The Datasheet Archive

SPU23N05 datasheet (5)

Part Manufacturer Description Type PDF
SPU23N05 Infineon Technologies SIPMOS Power-Transistor Original PDF
SPU23N05 Siemens Original PDF
SPU23N05 Siemens SIPMOS Power Transistor Original PDF
SPU23N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
SPU23N05L Siemens N-channel SIPMOS power transistor Original PDF

SPU23N05 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - P-TO252

Abstract: SPD23N05 SPU23N05
Text: SPD23N05 SPU23N05 SIPMOS ® Power Transistor · N channel · Enhancement mode · , Q67040 - S4138 - A2 SPU23N05 55 V 22 A 0.06 P-TO251 Q67040 - S4131 - A2 Maximum , Semiconductor Group V W 55 1 29/Jan/1998 SPD23N05 SPU23N05 Maximum Ratings Parameter , SPD23N05 SPU23N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter , SPU23N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol


Original
PDF SPD23N05 SPU23N05 P-TO252 Q67040 S4138 P-TO251 S4131 P-TO252 SPD23N05 SPU23N05
Not Available

Abstract: No abstract text available
Text: SIEMENS SIPMOS ® Power Transistor SPD23N05 SPU23N05 · N channel · Enhancement mode · , SPU23N05 VDS 55 V 55 V k> 22 A 22 A *DS(on) 0.06 Q 0.06 Q Package P-T0252 P-T0251 Ordering , category, DIN IEC 68-1 Symbol ri ^stg ^IhJC RthJA %iJA Values SPD23N05 SPU23N05 Unit °C -55 . + , Parameter Symbol min. Dynamic Characteristics Transconductance ^ D S - 2 * ;D 9fs b SPD23N05 SPU23N05 , SPU23N05 Values typ. max. Unit k A 22 'sm 88 ^SD . V 1.2 1.8 ns 55 85 fjC 0.12 0.18


OCR Scan
PDF SPD23N05 SPU23N05 P-T0252 P-T0251 Q67040 S4138 S4131
1998 - P-TO252

Abstract: SPD23N05 SPU23N05
Text: SPD23N05 SPU23N05 Preliminary data SIPMOS ® Power Transistor · N channel · Enhancement , P-TO252 Q67000-. . . . - . . SPU23N05 55 V 22 A 0.06 P-TO251 Q67000-. . . . - . . , Semiconductor Group V W 55 1 20/Nov/1997 SPD23N05 SPU23N05 Preliminary data Maximum , SPD23N05 SPU23N05 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise , , VGS =0 to 7 V Gate charge total nC V - 3 5.9 - 20/Nov/1997 SPD23N05 SPU23N05


Original
PDF SPD23N05 SPU23N05 P-TO252 Q67000-. P-TO251 20/Nov/1997 P-TO252 SPD23N05 SPU23N05
23N05

Abstract: No abstract text available
Text: SPD 23N05 Infineon t« c h n o l o g ¡ o s i m p * o V e d R o ,°"’ SIPMOS® PowerTransistor Product Summary Features Drain source voltage • N channel • Enhancement mode • Avalanche rated ^DS Drain-Source on-state resistance Continuous drain current 55 V k> Q . 22 f í DSÍon) 0.05 A • dv/df rated • 175‘ C operating temperature Type Package Ordering Code SPD23N05 P-T0252 Q67040-S4152 Tape and Reel SPU23N05 P-T0251


OCR Scan
PDF 23N05 SPD23N05 P-T0252 Q67040-S4152 SPU23N05 P-T0251 Q67040-S4132-A2 S35bQ5 Q133777 SQT-89 23N05
1999 - 23N05

Abstract: transistor D.A.T.A. book
Text: SPD 23N05 SIPMOS Power Transistor Features · N channel · Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.05 22 V A Enhancement mode · Avalanche rated · dv/dt rated · 175°C operating temperature Type SPD23N05 SPU23N05 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 D Pin 3 S Q67040-S4138-A2 Tape and Reel Q67040-S4132-A2 Tube Maximum Ratings, at Tj = 25 °C, unless otherwise specified


Original
PDF 23N05 SPD23N05 SPU23N05 P-TO252 P-TO251 Q67040-S4138-A2 Q67040-S4132-A2 SPD23N05 23N05 transistor D.A.T.A. book
1998 - BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 bup 313 BUP 304 SGU06N60 615n60 BUZ 840 BUP 307D
Text: SPU07N20 SPU08N05L SPU08N10 SPU08P05 SPU09N05 SPU10N10 SPU13N05L SPU14N05 SPU21N05L SPU23N05 , 2.00 Type SPU30N03 SPU28N03 SPU30N03L SPU28N03L SPU31N05 SPU23N05 SPU14N05 SPU09N05 , 10.00 8.40 7.00 2.00 Type SPU30N03 SPU28N03 SPU30N03L SPU28N03L SPU31N05 SPU23N05 SPU14N05


Original
PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 bup 313 BUP 304 SGU06N60 615n60 BUZ 840 BUP 307D
1999 - 23N05

Abstract: P-TO252 SPD23N05 SPU23N05
Text: SPD 23N05 SIPMOS® Power Transistor Features Product Summary · N channel Drain source voltage VDS · Drain-Source on-state resistance RDS(on) Continuous drain current ID Enhancement mode · Avalanche rated 55 V 0.05 22 A · dv/dt rated · 175°C operating temperature Type Package Ordering Code Packaging SPD23N05 P-TO252 Q67040-S4152 P-TO251 Pin 2 Pin 3 G D S Tape and Reel SPU23N05 Pin 1 Q67040-S4132-A2 Tube Maximum


Original
PDF 23N05 SPD23N05 P-TO252 Q67040-S4152 P-TO251 SPU23N05 Q67040-S4132-A2 23N05 P-TO252 SPD23N05 SPU23N05
BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 mosfet BUZ 349 spd14n05 mosfet buz 90a BUZ 100 MOSFET BUZ MOSFET 111S bup202 BUP200
Text: SPU13N05L SPU14N05 SPU21N05L SPU23N05 SPU28N03 SPU28N03L SPU28N05L SPU30N03 SPU30N03L SPU31N05 30 30 30


OCR Scan
PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 mosfet BUZ 349 spd14n05 mosfet buz 90a BUZ 100 MOSFET BUZ MOSFET 111S bup202 BUP200
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
Text: No file text available


Original
PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
Supplyframe Tracking Pixel