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SIT1602BCB7-33E datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
SIT1602BCB7-33E SIT1602BCB7-33E ECAD Model SiTIME Crystals, Oscillators, Resonators - Programmable Oscillators - MEMS OSC PROG XO LVCMOS 3.3V Original PDF

SIT1602BCB7-33E Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - 33E marking

Abstract: No abstract text available
Text: ) ' ,6+ 5 < 6)2= > + ! 3 ;! , 33E 5 8 < 6)2= > / @ "* ) $ ?E ,? ! '$2 ) 7?/ % ,32 , 33E (5 )* - 3! ! < 6)2= > ,33 ; E 6)2 , < 6)2= > ! + 3 )* < 6)2= > / @ , 33E 5 , 33E (5 2 E 6)2 2 5 2 ' E /.F , ! '$2 ) $9 ' 5 ,6+ < 6)2= > + ! 3 ;! , 33E 5 * < 6)2= > / @ "* ) )* 7?/ % ,32 , 33E (5 ( E 6)2 ( - 3! ! < 6)2= > ,33


Original
PDF LCS16CXXL08 IEC61000-4-2 LCS16CXXL08 33E marking
I20K

Abstract: H R C M F 2J 225
Text: v T C I NC 33E D 00030b? 0 «VTC m > / V T C j Incorporated DUAL HIGH-SPEED , -Pin Plastic DIP · 8-Pln CER DIP V- DISCONTINUED 4088 E -0 9 73 V T C IN C 33E D , , guaranteed by design 74 V T C INC 33E D cJ3öfici 5 e J GQ03abT 4 VTC VA2705 7 Figu re , : 50pF T®t 75 V T C INC VA2705 33E D ^ 366^ 0003070 '-7- , ~ 7 ? - 6 0 H IVTC , o p G a in v s T em p e ra tu re 76 V T C IN C 33E D cJ3fiöc i 2 c] D0Q3Q71 2


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PDF 00030b? VA2705 VA705 250ns 25MHz VA2705 theVA705 50pFj 100MHz 10MHz I20K H R C M F 2J 225
Not Available

Abstract: No abstract text available
Text: V T C INC 33E D 0 0 0 3 10 S 4 VTC 'T - '? < V c n - z o mk£VA4705 33E D TBflflTET 0 0 0 3 1 0 b b « V T C 7 -. 7 ELECTRICAL CHARA CTERISTICS , design. Input Referenced f=1 OKHz (Figure 2) -96 dB 112 V T C INC 33E D T 3 f i f l , Response Figure 2: C rosstalk T e s t C irc u it 113 V T C INC VA4705 33E J > m , Supply C u rren t vs Supply V o lta g e 114 V T C INC 33E D ^300=12^ DQD3J.D1 1 » V T C


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PDF VA4705 VA705 250ns 25MHz VA4705 application12 10MHz 100MHz
J300C

Abstract: vtc amplifier 20 30 A 3-11B
Text: V T C INC 33E D TSÔÔTE'I G Q D 3 1 1 3 3 » V T C é*Z> W ^É ^ +,-4* Incorporated , I ~ V r T ^ X h V- 119 v T c VA4706 IN C 33E D c 13âôc iE'i ^ 7 , . -96 dB 120 V T C INC 33E D TSflöTSS 0DD311S 7 VTC VA4706 T - 7 9 - 0 7 - 2 i , C IN C 33E D 311b = 1 VTC VA4706 T ~ 7 9 ' 0 7 - * l> TY P IC A L , Temperature (°C)_ _ Temperature (°C)_ 122 V T C INC 33E D


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PDF VA4706 VA706 200ns 25MHz VA4706 J300c 0QD312Q 10MHz vtc amplifier 20 30 A 3-11B
225 J 250 AVA CL 20

Abstract: RES800 A2706 VA2706 equivalent
Text: v T C I NC 33E D - _ = 5 3 8 DQQ3D7S T * V T C _ _ _ ' T ' 7 6! ' 0 7 ' Z Q ^ ^ w , LE · 8-Pin Plastic DIP 8-Pin CERDIP 81 V T C INC VA2706 33E D QGG3Q7b 1 * V T C T , 33E D t 13fläc 12c J 0QG3Q77 3 * V T C VA2706 T - 79~o1'M Figur« 1: S ettlin g T im e an d , VA2706 33E D T3ôflc JSt i QGQ307Ô 5 M V T C T - 7 f 'ó `? -2 à TYPIC AL PERFORMANCE CH , vs Supply V o lta g e 84 V T C INC 33E D 0 0 0 3 0 7 ^ 7 VTC VA2706 -p . 1 9 - 0


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PDF VA706 200ns 25MHz VA2706 VA2706 10MHZ 100MHz 50pFt 225 J 250 AVA CL 20 RES800 A2706 VA2706 equivalent
Not Available

Abstract: No abstract text available
Text: ADV MICRO (MEMORY) 33E D GSS7SSÖ 0 2 fl fl ü E b I AMD4 A m 2 7 C 1 0 0 , 33E D 0 2 57 5 2 0 0 0 2 0 0 0 3 _ fl BBAMDM T- 4 6 - 13-29 DIP v pp T-46-13-25 32 u , Am27C100 -ADV MICRO (MEMORY) ORDERING INFORMATION Standard Information 33E D G25752Ô , INFORMATION OTP Products (Preliminary) 33E D 02575SÖ 00 5f lö 0 5 T -4 6 -1 3 -2 9 1 AMD4 T , ADV MI CRO ( ME MORY ) 33E D H 0557528 002flfl0b 3 A MD 4 FUNCTIONAL


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PDF Am27C100 CDV032 T-46-13-25 Atn27C100
VA033

Abstract: SOIC pin-compatible with
Text: V T C INC 33E D 13ûûB I2l i GGÜ2c iR7 7 « V T C " T v 7c ì-z ^ VA033 Inco rp , IN C 33E D =1300=12=] 0 0 0 2 e !=10 * ) VTC ELECTR ICAL CHARACTERISTICS (Vs= ±5V. , 85 MHz 's 28 40 mA 4 33E D TBÖfiTSR O G O E W 0 «VTC VA033 W AFER , C IN C 33E D QQQ3QGG 1 M V T C VA033 Layout Considerations In order to fully , 33E D IS fla W QQ030Q1 3 M V T C VA033 Figure 3: A C Response Characteristics T '7 9 -


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PDF VA033 000V/ns. 100mA 85MHz HA-5033 LH0033 VA033 100mA 250MHz. QQ030Q1 SOIC pin-compatible with
vtc amplifier 20 30 A

Abstract: No abstract text available
Text: V T C INC 33E D 13ûûiai G003151 2 VTC m m V TC ^ Inco rp o rated V A 4 7 0 8 'T , · 14-Pln SOIC 127 v T c X NC 33E D ODDSISE _ _ 4 « V T C , . -96 dB 128 V T C IN C 33E D =1300=12^ 0003123 b « V T C VA4708 Figure , T C IN C 33E » T 3 f l f l c12c i 0003124 Ô VTC VA4708 T ~ TYPICAL , (°C)_ 130 V T C INC 33E S Q0Q312S T « V T C VA4708 TYPICAL PER FOR M


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PDF G003151 150ns 100MHz VA4708 VA708 VA4708 10MHZ vtc amplifier 20 30 A
lg 8838

Abstract: ULS-2000H ULS2004 ULS2004 ALLEGRO
Text: ALLEGRO MICROSYSTEMS INC 33E D; 05G433Ô O DO S5 3 0 IA L6R HIGH-VOLTAGE , MICROSYSTEMS INC 33E T > B 0504330 0005531 T IAL GR I N W ATTS DEVICE PART NUMBER , MS I NC 33E » 0SQ433Ö GQDS S 3 2 Q W LGR ELECTRICAL CHARACTERISTICS over op , I NC 33E D GS0M33Ö Q DQS 533 3 m - IALGR rtririffflfB W H - Ç Ü R R E N T D A , R OS Y ST E MS INC 33E D 05Q433Ô ,.- · · - .-' ' ' GG05S34 4 BrALGR . .


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PDF 05G433Ô ULS2000H LS2000R IL-STD-883, 16-pin ULS20X2" ULS20X3* ULS20X4* X7LS20X5? lg 8838 ULS-2000H ULS2004 ULS2004 ALLEGRO
AM27C1024

Abstract: ZDA11 06780-007E AM27C1024-155
Text: ( ! ADV MICRO (MEMORY) 33E D □25752fl G02fiä3b 1 IAMD4 Am27C1024 1 Megabit (65,536 , Amendment to ADV MICRO (MEMORY) 33E D D2S7SSÔ DG2ÛÔ37 3 IAMD4 CONNECTION DIAGRAMS Top View DIPS , (MEMORY) 33E » ■02S7S28 0026336 5 ■AMDM ORDERING INFORMATION ' T-46-13-29 Standard Products , Am27C1024 ADV MICRO (MEMORY) 33E D ■025752Ô 002003=1 7 ■AM»M ORDERING INFORMATION (Cont'd.) \ . , 's standard military grade products. 4 Am27C1024 ADV MICRO (MEMORY) 33E D Q257SEÖ QG2ÖÖ4Ü 3 HAMDH


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PDF 25752fl G02fià Am27C1024 16-Bit) 40-pln 44-pad T-46-13-? CDV040 T-46-13-25 ZDA11 06780-007E AM27C1024-155
DMJ3086

Abstract: DMJ4317 DME4750-000 mip 290 DMF3068-000 DMF6554-000 dmf5818 DMJ3181-000 DMF3291-000 DME3040-000
Text: ALPHA IN»/ SEMICONDUCTOR 33E D ■QSöSHMB 0000754 7 mklP Silicon Beam-Lead and Chip Schottky , limiters. 9000-1172 2-17 ! AL P ALPHA IND/ SEMICONDUCTOR 33E D ■0S65M43 0QQ072S 1 Silicon Beam-Lead , ALPHA IN»/ SEMICONDUCTOR 33E D ■0565443 DQ0072b 0 ■ALP Silicon Beam-Lead and Chip Schottky , ALPHA IN»/ SEMICONDUCTOR 33E D ■OSfiS443 0D00727 2 ■ALP Silicon Beam-Lead and T 07 07 Chip , IND/ SEMICONDUCTOR 33E ~1> ■~^SaSMW_oMD75fl"TWALP Silicon Beam-Lead and Chip Schottky Barrier Mixer


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PDF DMV3946-000 DMB4500-000 DMB4501-000 DMB6780-000 DMB3000-000 DMB6782-000 DMB3001-000 DMB6781-000 DMB3003-000 DMB3004-000 DMJ3086 DMJ4317 DME4750-000 mip 290 DMF3068-000 DMF6554-000 dmf5818 DMJ3181-000 DMF3291-000 DME3040-000
1A Dual Power Operational Amplifier

Abstract: 4036A
Text: V T C IN C 33E D cl 3 ô f l c i 2 ci DDD3D1S 3 IVTC VTC Incorporated , '- ' 6 ] Out 5] Balance 4036 A -1 3 21 V T C INC VA705 33E D 000301b S VTC T , 1.8 1.8 MHz Notes: 1. Not tested, guaranteed by design 22 V T C INC 33E D , sq. mils) 0.89x0.89 mm (0.79 sq. mm) Shipped In die crates. 23 v T C INC VA70S 33E D , C INC 33E D c 13flac i2c l ODOBOn D »VTC VA705 T ' - 7 ? - d h - / d T YPIC A L


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PDF VA705 250ns 25MHz VA705 00V/V, 13fifi` 0003D23 1A Dual Power Operational Amplifier 4036A
handling of beam lead diodes

Abstract: No abstract text available
Text: ALPHA IN»/ SEMICONDUCTOR 33E D OSÖSM43 DGOQfllM Ö ALP P'D'7-I 5 Mesa Beam-Lead PIN Diodes Features New Stronger "Full Frame" Design 8 Grams Typical Pull Strength Broad Product , factory for information. 9000-1184 ALPHA IN»/ SEMICONDUCTOR 33E D 0505443 GDDDÔ15 T ALP , 3-11 ALPHA IN»/ SEMICONDUCTOR 33E D D5Û5443 GODDfllb 1 ALP T -0 7 -1 5 Mesa Beam-Lead , . Forward Bias Current for DSM6380-30 3-12 ALPHA IN»/ SEMICONDUCTOR 33E » D5ÔS4M3 GGQGÔ17 3


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PDF DSM6380 DSM6380-30 DSM6380/6381 DSM6340 DSM6361. DSM6361 DSM6340 DSM6363, DSM6341 handling of beam lead diodes
TDM 5510

Abstract: T51U octal MOSFET ARRAY DG485 DG485DJ DG485DN DG485AK octal p-channel ARRAY 10508
Text: SILICONIX INC 33E D ■6254735 0aibS33 Q «SIX JJTHgKfi T-si-u DG485 Low-Power CMOS Octal , 9002 - 5-187 SILICONIX INC DG485 33E D Ö254735 0Dlb534 2 ISIX Siliconix incorporated , XXIC 10508 9002 - SILICONIX INC 33E J> ■0254735 0Qlb53S 4 «SIX ^tA incorporated _13^5485 , Room -75 dB DS XXIC 10508 9002 - 5-189 SILICONIX INC 33E D ■Ô254735 ü01bS3b b «SIX , CrSificonix incorporated 33E D ■Ö25473S QQlb537 fi «SIX DG485 TYPICAL CHARACTERISTICS Supply


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PDF 0aibS33 DG485 125-C DG435 Q01bS42 T-51-11 TDM 5510 T51U octal MOSFET ARRAY DG485 DG485DJ DG485DN DG485AK octal p-channel ARRAY 10508
vtc amplifier 20 30 A

Abstract: vtc amplifier
Text: Y t < ; xnc 33E D ^368^2=5 0003033 ^ VTC ^¿% VTC In co rp o rated *' H , (°c/w) 180 180 TC(°C) 110 95 t a (°c ) 70 70 41 V T C INC VA708 33E D , Power Bandwidth BWFP 4.8 4.8 MHz 42 V T C I NC 33E ® QG03 Q37 2 MVTC , crates. 43 V T C IN C VA708 33E D ^ 3 0 0 ^ 0003030 M VTC T '7 9 Figure 1: S , B B Ü T C W W II OV 44 V T C I NC 33E D =5300=12=1 000303=1 b VTC


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PDF 150ns 100MHz VA708 10MHZ VA708 vtc amplifier 20 30 A vtc amplifier
VA705

Abstract: VA705J VA705K VA705L VA705XS IOBIC
Text: V T C INC 33E » TBÖÖTB^ DDD3D1S 3 VTC |%f|vTC Incorporated VA705 HIGH-SPEED PRECISION , Material Copyrighted By Its Respective Manufacturer V T C INC VA705 33E D ^ÛÔ^T 00031111b S «VTC , T C INC 33E DIE INFORMATION WAFER TEST LIMITS Vs= ±5V, Ta= 25° C unless otherwise stated , crates. 23 This Material Copyrighted By Its Respective Manufacturer V T C INC VA705 33E D ■Taaa^ai , Manufacturer v T C INC 33E ]) ■^aaa^ aDQaon o «vtc VA705 TYPICAL PERFORMANCE CHARACTERISTICS (VS= Â


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PDF VA705 250ns 25MHz VA705 000VA/, 0DG30S3 10MHz 100MHz VA705J VA705K VA705L VA705XS IOBIC
J 13002

Abstract: 10KHZ VA706J VA706K VA706XS 3S400
Text: V T C INC ÉlllVTC ^¡^ Incorporated 33E D TBÔflTST DDG3G2S b ■VTC VA706 T-iWo , INC 33E D m ^300=121 000302b Ö ■VTC VA706 ELECTRICAL CHARACTERISTICS (Vs= ±5V, TA=25°C unless , ICminer.com Electronic-Library Service CopyRight 2003 1 A V T C INC 33E D ■=5366=12=1 00G302fl 1 MVTC , Electronic-Library Service CopyRight 2003 V T C INC 33E D ■TSflaTBI 000302=1 3 «VTC VA706 T-7?~à 7-/à , | Temperature fC) 35 Powered by ICminer.com Electronic-Library Service CopyRight 2003 V T C INC VA706 33E J


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PDF VA706 200ns 25MHz 00G3033 VA706 10MHz 50pFf 100MHz J 13002 10KHZ VA706J VA706K VA706XS 3S400
VA2713

Abstract: Modulation using OTA
Text: V T C INC 33E D "ISiSSE1 ! 0003013 1 « V T C ^VT C y Incorporated V A 2713 d u a , PLIFIED SCH EM ATIC (Each OTA) 99 1 V T C INC VA2713 33E D 00030^4 3 W V TC , design. ^C l where C e n t a l Load Capacitance 100 V T C INC 33E D =1388^2^ ODDSCHS , V T C INC VA2713 33E D ti 3 ö ö c i S `i 0 0 3 G cIfci 7 VTC TEST C IR C U , 33E D o a o s in ? s « m e VA2713 7 "- 7 9 - V O T Y P IC A L P E R F O R M A N


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PDF 16-Lead 75MHz 100MHz VA2713 50MHz. 30MHz 30MHz. 150S1 100KHZ 10MHz Modulation using OTA
Am27C512s

Abstract: AM27C512-155
Text: ADV MICRO (MEMORY) 33E D Q25752Ô 0020010 T IA M ]> M Am27C512 65,536 X 8-Bit CMOS EPROM , : November 1989 ADV MICRO (MEMORY) 33E ]> H 0257SEÖ 002fian 1 CONNECTION DIAGRAMS "" iamd4 Top View DIP , PLCC. Am27C512 2 i AD V MICRO (MEMORY) 33E J> ■D25752Ô Q02âê2D Û BAMUM LOGIC SYMBOL ( T , = Ground NC = No Internai Connection DU = No External Connection Am27C512 3 MICRO (MEMORY) 33E , additional data on AMD's standard military grade products. 4 Am27C512 ADV MICRO (MEMORY) iamd4 33E ]> â


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PDF Q25752Ã Am27C512 512K-bit, CDV028 T-46-13-29 T-46-13-25 G2S75SÃ CLV032 Am27C512s AM27C512-155
vs621

Abstract: vs620 S/BIP/SCB345100/B/30/10/RP125-30-
Text: V T C INC 33E D GDG31hl 3 *VTC A V W vtc Incorporated VS620/VS621 1 , _ 167 V T C INC VS620/VS621 33E D 0 G 0 3 1 b 2 S VTC V e e = -5.2V± 10 % /V cc = , 168 V T C INC 33E D 31L3 7 V T C VS620A/S621 7 " - 7s - v s - ô VS620J V 3 6 2 0 , do not require pull-down resistors, but are designed to function with a 33E D c l3 a flc ]2 , + · IA -' IA+ IB -' IB+ ICLK- ICLK+ · OCLK- OCLK+ 170 V T C INC 33E D


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PDF GDG31hl VS620/VS621 52-Lead RP-125 VS620 VS621 10-bit RP-125. S/BIP/SCB345100/B/30/10/RP125-30-
sr 13002

Abstract: 13002 FL
Text: V T C INC 33E J > c J3ôfl'iEc 1 0003G2S b 'T IVTC VA706 TC Incorporated ' ' l (3 , ] v T C INC VA706 33E D 0 0 0 3 0 2 b Ö VTC T - lî - ï l- 'à ELECTRICAL CHARA CTERISTICS (Vs = , 2.2 MHz 32 V T C INC 33E D TSêô'ia'l 0 0 0 3 0 2 7 T VTC VA706 T - 7 9 - Ù , (1225 sq. mils) 0.89 x 0.89 mm (0.79 sq. mm) Shipped in die crates. 33 V T C INC VA706 33E D , s t C ircuit 34 V T C INC 33E D =1300^2^ 000302=1 3 VTC VA706 T - 79-Ì7-/& T


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PDF 0003G2S VA706 200ns 25MHz VA706 sr 13002 13002 FL
Not Available

Abstract: No abstract text available
Text: RAYTHEON/ SEMICONDUCTOR 33E D ■7S^73t,Q □□07471 1 B f R T N Product , ¥ RAYTHEON/ SEMICONDUCTOR CB NPN ' 33E D B _ f - 75173t , RayHteon RAYTHEON/ SEMICONDUCTOR 33E D Medium Current General Purpose Amplifier & Switch 7 S à , 250 250 3 RAYTHEON/ SEMICONDUCTOR 33E D CB NPN 75173^ 0 □ □07405 1 RTN , / SEMICONDUCTOR 33E II Medium Current General Purpose Amplifier & Switch ■? S 1 7 3 tD 00D7>ia3 3


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PDF 500mA. 2N2222A/JAN 2N2221A/JAN 2N2219A/JAN 2N2218A/JAN 968-9211um T-27-27 O-116) 14-Lead 100BSC
BH9-1

Abstract: No abstract text available
Text: 35AE753941)2,1!65E7103B11 F"'17E6 11AE7%97'64 E1 88888888888888"11# "#$98 1 21 6'A! 3%3E 1)*)+1 , (1B91F41+#(1A1B91 5AE 3%3E 16!E16AA!3E1B179D11B1E17E 9''E4E1A90E715AA!71%3!BE734D14EB097"11 1 , 3 E13519B53E19%15AE 3%3E 1 06E!E4DB11764DE1 1 1 8 1 1 1 8 8 8 8 8 8 , '6211$EE149BE1B1 M11F1 M1 M1I1F1 A'1 M1O15AE 3%3E 1-&1 E4BE71 06E!E4DB11 P1141 P1 P1I141 A'1 P1O15AE 3%3E 1,8/1 E4BE7106E!E4DB11 B1 1 1 ,1 +9!6BE11 B711B%1 C9B1 1 1


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PDF 123456789AB6CDC6E7C3F8 A1B91 B3946 99BA734B1 AE76B 65E71B7645 3BBE71 35AE753941 65E7103B11 11AE7 BH9-1
P-Channel Depletion Mosfets

Abstract: B4477 DG381AAK Depletion
Text: SI L I C O N I X Jm B INC 33E D flSSM73S Q O l h M M B T «SIX e x ' S ilic o n ix , DS XXIC 10534 9002 - 5-95 SILICÔNIX INC 33E D Ô254735 GQlb444 1 [SIX , Shown tor Logic "1" Input 5-96 DS_XX1C_10534_9002_- SILICONIX INC 33E ß Ô 2 5 4 7 , _10534_9002_- 5-97 SILICONIX INC 33E D WÊ 6554735 001b44t S « S I X DG381A/384A/387A/390A , _10534_9002_- SILICONIX INC 33E D A 2 5 4 7 3 5 0 D l b 447 7 H S I X fn r S ilic o n ix in c o r p o r a


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PDF flSSM73S DG381A/384A/387A/390A DG180 DG38XA P-Channel Depletion Mosfets B4477 DG381AAK Depletion
vtc amplifier 20 30 A

Abstract: LA 50-P connections
Text: V T C INC 33E D ^300=52^ D003QÖ3 T 1 VTC 'W # J # VTC J '. * ^ , -Pin Plastic DIP 89 V T C INC 33E » l a a a l E 1! 0 0 0 3 0 4 4 0 «VTC V A 2 7 0 , . -96 dB 90 V y c XNC 33E D cl 3 a f l c12':l QQ03Df l5 2 V TC VA2708 , 4 Crosstalk (db) = 20 log 91 V T C INC VA2708 33E D isa a *^ a a o 3o a b 4 , 120 140 -60-40 -20 _ Temperature (°C)_ 92 V T C I NC 33E D


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PDF D003Q 150ns 90V4is 100MHz VA2708 c13fific] DQ30e VA2708 vtc amplifier 20 30 A LA 50-P connections
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