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SDP8405-209
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SDP8405-210
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SDP8405-206
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SDP8405-2 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
SDP8405-2 SDP8405-2 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF

SDP8405-2 Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: ) Tolerance 3 pic decimals ±0.005(0.12) 2 pic decimals ±0.020(0.51) ¿00(5.08) — .020SQ.LEAD TYP , lamp operating at a color temperature of 2870°K. 2 . The radiation source is an IRED with a peak , Fig. 1 Q. (n C B < u IE Responsivity vs Angular Displacement Fig. 2 Collector , f lŒ ÿL = 7— +- H + l +l f f lF= 25 m A-IHHtt r r i r r T A= 2 5 ° c - | T in 1- b =


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PDF SDP8405 SEP8505 SEP8705 SDP8405 020SQ SEP8505 00E2545
Not Available

Abstract: No abstract text available
Text: (0.12) 2 pic decimals ±0.020(0.51) .200(5 081 - 020SQ LEAD TYP T sT T 050 £ (1271 , temperature of 2870°K. 2 . The radiation source is an IRED with a peak wavelength of 935 nm. 3. Angular , Responsivity vs Angular Displacement i eo £ Fig. 2 Collector Current vs Ambient Temperature A ngular


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PDF SDP8405 SEP8505/8525 SEP8705 SDP8405 020SQ SEP8505
SDP8405

Abstract: SDP8405-001 SDP8405-002 SDP8405-003 SDP8405-011 SDP8405-012 SDP8405-013 SEP8705
Text: ) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) DESCRIPTION The SDP8405 is an NPN , /cm2( 2 ) 0.46 0.92 1.85 100 30 5.0 0.4 Ø tr, tf 20 15 nA V V V VCE=15 V, H , °K. 2 . The radiation source is an IRED with a peak wavelength of 935 nm. 3. Angular response is defined , ) SCHEMATIC Collector 30 V 5V 70 mW(1) -40°C to 85°C -40°C to 85°C 240°C INFRA- 2 .SCH Notes 1 , 0.2 0.1 0.0 -40 -30 -20 -10 Fig. 3 tr t Fig. 2 INFRA-47.GRA Relative response


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PDF SDP8405 INFRA-22 SEP8505/8525 SEP8705 SDP8405 INFRA-29 INFRA-36 SEP8505 SDP8405-001 SDP8405-002 SDP8405-003 SDP8405-011 SDP8405-012 SDP8405-013
TRANSISTOR K 135

Abstract: SDP8405-14 transistor pt 42 transistor SDP8405-13 TRANSISTOR GUIDE transistor 650 SDP8426-2
Text: 41 PT V r Drawing 24 Page 41 < SDP8405-1 SDP8405-2 SDP8405-3 SDP8405-11 SDP8405-12 SDP8405-13 SDP8405-14 SDP8425-1 SDP8425- 2 SDP8106-1 SDP8406-1 SDP8406- 2 SDP8406-3 SDP8406-4 SDP8426-1 SDP8426- 2 , 1.00 7.00 1.00 0.15 1.80 3.40 6.40 0.15 1.80 0.10 14.00 14.00 0.46 0.92 1.85 units V« Note 2 mA 5.0 mA , between half-sensitivity points measured with a point source of radiation. 2 . Bias level is expressed in


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PDF SDP8405-1 SDP8405-2 SDP8405-3 SDP8405-11 SDP8405-12 SDP8405-13 SDP8405-14 SDP8425-1 SDP8425-2 SDP8106-1 TRANSISTOR K 135 transistor pt 42 transistor TRANSISTOR GUIDE transistor 650 SDP8426-2
Not Available

Abstract: No abstract text available
Text: (0.12) 2 pic decimals ±0.020(0.51) 200(5.08) 180(4.57) ' .05(1.27) COLLECTOR : _ l 02 0S Q LEAD TYP ! < :5 '> 050 I1 - 2 7 > ; " " 155 I (3 9 4 ) DIA. .250 ' (6:35) " MAX DIM , temperature of 2870°K. 2 . The radiation source is an IRED with a peak wavelength of 935 nm. 3- Angular , WAVEFORM o+ GaAs Emitter -T T X i 250 nS Ô - Emitter O. .R l . 1000Q % Fig. 2 Collector , tt im = ée y r T» = 2 5 ° c - | T i ï ï =j y ± i j = i i± Ë E El îlîlffi 3 3 E Effi fi - +- H +


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PDF SDP8405 SEP8505 SEP8705 SDP8405
SV70M

Abstract: SDP8406-003
Text: ±0.005(0,12) 2 pic decimals ±0.020(0.51) .200(5.08) .180(4.57) - -020SQ. LEADTYP. (.51) COLLECTOR ·j- .125(3.18) _ .1 1 5 ( 2 .9 2 )° 1 - .05(1.27) 500 (12.7) EMITTER .050 I- .03(76) I 11(1.27 , 267CPK. 2 . The radiation source is an IRED with a peak wavelength of 935 nm. 3. Angular response is , 0 + 250 iiS Fig. 1 Responsivity vs Angu lar D isplacem ent Fig. 2 Collector Current , Characteristics with SEP8505 1 0 -t 7 < fc = o 4 2 - e 03 1 0 .70 .40 .20 .1 - £ OJ _I 0.01


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PDF SDP8405 SEP8505/8525 SEP8705 SDP8405 -020SQ. SDP8406 SEP8506 SV70M SDP8406-003
1997 - simple phototransistor

Abstract: all datasheet phototransistor phototransistor 600 nm Infrared Phototransistor led and phototransistor simple circuit SDP8405 SEP8505 SEP8705
Text: DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) .200 , TIME TEST CIRCUIT SWITCHING WAVEFORM cir_015.cdr Responsivity vs Angular Displacement Fig. 2 , = 25 mA TA = 25 °C 4 2 1 0.7 0.4 0.2 0.1 400 600 800 1000 1200 0.01


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PDF SDP8405 SEP8505 SEP8705 INFRA-22 SDP8405 SEP8505 simple phototransistor all datasheet phototransistor phototransistor 600 nm Infrared Phototransistor led and phototransistor simple circuit
1997 - simple phototransistor

Abstract: SDP8405 SEP8505 SEP8705
Text: inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) .200(5.08) .180 , Displacement Fig. 2 gra_047.ds4 Collector Current vs Ambient Temperature Normalized collector , = 25 mA TA = 25 °C 4 2 1 0.7 0.4 0.2 0.1 400 600 800 1000 1200 0.01


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PDF SDP8405 SEP8505 SEP8705 INFRA-22 SDP8405 SEP8505 simple phototransistor
HOA0963-T51

Abstract: HOA0973-N55 SD5421-002 SDP8004-301 HOA0961-N51 HOA1879-012 HOA0973-N51 HOA0973N51 SD1420-002 HOA2001-001
Text: www.honeywell.com/sensing/ !"#$%& LED (mm) 1 ! ( ) @IF(mA) 2 24 0.20 24 24 0.35 , SE2470-002 ! !" !" TO-46 TO-46 1 935mm !" GaAs !"#$%& 2 ! ! ! , 100* 150 100* 150 2 .048(1.22) .160 (4.06) DIA. .137 (3.48) .015 (0.36) .153 , 2 .028(.71) .018 DIA. (.460) LEADS: 1. CATHODE (TAB) SE5450/5455/5470 Honeywell , :020-38791169 e-mail:jian.bo.zhou@honeywell.com http://www.honeywell.com/sensing 2 !"# LED ! ! 1


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PDF SE3450-011 SE3450-012 SE3450-013 SE3450-014 SE3455-001 SE3455-002 SE3455-003 SE3455-004 SE3470-001 SE3470-002 HOA0963-T51 HOA0973-N55 SD5421-002 SDP8004-301 HOA0961-N51 HOA1879-012 HOA0973-N51 HOA0973N51 SD1420-002 HOA2001-001
2440-002

Abstract: No abstract text available
Text: No file text available


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PDF SD1440-001 1440-002L 1440-003L 1440-004L SD5443-001 SD5491-001 SD5491 SDP8407-001 SDP8436-001 SDP8436-002 2440-002
n11a

Abstract: SDP8405 SEP8505 SEP8705 t-1 ir phototransistor
Text: decimals ±jQ0CS(0.12j 2 pJc decimals ±jQQ20(0.51) iw;-H:r| it;, .11! iw, - ol.; ■( â , nwiH|a B » 1 Mutait Rte Aid FUI T1h Ir, fer IB l» Vogrf V, hj-1 nA ffcHOttQ 1. TIKI 2 , – ! O.IËrn'iY'C. SCHEMATIC CAntf 0 K 0 Bmtfâi & m m m m m 2 îa m ? m SlStflL 101 s q1


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PDF SDP8405 SEP8505 SEP8705 jQQ20 755-a B/B32 m/8321 n11a SDP8405 t-1 ir phototransistor
H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA9 HOA708-1 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Honeywell P/N NONE SDP8405-2 SD3443-1 SD3443-1 SD3443- 2 S03443-3 S03443-3 SD3443-3 SD5491- 2 SD5491-3 SD5491 , SD5443-3 SD5443-3 SD5443-4 SDP8405-1 SDP8405-2 SDP8405-3 SDP8405-3 SDP8405-2 SDP8405-1 SDP8406-1 SDP8406 , 5082-4204 Honeywell P/N H0A0871-N55 H0A1872-12 H0A1872-1 HOA1875- 2 CALL CALL HOA1872-13 HOA1B75-3 CALL , NONE NONE HOA149-1 CALL CALL SD2440-1 SD2440- 2 SD2440-3 SD2440-4 SE5455-4 SE3455-4 SE5455-4 H0A0871-T55 , HOA0970-N55 HOA0970-T55 HOA0971-N55 HOA0971-T55 NONE NONE NONE NONE NONE NONE SD3443- 2 SD3443-3 SD3443


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PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA9 HOA708-1 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
1997 - SDP8105

Abstract: SDP8405 SEP8705
Text: ) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) .200 (5.08) .180 (4.57) .03 , Angular Displacement Fig. 2 gra_027.ds4 Normalized radiant intensity Relative intensity 1.0 , 960 1000 VCE = 5 V IF = 25 mA TA = 25 °C 4 2 1 0.7 0.4 0.2 0.1 0.01 Wavelength -


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PDF SEP8705 SDP8405 SDP8105 INFRA-55 SEP8705 SDP8105
KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: 72 CLED1 Honeywell P/N S0P8406- 2 NONE NONE SDP8405-2 SD 3443-1 S03443-1 SD3443- 2 S03443-3 SD3443 , S05443-1 SD5443-1 SD5443- 2 SD5443-3 SD5443-3 S05443-4 SDP8405-1 SDP8405-2 SDP8405-3 SDPB405-3 SDP8405-2 , /N H 0A0871-N55 HOA1872-12 H 0A 1872-1 H0A1875- 2 CALL C ALL H0A1872-13 H0A1875-3 C A LL C A LL NONE NONE NONE NONE H O A090M 2 H0A0901-12 C ALL C ALL NONE NONE NONE NONE C ALL CALL NONE NONE NONE NONE NONE H0A149-1 C ALL C ALL S02440-1 SD2440- 2 SD2440-3 SD2440-4 SE5455-4 SE3455-4 SE5455-4 H OA0871-T55


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PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
SEP8705

Abstract: No abstract text available
Text: polarity identification. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 pic decimals ±0.005(0.12) 2 pic decimals ±0.020(0.51) 200 ( 5 .08 ) . 115 ( 2 .92 ) Honeywell H oneyw ell reserves th e rig h t , 0.7 V br 6X AA,p/AT 0 t r . tl 3.0 V V nm nm nm/°C degr. US I f = 2 0 mA Ir=10 hA , (10.16) from the lens tip. 2 . Beam angle is defined as the total included angle between the half , . 2 Radiant Intensity vs Forward Current A ngular displacem ent - degrees Forward current - mA


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PDF SEP8705 SDP8405/8425 SDP8105 SEP8705 SDP8405
1997 - SEP8505

Abstract: infrared diode simple phototransistor Infrared Emitting Diode SDP8405 SDP8105
Text: identification. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals , Radiant Intensity vs Angular Displacement Fig. 2 gra_027.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 , °C 4 2 1 0.7 0.4 0.2 0.1 0.01 Wavelength - nm © Honeywell Inc. 10 10 7 0.9


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PDF SEP8505 SDP8405 SDP8105 INFRA-55 SEP8505 infrared diode simple phototransistor Infrared Emitting Diode SDP8105
npn C 1740

Abstract: HOA0961-N51 SDP8436-003 HOA0971-N51 SD1440-004L SDP8405-003 sd3443-003 SDP8406-003 SD5491-004 HOA62
Text: K Typ. Pull-Up Res. NPN with 10 K Typ. Pull-Up Res. NPN with 2 K Typ. Pull-Up Res. Infrared Emitter , 4.5 to 12.0 2.0 to 7.0 Mounting 0 Tabs 0 Tabs 2 Tabs 1 Hole 1 Hole Termination Leaded Leaded 24 , TO-46, Dome Lensed TO-18, Dome Lensed TO-46, Flat Window Rise/Fall Time µSec 15 2 15 EACH 1-24 3.66


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PDF HOA0961-N51 HOA6985-T51 ConnectorizeD2420-002 SDP8105-001 SD5410-002 SD3410-002 SD1440-004L SD2420-002 SDP8105-001 SD5410-002 npn C 1740 SDP8436-003 HOA0971-N51 SDP8405-003 sd3443-003 SDP8406-003 SD5491-004 HOA62
1997 - SDP8105

Abstract: SDP8405 SEP8505
Text: DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) .200 , Fig. 1 Radiant Intensity vs Angular Displacement Fig. 2 gra_027.ds4 Normalized radiant , 4 2 1 0.7 0.4 0.2 0.1 0.01 Wavelength - nm 38 30 1.40 1.35 Fig. 5 20


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PDF SEP8505 SDP8405 SDP8105 INFRA-55 SEP8505 SDP8105
Not Available

Abstract: No abstract text available
Text: DIMENSIONS in inches (mm) Tolerance 3 pic decimals ±0.005(0.12) 2 pic decimals ±0.020(0.51) ^ f— .020 SQ. LEAD TYP. T s ïj" — 05(1.27) .050 CATHODE s CÖ 2 ) 7 i, o -)- .125 (3.18) .115 ( 2 .9 2 )D - r t .250 '( 6 . 3 5 ) “ MAX. DIM_101.ds4 >4551830 , lens tip. 2 . Beam angle is defined as the total included angle between the half intensity points , Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement 1.0 0.9 Fig. 2 1 1


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PDF SEP8505 SDP8405 SDP8105 SEP8505
SEP8705-003

Abstract: SDP8105 SEP8705 SEP8705-001 SEP8705-002
Text: SDP8105 photodarlington OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 , With Temperature Beam Angle( 2 ) Radiation Rise And Fall Time SYMBOL H MIN TYP 0.54 1.4 , lens tip. 2 . Beam angle is defined as the total included angle between the half intensity points , 55 SEP8705 AlGaAs Infrared Emitting Diode Radiant Intensity vs Angular Displacement Fig. 2 , Characteristics with SDP8405 10 7 4 VCE = 5 V IF = 25 mA TA = 25 °C 2 1 0.7 0.4 0.2 0.1 0.01


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PDF SEP8705 INFRA-55 SDP8405/8425 SDP8105 SEP8705 INFRA130 SEP8705-003 SDP8105 SEP8705-001 SEP8705-002
infra red diode

Abstract: SEP8505-003 SEP8505-001 SDP8105 SEP8505 SEP8505-002 infra red light emitting diode
Text: ) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) DESCRIPTION The SEP8505 is a , With Temperature Beam Angle( 2 ) Radiation Rise And Fall Time SYMBOL H MIN TYP 0.5 1.0 , lens tip. 2 . Beam angle is defined as the total included angle between the half intensity points , 35 SEP8505 GaAs Infrared Emitting Diode Radiant Intensity vs Angular Displacement Fig. 2 , SDP8405 10 7 4 VCE = 5 V IF = 25 mA TA = 25 °C 2 1 0.7 0.4 0.2 0.1 0.01 0.02 0.04 0.1


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PDF SEP8505 INFRA-55 SDP8405/8425 SDP8105 SEP8505 INFRA130 infra red diode SEP8505-003 SEP8505-001 SDP8105 SEP8505-002 infra red light emitting diode
Not Available

Abstract: No abstract text available
Text: pic decimals ±0.005(0.12) 2 pic decimals ±0.020(0.51 ) .200 (5.08) .iao "(4 .57 ) — .0 , (6.35) " (12.7) DIM_101.ds4 4 5 5 1 8 3 0 0 0 2 2 4 3 8 53 5 ■Honeywell Honeywell , 0.081 (2.05) diameter aperture placed 0.40(10.16) from the lens tip. 2 . Beam angle is defined as the , . 1 1. 0 Fig. 2 Radiant Intensity vs Forward Current - S. C O § o -30


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PDF SEP8705 SDP8405 SDP8105 SEP8705 M551A3P MSS163D DD52Mâ
Not Available

Abstract: No abstract text available
Text: polarity identification. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 pic decimals ±0.005(0.12) 2 pic , Spectral Bandwidth Spectral Shift With Temperature Beam A n g le ( 2 ) Radiation Rise And Fall Time SYMBOL H , (10.16) from the lens tip. 2 . Beam angle is defined as the total included angle between the half , -40 -30 -20 -10 Fig. 2 Radiant Intensity vs Forward Current ElEE É £ c o > C O CD IX c >. , 40 50 100 Forward current - m A Fig. 4 2 oi « Forward Voltage vs Temperature - 0 +10 +20 +30


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PDF SEP8705 SDP8405 SDP8105 SEP8705 130ds4
1997 - SEP8705

Abstract: simple phototransistor SDP8105 SDP8405
Text: (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) .200 (5.08) .180 , 1997 SEP8705 AlGaAs Infrared Emitting Diode Radiant Intensity vs Angular Displacement Fig. 2 , 4 2 1 0.7 0.4 0.2 0.1 0.01 Wavelength - nm © Honeywell Inc. 10 10 7 0.9 0.8


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PDF SEP8705 SDP8405 SDP8105 INFRA-55 SEP8705 simple phototransistor SDP8105
HOA0149

Abstract: HOA0149-001 SDP8405 SEP8505 optical reflective sensor
Text: No file text available


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PDF HOA0149-001 HOA0149 HOA0149 SEP8505 SDP8405. HOA0149-001 SDP8405 optical reflective sensor
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