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HW-IDM-L35 Texas Instruments RDK IDM L35 Hardware Package Rev B
619088-1 TE Connectivity Ltd Switching Coax; 0-619088-1 ONLY FOR SIEMENS ( Tyco Electronics )
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SIEMENS BST l35 Datasheets Context Search

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thyristor AEG t 10 n 600

Abstract: Siemens diode Ssi L28 siemens BSt P45 SIEMENS BST n61 SIEMENS BST siemens ssi k38 diode ssi L28 SIEMENS BST L35 SIEMENS BST p49 thyristor aeg
Text: Studs BSt F35 BSt H35 BSt L35 BSt N35 BSt P35 BSt P36 T 60 N T 85 N T 115 N Discs BSt H61y BSt K45 BSt , from the former Siemens programme, however, in future with new type designation: Si emensDesignation eupecDesignation SiemensDesignation eupecDesignation Phase control thyristors BSt R68L BSt T65 BSt T66 BSt T68H BSt T68L BSt T68N BSt T68S BSt U68H BSt U68S BSt U78S BSt BSt BSt BSt BSt P49 P49L Q63 R63H , Fast thyristors Asymm. thyristors BSt R60 BSt R62 A 931 S A 901 S Fast rectifier diodes


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BT 816 triac

Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Text: ) . Thyristoren ( Siemens , BRD) . Hochleistungsthyristoren (ASEA , 2 3 H asse C 2 K thi 3 [K /W ] iP) 3 1,8 16 8.3. c o* £ G E 7 U £ BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt C03 C03 C03 C03 C03 C03 D03 D03 D03 D03 , (RMS) -^TSSl / i 2d t d u /d t [V] [A] [A] [A] [A2SJ [V//IS] BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt BSt F25 90 F25 100 F25 110 H05 40 H 05


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SIEMENS BST

Abstract: SIEMENS BST h 05 90 SIEMENS BST h 05 110 SIEMENS BST h 35 SIEMENS BST h 05 60 SIEMENS BST L 35 90 SIEMENS BST 68 SIEMENS BST N 45 b 110 SIEMENS BST H 05 - 110 SIEMENS BST h 05 20
Text: SIEMENS 1M X 16-Bit Dynamic RAM (1 k & 4k-Refresh) HYB 3116160BSJ/ BST (L)-50/-60/-70 HYB 3118160BSJ , SIEMENS HYB 3116(8)160BSJ/ BST (L)-50/-60/-70 3.3V 1M X 16-DRAM I / O l 1 / 0 2 ··· 1 / 0 1 6 Block Diagram for HYB 3116160BSJ Semiconductor Group 621 SIEMENS HYB 3116(8)160BSJ/ BST (L)-50/-60 , ) 623 SIEMENS HYB 3116(8)160BSJ/ BST (L)-5Q/-6Q/-70 3.3V1MX 16-DRAM DC Characteristics (values , Self Refresh. Semiconductor Group 628 SIEMENS HYB 3116(8)160BSJ/ BST (L)-50/-60/-70 3.3V 1M


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PDF 16-Bit 3116160BSJ/BST 3118160BSJ/BST 3118160BSJ/BST-50) 3118160BSJ/BST-60) 3118160BSJ/BST-70) 3116160BSJ/BST-50) 3116160BSJ/BST-60) 160BSJ/BST SIEMENS BST SIEMENS BST h 05 90 SIEMENS BST h 05 110 SIEMENS BST h 35 SIEMENS BST h 05 60 SIEMENS BST L 35 90 SIEMENS BST 68 SIEMENS BST N 45 b 110 SIEMENS BST H 05 - 110 SIEMENS BST h 05 20
SIEMENS BST

Abstract: SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60
Text: SIEMENS 1M X 16-Bit EDO- Dynamic RAM (1 k & 4k-Refresh) HYB 3116165BSJ/ BST (L)-50/-60/-70 HYB , HYB 3116(8)165BSJ/ BST (L)-50/-60/-70 3.3V 1M X 16 EDO-DRAM SIEMENS The HYB 3116(8)165BSJ/ BST is , ÖE3SL0S G D ñbW 2T5 HYB 3116(8)165BSJ/ BST (L)-50/-60/-70 3.3V 1M X 16 EDO-DRAM SIEMENS Pin , HYB 3116(8)165BSJ/ BST (L)-50/-60/-70 3.3V 1M X 16 EDO-DRAM SIEMENS Block Diagram for HYB 3116165BSJ Semiconductor Group 646 ÔEBSbQS QOflbRm =153 SIEMENS HYB 3116(8)165BSJ/ BST (L


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PDF 16-Bit 3116165BSJ/BST 3118165BSJ/BST 3118165BSJ/BST-50) 3118165BSJ/BST-60) 165BSJ/BST SIEMENS BST SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60
SIEMENS BST

Abstract: SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60
Text: SIEMENS 1M X 16-Bit Dynamic RAM (1 k & 4k-Refresh) HYB 3116160BSJ/ BST (L)-50/-60/-70 HYB , /-60/-70 3.3V 1M X 16-DRAM SIEMENS The HYB 3116(8)160BSJ/ BST is a 16 MBit dynamic RAM organized , )160BSJ/ BST (L)-50/-60/-70 3.3V 1M X 16-DRAM SIEMENS Pin Configuration (top view) P-SOJ-42 (400 mil , 620 Ö235b05 GGfibTlS ñtil SIEMENS HYB 3116(8)160BSJ/ BST (L)-50/-60/-70 3.3V1M X 16 , – fl235fc,DS □Oflti'il? b34 HYB 3116(8)160BSJ/ BST (L)-50/-60/-70 3.3V1M X 16-DRAM SIEMENS Absolute


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PDF 16-Bit 3116160BSJ/BST 3118160BSJ/BST 3118160BSJ/BST-50) 3118160BSJ/BST-60) 3118160BSAS 160BSJ/BST 16-DRAM flS3Sb05 SIEMENS BST SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60
SIEMENS BST h 05 90

Abstract: SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST P SIEMENS BST h 05 60 SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 SIEMENS BST G 03 60 SIEMENS BST n 35 80
Text: Group 7 SIEMENS HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/ BST (L)-50/-60 1M X 16 - DRAM AC , SIEMENS AC Characteristics HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/ BST (L)-50/-60 1M X 16 - DRAM (co , ) Semiconductor Group 13 SIEMENS HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/ BST (L)-50/-60 1M x 16 - DRAM Semiconductor Group 14 SIEMENS HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/ BST (L)-50/-60 1M x 16 - DRAM Semiconductor Group 15 SIEMENS HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/ BST (L)-50/-60 1M X 16 - DRAM


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PDF 16-Bit HYB5116160BSJ-50/-60 HYB3116160BSJ/BST HYB3118160BSJ/BST HYB5116160 HYB3116160 HYB5118160 HYB3118160 SIEMENS BST h 05 90 SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST P SIEMENS BST h 05 60 SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 SIEMENS BST G 03 60 SIEMENS BST n 35 80
SIEMENS BST 68

Abstract: SIEMENS BST P 45 115 SIEMENS BST P SIEMENS BST t SIEMENS BST f 04 SIEMENS BST SIEMENS BST G 03 60 SIEMENS BST F 05 SIEMENS BST Q SIEMENS BST g 02 60
Text: Semiconductor Group 9 SIEMENS AC Characteristics HYB5116(8)165BSJ-50/-60 HYB3116(8)165BS J/ BST (L)-50 , 11 SIEMENS HYB5116(8)165BSJ-50/-60 HYB3116(8)165BS J/ BST (L)-50/-60 1M x 16 - EDO DRAM " H , )165BSJ-50/-60 HYB3116(8)165BS J/ BST (L)-50/-60 1M x 16 - EDO DRAM Semiconductor Group 14 SIEMENS , SIEMENS HYB5116(8)165BSJ-50/-60 HYB3116(8)165BS J/ BST (L)-50/-60 1M X 16 - EDO DRAM RÀ5 ÜÜÄ5 LÜÄ5 , Semiconductor Group 16 SIEMENS HYB5116(8)165BSJ-50/-60 HYB3116(8)165BS J/ BST (L)-50/-60 1M x 16 - EDO


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PDF 16-Bit HYB5116165BSJ-50/-60 HYB3116165BSJ/ HYB3118165BS P-SOJ-42 P-TSOPI1-50/44 400mil) SIEMENS BST 68 SIEMENS BST P 45 115 SIEMENS BST P SIEMENS BST t SIEMENS BST f 04 SIEMENS BST SIEMENS BST G 03 60 SIEMENS BST F 05 SIEMENS BST Q SIEMENS BST g 02 60
SIEMENS BST 68

Abstract: BST50 3118165 SIEMENS BST Q
Text: 400 mil HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X 16 EDO-DRAM SIEMENS The , HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X 16 EDO-DRAM SIEMENS Pin Names and , 5118165BSJ HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X 16 EDO-DRAM SIEMENS Absolute , ^C C 6 2, 4 HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X 16 EDO-DRAM SIEMENS , 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X 16 EDO-DRAM SIEMENS AC Characteristics (cont’d


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PDF 16-Bit 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 HYB5118165 HYB3118165 P-TSOPII-50/44-1 GPX05958 SIEMENS BST 68 BST50 3118165 SIEMENS BST Q
SIEMENS BST

Abstract: SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST L SIEMENS BST P siemens BST H 04 40 SIEMENS BST H Q1107 SIEMENS BST 10 20
Text: Semiconductor Group 1 1 1998-10-01 SIEMENS HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X , ) Semiconductor Group 12 1998-10-01 SIEMENS HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X , Semiconductor Group 14 1998-10-01 SIEMENS HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M X , SIEMENS 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) Advanced Information · 1 048 576 , ns ns ns ns HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1024 cycles /16 ms · Read


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PDF 16-Bit HYB5118165 HYB3118165 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 SIEMENS BST SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST L SIEMENS BST P siemens BST H 04 40 SIEMENS BST H Q1107 SIEMENS BST 10 20
Not Available

Abstract: No abstract text available
Text: SIEMENS BLUE LINE* 5 mm ( T i % } LED LB 5410 Vorläufige Daten / Preliminary Data , &7Oö LB 5410 SIEMENS Grenzwerts Maximum Ratifies Bezeichnung p«r«m#ter Sy¡mbol Syrnbál , « 'a lp p température rso f# D j cr la Bst ! o n Forward cut’ ent [ 1h m # W *c , - Semico""ductor örouo K ,m 33 > [*» KjW i LB 5410 SIEMENS Kennwerte ( - 2s , » ^ íÍ4 (typ.) ( \ ì Mz h ti ico"" ductor î-sr^uo 31 50 pF SIEMENS


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PDF 4C33S S410-GOdiation
SIEMENS BST 68

Abstract: SIEMENS BST 68 L
Text: bST ■SIEMENS BFP 193W Electrical Characteristics at TA = 25°C, unless otherwise specified , SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to , 1998-11-01 SIEMENS BFP193W Electrical Characteristics at r A = 25°C, unless otherwise specified , ma ■SIEMENS BFP193W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax , behalf of SIEMENS Small Signal Semiconductors by. Institut fur Mobil-und Satellitenfunktechnik (IMST) Â


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PDF 900MHz Q62702-F1577 OT-343 H35b05 BFP193W fl53SbOS SIEMENS BST 68 SIEMENS BST 68 L
SIEMENS BST

Abstract: power supply luna siemens power supply luna 2 siemens SIEMENS BST h 05 60 7405 power regulator LM 7405 2U53 SIEMENS 1FT SIEMENS BST N 61 SIEMENS BST h 35
Text:  SIEMENS INFORMATION NOTE 16M - Bit DYNAMIC MEMORIES (Fourth Generation) General Information , FRM SIEMENS ISIDORA M This information note is mlended lo provide lechnical information on the SIEMENS fourth genera tion léM-btt DYNAMIC ACCESS MEMORIES. GENERAL INFORMATION Tftfr SIEMENS fourth g , developed by IBM and SIEMENS , as well as advanced circuit techniques to provide wide operation margins , actual product speclrum: . TYPE SIEMENS NUtitMr SpWd Sorts Susf Pattile TV PS Srtd Wifllh Destdpiicrt


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PDF 1NF016M9 SIEMENS BST power supply luna siemens power supply luna 2 siemens SIEMENS BST h 05 60 7405 power regulator LM 7405 2U53 SIEMENS 1FT SIEMENS BST N 61 SIEMENS BST h 35
SIEMENS BST

Abstract: SIEMENS BST h 05 90 smd KJD bst eks 1000 SIEMENS BST h 05 60 DIODE SMD t04 Q67060-S6703-A4 Q67060-S6703-A2 GPT05904 SIEMENS "bst e"
Text: Semiconductor Group Page 7 0 10 20 30 V 50 - ^DS Pages 14.07.1998 ■I fl235b05 □llci7cm bST ■SIEMENS ,  SIEMENS HITFET®BTS 949 Smart Lowside Power Switch Features • Logic Level Input • Input , *i7ññ 35b SIEMENS BTS 949 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter , vertical without blown air. Semiconductor Group Page 2 14.07.1998 ■Ö235b05 Dilsal S12 I SIEMENS , QUITTO T04 ■14.07.1998 SIEMENS BTS 949 Electrical Characteristics Parameter at Tj=25°C, unless


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PDF 235LGS SIEMENS BST SIEMENS BST h 05 90 smd KJD bst eks 1000 SIEMENS BST h 05 60 DIODE SMD t04 Q67060-S6703-A4 Q67060-S6703-A2 GPT05904 SIEMENS "bst e"
SIEMENS BSt L 45 100

Abstract: 0D4T
Text: ] > A235bGS 004^370 bST « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF B IO- - 0 *5V J l O k f i , bOE ] ) flE3SbDS DD4T371 274 M S I E S SIEMENS AKTIENGESELLSCHAF SIEM ENS Nonvolatile , SIEMENS SIEMENS AKTIENGESELLSCHAF-In conjunction with an I2C bus system, the memory , SIEMENS S D A2516-2 SIEM EN S AKTIENGESELLSCHAF-Mem ory Reprogramming The , bDE D flS3SbDS 004^374 TÖ3 « S I E G SDA 2516-2 SIEMENS SIEMENS AK TIENGESELLSCHAF U E


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PDF DD4T371 SIEMENS BSt L 45 100 0D4T
Microcontroller Family SAB 8051 Pocket Guide

Abstract: pin diagram of ic 8032 80513-P B158-H6497-X-X-7600 8032b-p Microcontroller Family SAB 8051A Pocket Guide SAB 8051a p siemens 8032 8052B-P SAB 8051 p
Text: S1E D a23Sb05 0044641 SIEMENS 515 « S I E G AKTI ENGESELLSCHAF - ¡ ^ « - 1 ^ - 0 , microcontrollers fabricated in + 5 V advanced N-channel, silicon-gate Siemens MYMOS technology, packaged in a 40 , -Bit USART Port 1 v= > ° w > l/0 Port 2 ROM - Port 3 O /0 Siemens Aktiengesellschaft 2 SIE SIEMENS D fl E35 bQ5 0044043 3bfi « S I E G SAB 8052/8032 Family , -C506 Q 67120-C505 Siemens Aktiengesellschaft 3 SIE D SIEMENS 6 2 3 5 bQ5 004 4 0 4 4 2


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PDF a23Sb05 8052B 8032B 16-bit PL-CC-44 P-DIP-40 PL-CC-44 Microcontroller Family SAB 8051 Pocket Guide pin diagram of ic 8032 80513-P B158-H6497-X-X-7600 8032b-p Microcontroller Family SAB 8051A Pocket Guide SAB 8051a p siemens 8032 8052B-P SAB 8051 p
2006 - BOSCH ECU microcontroller

Abstract: siemens ecu VDO ecu Bosch ICs siemens ecu airbag crash sensor temic ecu bosch continental bosch ecu Safe-by-Wire siemens automotive ECU temic ecu
Text: , Special Devices Inc. and TRW Automotive) and the BST group (Bosch, Continental Temic and Siemens VDO , Safe-by-Wire PlusTM solutions AU6102, UJA6203 and UJA6402 Connectivity to ensure occupant safety The Safe-by-Wire Plus consortium has defined a global networking standard for automotive occupant safety systems that merges the best features from existing Safe-by-Wire and BST developments , also includes some of the concepts from the work conducted by the BST group. The new specification is


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PDF AU6102, UJA6203 UJA6402 BOSCH ECU microcontroller siemens ecu VDO ecu Bosch ICs siemens ecu airbag crash sensor temic ecu bosch continental bosch ecu Safe-by-Wire siemens automotive ECU temic ecu
siemens 3ld 25

Abstract: TA5C HYB3116405BT
Text:  SIEMENS INFORMATION NOTE Fourth Generation 16M - DRAMs Characterisation Data (3.3 V products) 7.96 inioifiM11.DOC SIEMENS 3.3V itìM-D&Atos This information note is intended to provide Technical information on the SIEMENS fourth gyration 16M-DRAMs DYNAMIC ACCESS MEMORIES operating at 3.3 V Vcc power supply. CHARACTERISTICS OF DC & AC - PARAMETERS The SIEMENS 16M - DRAM devices are , en addressing and refresh organsation (Ik, 2k or4k refresh), I he SIEMENS 1SM DRAMs are available in


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PDF inioifiM11 16M-DRAMs siemens 3ld 25 TA5C HYB3116405BT
2010 - 1492-EAJ35

Abstract: 1492-H5 1492-L3 1492-WFB4 ALLEN-BRADLEY 1492-EAJ35 1492-H4 700-HN205 ALLEN-BRADLEy 1492-JG4 1492-FPK2 1492-H6
Text: -JG10, 1492-JG16, 1492-JG35, 1492-JG50, 1492-JG70, 1492-JG120, 1492-L16, 1492-L16D, 1492- L35 , 1492 , -JG10, 1492-JG16, 1492-JG35, 1492-JG50, 1492-JG70, 1492-L6, 1492-L6T, 1492-L10, 1492-L16, 1492-L16D, 1492- L35 , -L10, 1492-L16, 1492-L16D, 1492- L35 , 1492-LG6, 1492-LG6T, 1492-LG10, 1492-LG16, 1492-LG35 1492 , , Telemecanique, Wago, Wieland 1492-MCS7X10 Some terminal blocks from Siemens Marking System Description , from Siemens 1492-MCS6X10 Some terminal blocks from Siemens 1492-MCS7X7 Some terminal


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PDF 1492-PLTKIT Publication1492-UM006C-EN-P Publication1492-UM006B-EN-P 1492-EAJ35 1492-H5 1492-L3 1492-WFB4 ALLEN-BRADLEY 1492-EAJ35 1492-H4 700-HN205 ALLEN-BRADLEy 1492-JG4 1492-FPK2 1492-H6
1996 - Q67100-Q1164

Abstract: SIEMENS BST H 05 - 110 SIEMENS BST f 05 90 BST60
Text: HYB 3116160BSJ/ BST (L)-50/-60/-70 HYB 3118160BSJ/ BST (L)-50/-60/-70 1M x 16-Bit Dynamic RAM (1k , dissipation max. 720 active mW ( HYB 3118160BSJ/ BST -50) max. 648 active mW ( HYB 3118160BSJ/ BST -60) max. 576 active mW ( HYB 3118160BSJ/ BST -70) max. 360 active mW ( HYB 3116160BSJ/ BST -50) max. 324 active mW ( HYB 3116160BSJ/ BST -60) max. 288 active mW ( HYB 3116160BSJ/ BST -70) 7.2 mW standby (LV-TTL , 3116(8)160BSJ/ BST (L)-50/-60/-70 3.3V 1M x 16-DRAM The HYB 3116(8)160BSJ/ BST is a 16 MBit dynamic


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PDF 3116160BSJ/BST 3118160BSJ/BST 16-Bit 3118160BSJ/BST-50) 3118160BSJ/BST-60) 160BSJ/BST 16-DRAM GPJ05853 P-SOJ-42 Q67100-Q1164 SIEMENS BST H 05 - 110 SIEMENS BST f 05 90 BST60
1998 - SPT0305

Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
Text: 1M × 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 Advanced Information · 1 048 576 words by 16-bit organization · 0 to 70 °C , 1998-10-01 HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M × 16 EDO-DRAM The HYB 5(3)118165 are , 1998-10-01 HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ/ BST -50/-60 1M × 16 EDO-DRAM Pin Names and , A8 A7 A6 A5 A4 VSS SPP03457 3 1998-10-01 HYB 5118165BSJ/ BST -50/-60 HYB 3118165BSJ


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PDF 16-Bit 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 HYB5118165 HYB3118165 P-TSOPII-50/44-1 GPX05958 SPT0305 BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
SIEMENS B 58 371

Abstract: 8032A-P siemens b 58 371 ba intel 80 8032AP intel 80c52 SAB 8051 p 8052A movx interfacing of RAM and ROM with 8085
Text: 4?E D 053SbDS 002^015 b « S I E G SIEM EN S SIEMENS AKT IEN6ESELLSCHAF 8-Bit Single , [ 1B XTAH [ 19 20 U U U I 3 nJU TTE T s a n s 4?E SIEMENS D fl235b05 OO , , silicon gate Siemens MYMOS technology. Both extended temperature versions are available in a 40 , memory (P-DIP-40) with mask-programmable ROM (PL-CC-44) for external memory (PL-CC-44) Siemens Aktiengesellschaft 352 fl23Sb05 GDETÖl? T H S I E G SAB 8052A/8032A Ext. Temp. SIEMENS AK TIENGESELLS


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PDF 053SbDS 052A-T40/85 052A-T40/100 032A-T40/85 032A-T40/100 052A/8032A 16-bit PLCC44 23SbDS SIEMENS B 58 371 8032A-P siemens b 58 371 ba intel 80 8032AP intel 80c52 SAB 8051 p 8052A movx interfacing of RAM and ROM with 8085
Not Available

Abstract: No abstract text available
Text: S 1 1 D S BST V66047-S1603-B200-G1 15.4.97 FS: 04/93 Page 9 SIEMENS AG , FS: 04/93 Page 1 SIEMENS AG IC-SPECIFICATION TDA 4362 X Differences to the last edition , V66047-S1603-B200-G1 D IB IC H S ATT ■15.4.97 FS: 04/93 Page 2 SIEMENS AG IC-SPECIFICAT10N , 15.4.97 FS: 04/93 Page 3 SIEMENS AG IC-SPECIFICATION TDA 4362 X Functional Description , 01210^7 bb2 ■V66047-S1603-B200-G1 15.4.97 FS: 04/93 Page SIEMENS AG 4


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PDF V66047-S1603-B200-G1
uras 14 manual

Abstract: No abstract text available
Text: SIEMENS Memories for Graphics Systems 16M Synchronous Graphics RAM SGRAM HYB39S16320TQ , using the software system FrameMaker®. Published by Siemens AG, Bereich Halbleiter , contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide , information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We


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PDF HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 HYB39S16320TQ-6/-7/-8 HYB39S16320TQ-61 TQFP-100 20x14mm2, MS-026 uras 14 manual
SIEMENS BST

Abstract: vhca TAE 1102 SIEMENS BST N 35 SIEMENS BST h 05 90 1R72 SIEMENS BST F 05 1CC3
Text: ara 2A V and 0.4 V. 7 SIEMENS Table 3: AC CHARACTERISTICS MVS 511016OBSJ/ BST 1M x 16 DRAW 1k ,  SIEMENS INFORMATION NOTE Fourth Generation 16Nt - DRAMs Characterisation Data (5V products) SIEMENS 2 SIEMENS This intormatiQn notq is int&ndad to provide technical in!ormaticn on the SIEMENS , (1k, £k or 4k refresh), 'T he SIEMENS 15M - F)RAMs ara available in the follnwing retresh , ADVANTEST 5361 dedicai ed memory tesi system. 3 SIEMENS Ope ration Cun^nt ICC 1 vcr&ue Cycic Time


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PDF
1997 - BTS 640S2 S

Abstract: D7032 426L1 siemens functional profet SIEMENS SCR BST SIEMENS BST h 05 60 D-70322 A-9500 siemens functional description profet SIEMENS BST
Text: . 23 Siemens Aktiengesellschaft 3 Preface Sense Highside Switch in Smart Power Technology takes over Fuse Function Dr. A. Graf, Siemens AG, HL LH TM 2, D-81617 Munich, Tel. +49-89/4144-2805 A. Koroncal, Siemens AG, EZM VI 32, A-9500 Villach, Tel. +43-4242/305-359 P. Sommer, Siemens AG, HL LH PM 2, D-81617 Munich, Tel. +49-89/4144-4268 Dr. J. Tihanyi, Siemens AG, HL LH PE IC, D , ://www.siemens.de/Semiconductor/products/36/36.htm Siemens Aktiengesellschaft 4 Introduction In


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PDF 640S2 BTS 640S2 S D7032 426L1 siemens functional profet SIEMENS SCR BST SIEMENS BST h 05 60 D-70322 A-9500 siemens functional description profet SIEMENS BST
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