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BBD-128-G-A-N BBD-128-G-A-N ECAD Model Samtec Inc BBD-128-G-A-N,
TFSD-21-28-G-12.00-S TFSD-21-28-G-12.00-S ECAD Model Samtec Inc Board Connector, 42 Contact(s), 2 Row(s), Male, 0.05 inch Pitch, Crimp Terminal, Locking, Black Insulator
SFSD-11-28-G-36.00-D-NDX SFSD-11-28-G-36.00-D-NDX ECAD Model Samtec Inc Interconnection Device, ROHS COMPLIANT
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Advantech Co Ltd
SQF-SMSU4-128G-S9E Advantech SQFlash SQF-SMS 630 - Solid state drive - 128 GB - internal - mSATA - SATA 6Gb/s
SQF-SMSU4-128G-S9E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
NAC SQF-SMSU4-128G-S9E 0 1 - - - - - More Info

SQF-SMSU4-128G-S9E datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
SQF-SMSU4-128G-S9E SQF-SMSU4-128G-S9E ECAD Model Advantech Uncategorized - Miscellaneous - SQF MSATA 630 128G UMLC Original PDF

SQF-SMSU4-128G-S9E Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - Durtal

Abstract: x-ray tube IC 74hc32 image sensor x-ray S8865-64G S8865-256G sensor x-ray S8865 C9118 C9118 PHOTODIODE 4 CHANNEL ARRAY
Text: Photodiode arrays with ampli er S8865-64G/- 128G /-256G S8866-64G-02/-128G-02 Photodiode array , Applications Large element pitch: 5 types available S8865-64G: 0.8 mm pitch × 64 ch S8865- 128G : 0.4 mm , S8865-64G 0.8 0.7 0.8 64 51.2 7339 S8865- 128G 0.4 0.3 0.6 128 51.2 3784 S8865 , arrays with ampli er S8865-64G/- 128G /-256G, S8866-64G-02/-128G-02 Absolute maximum ratings , -64G-02 Min. Typ. Max. 40 2000 3 100 0.5 1 - S8865- 128G S8866-128G-02 Min. Typ. Max. 40 2000 3


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 S8866-64G-02/-128G-02 C9118 S8865-256G. SE-171 KMPD1105E02 Durtal x-ray tube IC 74hc32 image sensor x-ray S8865-64G S8865-256G sensor x-ray S8865 C9118 PHOTODIODE 4 CHANNEL ARRAY
2008 - s886564g

Abstract: KMPDC0072EA
Text: Photodiode arrays with ampli¿er S8865-64G/- 128G /-256G S8866-64G-02/-128G-02 Photodiode array , Large element pitch: 5 types available S8865-64G: 0.8 mm pitch × 64 ch S8865- 128G : 0.4 mm pitch × 128 ch , H S8865-64G 0.8 0.7 0.8 64 51.2 7800 S8865- 128G 0.4 0.3 0.6 128 51.2 3900 S8865-256G 0.2 0.1 0.3 256 , www.hamamatsu.com 1 Photodiode arrays with ampli¿er S8865-64G/- 128G /-256G, S8866-64G-02/-128G-02 , 0.5 1 - S8865- 128G S8866-128G-02 Min. Typ. Max. 40 2000 3 180 0.5 1 - S8865-256G Min. 40 Typ. 3


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 C9118 S8865-256G. SE-171 KMPD1105E01 s886564g KMPDC0072EA
2014 - Not Available

Abstract: No abstract text available
Text: Photodiode arrays with amplifier S8865-64G/- 128G /-256G S8866-64G-02/-128G-02 Photodiode array , S8865-64G: 0.8 mm pitch × 64 ch S8865- 128G : 0.4 mm pitch × 128 ch S8865-256G: 0.2 mm pitch × 256 ch , photosensitive area length Board material Symbol*1 P W H - S8865-64G 0.8 0.7 0.8 64 51.2 S8865- 128G , www.hamamatsu.com 1 Photodiode arrays with amplifier S8865-64G/- 128G /-256G, S8866-64G-02/-128G-02 , S8865-64G S8865- 128G , S8866-128-02G Line rate S8865-256G S8866-64G-02 Output impedance S8865


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 S8866-64G-02/-128G-02 C9118 S8865-256G S8866-64G-02. KMPD1105E06
2015 - Not Available

Abstract: No abstract text available
Text: アンプ付フォトダイオードアレイ S11865-64G/- 128G /-256G S11866-64G-02/128G-02 , S11865- 128G : 0.4 mmピッチ × 128 ch S11865-256G: 0.2 mmピッチ × 256 ch S11866-64G-02: 1.6 , 基板材料 記号*1 P W H - S11865-64G 0.8 0.7 0.8 64 51.2 S11865- 128G 0.4 0.3 0.6 , -64G/- 128G /-256G, S11866-64G-02/-128G-02 アンプ付フォトダイオードアレイ 絶対最大å , ] é …ç›® クロックパルス周波数*5 S11865-64G, S11866-64G-02 ラインレート*6 S11865- 128G


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PDF S11865-64G/-128G/-256G S11866-64G-02/128G-02 S8865/ S11865/S11866ã S8866ã C9118-01 KACCC0643JA S11865-64G/-128G/-256G, S11866-64G-02/-128G-02 C9118)
2014 - Not Available

Abstract: No abstract text available
Text: アンプ付フォトダイオードアレイ S8865-64G/- 128G /-256G S8866-64G-02/-128G-02 , 64 51.2 S8865- 128G 0.4 0.3 0.6 128 51.2 S8865-256G S8866-64G-02 S8866-128G-02 0.2 1.6 , æµœæ¾ãƒ›ãƒˆãƒ‹ã‚¯ã‚¹æ ªå¼ä¼šç¤¾ 1 S8865-64G/- 128G /-256G, S8866-64G-02/-128G-02 アンプ付フã , ›® クロックパルス周波数*5 S8865-64G S8865- 128G , S8866-128G-02 ラインレート S8865-256G S8866-64G-02 出力インピーダンス S8865-64G, S8866-64G-02 消費電力 S8865- 128G , S8866-128G-02 S8865-256G Highゲイã


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 C9118ã C9118) C9118-01) S8865-64G S8865-128G S8866-128G-02
S8865-64G

Abstract: S8865-256G S8866-64G-02 800-10-012-20 S8865 C9118 C9118 m 60 n 03 g10 s886564g S8866-128G-02
Text: S8865-64G/- 128G /-256G S8866-64G-02/-128G-02 X IC X IC C9118 ( ) (S8865 , 7339 S8865- 128G 0.4 0.3 0.6 128 51.2 3784 S8865-256G 0.2 0.1 0.3 256 51.2 1922 , mm mm /s *1: KMPDC0072JA 1 S8865-64G/- 128G /-256G, S8866-64G-02/-128G-02 Vdd Vref , Low *5: f(CLK) Cf S8865-64G S8865- 128G S8865-256G S8866-64G-02 S8866-128G-02 Min. Typ , 1 1 1 - kHz k mW pF 1/4 2 S8865-64G/- 128G /-256G, S8866-64G-02/-128G-02 [Ta


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 C9118 S8865-256G S8866-64G-02: S8866-128G-02: S8865-64G S8865-128G S8866-64G-02 S8865-64G S8865-256G 800-10-012-20 S8865 C9118 C9118 m 60 n 03 g10 s886564g S8866-128G-02
2008 - Not Available

Abstract: No abstract text available
Text: Photodiode arrays with ampli¿er S8865-64G/- 128G /-256G S8866-64G-02/-128G-02 Photodiode array , Large element pitch: 5 types available S8865-64G: 0.8 mm pitch × 64 ch S8865- 128G : 0.4 mm pitch × 128 ch , H S8865-64G 0.8 0.7 0.8 64 51.2 7800 S8865- 128G 0.4 0.3 0.6 128 51.2 3900 S8865-256G 0.2 0.1 0.3 256 , www.hamamatsu.com 1 Photodiode arrays with ampli¿er S8865-64G/- 128G /-256G, S8866-64G-02/-128G-02 , 0.5 1 - S8865- 128G S8866-128G-02 Min. Typ. Max. 40 2000 3 180 0.5 1 - S8865-256G Min. 40 Typ. 3


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 C9118 S8865-256G. SE-171 KMPD1105E01
Not Available

Abstract: No abstract text available
Text: Photodiode arrays with amplifier S8865-64G/- 128G /-256G S8866-64G-02/-128G-02 Photodiode array , S8865-64G: 0.8 mm pitch × 64 ch S8865- 128G : 0.4 mm pitch × 128 ch S8865-256G: 0.2 mm pitch × 256 ch , photosensitive area length Board material Symbol*1 P W H - S8865-64G 0.8 0.7 0.8 64 51.2 S8865- 128G , www.hamamatsu.com 1 Photodiode arrays with amplifier S8865-64G/- 128G /-256G, S8866-64G-02/-128G-02 , S8865-64G S8865- 128G , S8866-128-02G Line rate S8865-256G S8866-64G-02 Output impedance S8865


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 S8866-64G-02/-128G-02 C9118 S8865-256G S8866-64G-02. SE-171 KMPD1105E05
2010 - Not Available

Abstract: No abstract text available
Text: Photodiode arrays with ampli er S8865-64G/- 128G /-256G S8866-64G-02/-128G-02 Photodiode array , Applications Large element pitch: 5 types available S8865-64G: 0.8 mm pitch × 64 ch S8865- 128G : 0.4 mm , S8865-64G 0.8 0.7 0.8 64 51.2 7339 S8865- 128G 0.4 0.3 0.6 128 51.2 3784 S8865 , -64G/- 128G /-256G, S8866-64G-02/-128G-02 Photodiode arrays with ampli er Absolute maximum ratings , -64G-02 Min. Typ. Max. 40 2000 3 100 0.5 1 - S8865- 128G S8866-128G-02 Min. Typ. Max. 40 2000 3


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PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 S8866-64G-02/-128G-02 C9118 S8865-256G. SE-171 KMPD1105E02
2015 - Not Available

Abstract: No abstract text available
Text: Photodiode arrays with amplifiers S11865-64G/- 128G /-256G S11866-64G-02/-128G-02 Photodiode , Element pitch: 5 types available S11865-64G: 0.8 mm pitch × 64 ch S11865- 128G : 0.4 mm pitch × 128 ch , photosensitive area length Board material - S11865-64G 0.8 0.7 0.8 64 51.2 S11865- 128G 0.4 0.3 , www.hamamatsu.com 1 Photodiode arrays with amplifiers S11865-64G/- 128G /-256G, S11866-64G-02/-128G-02 , Clock pulse frequency*5 S11865-64G, S11866-64G-02 Line rate*6 S11865- 128G , S11866-128G-02 S11865


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PDF S11865-64G/-128G/-256G S11866-64G-02/-128G-02 S11865/S11866 S8865/S8866 B1201, KMPD1135E04
2012 - M29DW128G

Abstract: 55560A B030A
Text: : 09005aef8507150c m29dw_ 128g .pdf - Rev. A 12/12 EN 1 Products and specifications discussed herein are subject , 2.7 to 3.6V 128G = 128Mb (x16) page, dual boot 70 = 70ns (80ns if VCCQ = 1.65V to VCC) NF = 56 , package, standard packing F = RoHS-compliant package, tape and reel packing PDF: 09005aef8507150c m29dw_ 128g , . 45 PDF: 09005aef8507150c m29dw_ 128g .pdf - Rev. A 12/12 EN 3 Micron Technology, Inc , . 46 46 46 47 47 48 50 52 52 56 59 61 62 64 69 71 72 74 74 PDF: 09005aef8507150c m29dw_ 128g .pdf -


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PDF 128Mb: M29DW128G 256-word 32-word 09005aef8507150c 55560A B030A
2006 - JMF602

Abstract: schematic usb flash nand Hynix 32Gb Nand flash 32Gb Nand flash toshiba hynix NAND ECC of 32Gb Nand flash memory by toshiba serial flash memory 8gb Hynix 16Gb Nand flash hynix nand flash 2gb flash controller
Text: 64G Bytes 512M x 8 Bits (4Gb) 1 CE pin 256 128G Bytes 1G x 8 Bits (8Gb) 2 CE pins 128 128G Bytes 1G x 8 Bits (8Gb) 1 CE pin 256 256G Bytes 2G x 8 Bits (16Gb) 2 CE


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PDF JMF602 JMF602 schematic usb flash nand Hynix 32Gb Nand flash 32Gb Nand flash toshiba hynix NAND ECC of 32Gb Nand flash memory by toshiba serial flash memory 8gb Hynix 16Gb Nand flash hynix nand flash 2gb flash controller
Not Available

Abstract: No abstract text available
Text: AMC-7000 AMC SATA Disk Drive Module Features AdvancedTCA AMC.0 Rev.2 front panel compliant AMC.3 Rev.1, storage signaling option One integrated 2.5” 320G/500G/ 128G (SSD) SATA disk S.M.A.R.T. support Integrated IPMI AMC.0 Single-width, Mid-size Specifications Technical Specification 1 Environmental Conditions Capacity Seek Time (track to track) Average Maximum , 320G/500G/ 128G (SSD) <2.0 msec (read), <2.5 msec (write) 12.0 /14.0 ms (read/write) <20ms (typical


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PDF AMC-7000 320G/500G/128G 3200GB AMC-7000/SATA500G 500GB AMC-7000/SSD128G AMC-7000/SATA320G 128GB
D72010

Abstract: PCI-Express 2.0 card EX-11066
Text: / Gewicht : · 120 x 60 mm / 128g Lieferumfang : · EX-11066, Treiber CD, Handbuch Highspeeds , to 95% Hardware system : · PCI Express x1 to x16 Size / Weight : · 120 x 60 mm / 128g


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PDF EX-11066 D72010 480Mbps 250MB/Sek. 5/12V EX-11066, EX-11066 D72010 PCI-Express 2.0 card
Not Available

Abstract: No abstract text available
Text: <5 ¡ 3 3> *C i 0 1 §g oi S9E OhOaOQO E E T S 'm "f 'i AVERAGE FORWARD


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PDF C10P05Q C10P06Q F10P05Q F10P06Q O-220AB C10P05Q F10P05Q F10P--Q
AP3019KTR-E1

Abstract: step-up sot-23-6 AP3019 dc-dc step-up converter sot Diode SOT-23 marking 27 sot-23-6 led driver Marking Information SOT-23-6 marking B step-up sot-23 TSOT-23-6
Text: TSOT-23-6 -40 to 85oC AP3019KTTR-E1 S9E Tape & Reel Detailed information please refer to


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PDF AP3019 AP3019 AP3019. OT-23-6 AP3019KTR-E1 TSOT-23-6 AP3019KTTR-E1 AP3019KTR-E1 step-up sot-23-6 dc-dc step-up converter sot Diode SOT-23 marking 27 sot-23-6 led driver Marking Information SOT-23-6 marking B step-up sot-23 TSOT-23-6
advantech

Abstract: SQF-P25 SLC 500 series SQF-P25S4-4G-CTE 8G nand SQF-P25M4-32G-ETE nand flash 128g
Text: -32G-ETE SQF-P25S4-64G-ETE SQF-P25M4-8G-CTE SQF-P25M4-16G-CTE SQF-P25M4-32G-CTE SQF-P25M4-64G-CTE SQF-P25M4- 128G -CTE SQF-P25M4-8G-ETE SQF-P25M4-16G-ETE SQF-P25M4-32G-ETE SQF-P25M4-64G-ETE SQF-P25M4- 128G -ETE Product


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PDF SQF-P25 G/128 15-July-2009 advantech SLC 500 series SQF-P25S4-4G-CTE 8G nand SQF-P25M4-32G-ETE nand flash 128g
2015 - Not Available

Abstract: No abstract text available
Text: -64, S11865-64, S11865-64G S8865-128, S11865-128, S11865- 128G S8866-128-02, S11866-128-02, S11866 , 2.5 2.5 3.6 8 * S8865-64, S8865-128, S11865-64, S11865-64G, S11865-128, S11865- 128G , 8 * S8865-64, S8865-128, S11865-64, S11865-64G, S11865-128, S11865- 128G KACCA0124JD 4


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PDF C9118ã C9118-01ã UL1061 AWG28æ KACCC0198JB KACCC0773JA KACC1087J12
F10B

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR M G FK 38V2228 1 2 .2 - 12.8G H z BAND 6 W INTERNALLY MATCHED GaAs FET D E SC R IPT IO N The M G F K 3 8 V 2 2 2 8 is an inte rn a lly impedance matched GaAs power F E T especially designed fo r use in 12 .2 ~ 1 2 .8 G H z band am plifiers. The herm etically sealed m etal-ceram ic package guarantees high re lia b ility . FEATURES · · · · Intern ally , 38V 2228 1 2 .2 - 12.8G H z BAND 6 W INTERNALLY MATCHED GaAs FET T Y PIC A L C H A R A C T E R IS T


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PDF 38V2228 F10B
Not Available

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR M G FK 38V2228 1 2 .2 — 12.8G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 8 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed for use in 12.2 ~ 12.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES • • Internally impedance matched High , r U I MITSUBISHI SEMICONDUCTOR M G FK 38V 2228 1 2 .2 — 12.8G H z BAND 6 W


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PDF 38V2228
Not Available

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR M GFK35V2228 1 2 .2 - 12.8G Hz BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed fo r use in 12.2 ~ 12.8 G H z band amplifiers. The herm etically sealed metal-ceramic package guarantees high reliability. FEATURES · · · · Internally impedance matched High ou tp ut power , M G F K 35V 2228 1 2 .2 - 12.8G H z BAND 3 W INTERNALLY MATCHED GaAs FET TYPICAL


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PDF GFK35V2228
"7 segment display" 8011

Abstract: MIC8011
Text: 3 S19 S71 3 S19 set S8C 3 S18 3 S18 S9E 3 S17 S9E 3 S17 S10C I S16 S10E I S16 S11C s m 1 S15 1 S15 S


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PDF MIC8011 display28 MIC8011-01BN MIC8011-02BN 48-Pin DIPS-01 52-Pin "7 segment display" 8011
1995 - CC210D

Abstract: DSP56001 5b s93 1f s63 8675DC
Text: $83D604 S_9E $AA0A5B S_B7 $831C31 S_9F $A7BD23 S_B8 $8275A1 B-4 MOTOROLA


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PDF DSP56001. 03242B 36BA20 0647D9 398CDD 096A90 3C56BA 3F174A 0FAB27 41CE1E CC210D DSP56001 5b s93 1f s63 8675DC
Not Available

Abstract: No abstract text available
Text: 1TE Weight per unit 128g D V SC R 2 7 5 4 5 125AgL min. recommended cross section 6 mm


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PDF IEC-81643-1 275/350V 125AgL 25kA/50Hz 35mm2 25mmz 50V/0 25V/3A
Not Available

Abstract: No abstract text available
Text: Operating Temperature: -55'C ~ + 105'C Mechanical Characteristics: Insertion Force: 128g avg.(0.50mm sq


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PDF UL94V-0. 150/J! 5000M 100mA T017757 000005c!
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