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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

SMD Transistor g16 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
SMD A4

Abstract: ed83018-31 G16 T1128 50ML
Text: 16-50mil G16 -50ML * For SMD add "G" to end ot P/N *w 16 Pin 50 mil is SMD only (no additional , « Schem. Style T-13103 Rise Times Compatible with Standards SMD Versions Available Operating Temp , -13100 T-13100 T-13100 Low Profile DIP & Gullwing SMD Packages, See pg. 30, fig. 12, 13 & 15 G , -13102 T-13103 A4 (8 Pin) - A8 (16 Pin) G16 -50ML 0.400“ Wide DIP 0.300’ Lead Spacing See pg , Electrical Specifications at 25°C Wide DIP DIP/ SMD (A4/A8) (D/G) Turns P/N Ratio P/N T-13103 T


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PDF T7296 XR-T7296 78P236 T-13103 16-50mil G16-50ML T-11210* T-11212* 16-Pin T-11213* SMD A4 ed83018-31 G16 T1128 50ML
2006 - SMD Transistor g16

Abstract: g16 smd smd G16
Text: . The product itself will remain within RoHS complaint version Descriptions The 17-21 SMD Taping is , . 1 Page: 1 of 10 Device No:SZDSE-171- G16 Prepared date:17-Oct-2005 Prepared by:Liu tao , ://www.everlight.com Rev. 1 Page: 2 of 10 Device No:SZDSE-171- G16 Prepared date:17-Oct-2005 Prepared by , Electronics Co., Ltd. http://www.everlight.com Rev. 1 Page: 3 of 10 Device No:SZDSE-171- G16 , Rev. 1 Page: 4 of 10 Device No:SZDSE-171- G16 Prepared date:17-Oct-2005 Prepared by:Liu tao


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PDF 17-21/G6C-AP1Q1B/3T SZDSE-171-G16 17-Oct-2005 SMD Transistor g16 g16 smd smd G16
sma 42056

Abstract: sm 42056 A25 SMD SMD L31 A27 smd A29 SMD g31 motherboard A36 SMD g28 SMD SMD resistors K24
Text: ] (_DH) E28, via 0R link A21 VSS20 GND A22 SM_D [23] N24 2459.83 A23 SM_D [22] N23 2311.43 A24 SM_D [21] J23 2739.75 A25 SM_D [20] N22 2297.58 A26 SM_D [19] J22 2130.77 A27 SM_D [18] N21 2262.4 A28 SM_D [17] J21 2100.57 A29 SM_D [16] M21 2240.71 A3 DM_D[27] B31 2527.56 A30 DNU16 N/C A31 DNU17 N/C A32 SM_D [7] M19 2218.91 A33 SM_D [6] N19 2383.46 A34 SM_D [5] K24 2747.41 A35 SM_D [4] L26 3081.19 A36 SM_D [3] G27 2826.08 A37 SM_D [2] H28 2559.33 A38 SM_D [1


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PDF SEAF-40-06 VSS20 DNU16 DNU17 DNU14 sma 42056 sm 42056 A25 SMD SMD L31 A27 smd A29 SMD g31 motherboard A36 SMD g28 SMD SMD resistors K24
2001 - 50537R

Abstract: ADSL G7000 DMT Chipset TNETD3000
Text: following page) EP10 - SMD SUGGESTED PAD LAYOUT Chipset Titanium Fo urte , -RT, -Plus and G16 , 1330 Watertown, SD 57201-6330 USA Chi pset Titanium Fo urte , -RT, -Plus and G16 Titanium Fo urte , -RT, -Plus and G16 Titanium Fo urte , -Plus and G16 Appl i cati on POTS DSLAMs with Ac tiv e Te , Microelectronics ADSL recommendations EP13 - SMD DigitalTelecom Features · Designs for both IEC950 and UL1459 , EP13 - SMD EP13 - SMD EP13 - TH EP13 - SMD EP13 - TH EP13 - SMD EP13 - TH EP13 - SMD EP13 - TH EP13 -


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PDF IEC950 51425R 51065R 51148R MTK20850 MTK20140, Box00 50537R ADSL G7000 DMT Chipset TNETD3000
1999 - Not Available

Abstract: No abstract text available
Text: ATM Interface Transformers Electrical Specifications at 25o C Turns OCL Part Ratio Min. Number +3% ( µH ) Designed for 155Mbps ATM applications over UTP-5 cable SMD versions available on Tape & Reel Supports 100 Base-X and Twisted Pair FDDI Supports either transmit or receive , 15 10 1 9 G16 -50ML T-15600 9806 T-15600 & T-15601 Dimensions in Inches (mm) .800 , SCHEMATICS 16-Pin 50 mil Package See pg. 40, fig. 7 G16 -50ML T-15400 9806 For other values &


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PDF 155Mbps T-15600 T-15601 16-Pin T-15602 T-15603 T-15400 T-15402 T-15403
1999 - Not Available

Abstract: No abstract text available
Text: 16 Pin F-1504 6 3 1:1:1 85 0.25 200 10.0 16 Pin DIP & SMD 6, 8, 14 & 16 Pin (Add G or J for SMD ), See pg. 40, fig. 4, 5, & 6 D G J 50 MIL Part Number F , mil Package See pg. 40, fig. 7 G16 -50ML F-1507 9752 *Crosstalk Impedance 1000 - 50


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PDF 16-Pin 14-Pin F-1500 F-1501 F-1502 F-1509 G16-50ML F-1507
1996 - extra bass circuit diagram

Abstract: extra bass circuit bass control in stereo amplifier bass treble control circuit TDA 7875 tda power amplifier circuit diagram TDA audio power amplifier TDA i2c tone volume HBM 04-01 digital BASS BOOST TREBLE
Text: Gain G16 -28 0 dB 1 Analogous values are apply for feeding in on pins 25 and 26. Input Level Control Min. gain G13-1 G14-1 G15-28 G16 -28 0 dB Max. gain G13-1 G14-1 G15-28 G16 -28 25 dB 01,0A Vinp 10 1 Stepwidth G13-1 G14-1 G15-28 G16 -28 2.5 dB , Volume Control Max. gain G13-1 G14-1 G15-28 G16 -28 0 dB Min. gain G13-1 G14-1 G15-28 G16 -28 ­ 78.25 dB 02,00; 03,00 Vol. 0; Loud. OFF Tracking error G13-14 G15-16 G13


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PDF 4350X P-DSO-28-1 GPS05123 extra bass circuit diagram extra bass circuit bass control in stereo amplifier bass treble control circuit TDA 7875 tda power amplifier circuit diagram TDA audio power amplifier TDA i2c tone volume HBM 04-01 digital BASS BOOST TREBLE
Not Available

Abstract: No abstract text available
Text: 10 BASE-T & Ethernet Transformers -1 6 Pin 50 mil SMD IEEE 802.3 C om patible High Isolation 2000Vrm s / Fast Rise Tim es (10BA SE 2 , 10BASE 5, & 10BASE T) M eets ECM A Requirem ents _ T-140XX Series 50 mil 16-Pin Gullwing SMD (Tape & Reel Avail.) See pg. 30, fig. 15 16 Pin , _ PRI. G16 -50ML _ m ru PR I. PRI. L I L Lil LJ liJ liJ LJ Lil l iJ ± z , DIP P/N (±5%) Sec. AU ^ jU l/- 16 Pin DIP & SMD Packages (Add G or J to P/N for SMD ) See


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PDF 2000Vrm 10BASE T-140XX 16-Pin G16-50ML
smd a48

Abstract: agilent 4263B smd b38
Text: Coilmaster Electronics Co., Ltd. 9F-3 No.398, Huan Bei Rd. Chung Li City, Taoyuan 320, Taiwan Tel : +886-3-422-8279 Fax : +886-3-422-8734 E-mail :info@coilmaster.com.tw Web Site : www.coilmaster.com.tw SQH43 SERIES ~ SMD Power Inductors PART NUMBERING SYSTEM SQH 4 TYPE 3 680K , . D=3.4 Max D=3.0 Max RECOMMENDED PATTERNS UNITmm G=1.6 Min. H=3.2 Ref. 1/2 I , : www.coilmaster.com.tw SQH43 SERIES ~ SMD Power Inductors SPECIFICATION TABLE PART NUMBER INDUCTANCE (H


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PDF SQH43 SQH43z SQH43-152K-LF SQH43-182K-LF SQH43-4R7M-LF SQH43-3R3M-LF SQH43-2R2M-LF SQH43-1R5M-LF SQH43-222K-LF 4263B smd a48 agilent 4263B smd b38
2000 - T-14012

Abstract: 10BASET2 T-13001 T-13000 T-14014 13000 14800 14010 T-14028 10 BASE-T Transformers
Text: Pin 100 mil DIP/ SMD Packages (Add G or J to P/N for SMD ) See pg. 40, fig. 4, 5 & 6 D Fast Rise Times Meets ECMA Requirements IEEE 802.3 Compatible (10BASE 2, 10BASE 5, & 10BASE T) G16 , Choke 16 2 SMD versions available on Tape & Reel 9 10BASET2 - 8/97 15801 Chemical , 0.885 (22.48) 0.205 (5.21) Figure. 4 Gullwing Style SMD (Per Data Sheet, May Require "G" suffix , ) G16-L 16 0.885 (22.48) 0.205 (5.21) Figure. 5 J - Bend Style SMD (May Require "J" suffix


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PDF 2000Vrms 10BASE G16-50ML T-14010 T-13010 T-13011 T-13000 T-13012 T-14012 10BASET2 T-13001 T-13000 T-14014 13000 14800 14010 T-14028 10 BASE-T Transformers
1999 - Not Available

Abstract: No abstract text available
Text: Package See pg. 40, fig. 7 G16 -50ML T-14001 9752 16 Pin DIP/ SMD Packages (Add G or J to P/N for SMD ) See pg. 40, fig. 4, 5 & 6 High Isolation 2000 VRMS Fast Rise Times Transfer Molded DIP / SMD Packages D Electrical Specifications at 25o C Isolation 2000Vrms 50 Mil 100 Mil DIP P/N , / SMD Packages Electrical Specifications at 25o C Isolation 2000 VRMS 50 Mil 100 Mil DIP P/N DIP , -10926 T-10927 T-10928 SMD versions available on Tape & Reel Ethernet Application Transformers


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PDF T-14000 T-14001 T-14002 T-14003 T-14004 T-14005 T-14055 T-14056 T-14057 T-14058
1999 - Fibre Channel Transformers

Abstract: ATM Interface Transformers 15400 15600 Fibre Channel fibre T-15600 SMD Transistor g16 g16 smd G16-50ML
Text: ATM Interface Transformers Designed for 155Mbps ATM applications over UTP-5 cable SMD versions available on Tape & Reel Supports 100 Base-X and Twisted Pair FDDI Supports either transmit or receive channels Electrical Specifications at 25o C Turns OCL Part Ratio Min. Number +3% ( µH ) LL max. ( µH ) Rise Time max. (ns) Cw/w max. ( pF ) Isolation Package (VRMS , SCHEMATICS 16-Pin 50 mil Package as shown above. G16 -50ML T-15400 9806 For other values & Custom


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PDF 155Mbps T-15600 16-Pin T-15602 T-15603 T-15601 T-15400 T-15402 T-15403 Fibre Channel Transformers ATM Interface Transformers 15400 15600 Fibre Channel fibre T-15600 SMD Transistor g16 g16 smd G16-50ML
1999 - t13028

Abstract: No abstract text available
Text: 10 BASE-T Transformers 16 Pin 50 mil Package See pg. 40, fig. 7 High Isolation 2000Vrms 16 Pin 100 mil DIP/ SMD Packages (Add G or J to P/N for SMD ) See pg. 40, fig. 4, 5 & 6 D Fast Rise Times Meets ECMA Requirements IEEE 802.3 Compatible (10BASE 2, 10BASE 5, & 10BASE T) G16 -50ML Common Mode Choke Option T-14010 9752 J G Surface Mount Option with 16 Pin 100 mil , Common Mode Choke 16 2 SMD versions available on Tape & Reel 9 10BASET2 - 8/97 15801


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PDF 2000Vrms 10BASE G16-50ML T-14010 T-13010 T-13011 T-13000 T-13012 t13028
SMD Transistor g16

Abstract: smd diode JC 9E T0252 DS4988-2 High-Speed-Powerline ITH08F06 ITH08F06B ITH08F06G smd diode UJ 64 A
Text: @ MITEL ITH08F06 _High Speed Powerline N-Channel IG BT SEMICONDUCTOR . . . , _Advance Information DS4988-2.3 October 1998 The ITH08F06 is a very robust n-channel, enhancement mode insulated gate bipolar transistor (IGBT) designed for low power dissipation in a wide range of high voltage applications , ITH08F06G T0252 SMD (available early 1999) Note: When ordering, use the complete part number. Caution , g16 Wl4 _P « 12 =i 10 o o a) ô o m CO CD CL -1—I—I— PWM Sine Wave Power


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PDF ITH08F06 DS4988-2 ITH08F06 SMD Transistor g16 smd diode JC 9E T0252 High-Speed-Powerline ITH08F06B ITH08F06G smd diode UJ 64 A
2004 - smd marking code G16

Abstract: 2n06l06 ANPS071E IPB80N06S2L-06 IPP80N06S2L-06 PG-TO263-3-2 SP000218163 A6008
Text: V 6.3 m ID · Automotive AEC Q101 qualified 55 R DS(on),max ( SMD version) · , resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA , resistance R DS(on) V GS=4.5 V, I D=69 A - 6.1 8.4 m V GS=4.5 V, I D=69 A, SMD version - 5.8 8.1 V GS=10 V, I D=69 A, - 6.1 6.3 V GS=10 V, I D=69 A, SMD version - , MHz V DD=30 V, V GS=10 V, I D=80 A, R G=1.6 pF ns Gate Charge Characteristics2) V DD


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PDF IPB80N06S2L-06 IPP80N06S2L-06 PG-TO263-3-2 PG-TO220-3-1 SP0002-18163 2N06L06 smd marking code G16 2n06l06 ANPS071E IPB80N06S2L-06 IPP80N06S2L-06 PG-TO263-3-2 SP000218163 A6008
2008 - 084N06L

Abstract: 081N06L
Text: Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G OptiMOS™3 Power-Transistor Product Summary Features VDS 8.1 mΩ ID • Optimized technology for DC/DC converters V RDS(on),max ( SMD ) • Ideal for high frequency switching and sync. rec. 60 50 A â , =10 V, I D=50 A, ( SMD ) - 6.7 8.1 V GS=4.5 V, I D=25 A, ( SMD ) - 9.4 14 - 0.9 , 39 - nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=20 A, R G=1.6 Ω ns


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PDF IPB081N06L3 IPP084N06L3 IPI084N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 084N06L 081N06L
2015 - ADF5355BCPZ

Abstract: No abstract text available
Text: G3 G4 G5 G6 G7 G8 G9 G10 G11 G12 G13 G14 G15 G16 G17 G18 G19 G20 G21 G22 G23 G24 , G10 G11 G12 G13 G14 G15 G16 1 2 3 4 P2 DNI 6V GND ZD1 RPIN18 0Ω DNI , surface-mount device ( SMD ) Connector printed circuit board (PCB), vertical type receptacle SMD LED, 570 nm, SMD (green) GND Connector PCB, single socket (black) L1, L2 SCL, SDA, TP1 to TP6, PDRF , -104-01-04 Connector PCB, Header 3 Film SMD resistor, 0603 0Ω Molex Multicomp 22-28-4033


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PDF EV-ADF5355SD1Z UG-802 ADF5355 ADF5355 UG12936-0-5/15 ADF5355BCPZ
2008 - 139n08n

Abstract: D225 SMD SMD diode D45 136N08N MARKING d45 139N08 PG-TO IPP139N08N3 PG-TO-220-3 JESD22
Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features V DS · Ideal for high frequency switching 80 R DS(on),max ( SMD ) · Optimized , V GS=6 V, I D=22.5 A - 16.0 26 V GS=10 V, I D=45 A, ( SMD ) - 11.5 13.6 V GS=6 V, I D=22.5 A, ( SMD ) - 16.0 26.0 - 2 - 24 48 - S Drain-source , MHz V DD=40 V, V GS=10 V, I D=45 A, R G=1.6 pF ns Gate Charge Characteristics 5) V DD


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PDF IPP139N08N3 IPI139N08N3 IPB136N08N3 PG-TO-220-3 PG-TO-262-3 PG-TO-263-3 139N08N 139n08n D225 SMD SMD diode D45 136N08N MARKING d45 139N08 PG-TO PG-TO-220-3 JESD22
2007 - IPP065N06L

Abstract: d80 DIODE PG-TO220-3 IPP063N06L 065N06L IPB063N06L IPP065N06LG
Text: 60 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version , =53 A - 6.5 8.4 V GS=10 V, I D=80 A, SMD version 5.1 6.2 V GS=4.5 V, I D=53 A, SMD version 6.2 8.1 - 2.2 - 63 126 - Gate resistance RG , 1.3 V - 60 76 ns - 92 115 nC V DD=30 V, V GS=4.5V, I D=80 A, R G=1.6


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PDF IPB065N06L IPP065N06L IPB063N06L PG-TO263-3 PG-TO220-3 063N06L IPP063N06L 065N06L d80 DIODE PG-TO220-3 065N06L IPP065N06LG
2007 - 057N08N

Abstract: 054n08n DSV80 IPB054N08N3-G ipp06cn08n PG-TO220-3 IPP057N08N3 G IPP057N08N3
Text: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS®3 Power-Transistor Product Summary Features V DS 5.4 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max ( SMD ) · N-channel, normal level 80 80 A · Very low on-resistance R DS(on) previous , D=80 A, ( SMD ) - 4.6 5.4 V GS=6 V, I D=40 A, ( SMD ) - 6.0 9.6 - 2.2 - , DD=40 V, V GS=10 V, I D=80 A, R G=1.6 pF ns Gate Charge Characteristics 4) V DD=40 V, I


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PDF IPP057N08N3 IPI057N08N3 IPB054N08N3 IPP06CN08N PG-TO220-3 PG-TO262-3 PG-TO263-3 057N08N 054n08n DSV80 IPB054N08N3-G ipp06cn08n PG-TO220-3 IPP057N08N3 G
2006 - 065N06L

Abstract: IPB063N06L IPP063N06L PG-TO263-3-2 th58 D53A
Text: ) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC SMD , 5.4 6.5 m V GS=4.5 V, I D=53 A - 6.5 8.4 V GS=10 V, I D=80 A, SMD version 5.1 6.2 V GS=4.5 V, I D=53 A, SMD version 6.2 8.1 - 2.2 - 63 126 - S , =1 MHz V DD=30 V, V GS=4.5V, I D=80 A, R G=1.6 pF ns Gate Charge Characteristics4) V


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PDF IPB065N06L IPP065N06L IPB063N06L PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 063N06L IPP063N06L 065N06L PG-TO263-3-2 th58 D53A
2008 - 100n08n

Abstract: IPB097N08N3 IEC61249-2-21 PG-TO220-3
Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 9.7 m ID · Optimized technology for DC/DC converters V R DS(on),max ( SMD ) · Ideal for high frequency switching and sync. rec. 80 70 A · Excellent gate charge x R , V GS=10 V, I D=46 A, ( SMD ) - 8.1 9.7 V GS=6 V, I D=23 A, ( SMD ) - 10.7 17.9 , =70 A, R G=1.6 pF ns Gate Charge Characteristics 5) V DD=40 V, I D=46 A, V GS=0 to 10 V


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PDF IPP100N08N3 IPI100N08N3 IPB097N08N3 IEC61249-2-21 PG-TO220-3 PG-TO262-3 PG-TO263-3 100n08n IEC61249-2-21 PG-TO220-3
2008 - 084N06L

Abstract: IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L
Text: Type IPB081N06L3 G IPP084N06L3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 8.1 m ID · Optimized technology for DC/DC converters V R DS(on),max ( SMD ) · Ideal for high frequency switching and sync. rec. 60 50 A · Excellent gate charge x R , , I D=50 A, ( SMD ) - 6.7 8.1 V GS=4.5 V, I D=25 A, ( SMD ) - 9.4 14 - 0.9 , GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=20 A, R G=1.6 pF ns Gate Charge


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PDF IPB081N06L3 IPP084N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 081N06L 084N06L 084N06L IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L
2008 - 084N06L

Abstract: 081N06L
Text: Product Summary V DS R DS(on),max ( SMD ) ID 60 8.1 50 V m A Package Marking PG-TO263-3 081N06L , (on) V GS=20 V, V DS=0 V V GS=10 V, I D=50 A V GS=4.5 V, I D=25 A V GS=10 V, I D=50 A, ( SMD ) V GS=4.5 V, I D=25 A, ( SMD ) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 60 , t d(off) tf V DD=30 V, V GS=10 V, I D=20 A, R G=1.6 V GS=0 V, V DS=30 V, f =1 MHz - 3700 690


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PDF IPB081N06L3 IPP084N06L3 PG-TO263-3 081N06L PG-TO220-3 084N06L 084N06L 081N06L
2006 - 065N06L

Abstract: IEC61249-2-21 IPB063N06L IPP063N06L PG-TO263-3-2 d80 DIODE
Text: characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W , 8.4 V GS=10 V, I D=80 A, SMD version 5.1 6.2 V GS=4.5 V, I D=53 A, SMD version 6.2 , nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=4.5V, I D=80 A, R G=1.6 pF ns Gate


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PDF IPB065N06L IPP065N06L IEC61249-2-21 IPB063N06L P-TO263-3-2 PG-TO263-3-2 063N06L PG-TO220-3-1 065N06L IEC61249-2-21 IPP063N06L PG-TO263-3-2 d80 DIODE
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