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Vishay Siliconix
SI5475DC-T1 SI5475DC-T1 ECAD Model
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America II Electronics SI5475DC-T1 7,110 - - - - - Buy Now

SI5475DC-T1 datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
SI5475DC-T1 SI5475DC-T1 ECAD Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF
SI5475DC-T1 SI5475DC-T1 ECAD Model Vishay Intertechnology P-Channel 12-V (D-S) MOSFET Original PDF
SI5475DC-T1-E3 SI5475DC-T1-E3 ECAD Model Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 5.5A 1206-8 Original PDF
SI5475DC-T1-GE3 SI5475DC-T1-GE3 ECAD Model Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 5.5A 1206-8 Original PDF

SI5475DC-T1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
74119

Abstract: Si5475BDC Si5475BDC-T1-E3 Si5475DC Si5475DC-T1
Text: Specification Comparison Vishay Siliconix Si5475BDC vs. Si5475DC Description: P-Channel, 12 V (D-S) MOSFET Package: 1206-8 ChipFET® Pin Out: Identical Part Number Replacements: Si5475BDC-T1-E3 Replaces Si5475DC-T1-E3 Si5475BDC-T1 Replaces Si5475DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si5475BDC Si5475DC Drain-Source Voltage VDS - 12 - 12 Gate-Source Voltage VGS ±8 ±8 Continuous Drain Current TA = 25 °C TA =


Original
PDF Si5475BDC Si5475DC Si5475BDC-T1-E3 Si5475DC-T1-E3 Si5475BDC-T1 Si5475DC-T1 74119
2002 - Si5475DC

Abstract: Si5475DC-T1
Text: Si5475DC Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () ID (A) 0.031 @ VGS = -4.5 V -7.6 -12 0.041 @ VGS = -2.5 V -6.6 0.054 @ VGS = -1.8 V -5.8 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BF XX Lot Traceability and Date Code Part # Code Bottom View D P-Channel MOSFET Ordering Information: Si5475DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol


Original
PDF Si5475DC Si5475DC-T1 S-21251--Rev. 05-Aug-02
2008 - Si5475DC

Abstract: Si5475DC-T1 S-21251
Text: Si5475DC Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () ID (A) 0.031 @ VGS = -4.5 V -7.6 -12 0.041 @ VGS = -2.5 V -6.6 0.054 @ VGS = -1.8 V -5.8 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BF XX Lot Traceability and Date Code Part # Code Bottom View D P-Channel MOSFET Ordering Information: Si5475DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol


Original
PDF Si5475DC Si5475DC-T1 18-Jul-08 S-21251
2007 - Si5475DC

Abstract: Si5475DC-T1
Text: Si5475DC Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () ID (A) 0.031 @ VGS = -4.5 V -7.6 -12 0.041 @ VGS = -2.5 V -6.6 0.054 @ VGS = -1.8 V -5.8 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BF XX Lot Traceability and Date Code Part # Code Bottom View D P-Channel MOSFET Ordering Information: Si5475DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol


Original
PDF Si5475DC Si5475DC-T1 08-Apr-05
2012 - Not Available

Abstract: No abstract text available
Text: Traceability and Date Code Part # Code G Ordering Information: Si5475DC-T1-E3 (Lead (Pb)-free) Si5475DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


Original
PDF Si5475DC 2002/95/EC Si5475DC-T1-E3 Si5475DC-T1-GE3 11-Mar-11
2012 - AN811

Abstract: S0915
Text: Traceability and Date Code Part # Code G Ordering Information: Si5475DC-T1-E3 (Lead (Pb)-free) Si5475DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


Original
PDF Si5475DC 2002/95/EC Si5475DC-T1-E3 Si5475DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 AN811 S0915
Not Available

Abstract: No abstract text available
Text: Date Code G mm 1.8 Part # Code Bottom View D Ordering Information: Si5475DC-T1-E3 (Lead (Pb)-free) Si5475DC-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE


Original
PDF Si5475DC 2002/95/EC Si5475DC-T1-E3 Si5475DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si5475DC

Abstract: No abstract text available
Text: mm 1.8 Part # Code Bottom View D Ordering Information: Si5475DC-T1-E3 (Lead (Pb)-free) Si5475DC-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C


Original
PDF Si5475DC 2002/95/EC Si5475DC-T1-E3 Si5475DC-T1-GE3 18-Jul-08
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