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MIC23099YFT-T5 Microchip Technology Inc IC REG BCK BST ADJ DL SYNC 14QFN
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5604891 Phoenix Contact SIEMENS 8CH FUSE DIST MODULE
MAX1771CPA+T Maxim Integrated Products IC REG CTRLR BST/BUCK-BST 8DIP
1287700000 Weidmüller Interface GmbH & Co. KG TERMINAL MARKER TYPE BST MARKER
2190 Adafruit Industries BOARD CONVERTER 5V USB BUCK BST

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thyristor AEG t 10 n 600

Abstract:
Text: BSt T68L BSt T66 TP101 N Discs BSt H61 BSt L44 BSt L61 BSt N44C BSt N 49B BSt N61 BSt P61 BSt P64 , 16 -3 2 16 -3 2 8 -1 6 BSt H61 BSt L44 BSt L47 BSt L49 BSt L61 BSt N44C BSt N47C BSt N49B BSt N61 BSt , from the former Siemens programme, however, in future with new type designation: Si emensDesignation eupecDesignation SiemensDesignation eupecDesignation Phase control thyristors BSt R68L BSt T65 BSt T66 BSt T68H BSt T68L BSt T68N BSt T68S BSt U68H BSt U68S BSt U78S BSt BSt BSt BSt BSt P49 P49L Q63 R63H


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SIEMENS BST

Abstract:
Text: SIEMENS 1M X 16-Bit Dynamic RAM (1 k & 4k-Refresh) HYB 3116160BSJ/ BST (L)-50/-60/-70 HYB 3118160BSJ , SIEMENS HYB 3116(8)160BSJ/ BST (L)-50/-60/-70 3.3V 1M X 16-DRAM I / O l 1 / 0 2 ··· 1 / 0 1 6 Block Diagram for HYB 3116160BSJ Semiconductor Group 621 SIEMENS HYB 3116(8)160BSJ/ BST (L)-50/-60 , ) 623 SIEMENS HYB 3116(8)160BSJ/ BST (L)-5Q/-6Q/-70 3.3V1MX 16-DRAM DC Characteristics (values , Self Refresh. Semiconductor Group 628 SIEMENS HYB 3116(8)160BSJ/ BST (L)-50/-60/-70 3.3V 1M


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PDF 16-Bit 3116160BSJ/BST 3118160BSJ/BST 3118160BSJ/BST-50) 3118160BSJ/BST-60) 3118160BSJ/BST-70) 3116160BSJ/BST-50) 3116160BSJ/BST-60) 160BSJ/BST SIEMENS BST SIEMENS BST h 05 90 SIEMENS BST h 05 110 SIEMENS BST h 35 SIEMENS BST 68 SIEMENS BST h 05 60 SIEMENS BST L 35 90 SIEMENS BST N 45 b 110 SIEMENS BST H 05 - 110 SIEMENS BST h 05 20
SIEMENS BST

Abstract:
Text: SIEMENS 1M X 16-Bit EDO- Dynamic RAM (1 k & 4k-Refresh) HYB 3116165BSJ/ BST (L)-50/-60/-70 HYB , HYB 3116(8)165BSJ/ BST (L)-50/-60/-70 3.3V 1M X 16 EDO-DRAM SIEMENS The HYB 3116(8)165BSJ/ BST is , ÖE3SL0S G D ñbW 2T5 HYB 3116(8)165BSJ/ BST (L)-50/-60/-70 3.3V 1M X 16 EDO-DRAM SIEMENS Pin , HYB 3116(8)165BSJ/ BST (L)-50/-60/-70 3.3V 1M X 16 EDO-DRAM SIEMENS Block Diagram for HYB 3116165BSJ Semiconductor Group 646 ÔEBSbQS QOflbRm =153 SIEMENS HYB 3116(8)165BSJ/ BST (L


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PDF 16-Bit 3116165BSJ/BST 3118165BSJ/BST 3118165BSJ/BST-50) 3118165BSJ/BST-60) 165BSJ/BST SIEMENS BST SIEMENS BST t BST60 BST70 SIEMENS BST h 35 SIEMENS BST L 35 90
SIEMENS BST

Abstract:
Text: SIEMENS 1M X 16-Bit Dynamic RAM (1 k & 4k-Refresh) HYB 3116160BSJ/ BST (L)-50/-60/-70 HYB , /-60/-70 3.3V 1M X 16-DRAM SIEMENS The HYB 3116(8)160BSJ/ BST is a 16 MBit dynamic RAM organized , )160BSJ/ BST (L)-50/-60/-70 3.3V 1M X 16-DRAM SIEMENS Pin Configuration (top view) P-SOJ-42 (400 mil , 620 Ö235b05 GGfibTlS ñtil SIEMENS HYB 3116(8)160BSJ/ BST (L)-50/-60/-70 3.3V1M X 16 , – fl235fc,DS □Oflti'il? b34 HYB 3116(8)160BSJ/ BST (L)-50/-60/-70 3.3V1M X 16-DRAM SIEMENS Absolute


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PDF 16-Bit 3116160BSJ/BST 3118160BSJ/BST 3118160BSJ/BST-50) 3118160BSJ/BST-60) 3118160BSAS 160BSJ/BST 16-DRAM flS3Sb05 SIEMENS BST SIEMENS BST f 35 80 SIEMENS BST h 35 SIEMENS BST t BST60 SIEMENS BST f 05 90 SIEMENS BST h 05 90 SIEMENS BST H 45 90 SIEMENS BST N 45 b 110
SIEMENS BST h 05 90

Abstract:
Text: Group 7 SIEMENS HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/ BST (L)-50/-60 1M X 16 - DRAM AC , SIEMENS AC Characteristics HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/ BST (L)-50/-60 1M X 16 - DRAM (co , ) Semiconductor Group 13 SIEMENS HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/ BST (L)-50/-60 1M x 16 - DRAM Semiconductor Group 14 SIEMENS HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/ BST (L)-50/-60 1M x 16 - DRAM Semiconductor Group 15 SIEMENS HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/ BST (L)-50/-60 1M X 16 - DRAM


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PDF 16-Bit HYB5116160BSJ-50/-60 HYB3116160BSJ/BST HYB3118160BSJ/BST HYB5116160 HYB3116160 HYB5118160 HYB3118160 SIEMENS BST h 05 90 SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST P SIEMENS BST h 05 60 SIEMENS BST h 05 110 SIEMENS BST l 45 90 SIEMENS BST SIEMENS BST G 03 60 SIEMENS BST f 05 90
SIEMENS BST P 45 115

Abstract:
Text: Semiconductor Group 9 SIEMENS AC Characteristics HYB5116(8)165BSJ-50/-60 HYB3116(8)165BS J/ BST (L)-50 , 11 SIEMENS HYB5116(8)165BSJ-50/-60 HYB3116(8)165BS J/ BST (L)-50/-60 1M x 16 - EDO DRAM " H , )165BSJ-50/-60 HYB3116(8)165BS J/ BST (L)-50/-60 1M x 16 - EDO DRAM Semiconductor Group 14 SIEMENS , SIEMENS HYB5116(8)165BSJ-50/-60 HYB3116(8)165BS J/ BST (L)-50/-60 1M X 16 - EDO DRAM RÀ5 ÜÜÄ5 LÜÄ5 , Semiconductor Group 16 SIEMENS HYB5116(8)165BSJ-50/-60 HYB3116(8)165BS J/ BST (L)-50/-60 1M x 16 - EDO


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PDF 16-Bit HYB5116165BSJ-50/-60 HYB3116165BSJ/ HYB3118165BS P-SOJ-42 P-TSOPI1-50/44 400mil) SIEMENS BST P 45 115 SIEMENS BST 68 SIEMENS BST P SIEMENS BST t SIEMENS BST SIEMENS BST f 04 SIEMENS BST g 02 60 SJ50 SIEMENS BST H 05 - 110 SIEMENS BST N 35
BST50

Abstract:
Text: 400 mil HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X 16 EDO-DRAM SIEMENS The , HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X 16 EDO-DRAM SIEMENS Pin Names and , 5118165BSJ HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X 16 EDO-DRAM SIEMENS Absolute , ^C C 6 2, 4 HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X 16 EDO-DRAM SIEMENS , 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X 16 EDO-DRAM SIEMENS AC Characteristics (cont’d


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PDF 16-Bit 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 HYB5118165 HYB3118165 P-TSOPII-50/44-1 GPX05958 BST50 SIEMENS BST 68 3118165 SIEMENS BST Q
SIEMENS BST

Abstract:
Text: Semiconductor Group 1 1 1998-10-01 SIEMENS HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X , ) Semiconductor Group 12 1998-10-01 SIEMENS HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X , Semiconductor Group 14 1998-10-01 SIEMENS HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X , SIEMENS 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) Advanced Information · 1 048 576 , ns ns ns ns HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1024 cycles /16 ms · Read


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PDF 16-Bit HYB5118165 HYB3118165 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 SIEMENS BST BST50 SIEMENS BSt L 45 100 SIEMENS BST P SIEMENS BST L siemens BST H 04 40 SIEMENS BST H SIEMENS BST 10 20 Q1107 code marking rah
Not Available

Abstract:
Text: SIEMENS BLUE LINE* 5 mm ( T i % } LED LB 5410 Vorläufige Daten / Preliminary Data , &7Oö LB 5410 SIEMENS Grenzwerts Maximum Ratifies Bezeichnung p«r«m#ter Sy¡mbol Syrnbál , « 'a lp p température rso f# D j cr la Bst ! o n Forward cut’ ent [ 1h m # W *c , - Semico""ductor örouo K ,m 33 > [*» KjW i LB 5410 SIEMENS Kennwerte ( - 2s , » ^ íÍ4 (typ.) ( \ ì Mz h ti ico"" ductor î-sr^uo 31 50 pF SIEMENS


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PDF 4C33S S410-GOdiation
SIEMENS BST 68

Abstract:
Text: bST ■SIEMENS BFP 193W Electrical Characteristics at TA = 25°C, unless otherwise specified , SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to , 1998-11-01 SIEMENS BFP193W Electrical Characteristics at r A = 25°C, unless otherwise specified , ma ■SIEMENS BFP193W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax , behalf of SIEMENS Small Signal Semiconductors by. Institut fur Mobil-und Satellitenfunktechnik (IMST) Â


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PDF 900MHz Q62702-F1577 OT-343 H35b05 BFP193W fl53SbOS SIEMENS BST 68 SIEMENS BST 68 L
SIEMENS BST

Abstract:
Text:  SIEMENS INFORMATION NOTE 16M - Bit DYNAMIC MEMORIES (Fourth Generation) General Information , FRM SIEMENS ISIDORA M This information note is mlended lo provide lechnical information on the SIEMENS fourth genera tion léM-btt DYNAMIC ACCESS MEMORIES. GENERAL INFORMATION Tftfr SIEMENS fourth g , developed by IBM and SIEMENS , as well as advanced circuit techniques to provide wide operation margins , actual product speclrum: . TYPE SIEMENS NUtitMr SpWd Sorts Susf Pattile TV PS Srtd Wifllh Destdpiicrt


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PDF 1NF016M9 SIEMENS BST power supply luna siemens power supply luna 2 siemens SIEMENS BST h 05 60 7405 power regulator 2U53 LM 7405 SIEMENS BST N 61 SIEMENS 1FT SIEMENS BST h 35
SIEMENS BST

Abstract:
Text: Semiconductor Group Page 7 0 10 20 30 V 50 - ^DS Pages 14.07.1998 ■I fl235b05 □llci7cm bST ■SIEMENS ,  SIEMENS HITFET®BTS 949 Smart Lowside Power Switch Features • Logic Level Input • Input , *i7ññ 35b SIEMENS BTS 949 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter , vertical without blown air. Semiconductor Group Page 2 14.07.1998 ■Ö235b05 Dilsal S12 I SIEMENS , QUITTO T04 ■14.07.1998 SIEMENS BTS 949 Electrical Characteristics Parameter at Tj=25°C, unless


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PDF 235LGS SIEMENS BST SIEMENS BST h 05 90 smd KJD bst eks 1000 DIODE SMD t04 SIEMENS BST h 05 60 SIEMENS "bst e" Q67060-S6703-A2 MZ8.2T5 Zener Diode kn. smd fet
0D4T

Abstract:
Text: ] > A235bGS 004^370 bST « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF B IO- - 0 *5V J l O k f i , bOE ] ) flE3SbDS DD4T371 274 M S I E S SIEMENS AKTIENGESELLSCHAF SIEM ENS Nonvolatile , SIEMENS SIEMENS AKTIENGESELLSCHAF-In conjunction with an I2C bus system, the memory , SIEMENS S D A2516-2 SIEM EN S AKTIENGESELLSCHAF-Mem ory Reprogramming The , bDE D flS3SbDS 004^374 TÖ3 « S I E G SDA 2516-2 SIEMENS SIEMENS AK TIENGESELLSCHAF U E


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PDF DD4T371 0D4T SIEMENS BSt L 45 100
2006 - BOSCH ECU microcontroller

Abstract:
Text: , Special Devices Inc. and TRW Automotive) and the BST group (Bosch, Continental Temic and Siemens VDO , Safe-by-Wire PlusTM solutions AU6102, UJA6203 and UJA6402 Connectivity to ensure occupant safety The Safe-by-Wire Plus consortium has defined a global networking standard for automotive occupant safety systems that merges the best features from existing Safe-by-Wire and BST developments , also includes some of the concepts from the work conducted by the BST group. The new specification is


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PDF AU6102, UJA6203 UJA6402 BOSCH ECU microcontroller siemens ecu VDO ecu Bosch ICs siemens ecu airbag crash sensor temic ecu bosch continental bosch ecu siemens automotive ECU Safe-by-Wire temic ecu
1996 - Q67100-Q1164

Abstract:
Text: HYB 3116160BSJ/ BST (L)-50/-60/-70 HYB 3118160BSJ/ BST (L)-50/-60/-70 1M x 16-Bit Dynamic RAM (1k , dissipation max. 720 active mW ( HYB 3118160BSJ/ BST -50) max. 648 active mW ( HYB 3118160BSJ/ BST -60) max. 576 active mW ( HYB 3118160BSJ/ BST -70) max. 360 active mW ( HYB 3116160BSJ/ BST -50) max. 324 active mW ( HYB 3116160BSJ/ BST -60) max. 288 active mW ( HYB 3116160BSJ/ BST -70) 7.2 mW standby (LV-TTL , 3116(8)160BSJ/ BST (L)-50/-60/-70 3.3V 1M x 16-DRAM The HYB 3116(8)160BSJ/ BST is a 16 MBit dynamic


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PDF 3116160BSJ/BST 3118160BSJ/BST 16-Bit 3118160BSJ/BST-50) 3118160BSJ/BST-60) 160BSJ/BST 16-DRAM GPJ05853 P-SOJ-42 Q67100-Q1164 BST60 SIEMENS BST f 05 90 SIEMENS BST H 05 - 110
1998 - SPT0305

Abstract:
Text: 1M × 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 Advanced Information · 1 048 576 words by 16-bit organization · 0 to 70 °C , 1998-10-01 HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M × 16 EDO-DRAM The HYB 5(3)118165 are , 1998-10-01 HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M × 16 EDO-DRAM Pin Names and , A8 A7 A6 A5 A4 VSS SPP03457 3 1998-10-01 HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ


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PDF 16-Bit 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 HYB5118165 HYB3118165 P-TSOPII-50/44-1 GPX05958 SPT0305 BST50 SMD MARKING CODE RAC 5118165BSJ 5118165BSJ-60 HYB3118165 HYB5118165
BT 816 triac

Abstract:
Text: ) . Thyristoren ( Siemens , BRD) . Hochleistungsthyristoren (ASEA , 2 3 H asse C 2 K thi 3 [K /W ] iP) 3 1,8 16 8.3. c o* £ G E 7 U £ BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt C03 C03 C03 C03 C03 C03 D03 D03 D03 D03 , (RMS) -^TSSl / i 2d t d u /d t [V] [A] [A] [A] [A2SJ [V//IS] BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt F25 90 F25 100 F25 110 H05 40 H 05


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PDF
Not Available

Abstract:
Text: S 1 1 D S BST V66047-S1603-B200-G1 15.4.97 FS: 04/93 Page 9 SIEMENS AG , FS: 04/93 Page 1 SIEMENS AG IC-SPECIFICATION TDA 4362 X Differences to the last edition , V66047-S1603-B200-G1 D IB IC H S ATT ■15.4.97 FS: 04/93 Page 2 SIEMENS AG IC-SPECIFICAT10N , 15.4.97 FS: 04/93 Page 3 SIEMENS AG IC-SPECIFICATION TDA 4362 X Functional Description , 01210^7 bb2 ■V66047-S1603-B200-G1 15.4.97 FS: 04/93 Page SIEMENS AG 4


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PDF V66047-S1603-B200-G1
uras 14 manual

Abstract:
Text: SIEMENS Memories for Graphics Systems 16M Synchronous Graphics RAM SGRAM HYB39S16320TQ , using the software system FrameMaker®. Published by Siemens AG, Bereich Halbleiter , contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide , information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We


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PDF HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 HYB39S16320TQ-6/-7/-8 HYB39S16320TQ-61 TQFP-100 20x14mm2, MS-026 uras 14 manual
SIEMENS BST

Abstract:
Text: ara 2A V and 0.4 V. 7 SIEMENS Table 3: AC CHARACTERISTICS MVS 511016OBSJ/ BST 1M x 16 DRAW 1k ,  SIEMENS INFORMATION NOTE Fourth Generation 16Nt - DRAMs Characterisation Data (5V products) SIEMENS 2 SIEMENS This intormatiQn notq is int&ndad to provide technical in!ormaticn on the SIEMENS , (1k, £k or 4k refresh), 'T he SIEMENS 15M - F)RAMs ara available in the follnwing retresh , ADVANTEST 5361 dedicai ed memory tesi system. 3 SIEMENS Ope ration Cun^nt ICC 1 vcr&ue Cycic Time


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1997 - BTS 640S2 S

Abstract:
Text: . 23 Siemens Aktiengesellschaft 3 Preface Sense Highside Switch in Smart Power Technology takes over Fuse Function Dr. A. Graf, Siemens AG, HL LH TM 2, D-81617 Munich, Tel. +49-89/4144-2805 A. Koroncal, Siemens AG, EZM VI 32, A-9500 Villach, Tel. +43-4242/305-359 P. Sommer, Siemens AG, HL LH PM 2, D-81617 Munich, Tel. +49-89/4144-4268 Dr. J. Tihanyi, Siemens AG, HL LH PE IC, D , ://www.siemens.de/Semiconductor/products/36/36.htm Siemens Aktiengesellschaft 4 Introduction In


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PDF 640S2 BTS 640S2 S D7032 426L1 siemens functional profet SIEMENS SCR BST SIEMENS BST mercedes D-70322 CF 4242 A-9500
SIEMENS BST

Abstract:
Text: 818 ■I fi235b05 0087113 bST ■This Material Copyrighted By Its Respective Manufacturer SIEMENS ,  SIEMENS 4M x 16-Bit Dynamic RAM HYB 3164165AT(L) -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version , Respective Manufacturer SIEMENS HYB 3164(5/6)1 65AT(L)-40/t50/-60 4M X 16 EDO-DRAM This device is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated in SIEMENS /IBM/TOSHIBAS's most , SIEMENS HYB 3164(5/6)1 65AT(L)-40/t50/-60 4M X 16 EDO-DRAM Pin Configuration (top view) P-TSOPII


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PDF 16-Bit 3164165AT 3165165AT 3166165AT fiE3Sb05 A712S SIEMENS BST SIEMENS BST P smd 42t siemens 230 96 MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST N 35 HPC16 SIEMENS BST g 02 60
inductor neosid

Abstract:
Text: RSSI +V,cc SIEMENS Diagram PMB 2430 RSSI-Res ponse ôcIBSbGS ÜDST33D bST 21 , SIEMENS Narrowband FM Receiver PMB2430 Preliminary Data Bipolar 1C Features · · · · · · · , systems. Semiconductor Group 1 01.94 I 6H3SbOS 0 0 5 ^ 3 1 0 f ib l SIEMENS PMB 2430 , 2 SIEMENS Pin Configuration (top view) PMB 2430 o L ie r LI OE GND 1 2 3 4 5 C , Semiconductor Group SIEMENS Pin Definitions and Functions Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17


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PDF PMB2430 DST33D P-DSQ-28-4 fl235b05 inductor neosid CFWM 450 SIEMENS BST h 05 90 SMD CODE L01 45S15B iflimiter Neosid Inductor PMB2430 SIEMENS BST F 05 CFWM 450 e
1998 - BST60

Abstract:
Text: HYB3116160BSJ/ BST (L)-50/-60/-70 HYB3118160BSJ/ BST (L)-50/-60/-70 1M x 16-Bit Dynamic RAM (1k & , dissipation max. 720 active mW ( HYB3118160BSJ/ BST -50) max. 648 active mW ( HYB3118160BSJ/ BST -60) max. 576 active mW ( HYB3118160BSJ/ BST -70) max. 360 active mW ( HYB3116160BSJ/ BST -50) max. 324 active mW ( HYB3116160BSJ/ BST -60) max. 288 active mW ( HYB3116160BSJ/ BST -70) 7.2 mW standby (LV-TTL) 3.6 mW standby , )160BSJ/ BST (L)-50/-60/-70 3.3V 1M x 16-DRAM The HYB 3116(8)160BSJ/ BST is a 16 MBit dynamic RAM


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PDF HYB3116160BSJ/BST HYB3118160BSJ/BST 16-Bit HYB3118160BSJ/BST-50) HYB3118160BSJ/BST-60) HYB3118160BSJAAAAAAAAAAAAAAAAAAA HYB3116 160BSJ/BST 16-DRAM BST60
1997 - 5118165BSJ-60

Abstract:
Text: HYB5116165BSJ-50/-60 HYB3116165BSJ/( BST (L)-50/-60 HYB3118165BSJ/( BST (L)-50/-60 Advanced Information · 1 , -50/44 400 mil 1 2.97 HYB5116(8)165BSJ-50/-60 HYB3116(8)165BSJ/ BST (L)-50/-60 1M x 16 - EDO , Refresh Versions: Semiconductor Group 2 HYB5116(8)165BSJ-50/-60 HYB3116(8)165BSJ/ BST (L)-50/-60 , A9 A8 A7 A6 A5 A4 Vss HYB5116(8)165BSJ-50/-60 HYB3116(8)165BSJ/ BST (L)-50/-60 1M x 16 - , (8)165BSJ-50/-60 HYB3116(8)165BSJ/ BST (L)-50/-60 1M x 16 - EDO DRAM I/O16 I/O1 I/O2 WE


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PDF 16-Bit HYB5116165BSJ-50/-60 HYB3116165BSJ/ HYB3118165BSJ/ HYB5116165 HYB3116165 HYB5118165 HYB3118165 5118165BSJ-60 HYB3116165BSJ HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP
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