The Datasheet Archive

ST IRF640 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - IRF640

Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
Text: IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlayTM Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18 18A IRF640FP 200V <0.18 , Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Contents IRF640 - IRF640FP Contents 1 Electrical , so Ob - ro P s) t( IRF640 - IRF640FP 1 Electrical ratings Electrical ratings


Original
PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
2006 - IRF640

Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
Text: IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlayTM Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18 18A IRF640FP 200V <0.18 , Package Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Contents IRF640 - IRF640FP Contents 1 , . . . . . . . . . . 13 2/14 . 9 IRF640 -


Original
PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
1997 - SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Text: 2SK1402 2SK1405 ST REPLACEMENT ST NEAREST PREFERRED STP4NA100 STW7NA100 STD2NA50 STD2N50 , 2SK1869 2SK1910 2SK1911 ST REPLACEMENT STW10NA50 STY15NA100 STW10NA50 STW20NB50 STW20NB50 , 2SK2059 2SK2078 2SK2097 2SK2114 2SK2115 ST NEAREST PREFERRED STP5NA60FI STB50N06L IRF540 , -800A BUK438-800B BUK442-100A BUK442-100B 2/11 ST REPLACEMENT ST NEAREST PREFERRED STP8NA50FI , STW6NA80 STW4NA100 IRF640 STP9N30 STP15N06L STP21N06L STP36N06L STE38NA50 STP50N06L STW10NA50


Original
PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
1999 - irf640

Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
Text: ® IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET TYPE IRF640 IRF640F P s s s s V DSS 200 V 200 V R DS(on) < 0.18 < 0.18 ID 18 A 18 A TYPICAL RDS , Ts tg Tj Parameter IRF640 Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k ) G , Characterized in this Datasheet (*) Limited only by Maximum Temperature Allowed July 1999 1/9 IRF640 , . 4 1200 200 60 1560 260 80 Max. Unit S pF pF pF 2/9 IRF640 /FP ELECTRICAL CHARACTERISTICS


Original
PDF IRF640 IRF640FP O-220/TO-220FP IRF640F O-220 O-220FP IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp stmicroelectronics datecode TO-220 0118mm
1999 - power MOSFET IRF640 fp

Abstract: irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE V DSS R DS(on) ID IRF640 IRF640FP 200 V 200 V < 0.18 < 0.18 18 A 18 A , Symbol Parameter Value IRF640 V DS V DGR V GS Unit IRF640FP Drain-source Voltage (V GS , IRF640 /FP THERMAL DATA TO-220 R thj-case Thermal Resistance Junction-case R thj-amb R thc-sink , 80 pF pF pF IRF640 /FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Typ


Original
PDF IRF640 IRF640FP O-220/TO-220FP O-220 power MOSFET IRF640 fp irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
1998 - irf640

Abstract: IRF640FP IRF640 P CHANNEL MOSFET
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P < 0.18 < 0.18 18 , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF640F P Drain-source Voltage , December 1998 1/7 IRF640 /FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl , . Unit S 1560 260 80 pF pF pF IRF640 /FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING


Original
PDF IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET
1999 - irf640

Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF IRF640 morocco IRF640 circuit DI L6 IRF640FP power MOSFET IRF640 fp IRF n CHANNEL MOSFET
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640FP < 0.18 < 0.18 , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF 640F P Drain-source Voltage (V , 1/9 IRF640 /FP THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case R thj , 1560 260 80 pF pF pF IRF640 /FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo


Original
PDF IRF640 IRF640FP O-220/TO-220FP O-220 irf640 IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF IRF640 morocco IRF640 circuit DI L6 IRF640FP power MOSFET IRF640 fp IRF n CHANNEL MOSFET
IRFG43

Abstract: motor driver IRF640
Text: HE 0 I 4055455 0000504 1 | Data Sheet No. PD-9.374F ST - A T INTERNATIONAL RECTIFIER , Product Summary Part Number bvdss R DS(on) IRF640 200V 0 .1 8 0 18A IRF641 150V , -2 5 3 !d IRF640 , 1RF641, IRF642, IRF643 Devices HE D | 4flSS4S5 OOaaSQS Q I , Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance © Type Min. IRF640 IRF642 IRF641 IRF643 IRF640 IRF641 200 Typ. Max. V Q VGS - 10V, l0 >10A A -


OCR Scan
PDF IRFS40 IRFG41 IRF642 IRFG43 T0-220AB IRF640 IRF641 IRF643 C-259 IRFG43 motor driver IRF640
1999 - IRF640

Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P < 0.18 < 0.18 18 , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF640F P Drain-source Voltage , February 1999 1/7 IRF640 /FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl , . Unit S 1560 260 80 pF pF pF IRF640 /FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING


Original
PDF IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
2002 - fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
Text: INFINEON (SIEMENS) TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier , FQD10N20 FQD17N10 FQD20N06 ST Replacement FA IR CH ILD P/N STP10NB20 STP11NB40 , FA IR CH ILD ST Nearest Preferred STD17NE03L STP50NE10 STP5NB40 STP5NC60 STP5NB80 , FQPF7N60 FQPF9N50 FQT6N10L FQU2N50 ST Replacement STN2NE10L STD1NB50 2 FA IR CH ILD P/N ST Nearest Preferred STD2NB25-1 Supplier FAIRCHILD / SAMSUNG STS8NF30L


Original
PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
Not Available

Abstract: No abstract text available
Text: International R e ctifie r p rovid e the d e s ig n e r with th e b e s t co m b in a tio n of fa st sw itch , . Temperature ■IRF640 4055452 0014737 GR4 ■INR bSE D I«R Capacitance (pF , bSE D IRF640 Fig 10a. Switching Time Test Circuit Tc, Case Temperature (°C) Fig 9 , – IRF640 Vary tp to obtain 4055452 INTERNATIONAL □ □ 1 4 7 3 = 1 m ^ b ? i


OCR Scan
PDF 11IRF640
mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: IXTH BUK SSD, SF ST SI 2SK, 2SJ NDT Industry Part Number 2SJ334 2SJ380 2SJ402 2SJ412 , IRF620A IRF624 IRF624A IRF630 IRF630A IRF634 IRF634A IRF640 IRF640A IRF644 IRF644A IRF710 , MTP20N20E MTP9N25E MTP9N25E IRF630 MTP20N20E MTP16N25E MTP16N25E IRF640 MTP20N20E MTP16N25E


Original
PDF
IRF 260 N

Abstract: irf 640 IRF640 F640 TT220 IRF641 irf 80 n
Text: SGS-THOMSON ELiOT@KS IRF IRF 640 /FI 641/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF640 IRF640FI IRF641 IRF641FI V dss R D S (on) Id 18 A 10 A 18 A 10 A 200 V 200 V 150 V 150 V 0.18 n 0.18 n 0.18 a 0.18 n . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 2000V DC , gs = 10 V = Max Rating x 0.8 (see te st circuit) Min. Typ. 50 90 85 60 65 Max. 65 120 1 10


OCR Scan
PDF 641/FI IRF640 IRF640FI IRF641 IRF641FI O-220 ATT220 640/FI 640/FI-64 IRF 260 N irf 640 F640 TT220 irf 80 n
1999 - IRF9310

Abstract: mosfet cross reference IRF 949 korea IRFZ44 replacement BUZ 36 philips master replacement guide IRF540 substitution 2SK2146 MOSFET TOSHIBA 2SK IRF510 substitution
Text: Reference. Legend Prefix 2SK, 2SJ, YT BUK BUZ FW HAT IRF MT, MG IXTH NDT RF SI, SUD, SUP SSD, SF ST uPA , Number IRF624 ON Semiconductor Replacement MTP9N25E MTP9N25E IRF630 MTP20N20E MTP16N25E MTP16N25E IRF640 , IRF640 IRF640A IRF644 IRF644A IRF710 IRF7101 IRF7102 IRF7103 IRF7104 IRF7105 IRF7106 IRF7107 IRF710A , . . . . . (63)2 807­8455 FLORIDA St . Petersberg . . . . . . . . . . . . . . (813)524­4177


Original
PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference IRF 949 korea IRFZ44 replacement BUZ 36 philips master replacement guide IRF540 substitution 2SK2146 MOSFET TOSHIBA 2SK IRF510 substitution
RF640

Abstract: IRF 640
Text: *57 TY PE S G S -T H O M S O N !LiO T® iQ (£I i r F 640 IR F 6 4 0 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss RDS(on) Id IRF640 IRF640FI 200 V 200 V < 0.18 £2 , A VA L ANC H E CHAR A C TE R I ST I C S Symbol Iar E as E ar Iar Par a me t e r A v a la n c h e C , b y T j m ax, S < 1%) Max Va l ue 18 50 10 11 Uni t A mJ mJ A ELECTRI CAL CH AR A C TE R I ST I , RF64 0/ FI ELECTRI CAL CH AR A C TE R I ST I CS (continued) SWITCHING RESISTIVE LOAD Symbol td


OCR Scan
PDF IRF640 IRF640FI IRF640FI RF640 IRF 640
1997 - power MOSFET IRF640

Abstract: "thermal via" PCB D2PAK hexfet irf640 linear applications of power MOSFET IRF640 marking F53 IRF640S AN-994 IRF640 IRF640L
Text: RG = 25, I AS = 18A. (See Figure 11) Uses IRF640 data and test conditions ISD 18A, di/dt , . 4 WORLD HEADQUARTERS: 233 Kansas St ., El Segundo, California 90245, Tel: (310) 322 3331


Original
PDF IRF640S/L IRF640S) IRF640L) power MOSFET IRF640 "thermal via" PCB D2PAK hexfet irf640 linear applications of power MOSFET IRF640 marking F53 IRF640S AN-994 IRF640 IRF640L
2007 - Not Available

Abstract: No abstract text available
Text: IRF640 data and test conditions RG = 25Ω, IAS = 18A. (See Figure 12) ƒ ISD ≤ 18A, di/dt â , 26 .40 (1 .03 9) 24 .40 (.9 61 ) 3 30 .40 (1.19 7) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St


Original
PDF -90902B IRF640S/L IRF640S) IRF640L) 08-Mar-07
2007 - AN-994

Abstract: IRF640 IRF640L IRF640S linear applications of power MOSFET IRF640
Text: 50V, starting TJ = 25°C, L = 2.7mH Uses IRF640 data and test conditions RG = 25, IAS = 18A , ) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St ., El Segundo, California 90245, Tel: (310) 322 3331 IR


Original
PDF -90902B IRF640S/L IRF640S) IRF640L) 12-Mar-07 AN-994 IRF640 IRF640L IRF640S linear applications of power MOSFET IRF640
BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: ZTX600 ZTX600B KBPC602 ZTX603 ZTX605 KBPC608 TYN612 TYN625 IRF630 BC635 BC636 BC637 BC639 BC640 IRF640 , . Anode Cathode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC ST 30 1N4148 signal , -200 DO-201AD: 9.5 x 5.6mm Philips/Temic Schottky power diodes ST /GS Schottky barrier power , 1 1 1 1 3 3 IFSM A 50 40 40 40 80 80 Package DO-41 DO-041 DO-41 DO-41 DO-201AD DO-201AD Manfr. ST ST GS GS GS ST Device BYV10-40 BYV10-60 SB130 SB140 SB330 1N5820 Order code BYV27-200 1+ 100


Original
PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
1999 - irf640s

Abstract: IRF640 IRF640L AN-994 ST IRF640
Text: , starting TJ = 25°C, L = 2.7mH Uses IRF640 data and test conditions RG = 25, IAS = 18A. (See Figure , 30 .40 (1.19 7) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St ., El Segundo, California 90245, Tel


Original
PDF -90902B IRF640S/L IRF640S) IRF640L) irf640s IRF640 IRF640L AN-994 ST IRF640
2003 - AN-994

Abstract: IRF640 IRF640L IRF640S sec irf640
Text: Uses IRF640 data and test conditions RG = 25, IAS = 18A. (See Figure 12) ISD 18A, di/dt 150A , HEADQUARTERS: 233 Kansas St ., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green


Original
PDF -90902B IRF640S/L IRF640S) IRF640L) AN-994 IRF640 IRF640L IRF640S sec irf640
RF640

Abstract: No abstract text available
Text: , © Pulse width <300ns; duty cycle < 2%. © Uses IRF640 dataand test conditions T j < 150°C * When , OUTER EDGE. International XOR Rectifier WORLD HEADQUARTERS: 233 Kansas St ., El Segundo, California


OCR Scan
PDF RF640S) IRF640L) IRF640S) RF640
2002 - BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 toshiba l 300 laptop motherboard circuit diagram TRANSISTOR S1A 64 smd
Text: No file text available


Original
PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 toshiba l 300 laptop motherboard circuit diagram TRANSISTOR S1A 64 smd
12v 60W subwoofer CIRCUIT DIAGRAM

Abstract: amidon T200-2 12v 200W subwoofer CIRCUIT DIAGRAM MUR120T3 TA0103A 200w subwoofer circuit 150w mosfet audio amplifier 2 channel 150w audio amplifier circuit diagram T200-2 "subwoofer amplifiers"
Text: IRF640 ST STW38NB20 ST STP19NB20 200 200 200 Qg (Max) (nanoCoulombs) 70 95 40 RDS(ON , 22kHz BW f = 1kHz BBM = 65nS VS = +/-45V Av = 20.75 ST STW38NB20 MOSFET 5 4 0.5 0.2 0.1 20Hz - 22kHz BW f = 1kHz BBM = 65nS Av = 20.75 ST STW38NB20 MOSFET 1 36V 45V 58V 0.1 , 0.1uF Power Output MOSFETs = ST STW38NB20 BBMO=0, BBM1=1 4 TECHNICAL INFORMATION Pin , ST STW38NB20 MOSFET 30 20 10 70 60 50 40 22Hz - 22kHz BW f = 1kHz BBM = 145nS VS = +


Original
PDF TA0103A TA0103A 12v 60W subwoofer CIRCUIT DIAGRAM amidon T200-2 12v 200W subwoofer CIRCUIT DIAGRAM MUR120T3 200w subwoofer circuit 150w mosfet audio amplifier 2 channel 150w audio amplifier circuit diagram T200-2 "subwoofer amplifiers"
12v 60W subwoofer CIRCUIT DIAGRAM

Abstract: 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 200W subwoofer CIRCUIT DIAGRAM TA0103A amidon T200-2 TRIPATH ta0103a MUR120T3 250w audio amplifier circuit diagram diagram for a 12v 250w power amplifier 12v single supply 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Text: the TA0103A: Mfg. Part Number BVdss ST STW34NB20 ST STW38NB20 ST STP19NB20 IR IRF640 200 , ST STW38NB20 MOSFET 5 2 THD+N (%) 1 0.5 0.2 RL= 8 0.1 0.05 RL= 4 0.02 0.01 , 0.22uF, CD = 0.1uF, CIN = 1uF, CBY = 0.1uF Power Output MOSFETs, M = ST STW38NB20 BBMO=0, BBM1 , (%) 5 RL = 4 & 8 100 20Hz - 22kHz BW f = 1kHz BBM = 65nS Vs = +/-54V Av = 20.75 ST , 145nS VS = +/-54V Av = 20.75 ST STW38NB20 MOSFET 30 20 0.05 10 RL= 4 0.02 0


Original
PDF TA0103A TA0103A TA0103 12v 60W subwoofer CIRCUIT DIAGRAM 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 200W subwoofer CIRCUIT DIAGRAM amidon T200-2 TRIPATH ta0103a MUR120T3 250w audio amplifier circuit diagram diagram for a 12v 250w power amplifier 12v single supply 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Supplyframe Tracking Pixel