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SDP8406-2 datasheet (1)

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1997 - all datasheet phototransistor

Abstract: Infrared Phototransistor SDP8406 SEP8506 SEP8706
Text: inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) DIM , _015.cdr Responsivity vs Angular Displacement Fig. 2 gra_054.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 , current - mA Relative response gra_036.ds4 400 600 800 1000 1200 6 4 2 1.0 0.6 0.4


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PDF SDP8406 SEP8506 SEP8706 INFRA-21 SDP8406 SEP8506 all datasheet phototransistor Infrared Phototransistor
SDP8406

Abstract: SDP8406-004 SDP8406-001 SDP8406-002 SDP8406-003 SEP8706
Text: decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) INFRA-17.DIM DESCRIPTION The SDP8406 is an NPN , Angular Response( 2 ) Rise And Fall Time SYMBOL IL MIN TYP 0.15 1.80 3.40 6.40 ICEO V(BR , radiation source is an IRED with a peak wavelength of 935 nm. 2 . Angular response is defined as the total , Collector 30 V 5V 100 mW(1) -40°C to 85°C -40°C to 85°C 240°C INFRA- 2 .SCH Notes 1. Derate , -60 -45 -30 -15 Fig. 3 tr t Fig. 2 INFRA-54.GRA Relative response Fig. 1 0V


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PDF SDP8406 INFRA-21 SEP8506/8526 SEP8706 INFRA-17 SDP8406 SEP8506 INFRA-31 SDP8406-004 SDP8406-001 SDP8406-002 SDP8406-003
TRANSISTOR K 135

Abstract: SDP8405-14 transistor pt 42 transistor SDP8405-13 TRANSISTOR GUIDE transistor 650 SDP8426-2
Text: 41 PT V r Drawing 24 Page 41 < SDP8405-1 SDP8405- 2 SDP8405-3 SDP8405-11 SDP8405-12 SDP8405-13 SDP8405-14 SDP8425-1 SDP8425- 2 SDP8106-1 SDP8406-1 SDP8406-2 SDP8406-3 SDP8406-4 SDP8426-1 SDP8426- 2 , 1.00 7.00 1.00 0.15 1.80 3.40 6.40 0.15 1.80 0.10 14.00 14.00 0.46 0.92 1.85 units V« Note 2 mA 5.0 mA , between half-sensitivity points measured with a point source of radiation. 2 . Bias level is expressed in


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PDF SDP8405-1 SDP8405-2 SDP8405-3 SDP8405-11 SDP8405-12 SDP8405-13 SDP8405-14 SDP8425-1 SDP8425-2 SDP8106-1 TRANSISTOR K 135 transistor pt 42 transistor TRANSISTOR GUIDE transistor 650 SDP8426-2
phototransistor 650 nm

Abstract: No abstract text available
Text: UTLIN E DIM ENSIONS in inches (mm) Tolerance 3 pic decimals ±0.005(0.12) 2 pic decimals ±0.020(0.51 , Response1 2 * Rise And Fall Time SYM BO L MIN 0.15 1.80' 3.40 6.40 Ic e o TYP MAX 1.90 3.60 6.50 100 , D with a p e a k w a vele ng th of 9 3 5 nm. 2 . A n g u la r re sp o n se is defined a s the total , sec) N otes 1. D erate line a rly from 2 5 °C tree-air tem perature at the rate of 0 .78 m W /°C. , O A Ô - .1000 0 £ Fig. 2 Collector Current vs Ambient Temperature Fig. 1 Responsivity


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PDF SDP8406 SEP8506/8526 SEP8706 SDP8406 SEP8506 phototransistor 650 nm
SV70M

Abstract: SDP8406-003
Text: ±0.005(0,12) 2 pic decimals ±0.020(0.51) .200(5.08) .180(4.57) - -020SQ. LEADTYP. (.51) COLLECTOR ·j- .125(3.18) _ .1 1 5 ( 2 .9 2 )° 1 - .05(1.27) 500 (12.7) EMITTER .050 I- .03(76) I 11(1.27 , 267CPK. 2 . The radiation source is an IRED with a peak wavelength of 935 nm. 3. Angular response is , 0 + 250 iiS Fig. 1 Responsivity vs Angu lar D isplacem ent Fig. 2 Collector Current , Characteristics with SEP8505 1 0 -t 7 < fc = o 4 2 - e 03 1 0 .70 .40 .20 .1 - £ OJ _I 0.01


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PDF SDP8405 SEP8505/8525 SEP8705 SDP8405 -020SQ. SDP8406 SEP8506 SV70M SDP8406-003
Not Available

Abstract: No abstract text available
Text: ) 2 pic decimals ±0.020(0.51) I -'75 I <4.45>p _' .0 6 0 .I I ^ .0 6 0 (1 2 )' .5 (I.52) .0 3 0 (0.76) — r .225 (5.72) .0 4 5 (l.f-4) SO. 2 P L C S EMITTER_ U 4 , =100|. Ic -L 3 §9Ë §B È tiêÉ È 0M M sm m im 0 tr, tf Angular Response' 2 Rise And Fall , a peak wavelength of 9 35 nm. 2 . Angular response is defined as the total included angle between , mW < ) 1 -40°C to 85°C -40°C to 85°C 240°C Q Notes 1. Derate linearly from 2


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PDF SDP8406 SEP8506 SEP8706 SDP8406 00ES5MC
1997 - SDP8406

Abstract: SEP8506 SEP8706
Text: decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) DIM_017.ds4 120 h Honeywell reserves the , SWITCHING WAVEFORM cir_015.cdr Fig. 1 Responsivity vs Angular Displacement Fig. 2 gra , Light current - mA Relative response gra_036.ds4 400 600 800 1000 1200 6 4 2 1.0


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PDF SDP8406 SEP8506 SEP8706 INFRA-21 SDP8406 SEP8506
HOA0963-T51

Abstract: HOA0973-N55 SD5421-002 SDP8004-301 HOA0961-N51 HOA1879-012 HOA0973-N51 HOA0973N51 SD1420-002 HOA2001-001
Text: www.honeywell.com/sensing/ !"#$%& LED (mm) 1 ! ( ) @IF(mA) 2 24 0.20 24 24 0.35 , SE2470-002 ! !" !" TO-46 TO-46 1 935mm !" GaAs !"#$%& 2 ! ! ! , 100* 150 100* 150 2 .048(1.22) .160 (4.06) DIA. .137 (3.48) .015 (0.36) .153 , 2 .028(.71) .018 DIA. (.460) LEADS: 1. CATHODE (TAB) SE5450/5455/5470 Honeywell , :020-38791169 e-mail:jian.bo.zhou@honeywell.com http://www.honeywell.com/sensing 2 !"# LED ! ! 1


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PDF SE3450-011 SE3450-012 SE3450-013 SE3450-014 SE3455-001 SE3455-002 SE3455-003 SE3455-004 SE3470-001 SE3470-002 HOA0963-T51 HOA0973-N55 SD5421-002 SDP8004-301 HOA0961-N51 HOA1879-012 HOA0973-N51 HOA0973N51 SD1420-002 HOA2001-001
H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA9 HOA708-1 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: SD5443-3 S05443- 2 SD5410- 2 SDP8406-1 SDP8406-2 NONE Code Description B BC BC BC TRANS ASSY , -3 SD5443-4 SD2440-1 SD2440- 2 SD2440- 2 SD2440-4 NONE SDP8406-2 SDP8406-6 SDP8406-3 SDP8405-14 SDP8405-14 SDP8405-13 SD1440-1 SD1440- 2 S0P8406-3 SDP8406-2 SDP8406-1 SDP8406-1 NONE SD3443-1 SD5443-3 NONE NONE NONE , -3 SDP8406-2 SDP8406-2 SDP8406-1 SE1450-1 SE1450- 2 Code Description BE BE BC 8E BE BE BE BE BE BE B , -4 SD5443-4 SDP8406-2 SDP8106-1 SD2440- 2 NONE NONE SE3450-14 SE3450-14 NONE NONE NONE NONE NONE NONE NONE


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PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA9 HOA708-1 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
2440-002

Abstract: No abstract text available
Text: No file text available


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PDF SD1440-001 1440-002L 1440-003L 1440-004L SD5443-001 SD5491-001 SD5491 SDP8407-001 SDP8436-001 SDP8436-002 2440-002
Not Available

Abstract: No abstract text available
Text: ) Tolerance 3 pic decimals ±0.005(0.12) 2 pic decimals ±0.020(0.51) I 175 (4.45) .0 6 0 (1.521 I r .225 (5.72) .0 6 0 (1.52) .0 3 0 _ (0.76) 045(1.14) SO 2 PLCS CATHO DE H I flk ji AN O D E , Bandwidth Spectral Shift With Temperature Beam Angle* 2 * Radiation Rise And Fall Time SYMBOL H MIN 0.20 0.45 , /cm2into a 0.104(2.64) diameter aperture placed 0.535(13.6) from the lens tip. 2 Beam angle is defined as , Diode Fig. 1 Radiant Intensity vs Angular Displacement Fig. 2 Radiant Intensity vs Forward Current


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PDF SEP8706 SDP8406/8426 SDP8106 SDP8000/8600 SEP8706 SDP8406
1997 - SEP8706

Abstract: Infrared Emitting Diode SDP8106 SDP8406 SDP8000
Text: current. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals , Angular Displacement Fig. 2 gra_030.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 , 760 800 840 880 920 960 1000 2 1.0 0.6 0.4 0.1 0.01 Wavelength - nm


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PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8706 Infrared Emitting Diode SDP8106 SDP8000
Not Available

Abstract: No abstract text available
Text: n ce 3 pic decim a ls 2 pic d ecim a ls ±0.005(0.12) ±0.020(0.51) D IM .017C d r 120 , ise noted) PARAMETER Light Current S D P8 40 6-0 01 S D P 8 4 0 6 -0 0 2 S D P 8 4 0 6 -0 0 3 S D P 8 , ollector Breakdow n V oltag e Co lle cto r-E m itte r Saturation V ottage A n gu lar R e s p o n s e ( 2 R , = 1 0 0 0 Q Notes 1. The radiation source is an IRED with a peak wavelength of 935 nm. 2 . Angular , SWITCHING TIME TEST CIRCUIT V c c +5 V O C o lle c to r SWITCHING WAVEFORM Q + Fig. 2 C o lle


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PDF SDP8406 SDP8406\
1997 - SDP8106

Abstract: SDP8406 SEP8706
Text: DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) DIM , Fig. 1 Radiant Intensity vs Angular Displacement Fig. 2 gra_030.ds4 Normalized radiant , 1.0 800 840 880 920 960 1000 6 4 2 1.0 0.6 0.4 IF = 20 mA VCE = 5V TA =


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PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8706 SDP8106
SEP8506-002

Abstract: No abstract text available
Text: ) Tolerance 3 pic decimals ±0.005(0.12) 2 pic decimals ±0.020(0.51) I 060 (1.52) I j 175 ( 4 .4 5 ) .0 6 0 (1.52)' .0 3 0 ( 0 .7 6 ) ~* .0 4 5 (1.14) SO. 2 P L C S © . 2 2 5 (5 .7 2 ) (0.51 , lens tip. 2 . Beam angle is defined as the total included angle between the half intensity points , . Honeywell SEP8506 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement Fig. 2


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PDF SEP8506 SDP8406/8426 SDP8106 SDP8000/8600 SEP8506 SDP8406 SEP8506-002
1997 - SEP8506

Abstract: SDP8000 SDP8406 SDP8106
Text: . OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51 , Fig. 1 Radiant Intensity vs Angular Displacement Fig. 2 gra_030.ds4 Normalized radiant , 1.05 890 910 930 950 970 990 1010 6 4 2 1.0 0.6 0.4 IF = 20 mA VCE =


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PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 SDP8000 SDP8106
SEP8506-001

Abstract: SEP8506-002 SEP8506-003 SDP8106 SEP8506 infra red diode
Text: DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) INFRA , With Temperature Beam Angle( 2 ) Radiation Rise And Fall Time SYMBOL H MIN TYP 0.05 0.33 , lens tip. 2 . Beam angle is defined as the total included angle between the half intensity points , 39 SEP8506 GaAs Infrared Emitting Diode Radiant Intensity vs Angular Displacement Fig. 2 , Forward Current 6 4 2 1.0 0.6 0.4 IF = 20 mA VCE = 5 V TA = 25 °C 0.2 0.1 0.01 0.02


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PDF SEP8506 INFRA-20 SDP8406/8426 SDP8106 SDP8000/8600 INFRA-71 SEP8506 INFRA130 SEP8506-001 SEP8506-002 SEP8506-003 SDP8106 infra red diode
1997 - Infrared Phototransistor

Abstract: infrared diode Infrared Emitting Diode SDP8106 SDP8406 SEP8506
Text: . OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51 , . 2 gra_030.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Normalized radiant , 910 930 950 970 990 1010 2 1.0 0.6 0.4 0.1 0.01 Wavelength - nm


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PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 Infrared Phototransistor infrared diode Infrared Emitting Diode SDP8106
Not Available

Abstract: No abstract text available
Text: DIMENSIONS in inches (mm) Tolerance 3 pic decimals ±0.005(0.12) 2 pic decimals .I ^ -'75  , © .045(I.I4) SQ. 2 .225 (5.72) P LC S .500 , MIN. (I2.7I) r CATHODE — U j I — — ANODE IO O .IOO .015 ( 2 .5 4 ) (0.38) DIM_071.cdr 45 5 1 63 Q 0 D E E 46 1 1ÛG I , . Measured in m W /cm 2 into a 0 .1 0 4 (2.64) diam eter aperture placed 0 .535 (1 3 .6 ) from the lens tip. 2 . Beam angle is defined as the total included angle between the half intensity points. ABSOLUTE


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PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 SEP8506
Not Available

Abstract: No abstract text available
Text: DIMENSIONS in inches (mm) Tolerance 3 pic decimals ±0.005(0.12) 2 pic decimals ±0.020(0.51 ) DIM , 1.5 UNITS mW/cm2 TEST CONDITIONS I f = 2 0 mA V br Ak 3.0 935 50 0 .3 AAp/A t 0 tr, tf 50 0.7 V V nm nm nm/°C degr. M S If = 2 0 mA Ir=10 |JA lF=Constant Notes 1. Measured in m W /cm z into a 0 .1 0 4 (2.64) diam eter aperture placed 0 .535 (13.6) from the lens tip. 2 , ) Notes 1. Derate linearly from 2 5°C free-air tem perature a t the rate of 0 .7 8 m W /°C. SCHEMATIC A


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PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 SEP8506---
SEP8706-003

Abstract: SEP8706 SEP8706-001 SDP8106 SEP8706-002
Text: decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) INFRA-71.DIM DESCRIPTION The SEP8706 is an , Spectral Shift With Temperature Beam Angle( 2 ) Radiation Rise And Fall Time SYMBOL H MIN TYP , lens tip. 2 . Beam angle is defined as the total included angle between the half intensity points , 59 SEP8706 AlGaAs Infrared Emitting Diode Radiant Intensity vs Angular Displacement Fig. 2 , . 5 Radiant Intensity vs Forward Current 6 4 2 1.0 0.6 0.4 IF = 20 mA VCE = 5 V TA =


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PDF SEP8706 INFRA-20 SDP8406/8426 SDP8106 SDP8000/8600 INFRA-71 SEP8706 INFRA130 SEP8706-003 SEP8706-001 SDP8106 SEP8706-002
R840

Abstract: NFRA-20-TIF
Text: inches (mm) Tolerance 3 pic decimals ±0.005(0.12) 2 pic decimate ±0.020(0.51 ) u ; ' ` ^ ° o -a 1 , TYP MAX UNITS mW/cm2 TEST CONDITIONS I f = 2 0 mA 2.6 1.7 V V nm If=20 mA lns10 |jA Vf , . 2 . Beam angle is defined as the total included angle between the half intensity points. ABSOLUTE , <1 1 -40°C to 85°C -40°C to 85°C 240°C SCHEMATIC A node Q Notes 1. Derate linearly from 2 5 'C , 0.1 - \ % J~ - 1 - - - -t - i 00 '4 5 -30 *15 0 +15 +30 +45 +60 20 30 40 50 100 Fig. 2


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PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 NFRA-20-TIF SEP8706 R840 NFRA-20-TIF
KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: SDP8406-3 SDP8406-2 SDP8406-1 SOP8406-1 NONE S03443-1 SD5443-3 NONE NONE NONF NONE HOA1874-1 1 HOA1874 , SDP8405-1 SDP8406-1 SDP8406-3 SDP8406-2 SDP8406-2 SDP8406-1 S E I 450-1 SE1450- 2 SE1450-3 SE1450-4 S E34 , -4 SDP8406-2 SDP8106-1 SD2440- 2 NONE NONE SE3450-14 SE3450-14 NONE NONE NONE NONE NONE NONE Code , SD5410-3 SD5410- 2 SD5420- 2 SD5314-301 SD3421- 2 SD2440- 2 SD2440-3 SD2440-4 S 02440-4 SDP8406-2 SDP8106 , /N H 0A0871-N55 HOA1872-12 H 0A 1872-1 H0A1875- 2 CALL C ALL H0A1872-13 H0A1875-3 C A LL C A LL NONE


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PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
dual Phototransistor mouse

Abstract: quadrature mouse phototransistor HLC2705 HLC2705-001 mouse Phototransistor SE5455-003 SE5470-004 hlc led MOUSE ENCODER output SE3455-003
Text: Output Logic 2 Tach, 3-20 µSec Pulse Inverter Resolution (mm) 0.46 0.03 Package Style Chassis Mount ( 2


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PDF SE2460-003, SE2470-002) SE3455-001, SE5455-003, SE5470-004, SE3470-003) SE2470-002 dual Phototransistor mouse quadrature mouse phototransistor HLC2705 HLC2705-001 mouse Phototransistor SE5455-003 SE5470-004 hlc led MOUSE ENCODER output SE3455-003
1998 - SEP8506-001

Abstract: SDP8106 SDP8406 SEP8506 SDP8000
Text: :/// ( 2 of 4)14/03/2005 02


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PDF SEP8506-001 SDP8406 SDP8106 SDP8000/8600 SEP8506 20and 20Settings/rabab/Desktop/Datasheet 20SEP8506-001 SEP8506-001 SDP8406 SDP8000
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