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Vishay Intertechnologies
SI4966DY-T1-E3 DUAL N CHANNEL MOSFET, 20V, SOIC, FULL REEL; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2W RoHS Compliant: Yes SI4966DY-T1-E3 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Newark element14 SI4966DY-T1-E3 0 2,500 - - - - - Buy Now
Bristol Electronics SI4966DY-T1-E3 1,666 - - - - - Buy Now
Vishay Siliconix
SI4966DY-T1-E3 MOSFET; Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ohm; ID+/-7.1A; SO-8; PD 2W; VGS+/-12V SI4966DY-T1-E3 ECAD Model
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Allied Electronics & Automation SI4966DY-T1-E3 Bulk 0 2,500 - - - - $1.05 Get Quote
Vishay Siliconix
SI4966DY SI4966DY ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics SI4966DY 105 - - - - - Buy Now
SILI
SI4966DY SI4966DY ECAD Model
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Bristol Electronics SI4966DY 31 - - - - - Buy Now
Vishay Intertechnologies
SI4966DY SI4966DY ECAD Model
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Bristol Electronics (2) SI4966DY 125 - - - - - Buy Now
SI4966DY 70 - - - - - Buy Now
element14 Asia-Pacific SI4966DY 0 1 $2.4 $1.98 $1.32 $1.09 $1.09 Buy Now
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Vishay Intertechnologies
SI4966DY-E3 SI4966DY-E3 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics SI4966DY-E3 50 - - - - - Buy Now
Vishay Siliconix
SI4966DYT1 SI4966DYT1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics SI4966DYT1 1,126 - - - - - Buy Now

SI4966DY datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
Si4966DY Si4966DY ECAD Model Toshiba Power MOSFETs Cross Reference Guide Original PDF
SI4966DY SI4966DY ECAD Model Vishay Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
Si4966DY Si4966DY ECAD Model Vishay Intertechnology Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
SI4966DY-T1 SI4966DY-T1 ECAD Model Vishay Intertechnology Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
SI4966DY-T1-E3 SI4966DY-T1-E3 ECAD Model Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 8SOIC Original PDF
SI4966DY-T1-GE3 SI4966DY-T1-GE3 ECAD Model Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 8SOIC Original PDF

SI4966DY Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - Si4966DY

Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V 20 ID (A) "6.0 D1 D1 D2 , of TEMIC Semiconductors 3-1 Si4966DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS , -54939-Rev. A, 29-Sep-97 Siliconix was formerly a division of TEMIC Semiconductors 3-2 Si4966DY Vishay , Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) SourceDrain Diode


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PDF Si4966DY Storag50 S-54939--Rev. 29-Sep-97
1997 - Si4966DY

Abstract: No abstract text available
Text: Si4966DY Dual N-Channel 2.5-V (G-S) Rated MOSFET Product Summary VDS (V) rDS(on) (W) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V 20 ID (A) "6.0 D1 D1 D2 D2 SO-8 S1 1 , Siliconix S-54939-Rev. A, 29-Sep-97 3-1 New Product Si4966DY Specifications (TJ = 25_C Unless , Product Siliconix S-54939-Rev. A, 29-Sep-97 Si4966DY Typical Characteristics (25_C Unless , Product Si4966DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode Forward


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PDF Si4966DY S-54939--Rev. 29-Sep-97
Not Available

Abstract: No abstract text available
Text: Tem ic S em iconductors 4966DY I d (A) ±7.1 ±6.0 Dual N-Channel 2.5-V (G-S) Rated MOSFET Product Summary V d s (V) 20 FDS(on) (S ) 0.025 @ VGS = 4.5 V 0.035 @ VGs = 2.5 V SO-8 s, [ T , SO IC -8 4966DY Specifications (Tj = 25 °C Unless Otherwise Noted) Parameter Static Gate , Product Siliconix S-54939-Rev. A, 29-Sep-97 T e m ic Semiconductors 4966DY Transfer , Temperature (°C) Siliconix S-54939-Rev. A, 29-Sep-97 New Product 3-91 SOIC-8 Si4966DY


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PDF 4966DY S-54939--Rev. 29-Sep-97 Si4966DY
2000 - Si4966DY

Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V 20 ID (A) "6.0 D1 D1 D2 D2 , -Sep-97 www.vishay.com S FaxBack 408-970-5600 2-1 Si4966DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS , FaxBack 408-970-5600 2-2 Document Number: 70718 S-54939-Rev. A, 29-Sep-97 Si4966DY Vishay , 150 TJ ­ Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-3 Si4966DY


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PDF Si4966DY Temperature50 S-54939--Rev. 29-Sep-97
Si4966DY

Abstract: No abstract text available
Text: Si4966DY Dual N-Channel 2.5-V (G-S) Rated MOSFET Product Summary VDS (V) rDS(on) (W) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V 20 ID (A) "6.0 D1 D1 D2 D2 SO-8 S1 1 , Siliconix S-54939-Rev. A, 29-Sep-97 3-1 New Product Si4966DY Specifications (TJ = 25_C Unless , Product Siliconix S-54939-Rev. A, 29-Sep-97 Si4966DY Typical Characteristics (25_C Unless , ) 3-3 New Product Si4966DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain


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PDF Si4966DY S-54939--Rev. 29-Sep-97
2005 - Not Available

Abstract: No abstract text available
Text: Top View Ordering Information: Si4966DY-T1 Si4966DY-T1-E3 (Lead (Pb)-Free) 8 7 6 5 D1 D1 D2 D2 G1 , Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 , -Apr-05 www.vishay.com Symbol RthJA Limit 62.5 Unit _C/W 1 Si4966DY Vishay Siliconix , . www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70718 S-50695-Rev. B, 18-Apr-05 Si4966DY , -Apr-05 www.vishay.com 3 Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain


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PDF Si4966DY Si4966DY-T1 Si4966DY-T1--E3 S-50695--Rev. 18-Apr-05
Si4966DY

Abstract: Si4966DY-T1-E3
Text: Information: Si4966DY-T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel , Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS , . Document Number: 70718 S09-0869-Rev. D, 18-May-09 www.vishay.com 1 Si4966DY Vishay Siliconix , -May-09 Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 5 V thru , Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 0.10 R DS(on) -


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PDF Si4966DY 2002/95/EC Si4966DY-T1-E3 Si4966DY-T1-GE3 18-Jul-08
2008 - Not Available

Abstract: No abstract text available
Text: : Si4966DY­T1 Si4966DY­T1­E3 (Lead (Pb)­free) ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED , Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 , _C/W 1 Si4966DY Vishay Siliconix SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED , . www.vishay.com 2 Document Number: 70718 S-52637-Rev. C, 02-Jan-06 Si4966DY Vishay Siliconix TYPICAL , Temperature (_C) Document Number: 70718 S-52637-Rev. C, 02-Jan-06 www.vishay.com 3 Si4966DY


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PDF Si4966DY 18-Jul-08
2007 - Si4966DY

Abstract: No abstract text available
Text: MOSFET N-Channel MOSFET Top View Ordering Information: Si4966DY­T1 Si4966DY­T1­E3 (Lead (Pb , Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS , S-52637-Rev. C, 02-Jan-06 www.vishay.com 1 Si4966DY Vishay Siliconix SPECIFICATIONS , , 02-Jan-06 Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Output , 75 100 125 150 TJ ­ Junction Temperature (_C) www.vishay.com 3 Si4966DY Vishay


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PDF Si4966DY 08-Apr-05
2005 - Not Available

Abstract: No abstract text available
Text: Top View Ordering Information: Si4966DY-T1 Si4966DY-T1-E3 (Lead (Pb)-Free) 8 7 6 5 D1 D1 D2 D2 G1 , Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 , -Apr-05 www.vishay.com Symbol RthJA Limit 62.5 Unit _C/W 1 Si4966DY Vishay Siliconix , . www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70718 S-50695-Rev. B, 18-Apr-05 Si4966DY , -Apr-05 www.vishay.com 3 Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain


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PDF Si4966DY Si4966DY-T1 Si4966DY-T1--E3 08-Apr-05
Not Available

Abstract: No abstract text available
Text: MOSFET Ordering Information: Si4966DY-T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 (Lead (Pb)-free and , Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS , Si4966DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , . www.vishay.com 2 Document Number: 70718 S09-0869-Rev. D, 18-May-09 Si4966DY Vishay Siliconix TYPICAL , , 18-May-09 www.vishay.com 3 Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless


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PDF Si4966DY 2002/95/EC Si4966DY-T1-E3 Si4966DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2012 - Not Available

Abstract: No abstract text available
Text: D1 D1 D2 D2 G1 G2 D1 D2 Ordering Information: Si4966DY-T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 , Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS , Si4966DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , -May-09 Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 VGS = 5 V thru 3 V , Number: 70718 S09-0869-Rev. D, 18-May-09 www.vishay.com 3 Si4966DY Vishay Siliconix TYPICAL


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PDF Si4966DY 2002/95/EC Si4966DY-T1-E3 Si4966DY-T1-GE3 11-Mar-11
2012 - Not Available

Abstract: No abstract text available
Text: D1 D1 D2 D2 G1 G2 D1 D2 Ordering Information: Si4966DY-T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 , Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS , Si4966DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , -May-09 Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 VGS = 5 V thru 3 V , Number: 70718 S09-0869-Rev. D, 18-May-09 www.vishay.com 3 Si4966DY Vishay Siliconix TYPICAL


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PDF Si4966DY 2002/95/EC Si4966DY-T1-E3 Si4966DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si4966DY

Abstract: No abstract text available
Text: MOSFET Top View N-Channel MOSFET Ordering Information: Si4966DY­T1 Si4966DY­T1­E3 (Lead (Pb , Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V 20 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested ID (A) " 6.0 D1 SO-8 S1 1 8 2 7 D1 , sec. * Pb containing terminations are not RoHS compliant, exemptions may apply 1 Si4966DY


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PDF Si4966DY
Not Available

Abstract: No abstract text available
Text: Si4966DY_ Vishay Siliconix TYPICAL CHARACTERISTICS (25 C UNLESS OTHERWISE NOTED , 2 .5 U N IT "C/W 3-87 4966DY Vishay Siliconix PARAMETER STATIC Gate Threshold


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PDF S-54939-- 29-Sep-97 Si4966DY
2002 - MSM586SEV

Abstract: SI4966DY U-152 MSM586-SEV
Text: APPLICATION NOTE 099 5V on ISA BUS is not available From: Dar Product: MSM586SEV / SEN To: Support Version: V2.1 Date: 15.01.2002 BIOS: - Who has issued this problem description: DLAG Support The problem description: The 5V on the ISA BUS are missing. The Application Fix Report: - Remove U152 ( SI4966DY ) 2 - Draw wire (min. 0.25mm diameter) from J48 PIN 2 to X2 PIN 2 J48/PIN2 ­ X2/PIN2 U152 The Longterm Solution: On the new PCB 2.3, this bug will be


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PDF MSM586SEV SI4966DY) J48/PIN2 App\app-099 app-099 SI4966DY U-152 MSM586-SEV
semiconductor cross reference

Abstract: AP40N03H STM8405 AP4411 AP60N03H Fairchild Cross Reference ap4503M ao3411 AO3401 cross reference anpec Cross Reference
Text: Si4894BDY Vishay Si4894DY Vishay Si4936ADY Vishay Si4953DY Vishay Si4966DY Vishay Si4966DY Vishay


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PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H Fairchild Cross Reference ap4503M ao3411 AO3401 cross reference anpec Cross Reference
STM9435

Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M AP9960M FDD6685 stm4532 APEC
Text: Si4894BDY Vishay Si4894DY Vishay Si4936ADY Vishay Si4953DY Vishay Si4966DY Vishay Si4966DY Vishay


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PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M AP9960M FDD6685 stm4532 APEC
IRF7205

Abstract: IRF7342 SI9933ADY SI9948AEY SI9942DY SI9939DY SI9407AEY SI4982DY SI4948EY IRF7319
Text: 30 0,025 2 2*N SI4431ADY 7 30 0,03 2,5 P SI9410DY 7 30 0,03 2,5 N SI4966DY 7,1 20 0,025 2 2*N


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PDF flMana30H IRF7104 SI9953DY SI9948AEY SI4982DY IRF7103 SI9942DY SI4948EY SI9933ADY IRF7342 IRF7205 SI9939DY SI9407AEY IRF7319
1999 - LTC1161

Abstract: LTC1473L Top Marking GA2 1812LS-105XKBC BAT54C LTC1473LCGN Si9926DY COILTRONICS CTX33-3 diode 5817 specifications
Text: Si4966DY R1 1.65M 1% R2 1.13M 1% LTC1442 3 7 + 1 6 ­ BAT54C 5 1 2 + , * COILCRAFT 18126S-105XKBC Si4966DY 3.3V or 5V, 6A, PowerPath Switch Si4966DY DCIN 3.3V 1 , TA06 Si4966DY 3.3V OR VBAT1 LTC1473L U TYPICAL APPLICATIO S Protected Hot SwapTM


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PDF LTC1473L 1473L LTC1558/LTC1559 LTC1622 550kHz LTC1628 LT1769 28-Lead 1473lf LTC1161 LTC1473L Top Marking GA2 1812LS-105XKBC BAT54C LTC1473LCGN Si9926DY COILTRONICS CTX33-3 diode 5817 specifications
1999 - Not Available

Abstract: No abstract text available
Text: Applications DCIN 3.3V Si4966DY R1 1.65M 1% R2 1.13M 1% LTC1442 3 7 + 1 6 â , GND COUT 1473 TA05 * COILCRAFT 18126S-105XKBC Si4966DY 3.3V or 5V, 6A, PowerPath Switch Si4966DY DCIN 3.3V 1 BAT54C LOGIC DRIVEN 2 3 4 5 6 CTIMER 550pF DCIN 5V 14 , GA2 10 SAB2 9 GB2 COUT 1473 TA06 Si4966DY 3.3V OR VBAT1 LTC1473L U TYPIC


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PDF LTC1473L 1473L LTC1558/LTC1559 LTC1622 550kHz LTC1628 LT1769 28-Lead 1473lf
ifr 350 mosfet

Abstract: 28-Lea BAT54C-H LTC1161 S9926DY SI9926DY LTC1473L s496 pc 817 mosfet gate drive t1614
Text: * SBNISE" VGG f/V sw SAB2 GND GB2 ' OQ LCRAFT18126S-105XKBC 1*1 Jtx. Si4966DY 0.04Q -W\r- X , CR5V ' 6A Qxir Si4966DY 14 /7ire/\B TECHNOLOGY LTC1473L TYPICAL APPUOVTlOriS Protected Hot


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PDF LTC1473L 16-Pin DE9CRIPT10n LTCf1473L LTC1558/LTC1559 LTC1622 550kHz LTC1628 LT1769 28-Lead ifr 350 mosfet 28-Lea BAT54C-H LTC1161 S9926DY SI9926DY LTC1473L s496 pc 817 mosfet gate drive t1614
ixfh26n60q

Abstract: 2SK2333 BUZ345 IRF1405 2SK2761 BSS89 irfp250n irfp260n P9NB60 2sk2671
Text: www.i-t.su ¡nfo@i-t.su MHTEPTEKC Ten: (495) 739-09-95, 644-41-29 electronics TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: Vd8! Ids Rds (on) Pmax Kopnyc [B] [A] [Om] [Br] SI4466DY 20 13,2 0,09 2,5 S08 SI4966DY 20 7,1 0,025 2 S08 SI9925DY 20 5 0,05 2 S08 SI9942DY 20 3/2,5 0,1250,2 2 S08 2SK1388 30 35 0,023 60 T0220AB IRF7319 30 6,5/4,9 0,29/0,058 2 S08 IRF7413 30 13 0,011 2,5 S08 IRF7455 30 15 0,0075 2,5 S08 IRL2203N 30 100 0,007 3,8 T0220 IRL3103 30 64 0,012 94 T0220


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PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 BUZ345 IRF1405 2SK2761 BSS89 irfp250n irfp260n P9NB60 2sk2671
sot23 BS170

Abstract: 2SK2671 rfp40n IXFN27N80 IRFL014N irf6348 P3NB60 IRF7305 STP22NE10L BSN304
Text: S08 VNP7N04 7 42 0,14 31 T0220 SI4966DY 7,1 20 0,025 2 S08 IRFI520N 7,2 100 0,2 27 TO220ISO


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PDF BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 rfp40n IXFN27N80 IRFL014N irf6348 P3NB60 IRF7305 STP22NE10L
mosfet cross reference

Abstract: SMP40N06 SI9952DY SMP75N06-08 IRFZ44 TO-263 SMP60N03-10L Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: -223, N Si4966DY FDS6890A SO-8, Dual N PHT6N03LT NDT455N SOT-223, N Si6410DQ


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PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SI9952DY SMP75N06-08 IRFZ44 TO-263 SMP60N03-10L Si9948DY irf1010e equivalent IRLL014N NDT3055L
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