The Datasheet Archive

STD3N25 datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
STD3N25 STD3N25 ECAD Model STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
STD3N25 STD3N25 ECAD Model STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
STD3N25-1 STD3N25-1 ECAD Model STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
STD3N25T4 STD3N25T4 ECAD Model STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
STD3N25T4 STD3N25T4 ECAD Model STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF

STD3N25 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1994 - schematic diagram Electronic Ballast 236

Abstract: STD3N25
Text: STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS s s s s s s s R DS( on) ID 250 V STD3N25 < 2 3A TYPICAL RDS(on) = 1 AVALANCHE RUGGED , ) Pulse width limited by safe operating area January 1995 1/10 STD3N25 THERMAL DATA R thj-cas , 500 100 20 pF pF pF STD3N25 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol , by safe operating area Safe Operating Area Thermal Impedance 3/10 STD3N25 Derating


Original
PDF STD3N25 100oC O-251) O-252) schematic diagram Electronic Ballast 236 STD3N25
1994 - STD3N25

Abstract: No abstract text available
Text: STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS s s s s s s s ID 250 V STD3N25 R DS(on) <2 3A TYPICAL RDS(on) = 1 AVALANCHE RUGGED , ) Pulse width limited by safe operating area January 1995 1/10 STD3N25 THERMAL DATA R thj-case , pF pF pF STD3N25 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr , operating area Safe Operating Area Thermal Impedance 3/10 STD3N25 Derating Curve Output


Original
PDF STD3N25 100oC O-251) O-252) STD3N25
3l4 diode

Abstract: No abstract text available
Text: ) 250 V STD3N25 Id <2 0. 3 A ■. . . . TYPICAL R ds(oii) = 1 £ 2 AVALANCHE , width limited by safe operating area 1/10 January 1995 7 ^ 237 D07SSE7 4Tb STD3N25 , 60 10 33 2 ■Max. Unit S 500 100 20 PF PF PF STD3N25 ELECTRICAL , CBieftoBiLBe¥Re#sies 7^2^237 GG72S2E 2 7 ^ ì 10"3 IQ"2 10_1 ip (s) 3/10 STD3N25 Derating , On Resistance Gate Charge vs Gate-source Voltage 7 ^2 3 7 0072530 TIO STD3N25


OCR Scan
PDF STD3N25 O-251) O-252) O-251 O-252 0068772-B 3l4 diode
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