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SS8550 D 331 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - SS8550 cross reference

Abstract: ss8550 TRANSISTOR SS8550 cross reference ss8550 transistor SS8550 transistor TO-92 SS8050 SS8050 application notes
Text: SS8550 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · , Bandwidth Product hFEClassification Classification hFE2 B 85 ~ 160 C 120 ~ 200 D 160 ~ 300 ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 SS8550 Typical Characteristics -0.5 , SS8550 Package Demensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 , Rev. H3 Product Folder - Fairchild P/N SS8550 - PNP Epitaxial Silicon Transistor SEARCH


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PDF SS8550 SS8050 SS8550 SS8550 cross reference ss8550 TRANSISTOR cross reference ss8550 transistor SS8550 transistor TO-92 SS8050 SS8050 application notes
2001 - transistor TO-92 SS8050

Abstract: ss8550 TRANSISTOR equivalent ss8550 SS8050
Text: SS8550 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8050 · Collector Current: IC=1.5A · Collector Power Dissipation: PC=2W (TC=25°C) TO , Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 SS8550 Typical Characteristics 1000 -0.5 VCE = -1V -0.4 , 2001 SS8550 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 14.47


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PDF SS8550 SS8050 transistor TO-92 SS8050 ss8550 TRANSISTOR equivalent ss8550 SS8050
2002 - SS8050

Abstract: ss8050 equivalent SS8550
Text: SS8550 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8050 · Collector Current: IC=1.5A · Collector Power Dissipation: PC=2W (TC=25°C) TO , Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 SS8550 Typical Characteristics 1000 -0.5 VCE = -1V -0.4 , , November 2002 SS8550 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10


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PDF SS8550 SS8050 SS8050 ss8050 equivalent SS8550
2000 - Not Available

Abstract: No abstract text available
Text: SS8550 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8050 · Collector Current: IC=1.5A · Collector Dissipation: PC=2W (TC=25°C) 1 TO-92 1 , Product hFEClassification Classification hFE2 B 85 ~ 160 C 120 ~ 200 D 160 ~ 300 ©2000 Fairchild Semiconductor International Rev. A, February 2000 SS8550 Typical Characteristics -0.5 1000 , Bandwidth Product ©2000 Fairchild Semiconductor International Rev. A, February 2000 SS8550


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PDF SS8550 SS8050
2007 - ss8550 TRANSISTOR equivalent

Abstract: transistor SS8550 SS8550D 800ma ss8550 transistor ss8550d SS8550 transistor SS8550C Transistor TO-92 SS8550D
Text: MCC SS8550 SS8550-C omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM , Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8550 Case , (VEB =5.0Vdc, IC=0) C D ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB DC , DIMENSIONS DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .010 MAX .190 .190 , 3.96 2.64 NOTE D 160-300 www.mccsemi.com Revision: 5 1 of 2 2007/03/02 MCC TM


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PDF SS8550 SS8550-C SS8550-D -55OC ss8550 TRANSISTOR equivalent transistor SS8550 SS8550D 800ma ss8550 transistor ss8550d SS8550 transistor SS8550C Transistor TO-92 SS8550D
2002 - Not Available

Abstract: No abstract text available
Text: !"# SS8550 · · · · · · Features · TO-92 Plastic-Encapsulate Transistors Capable of , storage junction temperature range: -55OC to +150 OC Marking : SS8550 PNP Silicon Transistors TO-92 A , Units Vdc Vdc Vdc uAdc uAdc uAdc D E B OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO , -Vdc Vdc Vdc DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .010 G DIMENSIONS MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 SMALL-SIGNAL CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D


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PDF SS8550 -55OC 100uAdc,
Not Available

Abstract: No abstract text available
Text: SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B , 120-200 D 160-300 C lassification hFE(2) FAIRCHILD S E M IC O N D U C T O R tm © 1999 Fairchild Semiconductor Corporation SS8550 S TATIC C H A R A C T E R IS T IC PNP EPITAXIAL SILICON TRANSISTOR O C , BASE-EMITTER VO LTAGE C U R R E N T G A I N -B A N D W I D T H P R O D U C T MmAfc CO LLECTO R CURRENT COLLECTOR OUTPUT CAPACITANCE Vc«(V), C O LLEC TO R -BASE VO LTAG E FAIRCHILD s e m ic o n d u c to r


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PDF SS8550 SS8050
2007 - SS8550D

Abstract: transistor ss8550d SS8550C ss8550d TRANSISTOR
Text: !"# SS8550 SS8550-C SS8550-D PNP Silicon Transistors TO-92 A E · · · · · · · Features TO , Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8550 , Min 40 25 6.0 -Max -0.1 0.1 0.1 Units Vdc Vdc Vdc uAdc uAdc uAdc D B Electrical , DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .096 G DIMENSIONS MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 SMALL-SIGNAL CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D 160-300 MAX


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PDF SS8550 SS8550-C SS8550-D -55OC SS8550D transistor ss8550d SS8550C ss8550d TRANSISTOR
1999 - transistor TO-92 SS8050

Abstract: No abstract text available
Text: ) B 85-160 C 120-200 D 160-300 Rev. B ©1999 Fairchild Semiconductor Corporation SS8550 , SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. · Complimentary to SS8050 · Collector Current: IC= -1.5A · Collector Dissipation: PC=2W (TC=25°C) TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage


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PDF SS8550 SS8050 transistor TO-92 SS8050
2007 - Not Available

Abstract: No abstract text available
Text: !"# SS8550 SS8550-C SS8550-D PNP Silicon Transistors TO-92 A E · · · · · · · Features TO , Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8550 , Min 40 25 6.0 -Max -0.1 0.1 0.1 Units Vdc Vdc Vdc uAdc uAdc uAdc D B Electrical , DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .010 G DIMENSIONS MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 SMALL-SIGNAL CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D 160-300 MAX


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PDF SS8550 SS8550-C SS8550-D -55OC
2001 - SS8050 application notes

Abstract: SS8050 cross reference transistor NPN TO-92 2W SS8550 cross reference SS8050 1.5A NPN power transistor TO-92 transistor TO-92 SS8050 SS8050DTA SS8050BBU SS8050DBU
Text: SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8550 · Collector Current: IC=1.5A · Collector Power Dissipation: PC=2W (TC=25°C) 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , hFE2 B 85 ~ 160 C 120 ~ 200 D 160 ~ 300 ©2001 Fairchild Semiconductor Corporation Rev. A1, July , Non-Volatile Features Memory space Optoelectronics Markets and q Complementary to SS8550 applications q


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PDF SS8050 SS8550 SS8050 SS8050DCHBU SS8050 application notes SS8050 cross reference transistor NPN TO-92 2W SS8550 cross reference 1.5A NPN power transistor TO-92 transistor TO-92 SS8050 SS8050DTA SS8050BBU SS8050DBU
1999 - transistor TO-92 SS8050

Abstract: No abstract text available
Text: SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. · Complimentary to SS8550 · Collector Current: IC=1.5A · Collector Dissipation: PC=2W (TC=25°C) TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage , hFE(2) CLASSIFICATION Classification hFE(2) B 85-160 C 120-200 D 160-300 Rev. B ©1999 Fairchild


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PDF SS8050 SS8550 transistor TO-92 SS8050
2007 - Not Available

Abstract: No abstract text available
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8550 Lead Free Finish/RoHS , B E Min 40 25 6.0 -Max -0.1 0.1 0.1 Units Vdc Vdc Vdc uAdc uAdc uAdc D B Electrical , DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .096 G DIMENSIONS MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 SMALL-SIGNAL CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D 160-300 MAX


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PDF SS8550-C SS8550-D -55OC SS8550
2007 - Not Available

Abstract: No abstract text available
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8550 Lead Free Finish/RoHS , V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO uAdc uAdc uAdc D ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB 85 40 -400 -0.8 1.2 1.8 -Vdc Vdc Vdc DIM A B C D E G INCHES MIN .175 , HFE (1) D 160-300 Straight Lead Bent Lead * For ammo packing detailed specification, click here to visit our website of product packaging for details. www.mccsemi.com Revision: D 1 of 2


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PDF SS8550-C SS8550-D -55OC SS8550
2007 - Not Available

Abstract: No abstract text available
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8550 Lead Free Finish/RoHS , B E Min 40 25 6.0 -Max -0.1 0.1 0.1 Units Vdc Vdc Vdc uAdc uAdc uAdc D B Electrical , DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .096 G DIMENSIONS MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 SMALL-SIGNAL CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D 160-300 MAX


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PDF SS8550-C SS8550-D -55OC SS8550
2007 - transistor ss8550d

Abstract: SS8550 transistor
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8550 Lead Free Finish/RoHS , uAdc D ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB 85 40 -400 -0.8 1.2 1.8 -Vdc Vdc Vdc DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 .173 E E B C B C , CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D 160-300 Straight Lead Bent Lead * For ammo


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PDF SS8550-C SS8550-D -55OC SS8550 100uAdc, transistor ss8550d SS8550 transistor
transistor TO-92 SS8050

Abstract: No abstract text available
Text: SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. · Complimentary to SS8550 · Collector Current: lc=1.5A · Collector Dissipation: PC , cb=10V, Ie=0 f=1MHz VCE=10V, lc=50mA D O II Min 40 25 6 Typ Max Unit V V V nA nA 100 , (sat) V be (sat) V be C ob fr V V V pF MHz < E o o D O < E o o m 100 Iif e ( 2 ) CLASSIFICATION B 85-160 C 120-200 D 160-300 C lassification hFE(2) FA IR CH ILD SEMICONDUCTOR t m ©1999


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PDF SS8050 SS8550 transistor TO-92 SS8050
2000 - ss8550 TRANSISTOR equivalent

Abstract: ss8050 equivalent SS8050 application notes SS8050 ss8050 transistor transistor ss8050 transistor SS8550 SS8550 SS8550 transistor
Text: SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8550 · Collector Current: IC=1.5A · Collector Dissipation: PC=2W (TC=25°C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V , MHz 100 V hFE Classification Classification B C D hFE2 85 ~ 160 120 ~ 200


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PDF SS8050 SS8550 ss8550 TRANSISTOR equivalent ss8050 equivalent SS8050 application notes SS8050 ss8050 transistor transistor ss8050 transistor SS8550 SS8550 SS8550 transistor
2004 - S8050

Abstract: ss8550 SS8050 SS8550 transistor
Text: SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8550 · Collector Current: IC=1.5A · Collector Power Dissipation: PC=2W (TC=25°C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 40 , Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 ©2004 Fairchild Semiconductor


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PDF SS8050 SS8550 S8050 ss8550 SS8050 SS8550 transistor
2002 - SS8050

Abstract: ss8050 2w equivalent SS8550 transistor SS8550 SS8550 transistor
Text: SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8550 · Collector Current: IC=1.5A · Collector Power Dissipation: PC=2W (TC=25°C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 40 , =10V, IC=50mA 190 MHz 100 V hFE Classification Classification B C D hFE2 85


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PDF SS8050 SS8550 SS8050 ss8050 2w equivalent SS8550 transistor SS8550 SS8550 transistor
Not Available

Abstract: No abstract text available
Text: Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8550 , CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB D DC Current Gain (IC=100mAdc, V CE=1.0Vdc) DC , =10Vdc, f=30MHz) 190 - CLASSIFICATION OF HFE (1) Rank Range C 120-200 E D 160-300 , A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 .173 MM MAX .185 .185 , : D 1 of 2 2013/01/01 MCC TM Micro Commercial Components Ordering Information


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PDF SS8550-C SS8550-D -55OC SS8550
2001 - SS8050

Abstract: ss8050 2w equivalent ss8050 equivalent ss8050 TRANSISTOR equivalent SS8550
Text: SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8550 · Collector Current: IC=1.5A · Collector Power Dissipation: PC=2W (TC=25°C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 40 , =10V, IC=50mA 190 MHz 100 V hFE Classification Classification B C D hFE2 85


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PDF SS8050 SS8550 SS8050 ss8050 2w equivalent ss8050 equivalent ss8050 TRANSISTOR equivalent SS8550
2010 - 2ss8050

Abstract: SS8050 transistor ss8050 SS8050 equivalent ss8550 102 TRANSISTOR
Text: SS8050 NPN Epitaxial Silicon Transistor Features · · · · 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25°C) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO , 100 MHz hFE Classification Classification B C D hFE2 85 ~ 160 120 ~ 200


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PDF SS8050 SS8550 2ss8050 SS8050 transistor ss8050 SS8050 equivalent ss8550 102 TRANSISTOR
2010 - Not Available

Abstract: No abstract text available
Text: SS8050 NPN Epitaxial Silicon Transistor Features • • • • 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25°C) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO , 100 MHz hFE Classification Classification B C D hFE2 85 ~ 160 120 ~ 200


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PDF SS8050 SS8550
2004 - ld33v

Abstract: st ld33v voltage regulator ld33v VIPER22A pc817 sharp viper22a transformer design viper22a 5v power supply design VIPER22A Application Note VIPER22A for DVD NTC5D-9
Text: Jun-feng Zhang uc d te le INTRODUCTION s) t( ro P so Ob - In the past few years , . uc d All these contents can be summarized by the following list: te le s) t( ro P , feedback Is 0.23V IFB 1 k FB R1 C 230 R2 SOURCE uc d s) t( 1.1.5 , D11 100uF/10V F- (3.3Vac) / 0.15A GND 2 uc d D13 BYW 100/200 D9 1N5818 J5 , . uc d A high efficiency transformer should have low inter-winding capacitance to decrease the


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PDF AN1897 VIPer22A ld33v st ld33v voltage regulator ld33v VIPER22A pc817 sharp viper22a transformer design viper22a 5v power supply design VIPER22A Application Note VIPER22A for DVD NTC5D-9
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