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Advantech Co Ltd
SQF-SMSU4-256G-SBE Advantech SQFlash SQF-SMS 640 - Solid state drive - 256 GB - internal - mSATA - SATA 6Gb/s
SQF-SMSU4-256G-SBE ECAD Model
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SQF-SMSU4-256G-SBE datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
SQF-SMSU4-256G-SBE SQF-SMSU4-256G-SBE ECAD Model Advantech Uncategorized - Miscellaneous - SQF MSATA 640 256G UMLC Original PDF

SQF-SMSU4-256G-SBE Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - s886564g

Abstract: KMPDC0072EA
Text: Photodiode arrays with ampli¿er S8865-64G/-128G/- 256G S8866-64G-02/-128G-02 Photodiode array , circuit, the C9118 series (sold separately) is provided. (Not compatible with the S8865- 256G .) Features , S8865- 256G : 0.2 mm pitch × 256 ch S8866-64G-02: 1.6 mm pitch × 64 ch S8866-128G-02: 0.8 mm pitch × 128 , H S8865-64G 0.8 0.7 0.8 64 51.2 7800 S8865-128G 0.4 0.3 0.6 128 51.2 3900 S8865- 256G 0.2 0.1 0.3 256 , www.hamamatsu.com 1 Photodiode arrays with ampli¿er S8865-64G/-128G/- 256G , S8866-64G-02/-128G-02


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 C9118 S8865-256G. SE-171 KMPD1105E01 s886564g KMPDC0072EA
2014 - Not Available

Abstract: No abstract text available
Text: アンプ付フォトダイオードアレイ S8865-64G/-128G/- 256G S8866-64G-02/-128G-02 , £²)を用意しています (S8865- 256G , S8866-64G-02は対応していません)。 特長 用é , 64 51.2 S8865-128G 0.4 0.3 0.6 128 51.2 S8865- 256G S8866-64G-02 S8866-128G-02 0.2 1.6 , æµœæ¾ãƒ›ãƒˆãƒ‹ã‚¯ã‚¹æ ªå¼ä¼šç¤¾ 1 S8865-64G/-128G/- 256G , S8866-64G-02/-128G-02 アンプ付フã , ›® クロックパルス周波数*5 S8865-64G S8865-128G, S8866-128G-02 ラインレート S8865- 256G S8866


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 C9118ã C9118) C9118-01) S8865-64G S8865-128G S8866-128G-02
2010 - Not Available

Abstract: No abstract text available
Text: Photodiode arrays with ampli er S8865-64G/-128G/- 256G S8866-64G-02/-128G-02 Photodiode array , circuit, the C9118 series (sold separately) is provided. (Not compatible with the S8865- 256G .) Features , pitch × 128 ch S8865- 256G : 0.2 mm pitch × 256 ch S8866-64G-02: 1.6 mm pitch × 64 ch S8866 , S8865-64G 0.8 0.7 0.8 64 51.2 7339 S8865-128G 0.4 0.3 0.6 128 51.2 3784 S8865- 256G , -64G/-128G/- 256G , S8866-64G-02/-128G-02 Photodiode arrays with ampli er Absolute maximum ratings


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 S8866-64G-02/-128G-02 C9118 S8865-256G. SE-171 KMPD1105E02
S8865-64G

Abstract: S8865-256G S8866-64G-02 800-10-012-20 S8865 C9118 C9118 m 60 n 03 g10 s886564g S8866-128G-02
Text: S8865-64G/-128G/- 256G S8866-64G-02/-128G-02 X IC X IC C9118 ( ) (S8865- 256G , 7339 S8865-128G 0.4 0.3 0.6 128 51.2 3784 S8865- 256G 0.2 0.1 0.3 256 51.2 1922 , mm mm /s *1: KMPDC0072JA 1 S8865-64G/-128G/- 256G , S8866-64G-02/-128G-02 Vdd Vref , Low *5: f(CLK) Cf S8865-64G S8865-128G S8865- 256G S8866-64G-02 S8866-128G-02 Min. Typ , 1 1 1 - kHz k mW pF 1/4 2 S8865-64G/-128G/- 256G , S8866-64G-02/-128G-02 [Ta


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 C9118 S8865-256G S8866-64G-02: S8866-128G-02: S8865-64G S8865-128G S8866-64G-02 S8865-64G S8865-256G 800-10-012-20 S8865 C9118 C9118 m 60 n 03 g10 s886564g S8866-128G-02
Not Available

Abstract: No abstract text available
Text: Photodiode arrays with amplifier S8865-64G/-128G/- 256G S8866-64G-02/-128G-02 Photodiode array , S8865- 256G and S8866-64G-02.) Features Applications Large element pitch: 5 types available S8865-64G: 0.8 mm pitch × 64 ch S8865-128G: 0.4 mm pitch × 128 ch S8865- 256G : 0.2 mm pitch × 256 ch , -128G 0.4 0.3 0.6 128 51.2 S8865- 256G 0.2 0.1 0.3 256 51.2 Glass epoxy S8866-64G-02 S8866 , www.hamamatsu.com 1 Photodiode arrays with amplifier S8865-64G/-128G/- 256G , S8866-64G-02/-128G-02


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 S8866-64G-02/-128G-02 C9118 S8865-256G S8866-64G-02. SE-171 KMPD1105E05
2015 - Not Available

Abstract: No abstract text available
Text: アンプ付フォトダイオードアレイ S11865-64G/-128G/- 256G S11866-64G-02/128G-02 , S11865-128G: 0.4 mmピッチ × 128 ch S11865- 256G : 0.2 mmピッチ × 256 ch S11866-64G-02: 1.6 , 128 51.2 S11865- 256G 0.2 0.1 0.3 256 51.2 ガラスエポキシ S11866-64G-02 1.6 1.5 , -64G/-128G/- 256G , S11866-64G-02/-128G-02 アンプ付フォトダイオードアレイ 絶対最大å , -128G, S11866-128G-02 S11865- 256G 出力インピーダンス S11865-64G, S11866-64G-02 消費電流 S11865


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PDF S11865-64G/-128G/-256G S11866-64G-02/128G-02 S8865/ S11865/S11866ã S8866ã C9118-01 KACCC0643JA S11865-64G/-128G/-256G, S11866-64G-02/-128G-02 C9118)
2010 - Durtal

Abstract: x-ray tube IC 74hc32 image sensor x-ray S8865-64G S8865-256G sensor x-ray S8865 C9118 C9118 PHOTODIODE 4 CHANNEL ARRAY
Text: Photodiode arrays with ampli er S8865-64G/-128G/- 256G S8866-64G-02/-128G-02 Photodiode array , circuit, the C9118 series (sold separately) is provided. (Not compatible with the S8865- 256G .) Features , pitch × 128 ch S8865- 256G : 0.2 mm pitch × 256 ch S8866-64G-02: 1.6 mm pitch × 64 ch S8866 , S8865-64G 0.8 0.7 0.8 64 51.2 7339 S8865-128G 0.4 0.3 0.6 128 51.2 3784 S8865- 256G , arrays with ampli er S8865-64G/-128G/- 256G , S8866-64G-02/-128G-02 Absolute maximum ratings


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 S8866-64G-02/-128G-02 C9118 S8865-256G. SE-171 KMPD1105E02 Durtal x-ray tube IC 74hc32 image sensor x-ray S8865-64G S8865-256G sensor x-ray S8865 C9118 PHOTODIODE 4 CHANNEL ARRAY
2015 - Not Available

Abstract: No abstract text available
Text: Photodiode arrays with amplifiers S11865-64G/-128G/- 256G S11866-64G-02/-128G-02 Photodiode , driver circuit, the C9118 series (sold separately) is provided (this circuit does not support the S11865- 256G , S11865- 256G : 0.2 mm pitch × 256 ch S11866-64G-02: 1.6 mm pitch × 64 ch S11866-128G-02: 0.8 mm pitch à , 0.6 128 51.2 S11865- 256G S11866-64G-02 S11866-128G-02 0.2 1.6 0.8 0.1 1.5 0.7 0.3 1.6 , www.hamamatsu.com 1 Photodiode arrays with amplifiers S11865-64G/-128G/- 256G , S11866-64G-02/-128G-02


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PDF S11865-64G/-128G/-256G S11866-64G-02/-128G-02 S11865/S11866 S8865/S8866 B1201, KMPD1135E04
2014 - Not Available

Abstract: No abstract text available
Text: Photodiode arrays with amplifier S8865-64G/-128G/- 256G S8866-64G-02/-128G-02 Photodiode array , S8865- 256G and S8866-64G-02.) Features Applications Large element pitch: 5 types available S8865-64G: 0.8 mm pitch × 64 ch S8865-128G: 0.4 mm pitch × 128 ch S8865- 256G : 0.2 mm pitch × 256 ch , -128G 0.4 0.3 0.6 128 51.2 S8865- 256G 0.2 0.1 0.3 256 51.2 Glass epoxy S8866-64G-02 S8866 , www.hamamatsu.com 1 Photodiode arrays with amplifier S8865-64G/-128G/- 256G , S8866-64G-02/-128G-02


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 S8866-64G-02/-128G-02 C9118 S8865-256G S8866-64G-02. KMPD1105E06
2012 - M29DW256

Abstract: 0C60000 06FFFFF 013F 099FFFF
Text: : 09005aef84ecabef m29dw_ 256g .pdf - Rev. A 10/12 EN 1 Products and specifications discussed herein are subject , function Speed Package Category Details M29 D = Dual operation W = VCC = 2.7 to 3.6V 256G = 256Mb (x16 , only with option 6. 1, 2 1, 2 Notes PDF: 09005aef84ecabef m29dw_ 256g .pdf - Rev. A 10/12 EN 2 , . 47 PDF: 09005aef84ecabef m29dw_ 256g .pdf - Rev. A 10/12 EN 3 Micron Technology, Inc , m29dw_ 256g .pdf - Rev. A 10/12 EN 4 Micron Technology, Inc. reserves the right to change products


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PDF 256Mb: M29DW256G 32-word 256-word 09005aef84ecabef M29DW256 0C60000 06FFFFF 013F 099FFFF
2008 - Not Available

Abstract: No abstract text available
Text: Photodiode arrays with ampli¿er S8865-64G/-128G/- 256G S8866-64G-02/-128G-02 Photodiode array , circuit, the C9118 series (sold separately) is provided. (Not compatible with the S8865- 256G .) Features , S8865- 256G : 0.2 mm pitch × 256 ch S8866-64G-02: 1.6 mm pitch × 64 ch S8866-128G-02: 0.8 mm pitch × 128 , H S8865-64G 0.8 0.7 0.8 64 51.2 7800 S8865-128G 0.4 0.3 0.6 128 51.2 3900 S8865- 256G 0.2 0.1 0.3 256 , www.hamamatsu.com 1 Photodiode arrays with ampli¿er S8865-64G/-128G/- 256G , S8866-64G-02/-128G-02


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 C9118 S8865-256G. SE-171 KMPD1105E01
CSQ-255G

Abstract: CSQ-256G CSQ255G 9904A CSQ-255
Text: CHINA SEMICONDUCTOR CORPORATION Feature § § § § 0.25 inch (6.2mm) Digit height. Case mold type Excellent character appearance Wide viewing angle Mechanical Dimension Typical Internal Equivalent Circuit TRIAD DIGIT DISPLAY CSQ- 256G /255G Model no. § CSQ- 256G /255G Yellow Green (Gap/Gap) Description § § CSQ- 256G is common anode CSQ-255G is common cathode CSQ- 256G /255G GENERAL SPECIFICATIONS Absolute Maximum Ratings ( TA25) Parameter Symbol Yellow Green


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PDF CSQ-256G/255G CSQ-256G/255G CSQ-256G CSQ-255G 25per 250or 9-04-A CSQ255G 9904A CSQ-255
2005 - S8865-256G

Abstract: No abstract text available
Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865- 256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865- 256G are Si photodiode arrays combined with a , phosphor screen affixed on the active area are available for X-ray detection: S8865- 256G different input , amplifier S8865-256, S8865- 256G Photodiode array with amplifier s Absolute maximum ratings , ) Topr Tstg S8865-256, S8865- 256G Rated value -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to


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PDF S8865-256, S8865-256G S8865-256 S8865-256G SE-171 KMPD1087E01
2006 - photodiode 256 elements

Abstract: PHOTODIODE 4 CHANNEL ARRAY 74HC32 S8865-256G S8865-256 KMPDC0222EA
Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865- 256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865- 256G are Si photodiode arrays combined with a , active area are available for X-ray detection: S8865- 256G s Specifications of active area Parameter , amplifier S8865-256, S8865- 256G s Absolute maximum ratings Parameter Supply voltage Reference , pF Photodiode array with amplifier S8865-256, S8865- 256G s Electrical/optical


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PDF S8865-256, S8865-256G S8865-256 S8865-256G SE-171 KMPD1087E01 photodiode 256 elements PHOTODIODE 4 CHANNEL ARRAY 74HC32 KMPDC0222EA
2006 - Not Available

Abstract: No abstract text available
Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865- 256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865- 256G are Si photodiode arrays combined with a , phosphor screen affixed on the active area are available for X-ray detection: S8865- 256G different input , ) Topr Tstg S8865-256, S8865- 256G Rated value -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to , -256, S8865- 256G Typ. 200 to 1000 720 0.002 0.001 3.5 15 30 250 125 0.6 0.3 Vref Max. 0.02 0.01 ±10 Unit nm


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PDF S8865-256, S8865-256G S8865-256 S8865-256G SE-171 KMPD1087E01
2000 - Hitachi DSAUTAZ006

Abstract: No abstract text available
Text: Appendix B Package Dimensions 30.6 ± 0.2 28 192 193 129 128 Unit: mm 30.6 ± 0.2 256 1 * 0.18 ± 0.05 0.16 ± 0.04 0.11 M 64 65 0.4 3.95 Max * 0.17 ± 0.05 0.15 ± 0.04 3.20 1.4 1.3 0° ­ 8° 0.5 ± 0.2 0.08 0.40 ­ 0.15 + 0.10 *Dimension including the plating thickness Base material dimension Hitachi Code JEDEC EIAJ Weight (reference value) FP- 256G - Conforms 5.4 g Figure B.1 Package Dimensions (FP- 256G ) Rev. 1.0, 04/00, page 941 of 963 30.6 ± 0.2 28


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PDF FP-256G FP-256G) FP-208E FP-208E) Hitachi DSAUTAZ006
2006 - JMF602

Abstract: schematic usb flash nand Hynix 32Gb Nand flash 32Gb Nand flash toshiba hynix NAND ECC of 32Gb Nand flash memory by toshiba serial flash memory 8gb Hynix 16Gb Nand flash hynix nand flash 2gb flash controller
Text: 128 128G Bytes 1G x 8 Bits (8Gb) 1 CE pin 256 256G Bytes 2G x 8 Bits (16Gb) 2 CE pins 128 256G Bytes 4G x 8 Bits (32Gb) 4 CE pins 64 256G Bytes Product Information


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PDF JMF602 JMF602 schematic usb flash nand Hynix 32Gb Nand flash 32Gb Nand flash toshiba hynix NAND ECC of 32Gb Nand flash memory by toshiba serial flash memory 8gb Hynix 16Gb Nand flash hynix nand flash 2gb flash controller
2004 - SH7710

Abstract: No abstract text available
Text: Mass (reference value) Figure B.1 Package Dimensions (FP- 256G ) Rev. 1.00, 01/04, page 856 of 860 1.3 FP- 256G - Conforms 5.4 g Renesas Technology


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PDF SH7710 FP-256G) FP-256G
tm256gu9c

Abstract: No abstract text available
Text: Power Dissipation Operating Free-Air Temperature Range . . . 0°C to 70°C description The T M 256G U 9C , for parity] in a 30-pin single-in-line package. The T M 256G U 9C is composed of two 9 10 11 12 13 , ) package . vss The TM 256G U 9C is mounted on a substrate together with three 0.2-nF decoupling , - A UG UST 1989 - REVISED JANUARY 1991 The T M 256G U 9C features RAS access times of 60 ns, 70 , unlatched to allow greater system flexibility. The T M 256G U 9C is characterized for operation from 0°C to


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PDF TM256GU9C 144-WORD S292B TM256GU9Cs 30-Pin
2012 - Not Available

Abstract: No abstract text available
Text: RL 253G RL 253G 200 RL 254G RL 254G 400 RL 255G RL 255G 600 RL 256G RL 256G , . mounted RL 254G 1.1 5.0 200 15 RL 255G RL 256G RL 257G Unit V µA PF RL251G


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PDF RL251G RL257G MIL-S-19500 MIL-STD-750, DO-201ADç D0-201AD
HER251G

Abstract: 251G
Text: blocking voltage HER 254G HER 255G HER 256G HER 257G HER 258G 50 100 200 , 251G VR = 4.0V, f = 1MHz HER 254G HER 255G 1.3 1.0 HER 256G HER 257G 1.7


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PDF HER251G HER258G DO-15L HER251G HER253G HER254G, HER255G HER256G 251G
2005 - Not Available

Abstract: No abstract text available
Text: 256G HER 257G HER 258G 50 100 200 300 400 600 800 1000 V 35 70 , MAX. Reverse Recovery Time 典型结电容 HER 251G 1.0 HER 256G HER 257G 1.7


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PDF HER251G HER258G DO-27
2005 - Not Available

Abstract: No abstract text available
Text: 最大可重复峰值反向电压 FR 252G FR 253G FR 254G FR 255G FR 256G FR 257G 单位 Unit VRRM , junction capacitance - 191 - FR 252G FR 253G FR 254G FR 255G FR 256G FR 257G


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PDF FR251G FR257G DO-27
Not Available

Abstract: No abstract text available
Text: temperature) Spring Force: 11.7 oz. ( 256g ) @ .147 (3.73) travel Typical Resistance: < 10 m Maximum Travel


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PDF
1995 - K9F2G08U0B-PCB0

Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
Text: Generation 16 : 16M 40 : 4M 80 : 8M 4G : 4G BG : 32G EG : 256G HG : 512G ZG : 48G 28 : 128M 56 : 256M 1G : 1G 8G : 8G CG : 64G FG : 256G LG : 24G 00 : NONE -1- Part Number Decoder NAND Flash


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PDF K9F2G08U0B 07-Sep-2010 K9F2G08U0B-PCB0 samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
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