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Vishay Intertechnologies
SI4800BDY-T1-E3 Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-E3)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet (5) SI4800BDY-T1-E3 Reel 2,500 31 Weeks 2,500 - - - - $0.2979 Buy Now
SI4800BDY-T1-E3 Cut Tape 360 16 Weeks 1 $0.3169 $0.3169 $0.3149 $0.3129 $0.3119 Buy Now
SI4800BDY-T1-E3 Tape and Reel 0 31 Weeks, 2 Days 2,500 - - - - €0.2349 Buy Now
SI4800BDY-T1-E3 Ammo Pack 0 33 Weeks, 1 Days 1 $0.88 $0.721 $0.553 $0.476 $0.476 Buy Now
SI4800BDY-T1-E3 Tape and Reel 0 33 Weeks 2,500 - - - - $0.1727 Buy Now
Newark element14 SI4800BDY-T1-E3 Cut Tape 651 1 $0.88 $0.721 $0.553 $0.476 $0.476 Buy Now
Bristol Electronics (3) SI4800BDY-T1-E3 13,428 - - - - - Buy Now
SI4800BDY-T1-E3 11,853 - - - - - Buy Now
SI4800BDY-T1-E3 1,732 - - - - - Buy Now
TME Electronic Components SI4800BDY-T1-E3 3,193 5 - $0.33 $0.27 $0.23 $0.2 Buy Now
Chip One Exchange (2) SI4800BDY-T1-E3 7,500 - - - - - Get Quote
SI4800BDY-T1-E3 522 - - - - - Get Quote
Vishay Intertechnologies
SI4800BDY-T1-GE3 Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet (2) SI4800BDY-T1-GE3 Tape and Reel 0 31 Weeks, 2 Days 2,500 - - - - €0.2129 Buy Now
SI4800BDY-T1-GE3 Reel 0 31 Weeks 2,500 - - - - $0.2939 Buy Now
Newark element14 SI4800BDY-T1-GE3 Cut Tape 0 1 $0.88 $0.721 $0.553 $0.476 $0.476 Buy Now
Bristol Electronics SI4800BDY-T1-GE3 3,089 - - - - - Buy Now
Vishay Intertechnologies
SI4800BDY-T1-GE3. Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:25V; Threshold Voltage Vgs:25V; Power Dissipation Pd:1.3W; No. of Pins:8Pins RoHS Compliant: No
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Newark element14 SI4800BDY-T1-GE3. Reel 0 1 $0.307 $0.307 $0.307 $0.307 $0.286 Buy Now
Vishay Intertechnologies
SI4800BDY-T1-E3. Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:1.3W; No. of Pins:8Pins RoHS Compliant: No
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Newark element14 SI4800BDY-T1-E3. Reel 2,500 1 $0.3 $0.3 $0.3 $0.3 $0.298 Buy Now
Vishay Siliconix
SI4800BDY-T1-E3 SI4800BDY-T1-E3 N-channel MOSFET Transistor; 6.5 A; 30 V; 8-Pin SOIC
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Allied Electronics & Automation SI4800BDY-T1-E3 Bulk 0 2,500 - - - - $0.324 Get Quote
America II Electronics SI4800BDY-T1-E3 18,937 - - - - - Buy Now
New Advantage Corporation SI4800BDY-T1-E3 7,500 7,500 - - - - $0.5909 Buy Now
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Vishay Siliconix
SI4800BDY-T1-E3/BKN N-Channel REDUCED QG; Fast Switching MOSFET
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Allied Electronics & Automation SI4800BDY-T1-E3/BKN Bulk 0 1 $0.68 $0.68 $0.65 $0.55 $0.55 Get Quote
Vishay Intertechnologies
SI4800BDY-T1-E3TR-ND
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics SI4800BDY-T1-E3TR-ND 1,732 - - - - - Buy Now
Vishay Intertechnologies
SI4800BDYT1-E3
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics SI4800BDYT1-E3 1,495 - - - - - Buy Now
Vishay Siliconix
SI4800BDY Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
ComS.I.T. SI4800BDY 150 - - - - - Get Quote
Vishay Intertechnologies
SI4800BDYT1E3 Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
ComS.I.T. SI4800BDYT1E3 1,575 - - - - - Get Quote
Vishay Intertechnologies
SI4800BDYT1GE3 Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
ComS.I.T. SI4800BDYT1GE3 2,500 - - - - - Get Quote
Others
SI4800BDY INSTOCK
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Chip One Exchange SI4800BDY 109 - - - - - Get Quote
VISIL
SI4800BDY INSTOCK
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Chip One Exchange SI4800BDY 273 - - - - - Get Quote
Vishay Intertechnologies
SI4800BDY
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
element14 Asia-Pacific SI4800BDY 0 1 $1.11 $0.892 $0.615 $0.494 $0.494 Buy Now

SI4800BDY datasheet (5)

Part Manufacturer Description Type PDF
SI4800BDY Vishay Siliconix MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.5A; Current, Idm pulse:40A; Power, Pd:1.3W; Resistance, Rds on:0.0185R; SMD:1; Charge, gate p Original PDF
SI4800BDY Vishay Siliconix MOSFETs Original PDF
Si4800BDY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
SI4800BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC Original PDF
SI4800BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC Original PDF

SI4800BDY Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - Not Available

Abstract: No abstract text available
Text: S Ordering Information: Si4800BDY Si4800BDY-T1 (with Tape and Reel) N-Channel MOSFET , Si4800BDY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT , -31676—Rev. c, 11-aUG-03 www.vishay.com 1 Si4800BDY New Product Vishay Siliconix MOSFET , -31676—Rev. c, 11-aUG-03 Si4800BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS , TJ - Junction Temperature (_C) www.vishay.com 3 Si4800BDY New Product Vishay Siliconix


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PDF Si4800BDY Si4800BDY-T1 S-31676â 11-aUG-03
2008 - AN819

Abstract: SI4686 Si4800BDY Si7806ADN Si7336ADP Si7112DN Si5404BDC Si4894BDY Si4686DY PowerPAK 1212
Text: -4 board. Si4800BDY : SO-8 Single-Die, Bonding-Wired Package Figure 1 shows the ThermaSim results of the Si4800BDY when dissipating 0.5 W. The results show a die temperature of + 80.95 °C and a top , 0.6 0.8 1 1.2 Power Dissipation (W) Figure 2 - Si4800BDY Top and die Temperature Rise , rise to Tdie rise. TABLE 1 - THE ThermaSim RESULTS FOR SI4800BDY Tdie (°C) Ttop (°C) Tdie , 80 90 100 Figure 3 - Top Temperature Rise vs. Die Temperature Rise of Si4800BDY Si4686DY


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PDF AN819, 29-Feb-08 AN819 SI4686 Si4800BDY Si7806ADN Si7336ADP Si7112DN Si5404BDC Si4894BDY Si4686DY PowerPAK 1212
Si4800BDY-E3

Abstract: Si4800BDY-T1 SI4800BDY-T1-E3 SI4800BDY SI4800DY Si4800DY-T1
Text: : Si4800BDY Replaces Si4800DY Si4800BDY-E3 (Lead (Pb)-free version) Replaces Si4800DY Si4800BDY-T1 Replaces Si4800DY-T1 Si4800BDY-T1-E3 (Lead (Pb)-free version) Replaces Si4800DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si4800BDY Si4800DY Drain-Source Voltage , Specification Comparison Vishay Siliconix Si4800BDY vs. Si4800DY Description: N-Channel , Junction-to-Ambient W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Si4800BDY Min


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PDF Si4800BDY Si4800DY Si4800BDY-E3 Si4800BDY-T1 Si4800DY-T1 Si4800BDY-T1-E3
2004 - Si4800BDY-E3

Abstract: Si4800BDY-T1 Si4800BDY ti e3 Si4800BDY
Text: Information: Si4800BDY Si4800BDY-T1 (with Tape and Reel) Si4800BDY-E3 (Lead (Pb)-Free) Si4800BDY-T1-E3 , Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V , -Aug-04 www.vishay.com 1 Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED , . www.vishay.com 2 Document Number: 72124 S-41524-Rev. D, 16-Aug-04 Si4800BDY Vishay Siliconix , 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4800BDY Vishay


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PDF Si4800BDY Si4800BDY-T1 Si4800BDY--E3 Si4800BDY-T1--E3 S-41524--Rev. 16-Aug-04 Si4800BDY-E3 Si4800BDY ti e3
Si4800BDY

Abstract: No abstract text available
Text: SPICE Device Model Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Model Subcircuit) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -Apr-03 www.vishay.com 1 SPICE Device Model Si4800BDY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS , . www.vishay.com 2 Document Number: 72258 29-Apr-03 SPICE Device Model Si4800BDY Vishay Siliconix


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PDF Si4800BDY 0-to-10V 29-Apr-03
2005 - SI4800BDY-T1-E3

Abstract: Si4800BDY-T1 Si4800BDY
Text: Information: Si4800BDY-T1 Si4800BDY-T1-E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS , Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT , Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol , Number: 72124 S-51455-Rev. F, 01-Aug-05 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25 , Temperature (_C) www.vishay.com 3 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS


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PDF Si4800BDY Si4800BDY-T1 Si4800BDY-T1--E3 S-51455--Rev. 01-Aug-05 SI4800BDY-T1-E3
2007 - SI4800BDY-T1-E3

Abstract: No abstract text available
Text: D D D G D D S N-Channel MOSFET Ordering Information: Si4800BDY-T1 Si4800BDY-T1-E3 (Lead (Pb , Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V , 24 Max 50 95 30 Unit _C/W 1 Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = , . www.vishay.com 2 Document Number: 72124 S-51455-Rev. F, 01-Aug-05 Si4800BDY Vishay Siliconix TYPICAL , ) www.vishay.com 3 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain


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PDF Si4800BDY Si4800BDY-T1 Si4800BDY-T1--E3 08-Apr-05 SI4800BDY-T1-E3
Si4800BDY-T1-E3

Abstract: Si4800BDY Si4800BDY-T1-GE3
Text: G 4 5 D D D G Top View S Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM , Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT , -Dec-08 www.vishay.com 1 Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted , Document Number: 72124 S-83039-Rev. H, 29-Dec-08 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS


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PDF Si4800BDY Si4800BDY-T1-E3 Si4800BDY-T1-GE3 11-Mar-11
2003 - si4800bdy

Abstract: No abstract text available
Text: -8 S S S G 1 2 3 4 Top View Ordering Information: Si4800BDY Si4800BDY-T1 (with Tape and Reel) 8 7 6 5 D , Si4800BDY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT , Steady-State RthJA RthJF Symbol Typ 40 70 24 Max 50 95 30 Unit _C/W 1 Si4800BDY Vishay , -31062-Rev. B, 26-May-03 Si4800BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , ) www.vishay.com 3 Si4800BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED


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PDF Si4800BDY Si4800BDY-T1 S-31062--Rev. 26-May-03
2003 - Si4800BDY

Abstract: No abstract text available
Text: Si4800BDY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT , -Mar-03 www.vishay.com 1 Si4800BDY New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS , . www.vishay.com 2 Document Number: 72124 S-03295-Rev. A, 03-Mar-03 Si4800BDY New Product Vishay , ) www.vishay.com 3 Si4800BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED , , 03-Mar-03 Si4800BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS


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PDF Si4800BDY S-03295--Rev. 03-Mar-03
Not Available

Abstract: No abstract text available
Text: D G 4 5 D D D G Top View S Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM , Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT , -Dec-08 www.vishay.com 1 Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted , reliability. www.vishay.com 2 Document Number: 72124 S-83039-Rev. H, 29-Dec-08 Si4800BDY Vishay


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PDF Si4800BDY Si4800BDY-T1-E3 Si4800BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2007 - Si4800BDY

Abstract: Si4800BDY-T1 Si4800BDY-T1-E3
Text: D G Top View S Ordering Information: Si4800BDY-T1 Si4800BDY-T1-E3 (Lead (Pb)-free , Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT , -Jan-07 www.vishay.com 1 Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted , Document Number: 72124 S-70138-Rev. G, 22-Jan-07 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS , Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4800BDY Vishay Siliconix


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PDF Si4800BDY Si4800BDY-T1 Si4800BDY-T1-E3 08-Apr-05
2009 - Si4800BDY-T1-GE3

Abstract: Si4800BDY Si4800BDY-T1-E3 SI4800B
Text: G 4 5 D D D G Top View S Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM , Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT , -Dec-08 www.vishay.com 1 Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted , Document Number: 72124 S-83039-Rev. H, 29-Dec-08 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS


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PDF Si4800BDY Si4800BDY-T1-E3 Si4800BDY-T1-GE3 18-Jul-08 SI4800B
2005 - Not Available

Abstract: No abstract text available
Text: View 8 7 6 5 D D D D G D S N-Channel MOSFET Ordering Information: Si4800BDY-T1 Si4800BDY-T1-E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter , Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V , Symbol RthJA RthJF Typ 40 70 24 Max 50 95 30 Unit _C/W 1 Si4800BDY Vishay Siliconix , reliability. www.vishay.com 2 Document Number: 72124 S-51168-Rev. E, 13-Jun-05 Si4800BDY Vishay


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PDF Si4800BDY Si4800BDY-T1 Si4800BDY-T1--E3 S-51168--Rev. 13-Jun-05
Si4800BDY

Abstract: Si4800BDY SPICE Device Model
Text: SPICE Device Model Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -60147Rev. B, 13-Feb-06 www.vishay.com 1 SPICE Device Model Si4800BDY Vishay Siliconix SPECIFICATIONS , Model Si4800BDY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE


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PDF Si4800BDY S-60147Rev. 13-Feb-06 Si4800BDY SPICE Device Model
TPC28T

Abstract: MAX1987ETM tpc8107 C2682 CM85621 2mm t140 asus 2SC252 2mm t120 2R403
Text: 6 5 2 1 D 1 Q70 SI4800BDY C405 0.1UF/25V 1 +5VA D34 RB717F 2 S GND G C401 0.1UF/25V Q69 SI4800BDY 5 6 7 8 D 2 D D G GND S +1.8VAUXO T131 , 5 6 7 8 1uF/6.3V CE9 150UF/4V CE10 2 2 820UF/6.3V D44 FS1J4TP 1 Q93 SI4800BDY 28 27 , 12 13 14 4 3 2 1 U33 C206 10UF/6.3V + 1 Q94 SI4800BDY D43 FS1J4TP 1 G C202 , JP13 1 1 2 2 +1.8V +1.8V 3MM_OPEN_5MIL /X GND 2 2 3 Q20 SI4800BDY GND D Q63 2N7002 /X


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PDF 15UF/25V 220uF/25V TPC28t 15UF/25V 1UF/25V SI4800BDY RB717F MAX1987ETM tpc8107 C2682 CM85621 2mm t140 asus 2SC252 2mm t120 2R403
2008 - Not Available

Abstract: No abstract text available
Text: * COMPLIANT SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4800BDY-T1 Si4800BDY-T1-E3 (Lead (Pb , Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS , Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , device reliability. www.vishay.com 2 Document Number: 72124 S-70138-Rev. G, 22-Jan-07 Si4800BDY , vs. Junction Temperature www.vishay.com 3 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25


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PDF Si4800BDY Si4800BDY-T1 Si4800BDY-T1-E3 18-Jul-08
SI4800B

Abstract: Si4800BDY Si4800BDY SPICE Device Model
Text: SPICE Device Model Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -60147Rev. B, 13-Feb-06 www.vishay.com 1 SPICE Device Model Si4800BDY Vishay Siliconix SPECIFICATIONS , Model Si4800BDY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE


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PDF Si4800BDY 18-Jul-08 SI4800B Si4800BDY SPICE Device Model
2012 - Not Available

Abstract: No abstract text available
Text: UIS and Rg Tested SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G D , Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS , Unit Document Number: 72124 S-83039-Rev. H, 29-Dec-08 www.vishay.com 1 Si4800BDY Vishay , device reliability. www.vishay.com 2 Document Number: 72124 S-83039-Rev. H, 29-Dec-08 Si4800BDY


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PDF Si4800BDY Si4800BDY-T1-E3 Si4800BDY-T1-GE3 11-Mar-11
2012 - si4800B

Abstract: No abstract text available
Text: UIS and Rg Tested SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G D , Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS , Unit Document Number: 72124 S-83039-Rev. H, 29-Dec-08 www.vishay.com 1 Si4800BDY Vishay , device reliability. www.vishay.com 2 Document Number: 72124 S-83039-Rev. H, 29-Dec-08 Si4800BDY


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PDF Si4800BDY Si4800BDY-T1-E3 Si4800BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4800B
R0402

Abstract: PC319 PQ301 TPC28T PC301 PJP302 11VS PR307 PJP303 PR300
Text: 5 4 3 2 1 AC_BAT_SYS Shape 25mil Shape AC_BAT_SYS AC_BAT_SYS PC300 0.1UF/25V PC301 10UF/25V PC302 10UF/25V /X PCE300 15UF/25V PQ300 SI4800BDY TPC28T PT300 /X +5VSUS 25mil PR301 0Ohm PC303 0.1UF/25V PQ301 SI4800BDY PCE301 15UF/25V PC304 10UF/25V PC305 10UF/25V /X PR300 4.7Ohm r0603_h24 P_+1.5VS_BOOT_25 PD300 BAT54AW P_+1.1VS_BOOT_25 Close to PCE301 +1.1VS , _+1.1VS_PAHSE_S PQ303 SI4800BDY P_+1.1VS_PAHSE_S P_+1.1VS_BOOT_25 PR306 P_+1.1VS_CS_10 1 2 2KOhm 1% r0603_h24 1 1.8UH


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PDF 25mil PC300 1UF/25V PC301 10UF/25V PC302 10UF/25V PCE300 15UF/25V PQ300 R0402 PC319 PQ301 TPC28T PJP302 11VS PR307 PJP303 PR300
Si4830

Abstract: Fast Switching mosfet SI3433B smd diode 615
Text: Features Package Si4800BDY N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 25V , 13.5x13.5x3.5mm Low Side MOSFETs Product Name Status Description Features Package Si4800BDY , ® Technology Low Qgd ID=13.8A; rDS(on)=0.014Ω Qgd = 2.8 nC; SMD SO-8 Si4800BDY N-Ch. Reduced , =13.8A; rDS(on)=0.014Ω Qgd = 2.8 nC; SMD SO-8 Si4800BDY N-Ch. Reduced Qg, Fast Switching MOSFET , ; Qgd= 8.6nC; VGSth= 1 V; SMD TSOP-6 Si4800BDY N-Ch. Reduced Qg, Fast Switching MOSFET VDS =


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PDF 4110ppm 400ppm Q-101 BZX384 OD323 Si4830 Fast Switching mosfet SI3433B smd diode 615
ite8712f

Abstract: ITE-8712f AR1511 asus ite8712 it8712f SiSM661MX SIS964 sis661fx SOCKET479P
Text: No file text available


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PDF 31--BATLOW/SD 32--CHARGER 33--PIC16C54/BAT 34--Vcore 35--VCCP 36--GPIO 37--POWER 38--History 01--INDEX 02--BLOCK ite8712f ITE-8712f AR1511 asus ite8712 it8712f SiSM661MX SIS964 sis661fx SOCKET479P
attansic f1

Abstract: RC415M Attansic l1 RC415ME asus attansic lan schematic Attansic f2 PT6319 PAD381 c1826
Text: No file text available


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PDF 133/166MHz RC415ME SB600 33MHz ITE8510E ICS951463AGLFT L78L05 F02JK2E) LM4040BIM SI9183DT attansic f1 RC415M Attansic l1 RC415ME asus attansic lan schematic Attansic f2 PT6319 PAD381 c1826
semiconductor cross reference

Abstract: AP40N03H STM8405 AP4411 AP60N03H Fairchild Cross Reference ap4503M ao3411 AO3401 cross reference anpec Cross Reference
Text: Si4736DY Vishay Si4800BDY Vishay Si4800DY Vishay Si4802DY Vishay Si4807DY Vishay Si4810BDY Vishay


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PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H Fairchild Cross Reference ap4503M ao3411 AO3401 cross reference anpec Cross Reference
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