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Samsung Semiconductor
SSP4N60AS
SSP4N60AS ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics SSP4N60AS 1,100 - - - - - More Info
Fairchild Semiconductor Corporation
SSP4N60AS
SSP4N60AS ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics SSP4N60AS 4,500 - - - - - More Info

SSP4N60A datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
SSP4N60AS SSP4N60AS ECAD Model Fairchild Semiconductor Advanced Power MOSFET Original PDF
SSP4N60AS SSP4N60AS ECAD Model Toshiba Power MOSFETs Cross Reference Guide Original PDF
SSP4N60AS SSP4N60AS ECAD Model Fairchild Semiconductor Advanced Power MOSFET Scan PDF

SSP4N60A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
sss4n60a

Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
Text: IRF820A IRF830A IRF840A SSP1N60A SSP2N60A SSP4N60A SSP7N60A SSP10N60A TO-220 TO-220F Part


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PDF IRF830A IRF830B Power247TM, sss4n60a IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: No file text available


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PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
IGBT M16 100-44

Abstract: GM378 SEMICON INDEXES Ericsson SPO 1410 Kt606 Transistor B0243C ASEA HAFO AB transistor 8BB smd Ericsson RBS 6102 GD243
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 GM378 SEMICON INDEXES Ericsson SPO 1410 Kt606 Transistor B0243C ASEA HAFO AB transistor 8BB smd Ericsson RBS 6102 GD243
AS4A

Abstract: SSP4N60AS SSP4N60A
Text: (Max.) @ VD S= 600V Lower RD S (O N ) : 2.037 £1 (Typ.) SSP4N60AS BV0SS = 600 V RD S (o n ) = 2.5 Q , SSP4N60AS Symbol C haracteristic M in. Typ. Max. Units N-CHANNEL POWER MOSFET Electrical , Charge vs. Gate-Source Voltage 201 ELECTRONICS SSP4N60AS Fig 7. Breakdown Voltage vs , ] 202 ELECTRONICS N-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform SSP4N60AS , g g r * ELECTRONICS 203 SSP4N60AS Fig 15. Peak Diode Recovery dv/dt Test Circuit &


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PDF SSP4N60AS O-220 AS4A SSP4N60AS SSP4N60A
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: No file text available


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
1999 - SSP4N60A

Abstract: SSP4N60AS
Text: SSP4N60AS Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS , Semiconductor Corporation N-CHANNEL POWER MOSFET SSP4N60AS Electrical Characteristics (TC=25oC unless , 4 O N-CHANNEL POWER MOSFET SSP4N60AS Fig 1. Output Characteristics 101 [A] VGS , ) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage SSP4N60AS , N-CHANNEL POWER MOSFET SSP4N60AS Fig 12. Gate Charge Test Circuit & Waveform " Current Regulator "


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PDF SSP4N60AS O-220 SSP4N60A SSP4N60AS
SSP4N60AS

Abstract: SSP4N60A 600V N MOSFET T0-220 diode 2U 14 mosfet yb SSP4N60
Text: Advanced Power MOSFET" SSP4N60AS FEATURES ■Avalanche Rugged Technology ■Rugged Gate , Copyrighted By Its Respective Manufacturer SSP4N60AS N-CHANNEL POWER MOSFET Electrical Characteristics (Tc , Material Copyrighted By Its Respective Manufacturer N-CHANNEL POWER MOSFET SSP4N60AS Figi. Output , Charge [nq :AIRCHILD EMICONDUCTOR" This Material Copyrighted By Its Respective Manufacturer SSP4N60AS , Manufacturer POWER MOSFET" SSP4N60AS Fig 12. Gate Charge Test Circuit & Waveform Current Sampling (IG


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PDF SSP4N60AS T0-220 SSP4N60AS SSP4N60A 600V N MOSFET T0-220 diode 2U 14 mosfet yb SSP4N60
Not Available

Abstract: No abstract text available
Text: SSP4N60AS A d va n ce d Power MOSFET FEATURES B V DS ■Rugged Gate Oxide Technology , Œ Units °C/W N-CHANNEL POWER MOSFET SSP4N60AS Electrical Characteristics (Tc , =4A,Vgs=0V @ N-CHANNEL POWER MOSFET SSP4N60AS Fig 1. Output Characteristics vffi , N-CHANNEL POWER MOSFET SSP4N60AS Fig 12. Gate Charge Test Circuit & Waveform Resistor Resistor , ~ V dd 7=^4142 ÜQ4037S 334 N-CHANNEL POWER MOSFET SSP4N60AS Fig 15. Peak Diode Recovery dv


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PDF SSP4N60AS G04D37b 003b32fl 3b32t O-220 00M1N 7Tb4142 DD3b33D
irf1740

Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Text: SSP2N60A SSP4N60AS SSP7N60A SSP10N60A 600 V 500 V 400 V 250 V 200 V 100 V BV DSS (V) 60 V I 0 (A) 10


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PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
1RFS640A

Abstract: irf530a irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A IRFZ44A SSP45N20A
Text: Device List T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A [RF550A SSP70N10A IRF610A IRF620A IRF630A IRF640A IRF650A SSP45N20A IRF614A IRF624A IRF634A IRF644A IRF654A IRF710A IRF720A IRF730A IRF740A IRF750A SSP1N50A [RF820A IRF830A IRF840A SSP1N60A SSP2N60A SSP4N60AS SSP7N60A SSP10N60A T0-220F IRFSZ14A IRFSZ24A IRFSZ34A IRFSZ44A IRFS510A IRFS520A IRFS530A IRFS540A IRFS550A SSS70N10A IRFS610A IRFS620A IRFS630A 1RFS640A IRFS650A IRFS614A IRFS624A IRFS634A IRFS644A IRFS654A IRFS710A IRFS720A


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PDF T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A RF550A 1RFS640A irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A SSP45N20A
1999 - ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Text: SSP1N60A SSP2N60A SSP2N80A SSP2N90A SSP3N80A SSP3N90A SSP45N20A SSP4N60AS SSP4N80A SSP4N80AS


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PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
SSD2104

Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
Text: SSP4N60AS SSP7N60A SSP10N60A 600 V 500 V 400 V 250 V 200 V 100 V BV DSS I D R DS(on) c


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PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A SSD2104 irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: SSD2005 SSD2007 SSD2009 SSP1N50A SSP1N60A SSP2N60A SSP2N80A SSP3N80A SSP4N60AS SSP4N80A


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PDF
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Not Available

Abstract: No abstract text available
Text: Advanced SSP4N60AS Power MOSFET FEATURES BVDSS - ■Avalanche Rugged , rp o ra tio n Units °C/W N-CHANNEL POWERMOSFET SSP4N60AS Electrical Characteristics , Voltage Q , Total Cite Charge [nQ FAIRCHILD SEM ICONDUCTOR N-CHANNEL POWERMOSFET SSP4N60AS , Pulse Duration [sec] PwZ o ^ oC SSP4N60AS Fig 12. Gate Charge Test Circuit & Waveform , SEM ICONDUCTOR BVD S S N-CHANNEL POWERMOSFET SSP4N60AS Fig 15. Peak Diode Recovery dv/dt


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PDF SSP4N60AS
1999 - IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Text: SSP2N60A SSP2N80A SSP3N80A SSP4N60AS SSP4N80A SSP4N80AS SSP7N60A SSR1N50 SSR1N50A SSR1N60A SSR2955 SSR3055A


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PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
600V 2A MOSFET N-channel

Abstract: No abstract text available
Text: Advanced Power MOSFET FEATURES SSP4N60AS B V d ss " 600 V 2 .5 Q . Avalanche Rugged , Typ. - Max. 1.25 62.5 Units TC/W 0.5 - 583 ELECTRONICS SSP4N60AS Electrical , Characteristics SSP4N60AS Fig 2. Transfer Characteristics Fig 3. On-Resistance vs. Drain Current Fig 4 , . Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 585 ELECTRONICS SSP4N60AS Fig 7 , ELECTRONICS N-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform SSP4N60AS " C u r r


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PDF SSP4N60AS O-220 600V 2A MOSFET N-channel
2002 - FQP630

Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
Text: - - SSP2N60A 600 Single use SSP2N60B - - - - - - SSP4N60AS


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PDF O-220 O-220 ISL9N302AP3 FDP8030L ISL9N303AP3 FDP7045L ISL9N304AP3 FDP6676 FDP6670AL SFP9Z24 FQP630 FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
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