The Datasheet Archive

SD1420-01 datasheet (3)

Part Manufacturer Description Type PDF
SD1420-01 Advanced Power Technology RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Original PDF
SD1420-01 Microsemi RF NPN Transistor Scan PDF
SD1420-01 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF

SD1420-01 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - NPN planar RF transistor

Abstract:
Text: SD1420-01 RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features · · · · · , = 0.9 W MIN. 9.5 dB GAIN DESCRIPTION: The SD1420-01 is a gold metallized epitaxial silicon NPN , SD1420-01 is also available in a stud package as the SD1420. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 , contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. SD1420-01 , factory direct. Units pF SD1420-01 PACKAGE MECHANICAL DATA Advanced Power Technology


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PDF SD1420-01 SD1420-01 SD1420. NPN planar RF transistor SD1420
Not Available

Abstract:
Text: SD1420-01 RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features • • â , OPERATION POUT = 0.9 W MIN. 9.5 dB GAIN DE SCRIPTIO N: The SD1420-01 is a gold metallized epitaxial , applications. The SD1420-01 is also available in a stud package as the SD1420. ABSO LUTEMAXIMUM RATING , factory direct. SD1420-01 E CTRICAL SPE LE CIFICATIONS (Tcase = 25° C) STATIC Symbol Test , at WWW.ADVANCEDPOWER.COM or contact our factory direct. Units pF SD1420-01 PACKAG ME E


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PDF SD1420-01 SD1420-01 SD1420.
di42o

Abstract:
Text: available in a studless package as the SD1420-01. ABSOLUTE MAXIMUM RATINGS (TcaEe = 25°C) Symbol


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PDF 860-960MHZ 960MHz SD1420 SD1420 SD1423. di42o 25CC M122 SD1420-01 SD1423
1994 - M122

Abstract:
Text: also available in a studless package as the SD1420-01. 1. Collector 2. Emitter 3. Base 4


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PDF SD1420 SD1420 SD1420-01. M122 SD1420-01
Not Available

Abstract:
Text: package as the SD1420-01. ABSOLUTE MAXIMUM RATINGS (Tease = 25°C) Symbol V cbo VcEO V ebo lc P d is s Tj


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PDF SD1420 SD1420 SD1420-01.
MS1601

Abstract:
Text: UHF Applications Cellular Base Station 860 - 960 MHz PART NO. FREQ. (MHz) SD1420-01 MS1600 MS1601 MS1451 MS1452 MS1453 MS 1577 MS 1551 MS 1528 MS1529 MS 1454 MS 1530 MS1583 MS1578 860-960 860-960 860-960 860-960 860-960 860-960 860-900 860-960 860-900 915-960 860-960 860-960 900-960 860-900 Pout Min (W) 0.9 2.1 6 15 30 30 40 60 120 100 30 60 100 150 Pin (W) 0.1 0.27 0.6 2.4 5.3 5.3 10 12 30 25 5.3 10.5 10 24 GAIN Min (dB) 9.5 9 10 8 7.5 7.5 6 7 6 6 7.5 7.5 10 8 BIAS Vce (V) 24 24 24


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PDF SD1420-01 MS1600 MS1601 MS1451 MS1452 MS1453 MS1529 MS1583 MS1578 2x250
M142

Abstract:
Text: ) gain min (dB) Rth(|-c) max rc/w) MAX (pf) 8TVLE vce (v) Mj (ma) SD1420-01 * 860-960 0.9 0.10


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PDF SD1414 SD1400-02 SD1496 SD1426 SD1420* SD1398 SD1423 SD1424 SD1425 SD4017 M142 M118 m169 M175 SD1400-03 M208
1994 - M122

Abstract:
Text: also available in a studless package as the SD1420-01. 1. Collector 2. Emitter 3. Base 4


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PDF SD1420 SD1420 SD1420-01. M122 SD1420-01
SD1420

Abstract:
Text: 0.2 0.1 0.0 Relative response cir_002.cdr Dark Current vs Temperature 100.0 V R = 20 V H=0 10.0 1.0 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 -55 , Spectral Responsivity gra_036.ds4 Relative response 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1


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PDF SD1420 SE1450 SE1470 INFRA-63 SD1420 SD1420-XXXL) SD1420-XXX SD1420-XXX SE1450
Not Available

Abstract:
Text: Gl SGS-THOMSON SD1420 I1L[ RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS ■860 - 960 MHz ■24 VOLTS > COMMON EMITTER . GOLD METALLIZATION . CLASS A LINEAR OPERATION ■P o u t = 2.1 W MIN. WITH 9.0 dB GAIN PIN CONNECTION DESCRIPTION The SD1420 is a gold metallized epitaxial silicon NPN planar transistor designed for high linearity Class A operation Cellular Base Station applica­ tions. The SD1420 is also available in a studless package as the SD1420-01.


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PDF SD1420 SD1420 SD1420-01.
1997 - H 122 TIF

Abstract:
Text: 0.2 0.1 0.0 Relative response cir_002.cdr Dark Current vs Temperature 100.0 V R = 20 V H=0 10.0 1.0 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 -55 , Spectral Responsivity gra_036.ds4 Relative response 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1


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PDF SD1420 SE1450 SE1470 INFRA-63 SD1420 SD1420-XXXL) SD1420-XXX H 122 TIF SE1450 silicon photodiode spectrally matched photodiode
1997 - SD1420

Abstract:
Text: 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Dark current - nA Relative response Fig. 1 cir , V H=0 10.0 1.0 0.1 0.0 -55 Angular displacement - degrees Fig. 3 gra_035.ds4 -25 , _036.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 400 600 800 1000 1200 Wavelength - nm All


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PDF SD1420 SE1450 SE1470 INFRA-63 SD1420 SD1420-XXXL) SD1420-XXX SE1450
Not Available

Abstract:
Text: No file text available


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PDF SD1420 SE1450 SE1470 SD1420 SD1420-XXXL) SD1420-XXX SD1420-XXXL
icom sc 1025

Abstract:
Text: M 80610-018 A M 0710-300 SD1495 SD1496 SD 1400-02 SD1420-01 ; SD 1400-03 SD 1495-03 S D 1496-03 SD1550 SD1512 M SC 81069 SD1853- 01 SD1171 S D 1520-08 S D 1520-01 S D 1524-01 SD 1526-01 SD 1526-08 M SC , 10.6 1.5 0.1 1.6 6 10 1.5 0.1 0.2 1.57 0.025 0.1 0.3 0.55 0.55 1.5 1.5 13 13 13 13 13 30 60 0.35 10 20


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PDF SD1495 SD1496 SD1420-01 SD1550 SD1512 SD1853-01 SD1171 1015M 1075M icom sc 1025 UHF UHF Transistors Avionics 81416-012 M105 MSC1075M MSC1090M
1420-002L

Abstract:
Text: No file text available


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PDF SD1420 SE1450 SE1470 SD1420-XXXL) SD1420-XXX 1420-002L ly062
transistor M122

Abstract:
Text: No file text available


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PDF SD142Ö 860-96QMHZ 960MHz SD142Q SD1420 980MH2 SD1420 transistor M122
1997 - GaAs 1000 nm Infrared Emitting Diode

Abstract:
Text: . 2 gra_001.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Normalized radiant , - degrees Fig. 3 gra_002.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 870 890 910 930 950 970 990 1010 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Wavelength - nm © Honeywell Inc , output 10 5.0 IF = 40 mA IF = 30 mA IF = 20 mA 2.0 1.0 0.5 IF = 10 mA 0.2 0.1 -50


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PDF SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Emitting Diode SD1420
Not Available

Abstract:
Text: No file text available


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PDF SD1420 860-960MHz S60-960MH2 D1420
1997 - SE1470

Abstract:
Text: Fig. 2 gra_007.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Normalized radiant , Current 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 +10 +20 +30 +40 4.0 Fig. 4 , Normalized light current 0.7 0.6 0.5 0.4 0.3 0.2 0.1 50 75 100 Coupling Characteristics , mA IF = 20 mA 2.0 1.0 0.5 IF = 10 mA 0.2 0.1 -50 -25 0 +25 +50 +75 +100


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PDF SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) SD1420
HOA0963-T51

Abstract:
Text: !"#$%&' !"#$%&'()*+, !"# !"#$%&'()*+ !"#$%&' ! !"#$%&'()*+,-./ 01 A !"!#$%&"!#'()*+ , SDP8314, !" !" SDP8614,10K ! SDP8304 SDP8371 SDP8600/ 01 /02 ! SD5600/5620 SDP8610/11/12 , (), 3 .090(2.3) !"#$%&'()*+, !"#$%&'()*+,-./ 01 .083(2.1) .05(1.27) 3 PLCS .075(1.91 , !"NPN !"#$%&' !"# !"#$%&'&()*+, TTL !"# LED !"#$% !"#$%&'()*+,-./ 01 !"#$


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PDF SE3450-011 SE3450-012 SE3450-013 SE3450-014 SE3455-001 SE3455-002 SE3455-003 SE3455-004 SE3470-001 SE3470-002 HOA0963-T51 HOA0973-N55 SD5421-002 SDP8004-301 HOA0961-N51 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002
SD-5443-3

Abstract:
Text: No file text available


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PDF SD1410-1 SD1410-2 SD1410-3 SD1410-4 SD1420-2 SD1440-1 SD1440-2 SD1440-3 SD1440 SD5443-4 SD-5443-3 SD5491-2 SD5491-4 transistor 24 SD5491-5 sd5410-3 SD5443-2 sd3410-3 SD3410-1 SD-5421-2
Not Available

Abstract:
Text: No file text available


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PDF SD1414 SD1420* SD1398 SD1423 SD1424 SD1425 SD4017 SD4701 SD1650 SD4600
1997 - GaAs 1000 nm Infrared Diode,

Abstract:
Text: intensity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 Radiant , 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 870 -25 Temperature - °C Forward current - , 950 970 990 1010 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Wavelength - nm 10 , displacement - degrees Fig. 3 gra_002.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 , 40 mA IF = 30 mA IF = 20 mA 2.0 1.0 0.5 IF = 10 mA 0.2 0.1 -50 -25 0 +25 +50


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PDF SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Diode, SD1420
1997 - SD1410

Abstract:
Text: intensity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 Radiant , 0.4 0.3 0.2 0.1 0.0 760 0 Temperature - °C Forward current - mA Relative intensity , 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Lens-to-lens seperation - inches , mA 2.0 1.0 0.5 IF = 10 mA 0.2 0.1 -50 -25 0 +25 +50 +75 +100 TA -


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PDF SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) SD1420 SE1470-XXX
SE1470

Abstract:
Text: - 079(2 01 ) 076(1 93) 122(3 10) 106(2 69} t 0 -' } SE1470-XXXL 020 [y 062(1.57) D IA C Al H OD t (C A S f) . ANODE y ' , I - 020 i 1051) D IA -· - i ° W 01 ) ntA 122(3 10) 106(2


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PDF SE1470 SD1420 SD1440 SD1410 SE1470 SE1470-XXXL) SD1440 SE1470-002L
Supplyframe Tracking Pixel