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Part Manufacturer Description Datasheet Download Buy Part
LT3519EMS-1#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519EMS-1#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519EMS#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519IMS#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519IMS-2#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519IMS-2#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C

ST Low Forward Voltage Schottky Diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - Not Available

Abstract:
Text: forward voltage drop meaning very small conduction losses Low dynamic losses as a result of the Schottky , diode ) Parameter Repetitive peak reverse voltage RMS forward voltage Average forward current TO , 50 Figure 11. Forward voltage drop versus forward current (maximum values, per diode ) Figure 12 , STPS10L45C Low drop power Schottky rectifier Main product characteristics IF(AV) VRRM Tj (max , . Max. 0.15 45 90 0.53 0.46 0.67 0.59 V Unit mA mA VF(1) Forward voltage drop 1. Pulse test: tp


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PDF STPS10L45C O-220FPAB STPS10L45CG STPS10L45CR O-220AB, O-220FPAB, STPS10L45CR STPS10L45C
2013 - Not Available

Abstract:
Text: . Forward voltage drop versus forward current (typical values, low level, per diode ) current (typical , STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode . It is , diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at , peak reverse voltage VRRM IF(RMS) IF(AV) Forward rms current (1) Average forward current


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PDF STPSC10TH13TI DocID024699
2013 - Not Available

Abstract:
Text: forward current (typical values, low level, per diode ) current (typical values, high level, per diode , STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode . It is , diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at , A Repetitive peak reverse voltage VRRM IF(RMS) IF(AV) Forward rms current (1) Average


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PDF STPSC8TH13TI DocID024698
2013 - Not Available

Abstract:
Text: Figure 2. Forward voltage drop versus forward current (typical values, low level, per diode ) current , STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data , performance power Schottky diode . It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky , IF(RMS) 650 Repetitive peak reverse voltage Forward rms current (1) A Tstg 60 52


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PDF STPSC12H065C O-220AB STPSC12H065CT DocID024809
2007 - Not Available

Abstract:
Text: STPS20L40C Low drop power Schottky rectifier Main product characteristics A1 K IF(AV) VRRM Tj (max) VF(max) 2 x 10 A 40 V 150° C 0.5 V A2 Features and benefits Low forward voltage drop meaning very small conduction losses Low dynamic losses as a result of the schottky barrier , ) 100 1 2 5 10 Figure 9. Forward voltage drop versus forward current (maximum values) (per diode , mode power supplies and DC to DC converters. These devices are intended for use in low voltage , high


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PDF STPS20L40C O-220FPAB
2007 - ST make meaning

Abstract:
Text: Low dynamic losses as a result of the schottky barrier Insulated package: TO-220FPAB insulating voltage = 200 V DC capacitance = 12 pF A2 K A1 Low forward voltage drop meaning very , voltage 30 A IF(AV) Average forward current Tc = 115° C Per diode = 0.5 Per device 10 , STPS20L40C Low drop power Schottky rectifier Main product characteristics A1 K IF(AV) 2 x , to DC converters. These devices are intended for use in low voltage , high frequency inverters


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PDF STPS20L40C O-220FPAB STPS20L40CFP ST make meaning ST Low Forward Voltage Schottky Diode STPS20L40CFP DF2-L2 JESD97 STPS20L40C
2013 - Not Available

Abstract:
Text: Figure 2. Forward voltage drop versus forward current (typical values, low level, per diode ) current , STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description , power Schottky diode . It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction , IF(RMS) 650 Repetitive peak reverse voltage Forward rms current (1) A Tstg 38 35


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PDF STPSC8H065C O-220AB STPSC8H065CT DocID024808
2013 - Not Available

Abstract:
Text: versus forward Figure 2. Forward voltage drop versus forward current (typical values, low level, per , STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode . It is , diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at , A Repetitive peak reverse voltage VRRM IF(RMS) IF(AV) Forward rms current (1) Average


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PDF STPSC6TH13TI DocID024696
2013 - Not Available

Abstract:
Text: voltage drop versus forward current (typical values, low level, per diode ) current (typical values, high , STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data , performance power Schottky diode . It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky , IF(RMS) 650 Repetitive peak reverse voltage Forward rms current (1) A Tstg 75 69


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PDF STPSC16H065C O-220AB STPSC16H065CT DocID024810
2014 - Not Available

Abstract:
Text: versus forward current (typical values, low level, per diode ) current (typical values, high level, per , STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data , performance power Schottky diode . It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky , IF(RMS) 650 Repetitive peak reverse voltage Forward rms current (1) V A Tc = 140 °C


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PDF STPSC16H065C O-220AB STPSC16H065CT DocID024810
2007 - Not Available

Abstract:
Text: and benefits I Low forward voltage drop meaning very small conduction losses I Low dynamic losses as a result of the schottky barrier I Insulated package: TO-220FPAB insulating voltage = , voltage 30 A IF(AV) Average forward current Tc = 115° C Per diode δ = 0.5 Per device , 0.1 0.0 5 Forward voltage drop versus forward current (maximum values) (per diode ) 1.0 , STPS20L40C Low drop power Schottky rectifier Main product characteristics A1 K IF(AV) 2 x


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PDF STPS20L40C O-220FPAB STPS20L40CFP
2011 - 4dfs30l

Abstract:
Text: I Low threshold gate drive I Integrated SCHOTTKY rectifier S0-8 Applications I 1 , N-channel Power MOSFET. It associates the latest low voltage STripFET™ in Nchannel version to a low drop Schottky diode . Such configuration is extremely versatile in implementing, a large variety of DC-DC , Schottky absolute maximum ratings Parameter Value Unit VRRM Repetitive peak reverse voltage , resistance vs. temperature Figure 12. Source-drain diode forward characteristics Doc ID 8566 Rev 5


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PDF STS4DNFS30L 4dfs30l
2011 - 4dfs30l

Abstract:
Text: Description This device is an N-channel Power MOSFET. It associates the latest low voltage STripFETTM in Nchannel version to a low drop Schottky diode . Such configuration is extremely versatile in implementing, a , Standard outline for easy automated surface mount assembly Low threshold gate drive Integrated SCHOTTKY , Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward , ) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, VGS =


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PDF STS4DNFS30L 4dfs30l STS4DNFS30L
2005 - AN2239

Abstract:
Text: Voltage (BV DSS) vs. Current Figure 5. 2 Why Use an Integrated Schottky Diode ? Forward Voltage , , the Schottky diode is assisted by a low rDS(on), synchronized MOSFET, or is even replaced by the , diode turn-on and reverse recovery losses. Schottky diodes are faster and have lower drop voltage , forward voltage ; IL = Diode current; and f = frequency Figure 1. In Synchronized Buck Converter , time the high-side MOSFET is turned ON, the low side diode ( Schottky or the integrated MOSFET body


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PDF AN2239 AN2239 MOSFET and parallel Schottky diode schottky diode 16a 12v DIODE schottky diode schottky 16A high power pulse generator with mosfet STS12NH3LL STS20NHS3LL STS25NH3LL
2002 - SOT323-3L

Abstract:
Text: -04WFILM Status NRND Product Page/ Datasheet Description LOW CAPACTITANCE DETECTION DIODE Diodes| Schottky Barrier , ® STDD15 series LOW CAPACITANCE DETECTION DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj , -6L STDD15-xxS s s s Low diode capacitance Device designed for RF application Low profile package , Tstg Tj Parameter Repetitive peak reverse voltage Continuous forward current Surge non repetitive , current Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C V F* Forward voltage drop Tj = 25°C Tj


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PDF STDD15 OT323-3L STDD15-xxW OT323-6L STDD15-xxS STDD15-04W OT323 STDD15-05WFILM SOT323-3L
2001 - bat46

Abstract:
Text: * Pulse test: tp 300µs < 2%. 2/4 BAT46 Fig. 1-1: Forward voltage drop versus forward current ( low level, typical values) Fig. 1-2: Forward voltage drop versus forward current (high level, typical , ® BAT46 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metalto silicon diode featuring high breakdown voltage low turn-on voltage . ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Ptot Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current


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PDF BAT46 DO-35 BAT46 BAT46AFILM BAT46AWFILM BAT46CFILM BAT46FILM BAT46JFILM BAT46SFILM BAT46S
1999 - marking 5 melf -diode glass

Abstract:
Text: . Unit pF August 1999 Ed 1A 1/4 TMBAT 49 Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Forward current versus forward voltage at high level (typical , ® TMBAT 49 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against , IF IFRM IFSM Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current


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PDF TMBAT49FILM TMBAT49 marking 5 melf -diode glass
IXAN0039

Abstract:
Text: holes from this p-type layer are low forward voltage drop. Moreover, it has the injected into the , Germany; knigge@fbh-berlin.de Abstract A new 600V GaAs Power Schottky diode is compared with Si and , Schottky diodes can be temperature dependency, but have the highest divided into low barrier devices ("pure" Schottky VF at high currents. The 2 st nd Generation GaAs diodes, which we also , Low Forward be optimised in a real application. A PFC board design has to find an optimal trade


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PDF IXAN0039 D-12489 D-86161 IXAN0039 New Generation of 600V GaAs Schottky Diodes for High Power Density PFC Applications Schottky diode TO220 diode schottky 600v MOSFET and parallel Schottky diode schottky diode 100A Diode schottky 29 DGSS10-06CC very high current schottky diode
Not Available

Abstract:
Text: -22ÛAB STPS20L40CT FEATURES AND BENEFITS ■LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES ■LOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER ■AVALANCHE RATED DESCRIPTION A1 , ) 3/6 ST PS20L40C F/CW/CT Fig. 7 : Forward voltage drop versus forward current (maximum values , STPS20L40CF/CW/CT LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I f (a v , use in low voltage , high frequency inverters, free-wheeling and polarity protection applications


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PDF STPS20L40CF/CW/CT STPS20L40CT ISOWATT220AB STPS20L40CF O-247 STPS20L40CW
2012 - STPSC4H065

Abstract:
Text: current (typical values, low level) 40 36 32 Ta=25 °C Forward voltage drop versus forward current , STPSC4H065 650 V power Schottky silicon carbide diode Datasheet production data Features , capability A K K Description The SiC diode is an ultrahigh performance power Schottky diode . It , Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at , temperature. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in


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PDF STPSC4H065 STPSC4H065
2007 - u34 schottky diode ST

Abstract:
Text: small conduction losses Negligible switching losses Low forward voltage drop Low thermal resistance , device is intended for use in low and medium voltage operation, high frequency inverters, free wheeling , voltage RMS forward current Tc = 135° C = 0.5 DPAK DPAK SMB/SMC SMB flat 75 1300 -65 to + 150 (1 , = 3 A 0.52 0.57 V 0.84 IF = 6 A 0.63 0.72 Unit µA mA VF(1) Forward voltage drop Tj = 125° C , Figure 1. Average forward power dissipation Figure 2. versus average forward current (per diode ) IF


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PDF STPS340 STPS340B STPS340U STPS340S STPS340UF STPS340 u34 schottky diode ST st s34 schottky diode u34 diode ST s34 schottky diode marking U34 st e u34 st u34 u34 st ST S340 s340 diode
2012 - PS40SM120CTN

Abstract:
Text: K High current capability Avalanche rated Low forward voltage drop High frequency operation Description This Schottky diode is suited for high frequency switch mode power supply. Packaged in TO , ) Forward voltage drop versus forward current (per diode ) Figure 9. Reverse safe operating area (tp , values per diode at Tamb = 25 °C, unless otherwise specified) Parameter Repetitive peak reverse voltage , ) Forward voltage drop 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 µs, < 2% To evaluate


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PDF STPS40SM120C O-220AB, O-220AB STPS40SM120CR STPS40SM120CTN STPS40SM120CT PS40SM120CTN STPS40SM120CR
2012 - Not Available

Abstract:
Text: Characteristics Figure 1. Forward voltage drop versus Figure 2. forward current (typical values, low level , STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Features , SiC diode is an ultrahigh performance power Schottky diode . It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 650 V rating , PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high


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PDF STPSC6H065 O-220AC STPSC6H065D
2012 - PS40M120CT

Abstract:
Text: High current capability Avalanche rated Low forward voltage drop High frequency operation Description This Schottky diode is suited for high frequency switch mode power supply. Packaged in TO , . IFM(A) Forward voltage drop versus forward current (per diode ) Figure 9. Reverse safe , values per diode at Tamb = 25 °C, unless otherwise specified) Parameter Repetitive peak reverse voltage , ) Forward voltage drop 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 µs, < 2% To evaluate


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PDF STPS40M120C O-220AB, O-220AB STPS40M120CR STPS40M120CTN STPS40M120CT PS40M120CT STPS40M120CR
2012 - Not Available

Abstract:
Text: current capability I Avalanche rated I Low forward voltage drop I High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency switch , ) Forward rms current 30 A IF(AV) Average forward current, δ = 0.5 IFSM Per diode Tc = , Typ. 25 70 mA Tj = 125 °C VF(2) - 0.44 0.49 Tj = 125 °C Forward voltage , diode ) PF(AV)(W) 24 Average forward current versus ambient temperature (δ = 0.5, per diode


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PDF STPS40M120C O-220AB, O-220AB STPS40M120CR STPS40M120CTN O-220AB STPS40M120CT
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