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Vishay Intertechnologies
SI2300DS-T1-GE3 Trans MOSFET N-CH 30V 3.1A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2300DS-T1-GE3)
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Avnet (6) SI2300DS-T1-GE3 Cut Tape 255 55 Weeks 1 $0.4169 $0.4169 $0.3289 $0.1839 $0.1679 More Info
SI2300DS-T1-GE3 Reel 0 55 Weeks 3,000 - - - - $0.1269 More Info
SI2300DS-T1-GE3 Reel 0 - - - - - More Info
SI2300DS-T1-GE3 Tape and Reel 0 57 Weeks 3,000 - - - - - More Info
SI2300DS-T1-GE3 Ammo Pack 0 15 Weeks, 6 Days 1 $0.516 $0.516 $0.29 $0.185 $0.185 More Info
SI2300DS-T1-GE3 Tape and Reel 0 45 Weeks, 2 Days 3,000 - - - - €0.2109 More Info
Newark element14 (2) SI2300DS-T1-GE3 Reel 0 1 $0.14 $0.14 $0.14 $0.14 $0.131 More Info
SI2300DS-T1-GE3 Cut Tape 0 1 $0.538 $0.538 $0.303 $0.193 $0.193 More Info
Rutronik SI2300DS-T1-GE3 Reel 0 3,000 - - - - $0.201 More Info
Chip1Stop SI2300DS-T1-GE3 Cut Tape 140 1 $1.15 $0.314 $0.171 $0.171 $0.171 More Info
element14 Asia-Pacific (2) SI2300DS-T1-GE3 0 1 $0.681 $0.515 $0.384 $0.244 $0.24 More Info
SI2300DS-T1-GE3 0 1 $0.681 $0.515 $0.384 $0.244 $0.194 More Info
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Farnell element14 SI2300DS-T1-GE3 0 1 £0.453 £0.453 £0.255 £0.233 £0.233 More Info
Vishay Intertechnologies
SI2300DS-T1-GE3. N-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: NO
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Newark element14 SI2300DS-T1-GE3. Reel 0 1 $0.14 $0.14 $0.14 $0.14 $0.131 More Info
Vishay Siliconix
SI2300DS-T1-GE3 MOSFET N-CH 30V 3.6A SOT-23
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Allied Electronics & Automation SI2300DS-T1-GE3 Bulk 0 3,000 - - - - $0.342 More Info
Vishay Intertechnologies
SI2300DS-T1-GE3
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Bristol Electronics SI2300DS-T1-GE3 595 - - - - - More Info
Vishay Intertechnologies
SI2300DS-T1-GE3DKR
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Bristol Electronics SI2300DS-T1-GE3DKR 200 - - - - - More Info
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Vishay Intertechnologies
SI2300DST1GE3 Small Signal Field-Effect Transistor, 3.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. SI2300DST1GE3 3,000 - - - - - More Info

SI2300 datasheet (3)

Part Manufacturer Description Type PDF
SI2300 Kexin N-Channel Enhancement Mode MOSFET Original PDF
SI2300 TY Semiconductor TY Equivalent - N-Channel Enhancement Mode MOSFET - SOT-23 Original PDF
SI2300DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.6A SOT-23 Original PDF

SI2300 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
SI2300

Abstract: si2300 sot-23 mosfet si2300
Text: SI2300 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m 80m Features Advanced trench process technology High Density Cell , SI2300 20V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise , <=300us,duty cycle <= 2%. JinYu semiconductor www.htsemi.com SI2300 20V N-Channel , VDS ­ Drain-to-Source Voltage (V) Gate Charge 5 4 www.htsemi.com 150 SI2300 20V


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PDF SI2300 OT-23 SI2300 si2300 sot-23 mosfet si2300
smd diode 319

Abstract: SI2300 smd transistor 888 SMD TRANSISTOR mosfet si2300 mosfet si2300 1A smd mosfet ki2300 mosfet vgs 5v 78 DIODE SMD si2300 sot-23
Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KI2300( SI2300 ) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features @VGS=2.5V,ID=4.0A @VGS=1.8V,ID=1.0A 1 0.55 +0.1 1.3-0.1 VDS=20V,RDS(ON)=75m +0.1 2.4-0.1 @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m 0.4 3 VDS=20V,RDS(ON)=40m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 , Mounted on FR 4 Board ,t 10 sec. www.kexin.com.cn 1 MOSFET IC SMD Type KI2300( SI2300


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PDF KI2300 SI2300) OT-23 smd diode 319 SI2300 smd transistor 888 SMD TRANSISTOR mosfet si2300 mosfet si2300 1A smd mosfet mosfet vgs 5v 78 DIODE SMD si2300 sot-23
si2300 sot-23

Abstract: No abstract text available
Text: Product specification KI2300( SI2300 ) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features @VGS=2.5V,ID=4.0A @VGS=1.8V,ID=1.0A 1 0.55 +0.1 1.3-0.1 VDS=20V,RDS(ON)=75m +0.1 2.4-0.1 @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m 0.4 3 VDS=20V,RDS(ON)=40m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate , Product specification KI2300( SI2300 ) Electrical Characteristics Ta = 25 Parameter Symbol


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PDF KI2300 SI2300) OT-23 si2300 sot-23
si2300

Abstract: Si2300DS S10-0258
Text: SPICE Device Model Si2300DS Vishay Siliconix N-Channel 30 V (D-S) MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature , , 01-Feb-10 www.vishay.com 1 SPICE Device Model Si2300DS Vishay Siliconix SPECIFICATIONS TJ = , . www.vishay.com 2 Document Number: 65845 S10-0258-Rev. A, 01-Feb-10 SPICE Device Model Si2300DS Vishay


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PDF Si2300DS 18-Jul-08 si2300 S10-0258
2010 - Si2300DS

Abstract: SI2300 Si2300DS-T1-GE3 P2 MARKING CODE s100111rev
Text: Si2300DS (P2)* * Marking Code S Ordering Information: Si2300DS-T1-GE3 (Lead (Pb)-free and , New Product Si2300DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT , /W www.vishay.com 1 New Product Si2300DS Vishay Siliconix SPECIFICATIONS TJ = 25 °C , Product Si2300DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 5 , ) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si2300DS Vishay Siliconix


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PDF Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 18-Jul-08 SI2300 P2 MARKING CODE s100111rev
2014 - Not Available

Abstract: No abstract text available
Text: Top View Si2300DS (P2)* * Marking Code S Ordering Information: Si2300DS-T1-GE3 (Lead (Pb)-free , New Product Si2300DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT , Unit °C/W www.vishay.com 1 New Product Si2300DS Vishay Siliconix SPECIFICATIONS TJ = 25 , Number: 65701 S10-0111-Rev. A, 18-Jan-10 New Product Si2300DS Vishay Siliconix TYPICAL , www.vishay.com 3 New Product Si2300DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise


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PDF Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2010 - si2300

Abstract: Si2300DS A 0412 MOSFET AN609
Text: Si2300DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in , specification limits. Document Number: 65731 Revision: 15-Jan-10 www.vishay.com 1 Si2300DS_RC , : 65731 Revision: 15-Jan-10 Si2300DS_RC Vishay Siliconix Document Number: 65731 Revision: 15


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PDF Si2300DS AN609, 15-Jan-10 si2300 A 0412 MOSFET AN609
Si2300DS

Abstract: No abstract text available
Text: Top View Si2300DS (P2)* * Marking Code S Ordering Information: Si2300DS-T1-GE3 (Lead (Pb)-free , New Product Si2300DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT , Unit °C/W www.vishay.com 1 New Product Si2300DS Vishay Siliconix SPECIFICATIONS TJ = 25 , 2 Document Number: 65701 S10-0111-Rev. A, 18-Jan-10 New Product Si2300DS Vishay Siliconix , Temperature www.vishay.com 3 New Product Si2300DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C


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PDF Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 18-Jul-08
2014 - Not Available

Abstract: No abstract text available
Text: SPICE Device Model Si2300DS www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C , FORTH AT www.vishay.com/doc?91000 SPICE Device Model Si2300DS www.vishay.com Vishay Siliconix , www.vishay.com/doc?91000 SPICE Device Model Si2300DS www.vishay.com Vishay Siliconix COMPARISON OF


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PDF Si2300DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A irfd120 sir166 SIR836 si4459a si7949
Text: No file text available


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PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A irfd120 sir166 SIR836 si4459a si7949
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