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    SKB02N120 Price and Stock

    Infineon Technologies AG SKB02N120ATMA1

    IGBT 1200V 6.2A 62W TO263-3-2
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    DigiKey SKB02N120ATMA1 Reel
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    Infineon Technologies AG SKB02N120

    FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON DIODE Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
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    ComSIT USA SKB02N120 720
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    SKB02N120 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SKB02N120 Infineon Technologies 2A 1200V TO263AB SMD IGBT+Diode Original PDF
    SKB02N120 Infineon Technologies Fast IGBT in NPT-Technology with Soft, Fast Recovery Anti-Parallel EmCon Diode Original PDF
    SKB02N120ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 6.2A 62W TO263-3-2 Original PDF