISTOR C144
2004 - SWITCHING TRANSISTOR C144

Abstract: transistor c144 C144 TRANSISTOR RESISTOR C144 TRANSISTOR SWITCHING TRANSISTOR C145 LDO PCB Layout Guidelines C144 ESR c144 fet AN1989 Meggitt CGS
Text: external components needed for using QUICCsupply devices. Introduction The switching converter uses a , . The linear LDO voltage regulator controller provides the gate control for an external pass transistor , -V IN F S I F S I (Eq. 6) Where FS is the switching frequency VIN is the maximum input , of the choice. Layout Consideration When designing high switching frequency power supplies, care , for core voltage 1.8V / 3A · The I/O voltage is 3.3V / 2A · The switching frequency is 250kHz ·


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PDF AN1989 MC3371 MC33702 MC33701and MC33702 SWITCHING TRANSISTOR C144 transistor c144 C144 TRANSISTOR RESISTOR C144 TRANSISTOR SWITCHING TRANSISTOR C145 LDO PCB Layout Guidelines C144 ESR c144 fet AN1989 Meggitt CGS
Z952

Abstract: c144 1S84 C144 e 5v CY7C144 CY7C145 IDT7005
Text: ) c144 -7 ALL INPUT PULSES OUTPUTO- 30 pF 3.0V GND }fi3%-V0% io% Y X io% < 3 ns Load (Load 2) < 3 ns c144 -9 Switching Characteristics Over the Operating Range[9] Parameter Description 7C144-15 , Respective Manufacturer ^pNl- CY7C145 «a*^- CY7C144 "i^mm jr Li r ^ h J- Switching Characteristics Over , By Its Respective Manufacturer ^pNl- CY7C145 «a*^- CY7C144 "i^mm jr LÎH höö■Switching , Copyrighted By Its Respective Manufacturer "'jüüiiüm W L.-'ï 1"' r* CY7C145 CY7C144 Switching


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PDF CY7C144) CY7C145) 65-micron 68-pin 64-pin 80-pin Z952 c144 1S84 C144 e 5v CY7C144 CY7C145 IDT7005
c1449

Abstract: C144 ESS CY7C144 CY7C145 IDT7005 1BHC
Text: ) Three-State Delay (Load 3) c144 -7 ALL INPUT PULSES OUTPUTO- 30 pF 3.0V GND }fi3%-V0% io% Y X io% < 3 ns Load (Load 2) < 3 ns c144 -9 Switching Characteristics Over the Operating Range[9] Parameter Description , jr Li r ^ h J- Switching Characteristics Over the Operating Range[9] (continued) Parameter , . 7 ^pNl- CY7C145 «a*^- CY7C144 "i^mm jr LÎH höö■Switching Waveforms Read Cycle No. 1 (Either , port. 20. CEl = CEr = LOW. 8 "'jüüiiüm W L.-'ï 1"' r* CY7C145 CY7C144 Switching Waveforms


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PDF CY7C145 CY7C144 CY7C144) CY7C145) 65-micron 68-pin 64-pin 80-pin IDT7005/IDT7015 c1449 C144 ESS IDT7005 1BHC
2005 - transistor c144

Abstract: C144 transistor SWITCHING TRANSISTOR C144 ntd20n06hdl Meggitt CGS C144 ESR SWITCHING TRANSISTOR C145 C152 C153 MC34702
Text: switching converter uses a DC/DC synchronous buck topology with integrated power switches and control , transistor . An external sense resistor gives flexibility for selecting the desired maximum current , C144 22 µF +5.0 V VOUT C149 100 µF VIN1 C145 10 µF 10 nF C158 4.7 µF C150 , C1206C475K4PAC Murata or other C144 , C148, C151, C161 22 µF, ceramic, X7R or X5R, Low ESR, 10 V , board layout when designing high switching frequency power supplies. We strongly recommend the


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PDF AN3101 MC34702 MPC8260 MPC8260 transistor c144 C144 transistor SWITCHING TRANSISTOR C144 ntd20n06hdl Meggitt CGS C144 ESR SWITCHING TRANSISTOR C145 C152 C153
1996 - SWITCHING TRANSISTOR C144

Abstract: C143 Transistor Ic C 141 C143 E S e transistor transistor c143 C143 T transistor C-145 CPV362MF ge c147 C143 E S j transistor
Text: Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor , See Fig. 13 1.6 IC = 8.0A, T J = 150°C ±500 nA VGE = ±20V Switching Characteristics @ T = 25 , Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance , Transient Thermal Impedance, Junction-to-Case C-144 To Order 10 Previous Datasheet Index


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PDF CPV362MF 10kHz) 360Vdc, 13-pin) C-148 SWITCHING TRANSISTOR C144 C143 Transistor Ic C 141 C143 E S e transistor transistor c143 C143 T transistor C-145 CPV362MF ge c147 C143 E S j transistor
1996 - SWITCHING TRANSISTOR C144

Abstract: C143 T transistor C143 E S S transistor SWITCHING TRANSISTOR C145 C143 E S e transistor transistor c143 ge c147 C143 E S j transistor C143 E S X transistor c143 transistor
Text: more efficient than comparable bipolar transistor modules, while at the same time having the simpler , J = 150°C ±500 nA VGE = ±20V Switching Characteristics @ T = 25°C (unless otherwise specified , Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse , Thermal Impedance, Junction-to-Case C-144 10 CPV362MF 700 500 Coes 12 300 200


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PDF CPV362MF 10kHz) 360Vdc, 13-pin) C-148 SWITCHING TRANSISTOR C144 C143 T transistor C143 E S S transistor SWITCHING TRANSISTOR C145 C143 E S e transistor transistor c143 ge c147 C143 E S j transistor C143 E S X transistor c143 transistor
2005 - SWITCHING TRANSISTOR C144

Abstract: C144 TRANSISTOR TRANSISTOR C144 AN1989 C144 TRANSISTOR RESISTOR C144 IRL2703S Meggitt CGS MC34701 10THB100ML
Text: Semiconductor, Inc., 2005. All rights reserved. Overview 1 Overview The switching converter uses a , linear voltage regulator controller provides the gate control for an external pass transistor . An , -F S I V IN F S I (Eq. 6) Where: FS is the switching frequency VIN is the maximum input , The switching frequency is 300 kHz · Switcher inductor current ripple is 1.0 A · Input voltage VIN , VIN2 C141 10 µF C142 4.7 µF C144 22 µF +5.0 V VOUT C149 100 µF VIN1 C145 10 µF


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PDF AN1989 MC34701 MC34702 MC34702 SWITCHING TRANSISTOR C144 C144 TRANSISTOR TRANSISTOR C144 AN1989 C144 TRANSISTOR RESISTOR C144 IRL2703S Meggitt CGS 10THB100ML
General electric SCR

Abstract: General electric SCR manual GE SCR Manual GE SCR 1000 AMP C141C inverter manual dv 700 scr inverter General electric SCR manual c141 SCR Manual, General electric C144
Text: AMPERES GE TYPE C234, C235 C138(1) C139 C140 C141 C144 JEDEC - - - 2N3649-53 2N3654-58 - , semiconductor devices designed primarily for high-frequency power switching applications which require blocking , commutated applications (phase control, AC switching ) at power line frequencies, up to 35 amperes RMS, the , Series (250 amp) Fast Recovery Diode 160.35 C140 Series (35A) 50-400V High Speed SCR 160.39 C144 Series , Switching at High Frequencies" 660.14 "Basic Magnetic Functions in Converters and Inverters Including New


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PDF 2N3649-53 2N3654-58 General electric SCR General electric SCR manual GE SCR Manual GE SCR 1000 AMP C141C inverter manual dv 700 scr inverter General electric SCR manual c141 SCR Manual, General electric C144
General electric SCR

Abstract: General electric SCR manual SCR Inverter c-141 General electric SCR manual c141 c141c IC-141 GE SCR Manual scr c385 GE 12 volt 25 amp scr power supply
Text: INVERTER SCR's 25 TO 35 AMPERES GE TYPE C234, C235 C138(1) C139 C140 C141 C144 , thyristor semiconductor devices designed primarily for high-frequency power switching applications which , kHz. For line commutated applications (phase control, AC switching ) at power line frequencies, up to , Series (250 amp) Fast Recovery Diode 160.35 C140 Series (35A) 50-400V High Speed SCR 160.39 C144 Series , Switching at High Frequencies" 660.14 "Basic Magnetic Functions in Converters and Inverters Including New


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PDF 2N3649-53 2N3654-58 General electric SCR General electric SCR manual SCR Inverter c-141 General electric SCR manual c141 c141c IC-141 GE SCR Manual scr c385 GE 12 volt 25 amp scr power supply
2006 - transistor c915

Abstract: transistor c925 5.1channel subwoofer amplifier transistor c923 U902 kwang sung power inductor c901 transistor 470nF 0603 50V TRANSISTOR BC 550 c901 SWITCHING TRANSISTOR C144
Text: /Conditions Idle, All Channels Switching 5x30 W, 6 ohm + 1x60 W, 3 ohm (1/8 power) 2x30 W, 6 ohm 37 °C , 1 OUT_E C144 470nF 63V 1 GND PWM_F 2 1 GND C129 270uF 50V C109 0805 , C913 C120 C121 C122 C123 C126 C127 C128 C129 C130 C131 1 C142 5 C140 C141 C143 C144 C145 , /Ferrite Inductor 1A/40V Schottky Diode (SMA) 600mA/40V NPN Small signal Transistor (SOT-23) 800mA/40V PNP Small signal Transistor (SOT-23) 6 ch PWM processor (SE, VOL, 192kHz, I2S out) (TSSOP38) 6 ch


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PDF SLEA054 TAS5086-5186V6EVM TAS5086DBT TAS5186ADDV, 32-bit 24-bit TAS5186ADDV 5012pcb transistor c915 transistor c925 5.1channel subwoofer amplifier transistor c923 U902 kwang sung power inductor c901 transistor 470nF 0603 50V TRANSISTOR BC 550 c901 SWITCHING TRANSISTOR C144
C144 DIGITAL NPN TRANSISTOR

Abstract: transistor c143 C144 transistor SWITCHING TRANSISTOR C144 K3NC-NB1A C143 transistor transistor c144 C144* transistor c144 equivalent transistor XM2A-3701
Text: rated load switching frequency of 1,800 times/hr) Transistor Output Rated load voltage 12 to 24 , outputs: relay, transistor , BCD, linear, or communications. · Prescale function available, which , : SPDT) T1: 5 comparative transistor outputs (NPN open collector) T2: 5 comparative transistor outputs (PNP open collector) B2: BCD output (NPN open collector) (see note) B4: BCD output + 5 transistor , note) Linear output (1 mV/10 digits) (see note) Linear output, 4 to 20 mA + 5 transistor outputs (NPN


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PDF 50-kHz EN61010-1 IEC1010-1) C-153 C144 DIGITAL NPN TRANSISTOR transistor c143 C144 transistor SWITCHING TRANSISTOR C144 K3NC-NB1A C143 transistor transistor c144 C144* transistor c144 equivalent transistor XM2A-3701
1RF7319

Abstract: IRF7319 IRF7319 0 MOSFET ior 144
Text: on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device , C-144 International IOR Rectifier Electrical Characteristics @ Tj = 25°C (unless otherwise


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PDF IRF7319 C-150 Fig20. C-151 1RF7319 IRF7319 IRF7319 0 MOSFET ior 144
C144 TRANSISTOR RESISTOR

Abstract: SWITCHING TRANSISTOR C144 C144 SA1620 SA1620BE SA1638 LNA21 philips gmsk
Text: 1000 HP C144 Capacitor at pin VREG2 0.1 to 500 pF BW6 Vbatt = 3.3V, lREG1 = 0.1mA 0.03 kHz VBATT , Recommended input amplitude between pins LO IN and LO I NX 100 150 250 mV Asat Transistor saturation limit , . The companson frequency of the SA1638 PLL is high'in order to provide fast switching time. With , external filters dunng production of the receiver equipment. After software calibration switching from one , performance indicated in Table 6 over an IF range of 250 to 500MHz. The mixer is operating in switching mode


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PDF SA1620 SA1620 70MHz 500MHz. 950MHz 10MHz DCS1800TX DCS1800 200kHz C144 TRANSISTOR RESISTOR SWITCHING TRANSISTOR C144 C144 SA1620BE SA1638 LNA21 philips gmsk
Not Available

Abstract: No abstract text available
Text: s id e B U S Y w ill be a s s e rte d 12 C144 - CY7C145 CY7C144 Switching Waveforms , Equivalent (Load 1) (a) Normal Load (Loadl) (c) Three-State Delay (Load 3) C144 -7 ALL INPUT PULSES , Load (Load 2) C 144-9 Switching Characteristics Over the Operating R ange[9] 7C144-15 , Switching Characteristics Over the Operating R a n g e d (continued) 7C144-15 7C145-15 Parameter , . T est c o n d itio n s use d a re L o a d 2. 7 CY7C145 CY7C144 Switching Waveforms Read


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PDF CY7C144) CY7C145) 65-micron 68-pin 64-pin 80-pin
uc IR for Tx, RX

Abstract: GSM Transceiver 1994
Text: £-50 £-25 tbd £-30 IlNTOI, llN T 02 IvREGlMAX5 l VR EG 2M AX5 C13" C144 BW6 V b a tt = , LO IN X Transistor saturation limit, max input amplitude Input impedance Input power Recommended , provide fast switching time. With suitable choice of the IF, an identical SA1638 IF receiver design can be , . After software calibration switching from one dynamic range to another will cause only minor errors , of 250 to 500MHz. The mixer is operating in switching mode by well matched 0° and 90° LO signals


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PDF SA1620 70MHz 900MHz. SA1620 32dable DCS1800 10MHz 200kHz uc IR for Tx, RX GSM Transceiver 1994
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