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Advantech Co Ltd
SQF-SMSM4-32G-S9E SOLID STATE DISK, SQF MSATA 630 32G MLC (-40 85C)
SQF-SMSM4-32G-S9E ECAD Model
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SQF-SMSM4-32G-S9E datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
SQF-SMSM4-32G-S9E SQF-SMSM4-32G-S9E ECAD Model Advantech Uncategorized - Miscellaneous - SQF MSATA 630 32G MLC Original PDF

SQF-SMSM4-32G-S9E Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - M02142

Abstract: M02170 M82359 M83241 M83261 M83263 M02172 M21528 M82351 M82506
Text: Conditioning (up to 3.2G ) 4x4 Crosspoint Switch with Quad Channel Multi-rate Video Reclocker for SD/HD (42M to 3.2G ) 4x4 Crosspoint Switch with Integrated Multi-rate CDRs and Amplif-EyeTM (42M-3.2G) 17x17 3.2G Crosspoint Switch with Input Equalization 34x34 3.2G Crosspoint Switch with Input Equalization 80x80 6.5G Crosspoint Switch with Signal Integrity 72x72 3.2G Crosspoint Switch with Input Equalization & Pre-Emphasis 72x72 3.2G Crosspoint Switch with Integrated CDR, Input Equalization &


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PDF M83263 650Mhz, M83261 M83262 M83160 M83251 533MHz, M02142 M02170 M82359 M83241 M83261 M83263 M02172 M21528 M82351 M82506
Not Available

Abstract: No abstract text available
Text: <5 ¡ 3 3> *C i 0 1 §g oi S9E OhOaOQO E E T S 'm "f 'i AVERAGE FORWARD


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PDF C10P05Q C10P06Q F10P05Q F10P06Q O-220AB C10P05Q F10P05Q F10P--Q
AP3019KTR-E1

Abstract: step-up sot-23-6 AP3019 dc-dc step-up converter sot Diode SOT-23 marking 27 sot-23-6 led driver Marking Information SOT-23-6 marking B step-up sot-23 TSOT-23-6
Text: TSOT-23-6 -40 to 85oC AP3019KTTR-E1 S9E Tape & Reel Detailed information please refer to


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PDF AP3019 AP3019 AP3019. OT-23-6 AP3019KTR-E1 TSOT-23-6 AP3019KTTR-E1 AP3019KTR-E1 step-up sot-23-6 dc-dc step-up converter sot Diode SOT-23 marking 27 sot-23-6 led driver Marking Information SOT-23-6 marking B step-up sot-23 TSOT-23-6
2003 - HL6331G

Abstract: HL6332G ODE-208-819C
Text: HL6331G/ 32G Low Operating Current Visible Laser Diode ODE-208-819C (Z) Rev.3 Jan. 2003 Description The HL6331G/ 32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW , oscillation Package Type · HL6331G/ 32G : G2 Internal Circuit · HL6331G 1 Internal Circuit · HL6332G 1 3 PD LD 2 3 LD PD 2 HL6331G/ 32G Absolute Maximum Ratings (TC = 25 , mA PO = 10 mW, VR(PD) = 5 V Rev.3, Jan. 2003, page 2 of 7 HL6331G/ 32G Optical Output


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PDF HL6331G/32G ODE-208-819C HL6331G/32G HL6331G/32G: HL6331G HL6332G HL6331G HL6332G ODE-208-819C
2000 - HL6331G

Abstract: HL6332G Hitachi DSA0064
Text: HL6331G/ 32G Low Operating Current Visible Laser Diode ADE-208-819B (Z) 3rd Edition Dec. 2000 Description The HL6331G/ 32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW , Type · HL6331G/ 32G : G2 Internal Circuit · HL6331G 1 Internal Circuit · HL6332G 1 3 PD LD 2 3 LD PD 2 HL6331G/ 32G Absolute Maximum Ratings (TC = 25°C) Item Symbol , HL6331G/ 32G Optical Output Power vs. Forward Current 10 TC = -10°C 25 8 40 60 6 4 2


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PDF HL6331G/32G ADE-208-819B HL6331G/32G HL6331G/32G: HL6331G HL6332G HL6331G HL6332G Hitachi DSA0064
2001 - Hitachi DSA00279

Abstract: No abstract text available
Text: HL6331G/ 32G Low Operating Current Visible Laser Diode ADE-208-819B (Z) 3rd Edition Dec. 2000 Description The HL6331G/ 32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW , voltage: 2.4 V Max · Operating temperature : +60°C · TM mode oscillation Package Type · HL6331G/ 32G : G2 , HL6331G/ 32G Absolute Maximum Ratings (TC = 25°C) Item Optical output power LD reverse voltage PD , Condition Kink free Rev.3, Dec. 2000, page 2 of 8 HL6331G/ 32G Typical Characteristic Curves Optical


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PDF HL6331G/32G ADE-208-819B HL6331G/32G HL6331G/32G: HL6331G HL6332G D-85622 Hitachi DSA00279
2011 - Not Available

Abstract: No abstract text available
Text: Datasheet R8C/ 32G Group, R8C/32H Group RENESAS MCU R01DS0026EJ0100 Rev.1.00 Nov 16, 2011 1. 1.1 Overview Features The R8C/ 32G Group, R8C/32H Group of single-chip MCUs incorporates the R8C , system components. The R8C/ 32G Group has data flash (1 KB × 4 blocks) with the background operation (BGO , Page 1 of 54 R8C/ 32G Group, R8C/32H Group 1. Overview 1.1.2 Specifications Tables 1.1 and 1.2 outline the Specifications for R8C/ 32G Group. Tables 1.3 and 1.4 outline the Specifications


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PDF R8C/32G R8C/32H R01DS0026EJ0100
Not Available

Abstract: No abstract text available
Text: FXP1500- 32G AC-DC Front-End & FXR-3-32G Power Shelf Data Sheet Features · · · · · · · · · · · · , parallel up to three FXP1500- 32G PSUs in a 19" rack, see rack section (below) for power shelf details. Description The FXP1500- 32G is a 1500 watt, power factor corrected (PFC) front-end, which provides a , , factory automation, semiconductor equipment, and other distributed power applications. The FXP1500- 32G , current limit. The FXP1500- 32G meets international safety standards and displays the CE-Mark for the


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PDF FXP1500-32G FXR-3-32G 36VDC 19-inch FXP1500/1800 FXP1500" 31-JAN
SQF-P10S2-4G-ET2

Abstract: SQF-P10S2-2G-CT2 SQF-P10 SQF-P10S2-8G-CT2 SQF-P10S2-2G-ET2 SQF-P10S1-1G-ET2 SQF-P10S4-32G-ET2 SQF-P10S4-32G-CT2 SQF-P10S2-16G-CT2 SQF-P10S
Text: resistance 256MB/1G/2G/4G/8G/16G/ 32G Toshiba 43nm SLC CF 3.0, PC Card, Socket's Services CF Type-I 3.3 V , -2G-CT2 SQF-P10S2-4G-CT2 SQF-P10S2-8G-CT2 SQF-P10S2-16G-CT2 SQF-P10S4- 32G -CT2 SQF-P10S1-1G-ET2 SQF-P10S2-2G-ET2 SQF-P10S2-4G-ET2 SQF-P10S2-8G-ET2 SQF-P10S2-16G-ET2 SQF-P10S4- 32G -ET2 Product Description SQFlash 256MB CF , 16G CF 43nm, 2-CH, DMA (0 ~ 70° C) SQFlash 32G CF 43nm, 4-CH, DMA (0 ~ 70° C) SQFlash 1G CF 43nm, 1 , 32G CF 43nm, 4-CH, DMA (-40 ~ 85° C) Online Download www.advantech.com/products All product


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PDF SQF-P10 256MB/1G/2G/4G/8G/16G/32G SQF-P10S4-32G-ET2 256MB 9-May-2011 SQF-P10S2-4G-ET2 SQF-P10S2-2G-CT2 SQF-P10 SQF-P10S2-8G-CT2 SQF-P10S2-2G-ET2 SQF-P10S1-1G-ET2 SQF-P10S4-32G-CT2 SQF-P10S2-16G-CT2 SQF-P10S
Not Available

Abstract: No abstract text available
Text: FXP1500- 32G AC-DC Front-End & FXR-3-32G Power Shelf Data Sheet Features • • • • â , three FXP1500- 32G PSUs in a 19" rack, see rack section (below) for power shelf details. Description The FXP1500- 32G is a 1500 watt, power factor corrected (PFC) front-end, which provides a , , factory automation, semiconductor equipment, and other distributed power applications. The FXP1500- 32G , set the output current limit. The FXP1500- 32G meets international safety standards and displays the


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PDF FXP1500-32G FXR-3-32G 36VDC 19-inch FXP1500/1800 FXP1500" 31-JAN
1999 - Hitachi DSA00276

Abstract: No abstract text available
Text: HL6331/ 32G Low Operating Current Visible Laser Diode ADE-208-819A (Z) 2nd Edition Dec. 1999 Description The HL6331/ 32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW , mode oscillation : 635 nm Typ : 10 mW CW : 55 mA Typ : 2.4 V Max : +60°C Package Type · HL6331/ 32G , 2 HL6331/ 32G Absolute Maximum Ratings (TC = 25°C) Item Optical output power LD reverse voltage , Kink free 2 HL6331/ 32G Typical Characteristic Curves Oputical Output Power vs. Forword Current


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PDF HL6331/32G ADE-208-819A HL6331/32G HL6331/32G: HL6331G HL6332G Hitachi DSA00276
2011 - 2C14H

Abstract: No abstract text available
Text: Datasheet R8C/ 32G Group, R8C/32H Group RENESAS MCU 1. R01DS0026EJ0100 Rev.1.00 Nov 16, 2011 Overview 1.1 Features The R8C/ 32G Group, R8C/32H Group of single-chip MCUs , , reduces the number of system components. The R8C/ 32G Group has data flash (1 KB × 4 blocks) with the , Rev.1.00 Nov 16, 2011 Page 1 of 54 R8C/ 32G Group, R8C/32H Group 1.1.2 1. Overview Specifications Tables 1.1 and 1.2 outline the Specifications for R8C/ 32G Group. Tables 1.3 and 1.4 outline the


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PDF R8C/32G R8C/32H R01DS0026EJ0100 component9044 2C14H
2010 - 36 pin FCI connector 136

Abstract: SR-332 VAC 002 -08 S4 FXR-3-32G
Text: FXP1500- 32G AC-DC Front-End & FXR-3-32G Power Shelf Data Sheet Features , -3-32G shelf provides capability to parallel up to three FXP1500- 32G PSUs in a 19" rack, see rack section (below) for power shelf details. Description The FXP1500- 32G is a 1500 watt, power factor corrected , distributed power applications. The FXP1500- 32G provides for true hot-swap with AC and DC connections at the , voltage, and set the output current limit. The FXP1500- 32G meets international safety standards and


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PDF FXP1500-32G FXR-3-32G 36VDC 19-inch FXP1500/1800 FXP1500" 19-APR-10 36 pin FCI connector 136 SR-332 VAC 002 -08 S4
2011 - R5F21324GK

Abstract: 2732 rom
Text: 16 User's Manual R8C/ 32G Group, R8C/32H Group User's Manual: Hardware RENESAS MCU R8C Family , revisions. Refer to the text of the manual for details. The following documents apply to the R8C/ 32G Group , Description Hardware overview and electrical characteristics Document Title R8C/ 32G Group, R8C/32H Group Datasheet R8C/ 32G Group, R8C/32H Group User's manual: Hardware Document No. R01DS0026EJ0100 User's manual , . 16 R8C/ 32G Group


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PDF R8C/32G R8C/32H R01UH0139EJ0100 R5F21324GK 2732 rom
1999 - TM 1628 IC

Abstract: ic TM 1628 TM 1628 Datasheet IC TM 1628 Datasheet TM 1628 Hitachi DSA00164
Text: HL6331/ 32G Low Operating Current Visible Laser Diode ADE-208-819 (Z) Target Specification 1st Edition Sep. 1999 Description The HL6331/ 32G are 0.63 µm band AlGaInP 10mW laser diodes with a , : 2.4 V Max : +60°C Internal Circuit Package Type · HL6331/ 32G : G2 Internal Circuit · HL6331G 1 Internal Circuit · HL6332G 1 3 PD LD 2 3 LD PD 2 HL6331/ 32G , - mA PO = 10 mW, VR(PD) = 5V 2 HL6331/ 32G Package Dimensions 9.0 +0 ­0.025 1.0 ±


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PDF HL6331/32G ADE-208-819 HL6331/32G HL6331/32G: HL6331G TM 1628 IC ic TM 1628 TM 1628 Datasheet IC TM 1628 Datasheet TM 1628 Hitachi DSA00164
2011 - R5F21324GK

Abstract: R5F21324GKSP PLSP0020JB-A 001EH
Text: / 32G Group, R8C/32H Group RENESAS MCU 1. R01DS0026EJ0010 Rev.0.10 Feb 08, 2011 Overview 1.1 Features The R8C/ 32G Group, R8C/32H Group of single-chip MCUs incorporates the R8C CPU core , of system components. The R8C/ 32G Group has data flash (1 KB × 4 blocks) with the background , document are tentative and subject to change. R8C/ 32G Group, R8C/32H Group 1.1.2 1. Overview Specifications Tables 1.1 and 1.2 outline the Specifications for R8C/ 32G Group. Tables 1.3 and 1.4 outline the


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PDF R8C/32G R8C/32H R01DS0026EJ0010 includi9044 R5F21324GK R5F21324GKSP PLSP0020JB-A 001EH
GBDriver

Abstract: 16G nand flash NAND 32G NAND Flash usb 3 controller 32G nand flash NAND Flash Controller tdk BSF-K01JB MARKING W04 TDK GBDriver NAND Flash Controller tdk gbdriver
Text: RoHS EU Directive 2002/95/EC PBB PBDE GBDriver XR Controller IC For NAND Type Flash Memory To 16G Bytes, GBDriver series XR type 1NAND(64M 16G )8(16G ) 32G 20063 NAND 16G 32G TOP VIEW A1 Corner marking ATA/IDE GBD XR1 NAND OS 033ZA902 A B C D E F G H J K 9 10 A1 Corner marking 10 9 8 7 6 5 4 3 2 1 , 1NAND(1G 16G )4(8G ) 32G (4G ) CompactFlashTMSanDisk GBDriver TDK BSF-K01JB


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PDF 2002/95/EC 033ZA902 8mmVFBGA100pin BSF-K01JB GBDriver 16G nand flash NAND 32G NAND Flash usb 3 controller 32G nand flash NAND Flash Controller tdk MARKING W04 TDK GBDriver NAND Flash Controller tdk gbdriver
MAX3800

Abstract: 25G100
Text: Media Performance (PRBS-7) Length Bit Rate Deterministic (ft) (b/s) Jitter (UI) 3.2G 0.04 W.L. Gore­ type 89 matched 115 2.5G 0.03 50 coax pair 622M 0.01 3.2G 0.16 RG179B coax 2.5G 100 0.09 single-ended 75 622M 0.04 3.2G >0.67 Belden 9207 2.5G 100 0.20 twin-axial 100 622M 0.04 3.2G 0.16 Madison #14887 shielded twisted2.5G 50 0.12 pair 100 622M 0.02 3.2G 0.09


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PDF HFDN-10 MAX3800 MAX3800 100ft 30mVp-p. 25G100
2007 - HL6331G

Abstract: HL6332G
Text: HL6331G/ 32G ODE-208-032A (Z) Rev.1 Oct. 21, 2005 Low Operating Current Visible Laser Diode Description The HL6331G/ 32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW , measurement. Features · · · · · · · Package Type · HL6331G/ 32G : G2 Visible light output: p = , .1 Oct. 21, 2005 page 1 of 4 Test Conditions 6 (mW) / (I(8mW) ­ I(2mW) PO = 10 mW HL6331G/ 32G , . 21, 2005 page 2 of 4 60 20 30 40 HL6331G/ 32G Package Dimensions As of July, 2002


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PDF HL6331G/32G ODE-208-032A HL6331G/32G HL6331G/32G: HL6331G HL6332G HL6331G HL6332G
2008 - Not Available

Abstract: No abstract text available
Text: HL6331G/ 32G Low Operating Current Visible Laser Diode Description The HL6331G/ 32G are 0.63 m , temperature: +60°C TM mode oscillation Package Type · HL6331G/ 32G : G2 Internal Circuit · HL6331G 1 3 , , VR(PD) = 5 V Rev.0 Aug. 01, 2008 page 1 of 4 HL6331G/ 32G Typical Characteristic Curves , ) Rev.0 Aug. 01, 2008 page 2 of 4 HL6331G/ 32G Package Dimensions As of July, 2002 Unit: mm , page 3 of 4 HL6331G/ 32G Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses


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PDF HL6331G/32G HL6331G/32G ODE2016-00 HL6331G/32G: HL6331G HL6332G
2013 - 50 33g on

Abstract: 4822a
Text: 8g 33g 8g 6g 11g 14g 55g 32g 34g 6g 8g 3g 4g 20g 25g 8g 6g 11g 14g 20g 25g 55g 11g 20g 3g 4g 32g 34g 33g 55g 14g 25g 11g 14g 8g 6g 32g 34g 3g 4g 20g 25g 6g 8g 11g 14g 55g 3g 4g Housing 2A 1A 2C 1C 2B 1B , 0.7 0.7 0.7 0.7 1 1.1 Weight [g] 6g 8g 20g 25g 33g 55g 14g 11g 32g 34g 11g 14g 20g 25g 11g 14g 20g 25g 6g 8g 11g 14g 20g 25g 32g 34g 33g 55g 32g 33g 34g 55g 55g 55g Housing 2B 1B 2D 1D 2G 2H 1C 2C 2E 1E


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PDF com/pg81 DKFP-B22B-021Q DKFP-B21B-021Q DKFP-D22D-0210 DKFP-D21D-0210 DKFP-G22G-0210 DKFP-H22H-0218 DKFP-C21C-024K DKFP-C22C-024K DKFP-E22E-026Q 50 33g on 4822a
"7 segment display" 8011

Abstract: MIC8011
Text: 3 S19 S71 3 S19 set S8C 3 S18 3 S18 S9E 3 S17 S9E 3 S17 S10C I S16 S10E I S16 S11C s m 1 S15 1 S15 S


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PDF MIC8011 display28 MIC8011-01BN MIC8011-02BN 48-Pin DIPS-01 52-Pin "7 segment display" 8011
Iskra

Abstract: rm22g RM06 iskra by 305 RM8-121-08 iskra by 236 RM461 RM14 ISKRA XL2000-1-16 FERRITE RM5
Text: distortion broadband transmission at low signal modulation, where 19G, 22G, 12G and 32G materials are , 15P 12G 3000 + 40 / - 30 % 4294 RM 12G 3/3000 ­ 17P 32G 3500 + 40 / - 30 % 5000 RM 32G 3/3500 ­ 17P Core in accordance with IEC 431! RM cores are supplied as set! ISKRA , 3700 +40 / -30 % 4985 RM 12G 4 / 3700 - 17 P 32G 55G 400 ± 25 % 19G 45G Designation 26G 35G µe 10G Material AL value [nH] 4800 +40 / -30 % 6467 RM 32G 4


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PDF
2002 - madison cable 30AWG

Abstract: No abstract text available
Text: Media Performance (PRBS-7) Length Bit Rate Deterministic (ft) (b/s) Jitter (UI) 3.2G 0.04 W.L. Gore­ 2.5G type 89 matched 0.03 115 50 coax pair 622M 0.01 3.2G 0.16 RG179B coax 2.5G 0.09 100 single-ended 75 622M 0.04 3.2G >0.67 Belden 9207 2.5G 0.20 100 twin-axial 100 622M 0.04 3.2G 0.16 Madison #14887 2.5G shielded twisted0.12 50 pair 100 622M 0.02 3.2G 0.09 Stripline, FR4 4.2 2.5G 0.06 (50in) 6mil wide


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PDF HFDN-10 MAX3800 7hfdn100 100ft MAX3800 30mVp-p. madison cable 30AWG
2005 - Not Available

Abstract: No abstract text available
Text: HL6331G/ 32G Low Operating Current Visible Laser Diode Description The HL6331G/ 32G are 0.63 µm , Operating temperature : +60°C TM mode oscillation Package Type · HL6331G/ 32G : G2 Internal Circuit · , PO = 10 mW PO = 10 mW, VR(PD) = 5 V Rev.1 Oct. 21, 2005 page 1 of 4 HL6331G/ 32G Typical , ) Rev.1 Oct. 21, 2005 page 2 of 4 HL6331G/ 32G Package Dimensions As of July, 2002 Unit: mm , page 3 of 4 HL6331G/ 32G Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses


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PDF HL6331G/32G HL6331G/32G ODE-208-032A HL6331G/32G: HL6331G HL6332G
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