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SIT1602BCR1-25E datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
SIT1602BCR1-25E SIT1602BCR1-25E ECAD Model SiTIME Crystals, Oscillators, Resonators - Programmable Oscillators - MEMS OSC PROG XO LVCMOS 2.5V Original PDF

SIT1602BCR1-25E Datasheets Context Search

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2013 - Not Available

Abstract: No abstract text available
Text: Electrical characteristics Table3. V+/V- = ±15V, Tamb = + 25Ë šC (unless otherwise specified) Symbol , 200 - 200 800 - - 1000 83.5 94 - Input offset voltage VIO Tamb=+ 25Ë šC 0°C < Tamb < 70°C Input offset current IIO Tamb=+ 25Ë šC 0°C < Tamb < 70°C nA Input bias current IB Tamb=+ 25Ë šC 0°C < Tamb < 70°C nA Open Loop Gain 1 Av1 + - Tamb=+ 25Ë , Av2 + - Tamb=+ 25Ë šC , V /V = ±15V, RL≥2kΩ, Vo= ±10V 0°C < Tamb < 70°C 88 83.5


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PDF NJM5532C 10MHz 100dB 00V/mV NJM5532C
SR25B-10R

Abstract: SR25A-1R SR25A-10S SR20N-8S SR20N-8R SR20N-4S SR20N-4R SR20N-2S SR30A-2S SR25B-2S
Text: 600 1. 2 80 25e 3mA 300 150] 158 SR25B-8R Hi 500 400 320 25 120c 600 1. 2 80 25e 3nA 400 150] SR25B-8SiiiffitÌ 158 SR25B-8S Hi 500 400 320 25 120c 600 1. 2 80 25e 3mA 400 150 j 158 SR30A-12R Hi 720 600 480 35 lOlc 600 1. 42 110 25e 1 OmA 600 150j SR30A-12Sà iSffi 25e lOlA 600 150 j 616 SR30A-16R Hi 960 800 640 35 lOlc 600 1. 42 110 25c 10nA 800 150] SR30A-16SiiS®É 616 SR30A-16S Hi 960 800 640 35 lOlc 600 1. 42 110 25e


OCR Scan
PDF SR20N-2S SR20N-4R SR20N-4SÃ SR20N-4S SK20N-6R SR20N-6SiiSft14 SE20N-6 SR20N-8R SR30A-24SiiiStt SR30A-24S SR25B-10R SR25A-1R SR25A-10S SR20N-8S SR30A-2S SR25B-2S
SR25B-4S

Abstract: LOLA SR25A-1S SR25A-1R SR25A-10S SR20N-8S SR20N-8R SR20N-4S SR20N-4R sr25b-10r
Text: 600 1. 2 80 25e 3mA 300 150] 158 SR25B-8R Hi 500 400 320 25 120c 600 1. 2 80 25e 3nA 400 150] SR25B-8SiiiffitÌ 158 SR25B-8S Hi 500 400 320 25 120c 600 1. 2 80 25e 3mA 400 150 j 158 SR30A-12R Hi 720 600 480 35 lOlc 600 1. 42 110 25e 1 OmA 600 150j SR30A-12Sà iSffi 25e lOlA 600 150 j 616 SR30A-16R Hi 960 800 640 35 lOlc 600 1. 42 110 25c 10nA 800 150] SR30A-16SiiS®É 616 SR30A-16S Hi 960 800 640 35 lOlc 600 1. 42 110 25e


OCR Scan
PDF SR20N-2S SR20N-4R SR20N-4SÃ SR20N-4S SK20N-6R SR20N-6SiiSft14 SE20N-6 SR20N-8R SR30A-24SiiiStt SR30A-24S SR25B-4S LOLA SR25A-1S SR25A-1R SR25A-10S SR20N-8S sr25b-10r
2001 - sandvik LJ055104A

Abstract: No abstract text available
Text: below. LC, LF, LK, LP, LV, LX Series: - 25Ë šC to +70˚C LJ & LT Series: -40˚C to +85˚C -40˚C to +85˚ C No breaks Shall cover more than 75% of lead surface Step 1 (+ 25Ë šC) * Step 2 (- 25Ë šC) ≥50%* Step 3 (+ 25Ë šC) +20%* Step 4 (+70˚C) ≤+150%* Step 5 (+ 25Ë šC) +20%* Step 1 (+ 25Ë šC) * Step 2 (-40˚C) ≥50%* Step 3 (+ 25Ë šC) +20* Step 4 (+85˚C) ≤+150%* Step 5 (+ 25Ë , 5 ± 0.5 seconds LC, LF, LK, LP, LV, LX Series: Capacitors cycled from + 25Ë šC(1) → − 25Ë šC(2


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PDF LJ055104A LJ055224A LJ055474A LJ055105A LJ055225A LJ055335A LJ055565A sandvik LJ055104A
Not Available

Abstract: No abstract text available
Text: 1.3±0.2 0.8±0.1 0.5 +0.2 -0.1 2.54±0.25 5.08±0.5 s Absolute Maximum Ratings (Tc = 25Ë , ±40 TC = 25Ë šC A A 45 PD Ta= 25Ë šC 3 1 : Gate 2 : Drain 3 : Source TO , Characteristics (Tc = 25Ë šC) Parameter Symbol Drain-Source cut-off current IDSS Condition Min , F-MOS FETs ID –VDS |Yfs | – ID 32 32 0.16 VDS=10V TC= 25Ë šC TC= 25Ë šC 20 4V , PD=45W (1)VGS=10V (2)VGS=4V TC= 25Ë šC 0.14 Drain-Source ON-resistance 28 Forward


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PDF 2SK1033 180ns
Not Available

Abstract: No abstract text available
Text: Ratings (Tc = 25Ë šC) Parameter Symbol Rating VDSS 60 V Gate-Source voltage V , 4V drive IDP ±10 TC = 25Ë šC A A 30 PD Ta = 25Ë šC 3 1 : Gate 2 : Drain 3 , Characteristics (Tc = 25Ë šC) Parameter Symbol Drain-Source cut-off current IDSS Condition Min , –VDS |Yfs | – ID 8 8 0.8 VDS=10V TC= 25Ë šC TC= 25Ë šC 7 4 3.5V 3V 3 PD , 20 6 5 4 3 2 1 0 24 (1)VGS=10V (2)VGS=4V TC= 25Ë šC 0.7 0.6 0.5 0.4 0.3 (2


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PDF 2SK1255
Not Available

Abstract: No abstract text available
Text: Absolute Maximum Ratings (Tc = 25Ë šC) Parameter 1 Symbol Rating VDSS 60 V Gate-Source , current VGSS at 4V drive IDP ±200 TC = 25Ë šC A 150 PD Ta = 25Ë šC A W 3.5 , Electrical Characteristics (Tc = 25Ë šC) Parameter Symbol Drain-Source cut-off current IDSS , RDS(on) (Ω) VDS=10V TC= 25Ë šC TC= 25Ë šC 4.5V 100 Drain current ID (A) RDS (on) – ID 50 40 30 20 10 0 0 5 10 15 20 25 (1)VGS=4V (2)VGS=10V TC= 25Ë


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PDF 2SK1259 700ns
Not Available

Abstract: No abstract text available
Text: 3 : Source TOP-3 Full Pack Package (a) s Absolute Maximum Ratings (Tc = 25Ë šC) Drain-Source , ±20 A Pulse IDP ±40 A TC = 25Ë šC Ta = 25Ë šC 100 PD W 3 Channel temperature , Characteristics (Tc = 25Ë šC) Parameter Symbol Condition Min Typ Max Unit Drain-Source , F-MOS FETs ID –VDS |Yfs | – ID 32 16 1.6 VDS=25V TC= 25Ë šC TC= 25Ë šC (S) | Yfs , =10V (2)VGS=15V TC= 25Ë šC 1.4 1.2 1.0 0.8 0.6 (1) 0.4 (2) 0.2 0 48 0 8 16


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PDF 2SK1406 140ns
Not Available

Abstract: No abstract text available
Text: +0.2 0.5 -0.1 2.54±0.25 s Absolute Maximum Ratings (Tc = 25Ë šC) Parameter 5.08±0.5 1 , Pulse IDP ±10 1 : Gate 2 : Drain 3 : Source TO-220 Full Pack Package (a) A TC = 25Ë šC Ta = 25Ë šC 40 PD W 2 Channel temperature Tch 150 ˚C Storage temperature Tstg –55 to +150 ˚C s Electrical Characteristics (Tc = 25Ë šC) Parameter Symbol , F-MOS FETs ID –VDS |Yfs | – ID 8 RDS (on) – ID 8 1.6 VDS=10V TC= 25Ë šC TC= 25Ë


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PDF 2SK758
2002 - Not Available

Abstract: No abstract text available
Text: Forward Voltage VF (V) Ta= 25Ë šC IF=20mA 0.8 0.6 0.4 0.2 0 400 450 500 550 Wave , 0 600 105 ■Ambient Temperature vs. Relative Intensity Ta= 25Ë šC 3.0 Relative , Ta= 25Ë šC 0.01 1.0 2.0 2.5 3.0 3.5 4.0 4.5 Relative Intensity 1.5 Ambient Temperature Ta(°C) ■Forward Voltage vs. Forward Current 100 2 Hz 20 2.5 z 50H Hz 50% Ta= 25Ë , Pulse Duration ■Ambient Temperature vs. Relative Intensity Ta= 25Ë šC 3.0 10.0 IF


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PDF 1104B
Not Available

Abstract: No abstract text available
Text: 1.3±0.2 0.8±0.1 0.5 +0.2 -0.1 2.54±0.25 5.08±0.5 s Absolute Maximum Ratings (Tc = 25Ë , ±40 TC = 25Ë šC A A 45 PD Ta = 25Ë šC 3 1 : Gate 2 : Drain 3 : Source TO , Characteristics (Tc = 25Ë šC) Parameter Symbol Drain-Source cut-off current IDSS Condition Min , F-MOS FETs ID –VDS |Yfs | – ID 32 0.16 32 VDS=10V TC= 25Ë šC TC= 25Ë šC 16 3.5V , 0.02 0 0 24 (1)VGS=10V (2)VGS=4V TC= 25Ë šC 0.14 0 8 16 24 32 40 0


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PDF 2SK1214 110ns
Not Available

Abstract: No abstract text available
Text: : Source TO-220E Package s Absolute Maximum Ratings (Tc = 25Ë šC) Symbol Rating Drain-Source , dissipation Unit TC= 25Ë šC Ta= 25Ë šC EAS * ±6 A 22.5 mJ 40 PD W 2 , = 5mH, IL= 3A, 1 pulse s Electrical Characteristics (Tc = 25Ë šC) Parameter Symbol Condition , Power F-MOS FETs Area of safe operation (ASO) 50 Non repetitive pulse TC= 25Ë šC IDP 10 (1 , TC= 25Ë šC 5 40 3 30 Abalanche current IAS (A) 10 PD – Ta (1) 20 22.5mJ


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PDF 2SK2325 O-220E
smd transistor A5

Abstract: smd transistor marking A5 SMD MARKING A16
Text: ˆ’1.6 −50µA IB=0 −2.0 25Ë šC 100 −40˚C 200 100 50 50 −0.2 −0.5 â , ) TRANSITION FREQUENCY : fT (MHz) Ta=100˚C 25Ë šC −40˚C −0.05 −0.5 −1 −2 −5 â , ˆ’0.2 −0.2 −5 −50 −100 Ta= 25Ë šC VCE=−12V 500 200 100 50 0.5 1 2 , current sales@twtysemi.com −3 −4 −1 −5 Ta= 25Ë šC −0.5 −0.2 IC/IB , ˆ’1V Ta= 25Ë šC −1.2 Fig.2 Grounded emitter output characteristics ( 1 ) DC CURRENT GAIN : hFE


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PDF 32MHZ smd transistor A5 smd transistor marking A5 SMD MARKING A16
Not Available

Abstract: No abstract text available
Text: 0.75±0.1 drive drive 1 2 3 Marking s Absolute Maximum Ratings (Tc = 25Ë šC) Symbol , Drain current ID DC IDP Pulse Allowable power dissipation ±3 TC = 25Ë šC PD Ta= 25Ë , temperature Tstg –55 to +150 ˚C s Electrical Characteristics (Tc = 25Ë šC) Parameter Symbol , = 0 2SK2016 Power F-MOS FETs PD – Ta ID – VDS 16 TC= 25Ë šC VDS=10V TC= 25Ë , =10V TC= 25Ë šC 5 4 3 2 1 0 2 3 4 5 6 ton, tf, td(off) – ID VDD=30V VGS


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PDF 2SK2016 SC-63
Not Available

Abstract: No abstract text available
Text: TO-220E Package s Absolute Maximum Ratings (Tc = 25Ë šC) Symbol Rating Unit Drain-Source , dissipation VGSS ±20 V DC ID ±3 A Pulse IDP ±6 A TC= 25Ë šC Ta= 25Ë , €“55 to +150 ˚C s Electrical Characteristics (Tc = 25Ë šC) Parameter Symbol Condition Min , 1 0.5 t=10ms 0.3 t=100ms 0.2 0.1 VDS=10V TC= 25Ë šC (1) TC=Ta (2) Without heat , repetitive pulse TC= 25Ë šC IDP ID – VGS 5 Drain current ID (A) 10 PD – Ta 20 16 12


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PDF 2SK2588 O-220E
Not Available

Abstract: No abstract text available
Text: equipment q Switching 0.5±0.1 mode regulator s Absolute Maximum Ratings (Tc = 25Ë šC) Symbol , power dissipation TC = 25Ë šC Ta= 25Ë šC 15 PD W 2 Channel temperature Tch 150 ˚C Storage temperature Tstg –55 to +150 ˚C s Electrical Characteristics (Tc = 25Ë , dissipation PD (W) 50 30 30 Non repetitive pulse TC= 25Ë šC ID – VGS (1) TC=Ta (2) Without heat sink (PD=2.0W) VGS=10V TC= 25Ë šC 25 25 4.0V Drain current ID (A) 100 PD â


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PDF 2SK2659
2001 - Not Available

Abstract: No abstract text available
Text: ) (Ta= 25Ë šC) ø4.8 Protruded resin 1.5MAX ø4.0 -30˚ -20˚ 0˚ 100 +10˚ -10˚ , GaAsP on GaP GaAsP on GaP GaP GaP (Ta= 25Ë šC) Power dissipation Forward current Peak forward , MAX 2.3 2.8 2.8 2.8 2.8 2.8 (Ta= 25Ë šC) Peak emission wavelength IF λp(nm) (mA) TYP 695 , . Ambient Temperature(Note) (Ta= 25Ë šC) 100 (1F=20mA) 1000 50 500 40 30 20 , Curve 20 40 60 80 100 Duty Ratio vs. Peak Forward Current (Ta= 25Ë šC) 1000 120


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PDF
Not Available

Abstract: No abstract text available
Text: +0.05 (Ta= 25Ë šC) 0.70–0.03 +0.03 s Absolute Maximum Ratings 0.12–0.01 0.85–0.03 , :Collector EIAJ:SC–81 SS–Mini Flat Type Package (J type) Marking symbol : Y (Ta= 25Ë šC) Symbol , 2SD2216J Transistor PC — Ta IC — VCE IB — VBE 90 1200 Ta= 25Ë šC 120 80 40 , 80 100 120 140 160 400 0 0 2 4 6 8 10 12 IC — VBE 120 VCE=10V Ta= 25Ë šC 25Ë šC 100 Collector current IC (mA) 100 – 25Ë šC 80 60 40 20 80 60 40


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PDF 2SD2216J 2SB1462J
Not Available

Abstract: No abstract text available
Text: : Drain 3 : Source TO-220E Package s Absolute Maximum Ratings (Tc = 25Ë šC) Symbol Rating , energy capability Allowable power dissipation Unit TC = 25Ë šC Ta= 25Ë šC 50 PD W 2 , = 8mH, IL= 5A, VDD= 50V, 1 pulse s Electrical Characteristics (Tc = 25Ë šC) Parameter Symbol , repetitive pulse TC= 25Ë šC 50 VDD=50V ID=5A Avalanche energy capability EAS (mJ) 100 EAS – Tj , šC 25Ë šC 100˚C 4 2 5V 2 4 3 2 1 50W 1 VDS=25V ID=1mA VDS=25V TC= 25Ë


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PDF 2SK2123 100mJ O-220E
Not Available

Abstract: No abstract text available
Text: , 0.05C-cut off, 25Ë šC Discharge: CC 0.2C, 3.0V cut off, 25Ë šC 4.4 放電レート特性 0.2C , 400.0 Charge: CC/CV 4.2V, 0.5C, 0.05C-cut off, 25Ë šC Discharge: CC:0.2C 3.0V-cut off 4.4 25Ë , Capacity /mAh 300.0 400.0 Charge: CC/CV 4.2V, 0.5C, 0.05C-cut off, 25Ë šC Discharge: CC:0.2C 3.0V-cut off, 25Ë šC 4.4 1cyc 10cyc 100cyc 300cyc 500cyc 4.2 4.0 Voltage /V 3.0 Voltage /V Charge: CC/CV 4.2V, 0.5C, 0.05C-cut off, 25Ë šC Discharge: 3.0V-cut off, 25Ë šC 4.4 3.8


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PDF 140mA 280mA 05C-cut 10cyc 100cyc 300cyc 500cyc 3-1505/MS
Not Available

Abstract: No abstract text available
Text: ˆ’10 VCE=−6V −35.0 Ta= 25Ë šC −100 −31.5 −28.0 −8 −24.5 −21.0 −6 â , ˆ’20 Ta=100˚C 25Ë šC −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 −80 Ta= 25Ë šC −500 −450 −400 −350 −300 −250 −60 −200 −150 â , / UMY1N / FMY1A 500 VCE=−5V −3V −1V Ta=100˚C 25Ë šC 200 100 −40˚C 200 , ˆ’100 −0.2 COLLECTOR CURRENT : IC (mA) −0.2 Ta=100˚C 25Ë šC −40˚C −0.05 −0.5 â


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PDF 2SA1037AK 2SC2412K
2004 - Not Available

Abstract: No abstract text available
Text: 10 2 1 25Ë šC −55˚C 5 0.5 0.2 0.1 0 100 VCE=6V Ta=100˚C COLLECTOR , Ta= 25Ë šC 80 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0 0.05mA IB , curves Tr1 (NPN) 30µA Ta= 25Ë šC 27µA 8 24µA 21µA 6 18µA 15µA 12µA 4 , Ta= 25Ë šC VCE=5V 3V 1V 200 100 50 20 25Ë šC 200 −55˚C 100 50 20 , =10 0.2 Ta=100˚C 25Ë šC −55˚C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20


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PDF AEC-Q101 2SA1037AKFRA 2SC2412KFRA 2SA1037AK 2SC2412K
Not Available

Abstract: No abstract text available
Text: 2 : Drain 3 : Source I Type Package s Absolute Maximum Ratings (Tc = 25Ë šC) Parameter , IDP ±10 A TC = 25Ë šC Ta = 25Ë šC 15 PD W 1.3 Channel temperature Tch 150 ˚C Storage temperature Tstg –55 to +150 ˚C s Electrical Characteristics (Tc = 25Ë , –VDS |Yfs | – ID 8 8 1.6 VDS=10V TC= 25Ë šC TC= 25Ë šC 5 Forward transadmittance , )VGS=15V TC= 25Ë šC 1.4 1.2 1.0 0.8 0.6 (1) 0.4 (2) 0.2 3V 0 0 0 4 8


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PDF 2SK963 300ms
2000 - Not Available

Abstract: No abstract text available
Text: 5.2 A 全許容損失(Tc= 25Ë šC) PD 2 W チャネル部温度 Tch 150 ˚C , 100 125 150 2 10000 Ta= 25Ë šC f=1MHz VGS=0V Pulsed 1000 Ciss Coss 100 10 0.1 , Current ( ) 4.000 ID = 7A 3.5A 0.040 0.015 10 Ta= 25Ë šC Pulsed 0.080 0.030 1 , DRAIN CURRENT : I D (A) DRAIN CURRENT : I D (A) 0.050 Ta=125˚C 75˚C 25Ë šC − 25Ë šC 0.001 0.1 0.01 0.001 0.1 10 1 Ta=125˚C 75˚C 25Ë šC − 25Ë šC 0.1 Fig.2 Forward


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PDF RK9410
3sk144

Abstract: No abstract text available
Text: +0.1 Parameter Drain-Source voltage 0.16 –0.06 s Absolute Maximum Ratings (Ta = 25Ë šC) s Electrical Characteristics (Ta = 25Ë šC) Parameter Condition Max Unit 15 mA VDS=VG2S, 0 , – VDS 24 200 24 3V 2V VG2S=4V Ta= 25Ë šC VG1S=0.8V 20 ID (mA) 0.6V 12 Drain current 100 16 0.4V 8 VDS=10V Ta= 25Ë šC 1V 20 150 Drain current ID (mA , | Yfs | – VG1S Ciss, Coss – VDS 30 60 VDS=10V f=1kHz Ta= 25Ë šC (mS) VG1S=4V 3V


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PDF 3SK144 50MHz 200MHz 3sk144
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