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SIT9005ACB1G-30NC datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
SIT9005ACB1G-30NC SIT9005ACB1G-30NC ECAD Model SiTIME Crystals, Oscillators, Resonators - Programmable Oscillators - MEMS OSC PROG SSXO LVCMOS DS 3V Original PDF

SIT9005ACB1G-30NC Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - Not Available

Abstract: No abstract text available
Text: ) 75W 75W 75W 75W 75W RDSS () 1.5 1.5 1.5 1.5 1.5 CISS (pF) 610pF 610pF 610pF 610pF 610pF QG (nC) 30nC 30nC 30nC 30nC 30nC Searched through 910 records and found 5 products matching your criteria. Top


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PDF IRFY430M IRFY430M IRFY430 IRFY430" IRFY430 IRFY430C IRFY430C-JQR-B IRFY430-JQR-B IRFY430M-T257
2010 - LM3409HV

Abstract: LM3409 iadj AEC-Q100 ON QG FET 6 PIN CINM dap 08 ic
Text: ) vIN-MAX tON CIN CIN VIN 2 10 vIN-MAX CIN-MIN Qg 30nC ( 300kHz Qg ) RDS-ON PFET Qg 30nC PFET Qg 30nC PFET (CF) VIN RSNS PFET CF VCC CSN VCST ILED


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PDF LM3409/09HV eMSOP-10 LM3409/09Q/09HV/09QHV LM3409Q/LM3409QHV AEC-Q100 LM3409/LM3409Q) LM3409HV/LM3409QHV) DS300856-08-JP LM3409HV LM3409 iadj AEC-Q100 ON QG FET 6 PIN CINM dap 08 ic
2006 - ISL6440

Abstract: ISL6440IA ISL6440IAZ TB379 3 phase pwm ic 75150 PC PWM112
Text: - 30nC FET MOSFET 30nC × 300kHz=9mA FET 36mA PGOOD- 3mA +5V PWM 10% 20mA


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PDF ISL6440 300kHz180 FN9040 6V24V 300kHz ISL6440IA ISL6440IAZ ISL6440 ISL6440IA ISL6440IAZ TB379 3 phase pwm ic 75150 PC PWM112
2005 - L6388D

Abstract: L6388
Text: . It has to be: CBOOT>>>CEXT e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = , charging time of the bootstrap capacitor. For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: 30nC - 125 0.8V V drop


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PDF L6388 L6388 L6388D L6388D013TR
1999 - Not Available

Abstract: No abstract text available
Text: It has to be: CBOOT>>>CEXT e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF , the bootstrap capacitor. For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Vdrop = 30nC 5µs 125 ~ 0.8V


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PDF L6384 L6384 L6384D
2005 - L6388

Abstract: L6388D STL6388 L6388D013TR
Text: loss . It has to be: bs O CBOOT>>>CEXT e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF , charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: 30nC V drop


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PDF L6388 L6388D L6388 L6388D STL6388 L6388D013TR
2000 - Not Available

Abstract: No abstract text available
Text: 350pF QG (nC) 30nC 30nC Searched through 910 records and found 2 products matching your criteria


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PDF IRFF420 300ms, IRFF420" IRFF420 IRFF420-JQR-B 350pF
2000 - st l6384 applications

Abstract: HIGH-VOLTAGE HALF BRIDGE DRIVER l6384 Model 146K L6384D
Text: .: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be 300mV. If HVG , of the bootstrap capacitor. For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Vdrop = 30nC 125 ~ 0.8V


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PDF L6384 L6384 L6384D st l6384 applications HIGH-VOLTAGE HALF BRIDGE DRIVER Model 146K L6384D
2001 - l6387 recovery diode

Abstract: L6387 L6387D
Text: 0 CBOOT>>>CEXT e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the , with a total gate charge of 30nC the drop on the bootstrap 30nC 125 ~ 0.8V 5µs Vdrop has to


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PDF L6387 L6387 L6387D l6387 recovery diode L6387D
2000 - L6387

Abstract: L6387D 125Ohm
Text: is proportional to the cyclical voltage loss . It has to be: CBOOT>>>CEXT e.g.: if Qgate is 30nC , bootstrap capacitor. For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap 30nC 125 ~ 0.8V 5µs Vdrop has to be taken into account when the voltage drop on CBOOT is


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PDF L6387 L6387 L6387D L6387D 125Ohm
2000 - l6384

Abstract: L6384D l6384 igbt
Text: proportional to the cyclical voltage loss . It has to be: CBOOT>>>CEXT e.g.: if Qgate is 30nC and Vgate is , MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Vdrop = 30nC 125 ~ 0.8V 5µs Vdrop has to be taken into account when the


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PDF L6384 L6384 L6384D L6384D l6384 igbt
2001 - l6387 recovery diode

Abstract: L6387 L6387D
Text: 2 e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be , charge of 30nC the drop on the bootstrap 30nC 125 ~ 0.8V 5µs Vdrop has to be taken into account


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PDF L6387 L6387 L6387D l6387 recovery diode L6387D
2001 - ciss 200v

Abstract: IRFE310
Text: 610pF QG (nC) 30nC 30nC Searched through 910 records and found 2 products matching your criteria


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PDF IRF9140" IRF9140 IRF9140-JQR-B IRF9140SMD IRF9140SMD-JQR-B O276AB) 1400pF ciss 200v IRFE310
2003 - L6385

Abstract: L6385D D99IN1056 VCBO cmos 0.51
Text: : CBOOT>>>CEXT e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would , . For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Vdrop = 30nC 125 ~ 0.8V 5µs Vdrop has to be taken


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PDF L6385 L6385 L6385D L6385D D99IN1056 VCBO cmos 0.51
1999 - L6385

Abstract: L6385D Diagram igbt flash
Text: : CBOOT>>>CEXT e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would , bootstrap capacitor. For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Vdrop = 30nC 125 ~ 0.8V 5µs Vdrop has


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PDF L6385 L6385 L6385D L6385D Diagram igbt flash
2003 - Not Available

Abstract: No abstract text available
Text: value the external MOS can be seen as an equivalent capacitor. 4/9 e.g.: if Qgate is 30nC and Vgate , with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Vdrop = 30nC 125 ~ 0.8V 5µs Ton (ns) Typ. Toff (ns) ) s ( t c u d o ) r s ( P t c e


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PDF L6385 L6385D L6385
2003 - L6385

Abstract: L6385D
Text: : CBOOT>>>CEXT e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would , bootstrap capacitor. For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Vdrop = 30nC 125 ~ 0.8V 5µs Vdrop has


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PDF L6385 L6385 L6385D L6385D
1999 - L6386 application

Abstract: L6386 L6386D
Text: 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be 300mV. If HVG has to be , : using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Vdrop = 30nC 125 ~ 0.8V 5µs Vdrop has to be taken into account when the


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PDF L6386 L6386 DIP14 L6386D L6386 application L6386D
1998 - irf510 switch

Abstract: MOSFET IRF740 as switch irf840 mosfet drive circuit diagram irf520 switch power MOSFET IRF740 driver circuit IRF540 gate drive for mosfet irfz44 IRF510 application note IRFZ44 IRFZ44 mosfet
Text: 1998 Application Note 24 Micrel If the gate charge is 30nC for VGS = 10V, then the device , application. Load +30V VGS = 0 at t = 0 VGS = 10V at t = 30ns 1A D QG = 30nC G S QG = I t 30nC = 1A 30ns = t Figure 5a. Gate-to-Source Fall Time t Figure 4. Simplified Gate


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1999 - USING INTERNAL BOOTSTRAP CHARGE CAPABILITY L6384

Abstract: L6384 DSA006589 L6384D
Text: to be: CBOOT>>>CEXT e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop , bootstrap capacitor. For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Vdrop = 30nC 125 ~ 0.8V 5µs Vdrop has to be


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PDF L6384 L6384 L6384D USING INTERNAL BOOTSTRAP CHARGE CAPABILITY L6384 DSA006589
2010 - MAX6581

Abstract: uP1514 MAX6581TG9A TOC03
Text: ). 3.0NC /W ESD Protection (all pins, Human Body Model).Q2kV Operating Temperature , 3.0 VCC NC TA = + 30NC to +85NC, TRJ = +60NC to +100NC TA, TRJ = -40NC to +125NC -1.2 +1.2 -2.5 +2.5 TA = + 30NC to +85NC -1 +1 TA = -40NC to +125NC -2 +2 TA = 0NC to +150NC -3 +3 TA = + 30NC to +85NC, TRJ = +60NC to +100NC VCC = 3.3V +0.85 TA = + 30NC to +85NC, TRJ = 100NC to +150NC VCC = 3.3V -0.85 -1 +1 TA, TRJ = -40NC to +125NC


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PDF MAX6581 MAX6581 uP1514 MAX6581TG9A TOC03
2001 - L6387D

Abstract: L6387
Text: total gate charge : 4/9 0 CBOOT>>>CEXT e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF , : using a power MOS with a total gate charge of 30nC the drop on the bootstrap 30nC 125 ~ 0.8V 5µs


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PDF L6387 L6387 L6387D L6387D
1999 - L6385 datasheet

Abstract: L6385 L6385D
Text: 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be 300mV. If HVG has to be , MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Vdrop = 30nC 125 ~ 0.8V 5µs Vdrop has to be taken into account when the


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PDF L6385 L6385 L6385D L6385 datasheet L6385D
2003 - D99IN1056

Abstract: L6385 D97IN514B hv 102 st
Text: >>>CEXT e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be 300mV , : using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Vdrop = 30nC 125 ~ 0.8V 5µs Vdrop has to be taken into account when the


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PDF L6385 L6385 L6385D E-L6385D D99IN1056 D97IN514B hv 102 st
irf840 mosfet drive circuit diagram

Abstract: 7170 MOSFET MIC44XX IRFZ44 mosfet switching circuit power MOSFET IRF740 driver circuit IRF510 application note irf510 switch MOSFET IRF740 as switch power MOSFET IRF610 Irf510 mosfet circuit diagram
Text: charge. Application Note 24 7-170 March 1998 Application Note 24 If the gate charge is 30nC , correctly for the application. +30V i VG S = 0 at I = 0 VG S = 10V at t = 30ns ·o < 0 "_Tc r Q q = 30nC QG = 1x t 30nC = 1A 30ns = I T e k R u n : 2 .0 0 G S/S T e n R un: 2 .0 0 G S /S MiereI 1 -i-


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PDF MIC4416 OT-143 IRF7413 MIC4416/17 irf840 mosfet drive circuit diagram 7170 MOSFET MIC44XX IRFZ44 mosfet switching circuit power MOSFET IRF740 driver circuit IRF510 application note irf510 switch MOSFET IRF740 as switch power MOSFET IRF610 Irf510 mosfet circuit diagram
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