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LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

SIT Static Induction Transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
SIT Static Induction Transistor

Abstract: 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182
Text: Another Tokin exclusive. Static Induction Ibansisiors SIT ( Static Induction Transistor ) w as in , d furth er low ering th e internal resistance in SIT , this transistor can h a n d le large p o w e r , 1979 as a n industrial p o w e r SIT . SIT offers several o u tsta n d in g a d v a n ta g e s o v e r o , le only low electrical cu rrents, SIT is ideal for larg e-p ow er applications. A n d b y a rra n g , , SIT can b e readily a d a p te d to parallel o p eratio n, so you can use up to a plenty of 1 kW- or 3


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PDF 2-26A L-03E SIT Static Induction Transistor 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182
1991 - SIT Static Induction Transistor

Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages rf POWER BJTs mrf154 amplifier all mosfet vhf power amplifier narrow band uhf microwave fet
Text: , excluding the SIT ( Static Induction Transistor which is a depletion mode junction FET) and Gallium , positive for an NPN type transistor . Best results are obtained with a constant voltage source of 0.6 ­ , RF Application Reports AN1529 BIAS C2 C3 RF INPUT transistor , whether in a single , , i.e., provide matching networks inside the headers, close to the transistor chip. A basic common base , signal circuits for receiver and low power transmitter designs. The selected transistor parameters


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PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages rf POWER BJTs mrf154 amplifier all mosfet vhf power amplifier narrow band uhf microwave fet
2015 - MG1007-42

Abstract: MG1020-M16 1004mp MG1052-30 MSC1075M
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined , : Diode Products: Power Transistor Products: Microsemi Corporation Microsemi Corporation , Contents Diode Products Power Transistor Products Overview: Diode Products 4 About RF & Microwave Power Transistor Products 26-27 PIN Diodes Selection Guide 5 GaN & SiC & SiC Wide


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PDF MS4-009-13 MG1007-42 MG1020-M16 1004mp MG1052-30 MSC1075M
2008 - mcz 300 1bd

Abstract: SIT Static Induction Transistor philips igbt induction cooker HgCdTe UJT pin identification Photo DIAC thyristor BT 161 power IGBT MOSFET GTO SCR diode rct Thyristor dg23 transistor smd
Text: Transistor : FET MOSFET IGBT (Insulated Gate Bipolar Transistor : , . ) ) SCR (Silicon , ) ) ) ) ) IC) IC IC DRAM (Dynamic Random Access Memory) SRAM ( Static Random Access Memory) ROM FeRAM , . (FET) MOSFET MESFET Metal Semiconductor Field Effect Transistor . P HEMT High Electron Mobility Transistor P (G) - (O) (S) · GaAs , Junction FET (M) N - - . GaAs HBT Heterojunction Bipolar Transistor


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PDF 128bit Division/e-Busin125 mcz 300 1bd SIT Static Induction Transistor philips igbt induction cooker HgCdTe UJT pin identification Photo DIAC thyristor BT 161 power IGBT MOSFET GTO SCR diode rct Thyristor dg23 transistor smd
SIT Static Induction Transistor

Abstract: schematic diagram induction heater mosfet induction heater schematic diagram induction heating diagram induction heater Bipolar Static Induction Transistor low frequency induction heater AC/DC Electronic Load induction heater induction heating control circuit diagram
Text: sensitivity type LED operate current: typical 0.31 mA 2. Power MOSFET incorporating SIT ( Static Induction Transistor ) allows control loads up to 0.15 A with input current 2 mA 3. Low-level off state leakage , conventional transistor type. As a result, a variety of circuit connection are possible and power circuits


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PDF AQV234 E43149 LR26550 AQZ105 AQZ205 AQZ107 AQZ207 AQZ104 AQZ204 AQZ202V SIT Static Induction Transistor schematic diagram induction heater mosfet induction heater schematic diagram induction heating diagram induction heater Bipolar Static Induction Transistor low frequency induction heater AC/DC Electronic Load induction heater induction heating control circuit diagram
1998 - SIT Static Induction Transistor

Abstract: schematic diagram induction heater pulse transformer 4503 6 pin LR26550 AQV234AZ AQV234AX AQV234A AQV234 AQV21 AQV20
Text: sensitivity type LED operate current: typical 0.31 mA 2. Power MOSFET incorporating SIT ( Static Induction Transistor ) allows control loads up to 0.15 A with input current 2 mA 3. Low-level off state leakage , conventional transistor type. As a result, a variety of circuit connection are possible and power circuits


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PDF AQV234 E43149 LR26550 AQZ105 AQZ205 AQZ107 AQZ207 AQZ104 AQZ204 AQZ202V SIT Static Induction Transistor schematic diagram induction heater pulse transformer 4503 6 pin LR26550 AQV234AZ AQV234AX AQV234A AQV234 AQV21 AQV20
Not Available

Abstract: No abstract text available
Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET (Common Gate) GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR ( SIT ) capable of providing 1500 Watts of RF power from 406 to 450 MHz. The transistor is designed , operating conditions as a Pulsed RF transistor as listed under the Functional Characteristics Note 2


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PDF 0405SC-1500M 0405SC-1500M 1500Watts, 125mA
2010 - SIT Static Induction Transistor

Abstract: transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET "static induction transistor" static induction transistor sit transistor electrolytic capacitor, .1uF 0405SC-1500M
Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET (Common Gate) The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR ( SIT ) capable of providing 1500 Watts of RF power from 406 to 450 MHz. The transistor is designed , operating conditions as a Pulsed RF transistor as listed under the Functional Characteristics Note 2


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PDF 0405SC-1500M 0405SC-1500M 1500Watts, 125mA SIT Static Induction Transistor transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET "static induction transistor" static induction transistor sit transistor electrolytic capacitor, .1uF
2010 - electrolytic capacitor, .1uF

Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor
Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET (Common Gate) The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR ( SIT ) capable of providing 2200 Watts of RF Peak power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar


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PDF 0405SC-2200M 0405SC-2200M 2200Watts, 55TW-FET 120mA electrolytic capacitor, .1uF electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor
2008 - j130 fet

Abstract: 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification
Text: 0405SC-1000M Rev B 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR ( SIT ) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to a series of High


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PDF 0405SC-1000M 0405SC-1000M 1000Watts, j130 fet 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification
2009 - static induction transistor SIT

Abstract: "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification static induction transistor 1000UF 20V CAPACITOR x2404 "Static Induction Transistor" transistor 1000W
Text: 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET (Common Gate) 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR ( SIT ) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar


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PDF 0405SC-1000M 0405SC-1000M 1000Watts, static induction transistor SIT "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification static induction transistor 1000UF 20V CAPACITOR x2404 "Static Induction Transistor" transistor 1000W
2008 - electrolytic capacitor, .1uF

Abstract: silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf
Text: 0150SC-1250M Rev A 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR ( SIT ) capable of providing 1250 Watts minimum of RF power from 150 to 160 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as VHF Weather Radar and Long Range Tracking Radar. The device is the first in a series of


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PDF 0150SC-1250M 0150SC-1250M 1250Watts, 500mA, electrolytic capacitor, .1uF silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf
0150SC-1250M

Abstract: No abstract text available
Text: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR ( SIT ) capable of providing 1250 Watts minimum of RF power from 150 to 160 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as VHF Weather Radar and Long Range Tracking Radar. The device is the first in a series of


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PDF 0150SC-1250M 0150SC-1250M 1250Watts, 500mA,
2008 - 1000uf electrolytic capacitor

Abstract: capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet
Text: 0405SC-1000M Rev A 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR ( SIT ) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to a series of High


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PDF 0405SC-1000M 0405SC-1000M 1000Watts, 1000uf electrolytic capacitor capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet
Not Available

Abstract: No abstract text available
Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET (Common Gate) GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR ( SIT ) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an


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PDF 0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS,
2010 - J294

Abstract: Static Induction Transistor SIT electrolytic capacitor, .1uF sit transistor SIT Static Induction Transistor 2.t transistor j294 transistor sit "Static Induction Transistor" transistor 1000W J29-4
Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET (Common Gate) The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR ( SIT ) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an


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PDF 0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS, J294 Static Induction Transistor SIT electrolytic capacitor, .1uF sit transistor SIT Static Induction Transistor 2.t transistor j294 transistor sit "Static Induction Transistor" transistor 1000W J29-4
Not Available

Abstract: No abstract text available
Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET (Common Gate) GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR ( SIT ) capable of providing 2200 Watts of RF Peak power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range


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PDF 0405SC-2200M 0405SC-2200M 2200Watts, 55TW-FET 120mA
2008 - electrolytic capacitor, .1uF

Abstract: z1071 "Static Induction Transistor" "silicon carbide" FET atc100b sit transistor SIT Static Induction Transistor electrolytic capacitor, 1uF 700B 0150SC-1250M
Text: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR ( SIT ) capable of providing 1250 Watts minimum of RF power from 150 to 160 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as VHF Weather Radar and Long Range Tracking Radar. The device is the first in a series of


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PDF 0150SC-1250M 0150SC-1250M 1250Watts, 500mA, electrolytic capacitor, .1uF z1071 "Static Induction Transistor" "silicon carbide" FET atc100b sit transistor SIT Static Induction Transistor electrolytic capacitor, 1uF 700B
4011 cmos

Abstract: high frequency welder circuit diagram Static Induction Transistor SIT ic cmos 4011 4011 c-mos SIT Static Induction Transistor LRGAT150F100 pinout of IC 4011 NAND 4011 ic full-bridge welder
Text: charger) • Induction Heating • X-ray Power Supply LRGAT BLOCK DIAGRAM .: EXTERNAL COMPONENTS , Voltage 13 Volts Q, Q Input Signal Voltage 13.6 STATIC ELECTRICAL CHARACTERISTICS , – Powered by ICminer.com Electronic-Library Service CopyRight 2003 0257^0^ 0001303 SIT Advanced Power , Transistor Q2 = BC307 PNP Transistor R1, R4 & R11 = 10K Ohm Trim Pot. yR2 = 100 Ohm 1/4W Resistor_ • Parts


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PDF lrgat75f100 1000v 80KHz 400VAC 6160xx1T2300 DIN46 F-33700 4011 cmos high frequency welder circuit diagram Static Induction Transistor SIT ic cmos 4011 4011 c-mos SIT Static Induction Transistor LRGAT150F100 pinout of IC 4011 NAND 4011 ic full-bridge welder
1994 - "CHAPTER 1 Introduction to Power Semiconductors"

Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
Text: known as the J-FET (junction FET) or SIT ( Static Induction Transistor ). 7 Introduction BASE , J-FET ( SIT ) BIPOLAR TRANSISTOR - MOS Fig.4 The three basic three layer devices The third , on-state voltage drop, VON. The ( static ) on-state losses may be calculated from: PSTATIC = .VON .ION , capabilities of devices, it is necessary to consider static and dynamic losses, drive energy, dV/dt, dI/dt , the drive current. This device is called a High Voltage Transistor or HVT. The second one is to have


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MTP565

Abstract: application circuits of IRF330 AN-936A
Text: generators for induction heating, ultrasonic generators, audio amplifiers, A M transmitters, compu ter , through the channel region, and vertically out of the source, as illus trated. The flow of transistor , , and its current handling capability is typically as high as that of the transistor itself. Some , precautions. Power H E X F E T s , being M O S de vices, can potentially be damaged by static charge when , , they have much greater input capacitance, and are much more able to absorb static charge without


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PDF 1RF330 MTP565 HPWR6504 VN400IA VN0340B1 AN-936A application circuits of IRF330 AN-936A
TFK diode

Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 diode 12A3 76 TFK 244 tfk
Text: Trlpleton Power Transistor • i ? ■TFK 3080 D telefunken electronic | Preliminary specifications | r , °r UHI 1 UHI 1 1 VT 1 i i -1- 1 4-., L-, f Irti 1 1 I i -H 1 î t 244 sit sum 3Sw H , Junction case Power transistor Free-wheel diode Characteristics Tem = 25°C, unless otherwise specified , telefunken electronic 17e t> 0^200^ • Family of curves Besides the static (d. c.) and dynamic (a. c , for TO-92 Transistors 06 ¡Z Orientation of transistor on tape11 Additional marking for specials51


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PDF S1000 2/1997-0888E T0126 15A3DIN TFK diode diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 diode 12A3 76 TFK 244 tfk
sump pump circuit diagram

Abstract: PIC based fire alarm system load sensor pic circuit sensor circuit diagram water pump circuit diagram diagram of 12 volts boat system diagram of reed switch FLOAT SENSOR sound to light sensor low cost fire alarm
Text: voltage polarity sensitive induction motors are used as the pump. The smart sensor will also detect , reached only 20mm. In this way the motor does not sit and chatter on and off in rapid succession. The


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PDF ph0771 MK06MK06-4 MK06-5 MK06- MK06MK06-6 MK06MK06-7 sump pump circuit diagram PIC based fire alarm system load sensor pic circuit sensor circuit diagram water pump circuit diagram diagram of 12 volts boat system diagram of reed switch FLOAT SENSOR sound to light sensor low cost fire alarm
diode js7

Abstract: Transistor B123 Transistor DF- RO DF RV transistor transistor sit R/smd diode js7 tr/4114R-003-R1/diode js7
Text: 2DI3OOA-O5O(300A) POWER TRANSISTOR MODULE : Features Ifl^^ii : Outline Drawings High , "V x M DC Ib 10 A 1ms Ibp 20 A one Transistor Pc 1200 W two Transistors Pc 2400 W fê o" SP um , Conditions Min Typ Max Units m is jit Rih(j-c) Transistor 0.1 "C/W & s tjt Rth(j-c) Diode 0.31 °c/w & , O.OI I0" IO"2 Hi M t [sec) IO" Transient Thermal Resistance ( Transistor ) 200 I00 , öl i»- * u it M Kr 3 1 V WV Sit m ^ rA h- a Si 4< a ? ' ^ -i. P ° ^ ^ ^ ' -J M 1 11 g fe at


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PDF E82988 diode js7 Transistor B123 Transistor DF- RO DF RV transistor transistor sit R/smd diode js7 tr/4114R-003-R1/diode js7
Not Available

Abstract: No abstract text available
Text: FLEXIBLE MEMORY INTEGRATION - VARIABLE SIZE AND ORGANIZATION - UP TO 64 K bit ROM AND STATIC RAM HIGH SPEED , 2 S TST MCM C O M P O SIT E A R R A Y S TOPOLOGY 6 PERIPHERY I/O CELLS CORE , electronic 6-66 M C M .H R/Rev. 1.0 SfibfiHSti G D G M H i b 6bb MCM C O M P O SIT E A R R A Y S , of 6 tra n sistors w hich offer fully static operation and low pow er consum ption. The RAM cell has , ROM cell has one transistor per cell. The sizes for the ROM array can vary in range of 128 to 32768 w


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