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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

SMD 8A TRANSISTOR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - T250AC-16-4C

Abstract: transistor c323 Payton T250AC 1N5711 SMD D304 diode UCC25600 1003 smd resistor MF630V llc resonant dc-dc converter payton
Text: inductor is required to completely decay to zero during the `off' period of the transistor switch before , this case a simple NPN bipolar transistor is used to ground the SS pin whenever the CONV_OFF control , combination of both through-hole (T/H) and surface mount devices ( SMD ) were used. T/H components are mounted on the top side of the PCB and SMD parts on the underside. The layout detailed in Fig. 22 & Fig. 23 , & 8-A Load Fig. 12 V & I Input AC Waveforms; 220 V AC-Line & 8-A Load Fig. 13 PFC Inductor


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PDF SLUU341B PR883: 24-VDC T250AC-16-4C transistor c323 Payton T250AC 1N5711 SMD D304 diode UCC25600 1003 smd resistor MF630V llc resonant dc-dc converter payton
smd transistor xf

Abstract: Diode SMD ED 8A SMD 8A TRANSISTOR smd transistor 2p data smd diode ED 08 smd transistor 8A transistor smd z a diode ed 8a
Text: CHARACTERISTICS I f (a v ) ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINAY DATASHEET 8A 1200V 50ns 2.0V a- V , . VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR . HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. SMD PACKAGE NC d 2p a k (Plastic) DESCRIPTION TURBOSWITCH , fig. 2) Total power dissipation Pmax = P1 + P3 (P3=10% P1) I f (A V ) = 8A 5 = 0 .5 Tc = 105 , CHARACTERISTICS Symbol VF Parameter Forward voltage drop (see Fig.2) Test Conditions If = 8A Tj = 25°C Tj = 125


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PDF STTA812G smd transistor xf Diode SMD ED 8A SMD 8A TRANSISTOR smd transistor 2p data smd diode ED 08 smd transistor 8A transistor smd z a diode ed 8a
68w Transistor smd

Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL kd smd transistor relay 12v 1c/o SGR642H
Text: Hermetic SMD PCB 85ºC Hermetic PCB 12.5 x 7.5 x 10 16.0 x 11.0 x 11.5 20.2 x 10 x 10.6 , , Alternate Pin Out Transistor Driver Willow Technologies Limited, Shawlands Court, Newchapel Rd , transient suppresion Transistor Driver, Metal Housing, Custom, Diode for coil mercury wetted , 1C/O 1N/O 1C/O 1N/O 1C/O 1N/O 1N/C 1C/O Switching Current 8A 8A 10A Switching , 1.1kVA 300W 150W 4kVA 1.25kVA 1C/O 8A 250VAC 1.2kVA / 240W 2.5kVA / 300W 2kVA 3


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PDF HG4100 HG4516 HG4507 HG4078B SGR46G 125VAC 60VDC 150VDC 24VDC 68w Transistor smd bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL kd smd transistor relay 12v 1c/o SGR642H
Diode SMD ED 7ca

Abstract: alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C
Text: CHARACTERISTICS If(av) 8A Vrrm 600V trr (typ) 25ns Vf (max) 1.5 V FEATURESAND BENEFITS ■SPECIFIC TO , OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR . . HIGH FREQUENCY OPERATIONS. . HIGH , isolated SMD with copper tab DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast , power dissipation (see fig. 2) lF(AV) = 8A S = 0.5 Tc = 118*C 14.5 w Pmax Total power dissipation Pmax , Parameter Test Conditions Min Typ Max Unit Vf - Forward voltage drop If = 8A Tj = 25°C 1.75 V Tj


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PDF STTA806M Diode SMD ED 7ca alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C
1996 - SMD 8A TRANSISTOR

Abstract: Diode SMD ED 8A transistor SMD 8A TRANSISTOR 935 SMD smd transistor 8A fast recovery diode 1200v SMD smd transistor ed STTA812G
Text: PRODUCT CHARACTERISTICS IF(AV) 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V A K , BOTH THE DIODE AND THE COMPANION TRANSISTOR . HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. SMD PACKAGE A NC D2PAK (Plastic) DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in , (see fig. 2) Pmax IF(AV) = 8A = 0.5 Tc = 105°C 19.5 W Total power dissipation Pmax = , IF = 8A VR = 0.8 x VRRM Max Unit Tj = 25°C 2.2 V Tj = 125°C VF Parameter


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PDF STTA812G SMD 8A TRANSISTOR Diode SMD ED 8A transistor SMD 8A TRANSISTOR 935 SMD smd transistor 8A fast recovery diode 1200v SMD smd transistor ed STTA812G
smd transistor 2p data

Abstract: diode 500A 1200v smd transistor JJ
Text: CHARACTERISTICS I f (a v ) ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINAY DATASHEET 8A 1200V 50ns 2.0V a V , . VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR . HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. SMD PACKAGE NC d 2p a k (Plastic) DESCRIPTION TURBOSW ITCH , fig. 2) Total power dissipation Pmax = P1 + P3 (P3=10% P1) I f (AV) = 8A 5 = 0 .5 Tc = 105 , d lF /d t = -500 A/|is If = 8A 12 25 If= 8 A 1.2 / Min Typ Max Unit ns 50 100 A Irm Maximum


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PDF STTA812G smd transistor 2p data diode 500A 1200v smd transistor JJ
ts 4141 TRANSISTOR smd

Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTOR BCX41 PI N CONFIGURATI ON ( NPN) SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 MARKING BCX41=EK Medium Power Transistor , BCX41 CMBD120554, CMBD1205 CMBD1204, CMBD1205 SOT-23 Formed SMD Package L SOT-23 D DIM , 2 J SMD Plastic Package 3 E S O R F G M P G 3º Min Max 7º R — H — 1.30 S 2° ° J 2.10 2.64 T 2° 10° N G


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PDF BCX41 OT-23 BCX41 C-120 240310E ts 4141 TRANSISTOR smd
2007 - smd 8a 046

Abstract: No abstract text available
Text: • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency , 1.7 V IF = 8A See Fig. 1 - 1.7 2.1 V IF = 16A - 1.4 1.7 V IF = 8A , TJ = 125°C - 0.3 5.0 µA VR = VR Rated - 100 500 µA TJ = 125 , 25°C IF = 8A 55 90 TJ = 125°C - 3.5 5.0 VR = 200V diF /dt = 200A/µs 4.5 , 80 If = 16A If = 8A If = 4A 70 Irr (A) trr (ns) 50 40 30 20 10 5 Vr = 200V


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PDF PD-20618 HFA08SD60S 08-Mar-07 smd 8a 046
2007 - Transistor BC 457

Abstract: ULTRAFAST RECTIFIER 16A 600V vf 1.7 P002X bc 457 bc 457 Transistor HFA08SD60S IRFP250 SMD-220 smd 8a 046
Text: Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing , Forward Voltage - 1.4 1.7 V IF = 8A See Fig. 1 - 1.7 2.1 V IF = 16A - 1.4 1.7 V IF = 8A , TJ = 125°C - 0.3 5.0 µA VR = VR Rated - 100 500 , 55 TJ = 25°C IF = 8A 55 90 TJ = 125°C - 3.5 5.0 VR = 200V diF /dt = 200A , www.vishay.com 3 HFA08SD60SPbF 20 80 If = 16A If = 8A If = 4A 70 Irr (A) trr (ns) 50


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PDF PD-96062A HFA08SD60SPbF 12-Mar-07 Transistor BC 457 ULTRAFAST RECTIFIER 16A 600V vf 1.7 P002X bc 457 bc 457 Transistor HFA08SD60S IRFP250 SMD-220 smd 8a 046
2007 - Not Available

Abstract: No abstract text available
Text: • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency , - - V IR = 100µA VF Forward Voltage - 1.4 1.7 V IF = 8A See Fig. 1 - 1.7 2.1 V IF = 16A - 1.4 1.7 V IF = 8A , TJ = 125°C - 0.3 5.0 , (rec)M/dt Rate of Fall of recovery Current 55 TJ = 25°C IF = 8A 55 90 TJ = 125 , If = 8A If = 4A 70 Irr (A) trr (ns) 50 40 30 20 10 5 Vr = 200V Tj = 125Ë


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PDF PD-96062A HFA08SD60SPbF 08-Mar-07
T0252

Abstract: SMD making code 2f ITS08F06 ITS08F06B ITS08F06G ITS08F06H
Text: mode insulated gate bipolar transistor (IGBT) designed for low power dissipation in a wide range of , ) (max) 600V 2.1V 14A 8A 16A 10|IS COLLECTOR (FLANGE) q: - EMITTER - COLLECTOR GATE Outline type , ORDERING INFORMATION ITS08F06B T0220 ITS08F06G T0252 SMD (tape and reel) ITS08F06H T0252 SMD (tubes , saturation voltage VGE = 15V, 'c = 8A - 2.1 2.7 V Vge = 15V, lc = 8A , T = 125°C - 2.4 - V 2 ITS08F06 , lc = 8A , Vge = ±15V, VCE = 50%Vces ^G(ON) ~ ^G(OFF) ~ - 100 - ns »T Rise time - 16 - ns ^ON


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PDF ITS08F06 DS4711 DS4711-3 ITS08F06 T0252 SMD making code 2f ITS08F06B ITS08F06G ITS08F06H
1995 - smd transistor h2a

Abstract: H2A SMD transistor H2A transistor SMD transistor smd H2A SMD Transistor Y8 HSA2-040SAA/A2320A HSA2-040SIA/A2S23 smd transistor Y10 TSHARC A2 hsa2040saa
Text: .7Â HARDWARE ENABLE AND DISABLE. , . AUTO-DETECTION FOR SCREEN TYPE. , . SINGLE MULTIPLEXOR SIGNAL TABLE . NO MULTIPLEXOR DESIGNS. HEADER PIN-OUT


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PDF \PigData\MasterBinders\03 RS-232 000MABJ-UT 000MHZ CD74HC4052PWR 16-TSSOP HSAX-040SIA SN74AHC1G04DCKR SC70-5 74HC4052 smd transistor h2a H2A SMD transistor H2A transistor SMD transistor smd H2A SMD Transistor Y8 HSA2-040SAA/A2320A HSA2-040SIA/A2S23 smd transistor Y10 TSHARC A2 hsa2040saa
2005 - IPM04S0A0S10

Abstract: IPM12S0A0S08
Text: S - Single 0A0 - programmable output Module 12 - 8V ~ 14V R - SIP 08 - 8A S - SMD , ) IPM12S0A0R08 A SIP 8V ~ 14V 0.8V ~ 5V 8A 93% IPM12S0A0S08 A SMD 8V ~ 14V 0.8V ~ 5V 8A 93% IPM04S0A0R10 A SIP 3V ~ 5.5V 0.8V ~ 3.3V 10A 94% IPM04S0A0S10 A SMD , FEATURES High efficiency: 93% @ 12Vin, 5V/ 8A out Small size and low profile: 17.8x15.0x7.8mm , , Non-Isolated, Integrated Point-of-Load Power Modules: 8V~14V input, 0.8~5V and 8A Output Current The Delphi


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PDF 12Vin, QS9000, OHSAS18001 EN60950) 73/23/EEC 93/68/EEC IPM12S x6220 IPM04S0A0S10 IPM12S0A0S08
2006 - Not Available

Abstract: No abstract text available
Text: Output Current S - Single 0A0 - programmable R - SIP 08 - 8A output S - SMD 10 - , ~ 14V 0.8V ~ 5V 8A 93% IPM12S0A0S08FA SMD 8V ~ 14V 0.8V ~ 5V 8A 93 , FEATURES High efficiency: 93% @ 12Vin, 5V/ 8A out Small size and low profile: 17.8x15.0x7.8mm , IPM, Non-Isolated, Integrated Point-of-Load Power Modules: 8V~14V input, 0.8~5V and 8A Output , Electronics, Inc. This product family provides up to 8A of output current or 40W of output power in an


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PDF 12Vin, QS9000, OHSAS18001 EN60950) 73/23/EEC 93/68/EEC IPM12S x6220 IPM12S0A008
2006 - IPM04S0A0S10

Abstract: 509K
Text: - SIP 08 - 8A Space-RoHS 5/6 output S - SMD 10 - 10A F- RoHS 6/6 Integrated POL , SMD 8V ~ 14V 0.8V ~ 5V 8A 93% IPM04S0A0R10 A SIP 3V ~ 5.5V 0.8V ~ 3.3V 10A , FEATURES High efficiency: 93% @ 12Vin, 5V/ 8A out Small size and low profile: 17.8x15.0x7.8mm , , Non-Isolated, Integrated Point-of-Load Power Modules: 8V~14V input, 0.8~5V and 8A Output Current The Delphi , product family provides up to 8A of output current or 40W of output power in an industry standard


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PDF 12Vin, QS9000, OHSAS18001 EN60950) 73/23/EEC 93/68/EEC IPM12S x6220 IPM04S0A0S10 509K
2005 - Not Available

Abstract: No abstract text available
Text: SIP 08 - 8A S - SMD Space 10 - 10A Option Code A - Standard Function B - Remote Sense , (Typical @ IPM12S0A0R08 A SIP 8V ~ 14V 0.8V ~ 5V 8A 93% IPM12S0A0S08 A SMD 8V , input, 0.8~5V and 8A Output Current The Delphi Series IPM12S non-isolated, fully integrated , manufacturing -Delta Electronics, Inc. This product family provides up to 8A of output current or 40W of output , programmable output voltage of 0.8V to 5V. The IPM product family is available in both a SMD or SIP package


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PDF 12Vin, EN60950) IPM12S x6220
2006 - Not Available

Abstract: No abstract text available
Text: - SIP 08 - 8A Space-RoHS 5/6 output S - SMD 10 - 10A F- RoHS 6/6 Integrated POL , 8A 93% IPM12S0A0S08 A SMD 8V ~ 14V 0.8V ~ 5V 8A 93% IPM04S0A0R10 A SIP , FEATURES High efficiency: 93% @ 12Vin, 5V/ 8A out Small size and low profile: 17.8x15.0x7.8mm , IPM, Non-Isolated, Integrated Point-of-Load Power Modules: 8V~14V input, 0.8~5V and 8A Output , Electronics, Inc. This product family provides up to 8A of output current or 40W of output power in an


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PDF 12Vin, QS9000, OHSAS18001 EN60950) 73/23/EEC 93/68/EEC IPM12S x6220
2005 - Not Available

Abstract: No abstract text available
Text: SIP 08 - 8A S - SMD Space 10 - 10A Option Code A - Standard Function B - Remote Sense , (Typical @ IPM12S0A0R08 A SIP 8V ~ 14V 0.8V ~ 5V 8A 93% IPM12S0A0S08 A SMD 8V , Point-of-Load Power Modules: 8V~14V input, 0.8~5V and 8A Output Current The Delphi Series IPM12S non-isolated , 8A of output current or 40W of output power in an industry standard, compact, IC-like, molded , family is available in both a SMD or SIP package. IPM family is also available for input 3V~5.5V


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PDF 12Vin, EN60950) IPM12S x6220
2007 - IPM12S0A0R08FA

Abstract: No abstract text available
Text: - programmable R - SIP 08 - 8A output S - SMD 10 - 10A Integrated POL 04 - 3V , % IPM12S0A0S08FA SMD 8V ~ 14V 0.8V ~ 5V 8A 93% IPM04S0A0R10FA SIP 3V ~ 5.5V 0.8V ~ 3.3V , FEATURES High efficiency: 93% @ 12Vin, 5V/ 8A out Small size and low profile: 17.8x15.0x7.8mm , , Non-Isolated, Integrated Point-of-Load Power Modules: 8V~14V input, 0.8~5V and 8A Output Current The Delphi , product family provides up to 8A of output current or 40W of output power in an industry standard


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PDF 12Vin, QS9000, OHSAS18001 EN60950) 73/23/EEC 93/68/EEC IPM12S x6220 IPM12S0A008 IPM12S0A0R08FA
IPM12S0A0R08FA

Abstract: s08f
Text: SIP 8V ~ 14V 0.8V ~ 5V 8A 93% IPM12S0A0S08FA SMD 8V ~ 14V 0.8V ~ 5V 8A , FEATURES High efficiency: 93% @ 12Vin, 5V/ 8A out Small size and low profile: 17.8x15.0x7.8mm , , Non-Isolated, Integrated Point-of-Load Power Modules: 8V~14V input, 0.8~5V and 8A Output Current The Delphi , product family provides up to 8A of output current or 40W of output power in an industry standard , . The IPM product family is available in both a SMD or SIP package. IPM family is also available for


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PDF 12Vin, QS9000, OHSAS18001 EN60950) 73/23/EEC 93/68/EEC IPM12S x6220 IPM12S0A008 IPM12S0A0R08FA s08f
2005 - Not Available

Abstract: No abstract text available
Text: SIP 08 - 8A S - SMD Space 10 - 10A Option Code A - Standard Function B - Remote Sense , (Typical @ IPM12S0A0R08 A SIP 8V ~ 14V 0.8V ~ 5V 8A 93% IPM12S0A0S08 A SMD 8V , , Non-Isolated, Integrated Point-of-Load Power Modules: 8V~14V input, 0.8~5V and 8A Output Current The Delphi , product family provides up to 8A of output current or 40W of output power in an industry standard , . The IPM product family is available in both a SMD or SIP package. IPM family is also available for


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PDF 12Vin, EN60950) 73/23/EEC 93/68/EEC IPM12S x6220
2007 - bc 457

Abstract: Transistor BC 457 IRFP250 SMD-220 smd 8a 046
Text: RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation , Forward Voltage - 1.5 1.8 V IF = 4A See Fig. 1 - 1.8 2.2 V IF = 8A - , Number: 94034 www.vishay.com 3 HFA04SD60SPbF 50 14 If = 8A If = 4A 12 If = 8A If = , °C Tj = 25°C 180 If = 8A If = 4A 160 140 If = 8A If = 4A 120 di (rec)M / dt (A/ µs , . 26 .40 (1.0 39) 24 .40 (0.9 61) SMD -220 Tape & Reel When ordering, indicate the part 360


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PDF PD-96059A HFA04SD60SPbF 12-Mar-07 bc 457 Transistor BC 457 IRFP250 SMD-220 smd 8a 046
2007 - Not Available

Abstract: No abstract text available
Text: Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher , See Fig. 1 - 1.8 2.2 V IF = 8A - 1.4 1.7 V IF = 4A, T J = 125°C - , Number: 94034 www.vishay.com 3 HFA04SD60SPbF 50 14 If = 8A If = 4A 12 If = 8A If = 4A , Tj = 125˚C Tj = 25˚C 180 If = 8A If = 4A 160 140 If = 8A If = 4A 120 di (rec , . 26 .40 (1.0 39) 24 .40 (0.9 61) SMD -220 Tape & Reel When ordering, indicate the part 360


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PDF PD-96059A HFA04SD60SPbF 08-Mar-07
2007 - Not Available

Abstract: No abstract text available
Text: • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency , 1.8 V IF = 4A See Fig. 1 - 1.8 2.2 V IF = 8A - 1.4 1.7 V IF = , HFA04SD60S Bulletin PD-20617 rev. D 10/06 50 14 If = 8A If = 4A 12 If = 8A If = 4A 10 Irr , šC Tj = 25˚C 180 If = 8A If = 4A 160 140 If = 8A If = 4A 120 di (rec)M / dt (A , ) FEED DIRECTION 13.50 (0.532) 12.80 (0.504) DIA. 26 .40 (1.0 39) 24 .40 (0.9 61) SMD -220 Tape


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PDF PD-20617 HFA04SD60S 08-Mar-07
2013 - smd transistor 12W 13

Abstract: transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55
Text: . Innovative PowerTM DESCRIPTION Switch Drive. Switch node for the external NPN transistor . Connect this , . Ground. Base Drive. Base driver for the external NPN transistor . Power Supply. This pin provides bias , transients and compensated with the internal compensation network, modulates the external NPN transistor , driver output that drives the emitter of an external high voltage NPN transistor . This baseemitter-drive , rectified high voltage DC rail supplies current to the base of the NPN transistor . This results in an


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PDF ACT365 10-Jan-13 ACT365 150mW smd transistor 12W 13 transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55
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