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SEMIX302KD16S SEMIKRON Allied Electronics & Automation - $143.56 $112.80

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SEMIX302KD16S datasheet (1)

Part Manufacturer Description Type PDF
SEMiX302KD16s Semikron Rectifier Diode Module Original PDF

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2010 - SEMiX302KD16s

Abstract: semikron thyristor
Text: SEMiX302KD16s Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier , SEMiX302KD16s Visol Features Characteristics · Terminal height 17 mm · Chips soldered directly to , /s2 a w 250 g KD © by SEMIKRON Rev. 26 ­ 25.03.2010 1 SEMiX302KD16s Fig. 1L , SEMIKRON SEMiX302KD16s Fig. 4L: Power dissipation of three modules vs. direct current Fig. 4R , . 26 ­ 25.03.2010 3 SEMiX302KD16s spring configuration SEMiX 2s This is an electrostatic


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PDF SEMiX302KD16s SEMiX302KD16s semikron thyristor
2012 - Not Available

Abstract: No abstract text available
Text: SEMiX302KD16s Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier , Tstg SEMiX302KD16s Visol Features Characteristics Terminal height 17 mm Chips soldered , SEMiX302KD16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power , temperature 2 Rev. 2 – 13.12.2012 © by SEMIKRON SEMiX302KD16s Fig. 6: Transient thermal , SEMIKRON Rev. 2 – 13.12.2012 3 SEMiX302KD16s spring configuration SEMiX 2s This is an


Original
PDF SEMiX302KD16s
Not Available

Abstract: No abstract text available
Text: SEMiX302KD16s Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C , Tstg SEMiX302KD16s Visol AC sinus 50Hz Features Characteristics Terminal height 17 mm , SEMiX302KD16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power , temperature 2 Rev. 2 – 13.12.2012 © by SEMIKRON SEMiX302KD16s Fig. 6: Transient thermal , SEMIKRON Rev. 2 – 13.12.2012 3 SEMiX302KD16s spring configuration SEMiX 2s This is an


Original
PDF SEMiX302KD16s
2012 - Not Available

Abstract: No abstract text available
Text: SEMiX302KD16s Absolute Maximum Ratings Symbol IFAV IFSM i2t Conditions sin. 180° 10 ms 10 ms , SEMiX302KD16s Features Terminal height 17 mm Chips soldered directly to isolated substrate 4000 4800 , SEMiX302KD16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power , temperature © by SEMIKRON Rev. 1 ­ 20.03.2012 SEMiX302KD16s Fig. 6: Transient thermal impedance vs , Rev. 1 ­ 20.03.2012 3 SEMiX302KD16s spring configuration SEMiX 2s This is an


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PDF SEMiX302KD16s SEMiX302KD16s
SEMIX353GB126V1

Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
Text: SEMiX302KD16s SEMiX302KH16s SEMiX302KT16s SEMiX251D12Fs SEMiX341D16s SEMiX241DH16s hexagonal nuts X X


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PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
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