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SGP6N60UFDTU Rochester Electronics - - -
SGP6N60UFDTU Fairchild Semiconductor Corporation Rochester Electronics 869 $0.76 $0.62
SGP6N60UFDTU_NL Rochester Electronics - - -

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SGP6N60UF datasheet (7)

Part Manufacturer Description Type PDF
SGP6N60UF Fairchild Semiconductor Discrete, High Performance IGBT Original PDF
SGP6N60UF Fairchild Semiconductor Ultra-Fast IGBT Original PDF
SGP6N60UF Fairchild Semiconductor N-CHANNEL IGBT Scan PDF
SGP6N60UFD Fairchild Semiconductor Ultra-Fast IGBT Original PDF
SGP6N60UFD Fairchild Semiconductor Discrete, High Performance IGBT with Diode Original PDF
SGP6N60UFD Fairchild Semiconductor N-CHANNEL IGBT Scan PDF
SGP6N60UFDTU Fairchild Semiconductor Discrete, High Performance IGBT with Diode Original PDF

SGP6N60UF Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - Not Available

Abstract: No abstract text available
Text: SGP6N60UF FEATURES N-CHANNEL IGBT TO-220 * High Speed Switching * Low Saturation Voltage , temperature Rev.B ©1999 Fairchild Semiconductor Corporation N-CHANNEL IGBT SGP6N60UF ELECTRICAL , nC Le Internal Emitter Inductance Measured 5mm from PKG - 7.5 - nH SGP6N60UF , Case-to-Sink - 0.5 - °C/W N-CHANNEL IGBT SGP6N60UF 8 25 Vcc = 300V Load Current : peak , IGBT SGP6N60UF 10 T hermal Response [Zthjc] 0 .5 1 0 .2 0 .1 0 .0 5 Pdm 0 .0 2


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PDF SGP6N60UF O-220
2000 - SGP6N60UF

Abstract: No abstract text available
Text: IGBT SGP6N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate , = 100°C SGP6N60UF 600 ± 20 6 3 25 30 12 -55 to +150 -55 to +150 Units V V A A A , . 4.0 62.5 Units °C/W °C/W SGP6N60UF Rev. A SGP6N60UF September 2000 Symbol , , Inductive Load, TC = 125°C VCE = 300 V, IC = 3A, VGE = 15V Measured 5mm from PKG SGP6N60UF Rev. A SGP6N60UF Electrical Characteristics of IGBT T Collector Current, IC [A] 25 Collector Current


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PDF SGP6N60UF O-220 SGP6N60UF
2002 - Not Available

Abstract: No abstract text available
Text: method Product Folder - Fairchild P/N SGP6N60UF - Discrete, High Performance IGBT SGP6N60UFTU , SGP6N60UF IGBT SGP6N60UF Ultra-Fast IGBT General Description Fairchild's UF series of , °C SGP6N60UF 600 ± 20 6 3 25 30 12 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Notes : (1 , 4.0 62.5 Units °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGP6N60UF Rev. A1 SGP6N60UF Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise


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PDF SGP6N60UF O-220 SGP6N60UF SGP6N60UFTU
SGP6N60UF

Abstract: No abstract text available
Text:  SGP6N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat , This Material Copyrighted By Its Respective Manufacturer SGP6N60UF N-CHANNEL IGBT ELECTRICAL , Copyrighted By Its Respective Manufacturer SGP6N60UF N-CHANNEL IGBT THERMAL RESISTANCE Symbol , Case-to-Sink - 0.5 - °c/w This Material Copyrighted By Its Respective Manufacturer SGP6N60UF N-CHANNEL , SGP6N60UF N-CHANNEL IGBT Rectangular Pulse Duration [sec] Fig.5 Maximum Effective Transient Thermal


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PDF SGP6N60UF SGP6N60UF
2002 - SGP6N60UF

Abstract: No abstract text available
Text: SGP6N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated , = 100°C SGP6N60UF 600 ± 20 6 3 25 30 12 -55 to +150 -55 to +150 Units V V A A A , . 4.0 62.5 Units °C/W °C/W SGP6N60UF Rev. A1 SGP6N60UF IGBT C Symbol Parameter , , Inductive Load, TC = 125°C VCE = 300 V, IC = 3A, VGE = 15V Measured 5mm from PKG SGP6N60UF Rev. A1 SGP6N60UF Electrical Characteristics of the IGBT T Collector Current, IC [A] 25 Collector


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PDF SGP6N60UF O-220 SGP6N60UF
Not Available

Abstract: No abstract text available
Text: N-CHANNEL IGBT SGP6N60UF FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat , SGP6N60UF ELECTRICAL CHARACTERISTICS (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics , 1MHz C O > II ^ G E (th ) O a v Typ Max SGP6N60UF N-CHANNEL IGBT THERMAL , Characteristics ReJC N-CHANNEL IGBT SGP6N60UF 0 Fig.1 Typical Load Current vs. Frequency 25 , T c fC ] Fig.4 Collector to Emitter Voltage vs. Case Temperature 10 SGP6N60UF N-CHANNEL


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PDF SGP6N60UF
Not Available

Abstract: No abstract text available
Text: SGP6N60UF FEATURES * High Speed Switching * Low Saturation Volatge : VC E(sat) = 2.1 V (@ lc , SGP6N60UF ELECTRICAL CHARACTERISTICS (Tc=25t:,Unless Otherwise Specified) Symbol BVCes ¿IV ces , = 300V VGE=15V < C O O II - Measured 5mm from PKG - 38 ELECTRONICS SGP6N60UF , SGP6N60UF N-CHANNEL IGBT Frequency [kHz} VceM Fig.1 Typical Load Current vs. Frequency Fig , Fig.4 Collector to Emitter Voltage vs. Case Temperature 40 ELECTRONICS SGP6N60UF N-CHANNEL


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PDF SGP6N60UF O-220
Not Available

Abstract: No abstract text available
Text: SGP6N60UF FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ lc , i C i N jO L J . ©1999 Fairchild Semiconductor Corporation SGP6N60UF ELECTRICAL , SGP6N60UF THERMAL RESISTANCE Symbol Rq JC R ftJA R eC S N-CHANNEL IGBT Characteristics , - - 0.5 U D SGP6N60UF N-CHANNEL IGBT 0.1 1 10 100 1000 0 2 4 , ft O M I U D S ä S ü ì'v 'j !C i C i N j O L J ìc ;.' 5` SGP6N60UF N-CHANNEL IGBT Thermal


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PDF SGP6N60UF O-220
1999 - Not Available

Abstract: No abstract text available
Text: SGP6N60UF FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic , Corporation SGP6N60UF ELECTRICAL CHARACTERISTICS (Tc=25°C,Unless Otherwise Specified) Symbol BVCES VCES , PKG - SGP6N60UF THERMAL RESISTANCE Symbol RJC RJA RCS N-CHANNEL IGBT Characteristics , SGP6N60UF 8 Vcc = 300V Load Current : peak of square wave 25 N-CHANNEL IGBT 20 6 Tc = 25 Tc = , Current vs. Case Temperature Fig.4 Collector to Emitter Voltage vs. Case Temperature SGP6N60UF 10


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PDF SGP6N60UF O-220
IC 74142

Abstract: No abstract text available
Text: SGP6N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : VCE , . junction temperature 7^4142 0 0 3 ^ 7 5 7 2bT SGP6N60UF N-CHANNEL IGBT ELECTRICAL , 7.5 7^4142 DD3T7Sfl 1Tb 95 ns 280 ns nH SGP6N60UF N-CHANNEL IGBT THERMAL , Max Units °c/w N-CHANNEL IGBT SGP6N60UF 100 1000 10000 100000 0 2 4 , .4 Collector to Emitter Voltage vs. Case Temperature 7 T b 4 1 4 E G D 3 T 7 b O Ö54 SGP6N60UF


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PDF SGP6N60UF 3t17b2 003b32fl O-220 IC 74142
SGL40N150

Abstract: SGH80N60UFD SGH40N60UFD IGBT Guide SGL60N90D F 10 L 600
Text: 80 80 110 100 80 110 100 50 50 70 80 80 80 110 80 110 80 100 50 70 TO-220 SGP6N60UF SGP13N60UF , SGR2N60UFD SGW6N60UFD SGW13N60UFD TO-220 SGP6N60UFD SGP13N60UFD TO-3P SGH13N60UFD SGH23N60UFD


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PDF SGR6N60UF SGW6N60UF SGW13N60UF SGW23N60UF O-220 SGP6N60UF SGP13N60UF SGP23N60UF SGP40N60UF SGH40N60UF SGL40N150 SGH80N60UFD SGH40N60UFD IGBT Guide SGL60N90D F 10 L 600
SGH80N60RUFD

Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
Text: SGH30N60UFD SGH30N60RUFD SGL30N60RUFD SGP6N60UF SGP6N60UFD SGW6N60UF SGW6N60UFD SGU6N60UF SGH80N60UF


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PDF SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
2002 - INDUCTION HEATING

Abstract: induction heating ic high power Induction Heating HGT1N30N60A4D SGH10N120RUF SGS13N60UFD FGK60N6S2D SGS5N150UF HGT1S12N60C3S HGT1S5N120BNDS
Text: Control SGP6N60UF 600 3 2.1 70 No No Motor Control; Power Conversion SGP6N60UFD


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PDF HGT1N30N60A4D HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 SGF23N60UFD SGF15N60RUFD SGF40N60UF INDUCTION HEATING induction heating ic high power Induction Heating HGT1N30N60A4D SGH10N120RUF SGS13N60UFD FGK60N6S2D SGS5N150UF HGT1S12N60C3S HGT1S5N120BNDS
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
RURU8060

Abstract: 3 phase motor control FM2G75US60 FFPF60B150DS 1N4004 SMA Piezoelectric 1Mhz smps welding machine INDUCTION HEATING SGS5N150UF FMBH1G100US60
Text: -227 HGT1N30N60A4D HGT1N40N60A4D TO-220 HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 HGTP3N60B3D


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PDF FGS15N40L OT-227 HGT1N30N60A4D HGT1N40N60A4D O-220 HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 RURU8060 3 phase motor control FM2G75US60 FFPF60B150DS 1N4004 SMA Piezoelectric 1Mhz smps welding machine INDUCTION HEATING SGS5N150UF FMBH1G100US60
2002 - STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: 5.0 2.0 TO-220 SGP06N60 SGP6N60UF 600 3.0 2.1 TO-220 SGP04N60 SGP6N60UFD


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PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
1999 - ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
Text: 29 SGP5N60RUFD 29 SGP6N60UF 29 SGP6N60UFD 29 SGR15N40L 30 SGR20N40L 30 SGR2N60UFD 29


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PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
2004 - thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 Diode 1N4001 50V 1.0A DO-41 Rectifier Diode BZX85C6V8 SPICE MODEL K*D1691 make SMPS inverter welding machine 1N5402 spice model transistor KSP44 tip122 tip127 mosfet audio amp
Text: No file text available


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PDF
2002 - 200v 3A ultra fast recovery diode

Abstract: SGP6N60UFD SGP6N60
Text: SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated , 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGP6N60UFD 600 ± 20 6 3 25 4 25 30 12 -55 , . - Max. 4.0 7.0 62.5 Units °C/W °C/W °C/W SGP6N60UFD Rev. A1 SGP6N60UFD IGBT , /us V ns A nC SGP6N60UFD Rev. A1 SGP6N60UFD Electrical Characteristics of the IGBT T , SGP6N60UFD 15 30 IC = 1.5A 1 4 2 0 Duty cycle : 50% TC = 100 Power Dissipation = 9W


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PDF SGP6N60UFD O-220 SGP6N60UFD 200v 3A ultra fast recovery diode SGP6N60
vex servo motor

Abstract: TE129 SGP6N60UFD bt 141
Text:  SGP6N60UFD IG BT CO-PAK FEATURES * High Speed Switching * Low Saturation Volatge : VCE(sat , ) Repeatitive rating : Pulse width limited by max. junction temperature 7*ib414E 003^3 5b3 SGP6N60UFD IG BT , 4TT ■SGP6N60UFD IG BT CO-PAK ELECTRICAL CHARACTERISTICS (DIODE PART) (Tj=2S>c,Unless Otherwise , °c/w 7^4142 003^7^ 33b SGP6N60UFD IG BT CO-PAK ¿4 , Voltage vs. Case Temperature SGP6N60UFD IG BT CO-PAK Ractangular Puis« Duration [sec] Fig.5 Maximum


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PDF SGP6N60UFD 30-OTO T0-220 QQ3b32fl O-220 500MIN D3b33D vex servo motor TE129 SGP6N60UFD bt 141
FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
Text: No file text available


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PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
2002 - Not Available

Abstract: No abstract text available
Text: SGP6N60UFD IGBT SGP6N60UFD Ultra-Fast IGBT General Description Fairchild's UFD series of , 100°C SGP6N60UFD 600 ± 20 6 3 25 4 25 30 12 -55 to +150 -55 to +150 300 Units V V A A A A A W W , Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGP6N60UFD Rev. A1 SGP6N60UFD , TC = 25°C TC = 100°C TC = 25°C TC = 100°C ©2002 Fairchild Semiconductor Corporation SGP6N60UFD Rev. A1 SGP6N60UFD 30 Common Emitter T C = 25 25 20V 15 Common Emitter VGE = 15V TC = 25 TC


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PDF SGP6N60UFD O-220 SGP6N60UFD SGP6N60UFDTU
Not Available

Abstract: No abstract text available
Text: N-CHANNEL IGBT SGP6N60UFD FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat , N-CHANNEL IGBT SGP6N60UFD ELECTRICAL CHARACTERISTICS (IGBT PART) Test Conditions Min bvC s E , O > Symbol O (Tc=25°C,Unless Otherwise Specified) Typ Max Units SGP6N60UFD , Characteristics ReJC N-CHANNEL IGBT SGP6N60UFD 0 Fig.1 Typical Load Current vs. Frequency 25 , .4 Collector to Emitter Voltage vs. Case Temperature 10 SGP6N60UFD N-CHANNEL IGBT R ectangular P


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PDF SGP6N60UFD
2002 - SGP6N60UFD

Abstract: No abstract text available
Text: SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated , 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGP6N60UFD 600 ± 20 6 3 25 4 25 30 12 -55 , . - Max. 4.0 7.0 62.5 Units °C/W °C/W °C/W SGP6N60UFD Rev. A1 SGP6N60UFD IGBT , /us V ns A nC SGP6N60UFD Rev. A1 SGP6N60UFD Electrical Characteristics of the IGBT T , SGP6N60UFD 15 30 IC = 1.5A 1 4 2 0 Duty cycle : 50% TC = 100 Power Dissipation = 9W


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PDF SGP6N60UFD O-220 95MAX. 54TYP SGP6N60UFD
1999 - 200v 3A IGBT

Abstract: No abstract text available
Text: SGP6N60UFD FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic , temperature Rev.B ©1999 Fairchild Semiconductor Corporation SGP6N60UFD ELECTRICAL CHARACTERISTICS , Inductive Load - Vcc = 300V VGE = 15V Ic = 3A Measured 5mm from PKG - SGP6N60UFD ELECTRICAL , SGP6N60UFD 8 Vcc = 300V Load Current : peak of square wave 25 N-CHANNEL IGBT 20 6 Tc = 25 Tc = , Current vs. Case Temperature Fig.4 Collector to Emitter Voltage vs. Case Temperature SGP6N60UFD 10


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PDF SGP6N60UFD O-220 200v 3A IGBT
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