The Datasheet Archive

Top Results (1)

Part Manufacturer Description Datasheet Download Buy Part
MMSS8050-L-TP Micro Commercial Components Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
SF Impression Pixel

Search Stock (1)

  You can filter table by choosing multiple options from dropdownShowing 1 results of 1
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
MMSS8050-L-TP Micro Commercial Components Future Electronics - $0.02 $0.02

No Results Found

Show More

SS8050LT datasheet (3)

Part Manufacturer Description Type PDF
SS8050LT1 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
SS8050LT1 Weitron NPN General Purpose Transistors Original PDF
SS8050LT1-SOT-23 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF

SS8050LT Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - SS8050LT

Abstract: 8050LT1
Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR(NPN) FEATURES Power dissipation PCM: W(Tamb=25℃) 0.3 Collector current ICM: 1.5 A 40 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol MIN Collector-base breakdown voltage V(BR)CBO 40 V Ic


Original
PDF OT-23 SS8050LT1 100mA 800mA 30MHZ 8050LT1 SS8050LT
marking y1 sot-23

Abstract: SS8550LT1 Y1 SS8050LT1 amplifier 800mA
Text: : SS8050LT1=Y1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA SS8050LT1 NPN EPITAXIAL SILICON TRANSISTOR SS8050LT1 - , SS8050LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8550LT1 * Collector Current :Ic= 800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25 NPN EPITAXIAL SILICON TRANSISTOR Shandong


Original
PDF SS8050LT1 SS8550LT1 800mA 625mW OT-23 100mA 800mA 30MHz marking y1 sot-23 SS8550LT1 Y1 SS8050LT1 amplifier 800mA
Y1 SOT-23

Abstract: marking y1 sot-23 8050LT1 marking Y1 sot23 y1 SOT23 Y1 TRANSISTOR MARKING SOT23 5 Y1 marking transistor sot23 8050L transistor marking y1 SS8050LT1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 SS8050LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 WTamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J T stg: -55 to +150 Unit : mm ELECTRICAL CHARACTERISTICSTamb=25 Parameter Symbol unless Test otherwise conditions


Original
PDF OT-23 OT--23 SS8050LT1 8050LT1 037TPY 950TPY 550REF 022REF Y1 SOT-23 marking y1 sot-23 marking Y1 sot23 y1 SOT23 Y1 TRANSISTOR MARKING SOT23 5 Y1 marking transistor sot23 8050L transistor marking y1 SS8050LT1
2002 - Not Available

Abstract: No abstract text available
Text: SS8050LT1 NPN 3 * “G” Lead(Pb)-Free 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL , CURRENT GAIN I C , CO LLECTOR CURRENT (mA) SS8050LT1 IB = 2.5mA IB = 2.0mA 0.3 IB = 1.5mA , SS8050LT1 SOT-23 Outline Dimension SOT-23 A B TOP VIEW C D E G H K J WEITRON


Original
PDF SS8050LT1 OT-23 SS8050LT1 80mAdc) OT-23
Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: S9016LT1 NPN S9018LT1 NPN SS8050LT1 NPN SS8550LT1 PNP KTA1505 IC (mA) 150 200 150 150 100 200 , MMST4403 PNP MMST5401 PNP MMST5551 NPN MMSTA42 NPN MMSTA92 PNP SS8050LT1 NPN SS8550LT1 PNP 2SC4081


Original
PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
2002 - Not Available

Abstract: No abstract text available
Text: SS8050LT1 NPN 3 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless , I C , CO LLECTOR CURRENT (mA) SS8050LT1 IB = 2.0mA 0.3 IB = 1.5mA 0.2 IB = 1.0mA , , COLLECTOR CURRENT (mA) FIG.1 Static Characteristic 10 0.1 10 SS8050LT1 SOT-23 Outline


Original
PDF SS8050LT1 OT-23 SS8050LT1 80mAdc) OT-23
SS8050LT1

Abstract: marking H
Text: CLASSIFICATION OF hFE(1) Rank L 120-200 Range DEVICE MARKING H 200-350 SS8050LT1=Y1 WEJ , SS8050LT1 SS8050LT1 TRANSISTOR (NPN) FEATURES SOT-323 1. 25¡ À0. 05 Power dissipation 1. 01 R EF 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current ICM: 1.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 2. 00¡ À0. 05 0.2 0. 30 PCM: Unit: mm TJ, Tstg: -55


Original
PDF SS8050LT1 OT-323 100mA 800mA 800mA, 30MHz SS8050LT1 marking H
Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s d882 to-92 KL4 SOT-23 BR S8050 bq d882 S8050 equivalent transistor D882 datasheet PCR100-6
Text: NPN S9018LT1 NPN SS8050LT1 NPN SS8550LT1 PNP M8050 M8550 200 200 300 300 300 300 200 , K3F K2N K5N K3X PNP PNP MMST5551 NPN MMSTA42 NPN MMSTA92 PNP SS8050LT1 NPN SS8550LT1 PNP


Original
PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s d882 to-92 KL4 SOT-23 BR S8050 bq d882 S8050 equivalent transistor D882 datasheet PCR100-6
2004 - Not Available

Abstract: No abstract text available
Text: 120-200 Range DEVICE MARKING SS8050LT1=Y1 H 200-350 Jiangsu Changjiang Electronics , JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-323 FEATURES 1. BASE 2. EMITTER W (Tamb=25℃) 1. 30¡ À0. 03 Collector current 1.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 2. 00¡ À0. 05 2. 30¡ À0. 05 0. 30 0.2 1. 01 R EF Power dissipation


Original
PDF OT-323 SS8050LT1 OT-323 100mA 800mA 800mA, 30MHz SS8050LT1
SS8050LT1

Abstract: No abstract text available
Text: 120-200 D E V IC E M A R K IN G : SS8050LT1=Y1 172 M C C Typical C h arac teristics SS8050LT1 D Ü UJ I 0 1 VceM , C O U -E C T O R -E M IT T E R VO LT AG E IclmA], C O LL , M CC SO T-23 P la stic -E n c a p su la te T r a n s is t o r s ^ ^ 1.B A SE 2.E M IT T E R 3.C O L L E C T O R SS8050LT1 TRANSISTOR (NPN) FEATURES Hgm ardissipation PCM: 0.625 W (Tamb=25*C ) ffifjfirfftr current ICM: 1.5 A Cotieetòr-base voltage V(br )cbo :40V Operating and storage Junction


OCR Scan
PDF SS8050LT1 SS8050LT1
2002 - sot-23 Marking 1Hc

Abstract: TOP marking 1HC marking 1Hc SS8050LT1 SOT-23 1HC
Text: SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 25 0.1 40 100 5.0 100 4.0 WEITRON , Rev.A 10-Apr-09 SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued , = 2.5mA hFE, DC CURRENT GAIN I C , CO LLECTOR CURRENT (mA) SS8050LT1 IB = 2.0mA 0.3 , ://www.weitron.com.tw 3/4 Rev.A 10-Apr-09 SS8050LT1 SOT-23 Outline Dimension SOT-23 Dim A B C D E G


Original
PDF SS8050LT1 OT-23 10-Apr-09 80mAdc) OT-23 sot-23 Marking 1Hc TOP marking 1HC marking 1Hc SS8050LT1 SOT-23 1HC
2002 - sot-23 Marking 1Hc

Abstract: SOT-23 1HC
Text: SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 25 0.1 40 100 5.0 100 0.15 4.0 WEITRON http://www.weitron.com.tw 1/2 u 0.15 35 u 27-Jul-2012 SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit hFE 100 600 - VCE(sat) - 0.5 Vdc ON CHARACTERISTICS DC Current Gain (IC


Original
PDF SS8050LT1 OT-23 27-Jul-2012 80mAdc) OT-23 sot-23 Marking 1Hc SOT-23 1HC
2011 - AZD074

Abstract: No abstract text available
Text: R30 R29 K 0 1 SS8050LT1 1 Q R28 0 R R27 2W-SIL-V F n 0


Original
PDF AZD074 IQS550, AZD074: AZD074
SS850

Abstract: amplifier 800mA SS8550LT1 Y2 TRANSISTOR
Text: SS8550LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8050LT1 * Collector Current :Ic= -800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25 PNP EPITAXIAL SILICON TRANSISTOR Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Package:SOT-23 Rating Unit Collector-Base Voltage Vcbo -40 V Collector-Emitter Voltage Vceo -25 V Emitter-Base


Original
PDF SS8550LT1 SS8050LT1 -800mA 625mW OT-23 100mA 800mA -800mA -80mA SS850 amplifier 800mA SS8550LT1 Y2 TRANSISTOR
2002 - IC800

Abstract: y1 npn SS8050LT1
Text: SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E , u SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued , VCE = 1V IB = 3.0mA 0.4 hFE, DC CURRENT GAIN I C , CO LLECTOR CURRENT (mA) SS8050LT1 IB , .1 Static Characteristic 10 0.1 10 SS8050LT1 SOT-23 Outline Dimension SOT-23 A B TOP


Original
PDF SS8050LT1 OT-23 SS8050LT1 80mAdc) OT-23 IC800 y1 npn
Supplyframe Tracking Pixel