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Part Manufacturer Description Datasheet Download Buy Part
BQ20Z655EVM Texas Instruments bq20z655EVM and bq34z651EVM SBS 1.1 Impedance Track Technology Enabled EVM
BQ30Z50DBT Texas Instruments SBS 1.1 compliant Gas Gauge with Impedance TrackT version 3.5 38-TSSOP
BQ2084DBT-V133G4 Texas Instruments SBS V1.1 Compliant Gas Gauge For Use With The bq29312 38-TSSOP -20 to 85
BQ20Z80DBT-V102 Texas Instruments SBS 1.1-Compliant Gas Gauge Enabled w/Impedance Track Tech 38-TSSOP -40 to 85
BQ20Z95DBTR Texas Instruments SBS 1.1-Compliant Gas Gauge Enabled w/Impedance Track 44-TSSOP -40 to 85
BQ2083DBT-V1P3 Texas Instruments SBS-Compliant Gas Gauge for Use with bq29311 38-TSSOP -20 to 85

SBS thyristor Datasheets Context Search

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diac SBS 14

Abstract: DIAC EQUIVALENT circuit DIAC 1n5760 DIAC EQUIVALENT SBS thyristor 1N5760 DIAC application MOTOROLA SCR CIRCUITS BY USING 2N6027 DIAC thyristor application
Text: contrast the properties of alternative trigger devices. The closest equivalent to the diac is the SBS . DIAC REPLACEMENT WITH SBS Figures 11 through 14 contrast trigger performance in a simple phase control , gate damping resistance is used. The short high amplitude pulse (Figure 12) of the SBS used without , current above the latching and holding value. To convert to a MBS4991 SBS (Figure 2): R2 = y^vp = 9^7s27 , angle because of the lower SBS voltage. ALTERNATE METHODS OF TRIGGERING Trigger performance is


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PDF AN964/D AN964/D diac SBS 14 DIAC EQUIVALENT circuit DIAC 1n5760 DIAC EQUIVALENT SBS thyristor 1N5760 DIAC application MOTOROLA SCR CIRCUITS BY USING 2N6027 DIAC thyristor application
2n2646 equivalent

Abstract: 2N2646 triac phase control EQUIVALENT 2N1671 2N4991 2N602B SBS thyristor four-layer diode 3n84 2N4987
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH ( SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS ) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"


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PDF 2N489-494â 2N2646-47â 2n2646 equivalent 2N2646 triac phase control EQUIVALENT 2N1671 2N4991 2N602B SBS thyristor four-layer diode 3n84 2N4987
1999 - Not Available

Abstract: No abstract text available
Text: package is readily adaptable for use in automatic insertion equipment. • • • • • SBS , Tstg –65 to +150 °C REV 2 Motorola Thyristor Device Data © Motorola, Inc. 1995 1 , Motorola Thyristor Device Data MBS4991 MBS4992 MBS4993 FIGURE 3 – HOLDING CURRENT versus TEMPERATURE , Motorola Thyristor Device Data D.U.T. RL 0 V0 3 MBS4991 MBS4992 MBS4993 FIGURE 8 â , VF2 –I CHARACTERISTICS With the SBS in conduction and the relay contacts open, close the


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PDF MBS4991/D MBS4991 MBS4992 MBS4993 O-226AA MBS4991/D*
1995 - MBS4991 equivalent

Abstract: MBS4992 equivalent MBS4991 MBS4992 SBS thyristor triac phase control Thyristor Device Data motorola 5Bp power control MBS4993 Gate Turn-off Thyristor
Text: package is readily adaptable for use in automatic insertion equipment. · · · · · SBS (PLASTIC , +150 °C REV 2 Motorola Thyristor Device Data © Motorola, Inc. 1995 1 MBS4991 MBS4992 , Motorola Thyristor Device Data MBS4991 MBS4992 MBS4993 FIGURE 3 ­ HOLDING CURRENT versus TEMPERATURE , VOLTAGE TEST CIRCUIT Cc 10 K 15 V Vin 10 ms MIN Motorola Thyristor Device Data D.U.T , .) +V IS2 D.U.T. VS2 IB1 IH2 MT1 VF2 ­I CHARACTERISTICS With the SBS in conduction


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PDF MBS4991/D MBS4991 MBS4992 MBS4993 O-226AA MBS4991/D* MBS4991 equivalent MBS4992 equivalent MBS4991 MBS4992 SBS thyristor triac phase control Thyristor Device Data motorola 5Bp power control MBS4993 Gate Turn-off Thyristor
GE TRIAC SC40B

Abstract: 2n4992 3N84 transistor 2n4992 SC40B 2N4992 equivalent SBS thyristor 2n2646 equivalent triac 9012 Triac 50 amp 250 volt
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH ( SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS ) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"


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PDF 2N489-494â 2N2646-47â 2N4992 SC40B GE TRIAC SC40B 3N84 transistor 2n4992 SC40B 2N4992 equivalent SBS thyristor 2n2646 equivalent triac 9012 Triac 50 amp 250 volt
2n2646 equivalent

Abstract: 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 THYRISTOR A2f equivalent transistor of 2n6027 low voltage scr 3n84
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH ( SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS ) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"


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PDF 2N489-494â 2N2646-47â 2n2646 equivalent 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 THYRISTOR A2f equivalent transistor of 2n6027 low voltage scr 3n84
2n2646 ujt

Abstract: applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE
Text: Unilateral Switches (SUSs) are Silicon planar, monolithic ICs having thyristor electrical characteristics , Silicon planar, monolithic ICs having the electrical characteristics of a bilateral thyristor . Designed to , triggering at lower voltages. The SBS is ideally suited for half-wave and full-wave triggering in low-voltage , PUT 150 40 0.2-1.6 TO-92 GES6028 PUT 150 40 0.2-0.6 TO-92 2N4991 SBS 175 - 6.0-10.0 TO-98 2N4992 SBS


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PDF 2N6076 MPS2907A 2N4126 MPS-A55 2N4125 MPS-A56 2N3905 MPS-A93 2N3906 MPS-A92 2n2646 ujt applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE
2n2646 equivalent

Abstract: IN5059 SUS-2N4986 3N84 SUS 2N4987 2N4987-90 equivalent transistor of 2n6027 2N4987 equivalent ge motor capacitor cross reference CIRCUITS BY USING 2N6027
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH ( SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS ) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"


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PDF 2N489-494â 2N2646-47â 2n4987 2N4990 2n4986 in5059 -2N4990 SUS-2N4986 2n2646 equivalent IN5059 SUS-2N4986 3N84 SUS 2N4987 2N4987-90 equivalent transistor of 2n6027 2N4987 equivalent ge motor capacitor cross reference CIRCUITS BY USING 2N6027
2011 - BS08D-T112

Abstract: SBS thyristor BCR16 Triac trigger circuit CR2AM CR2AM-8 max9200 CR2AM8 triac dc motor control circuits T14-2
Text: EXAMPLES THYRISTOR TRIGGER CIRCUIT LOAD D R 220k AC INPUT 100VAC VR 1M C 0.1 µF SBS BS08D CR G R2 1k , silicon planar monolithic integrated circuit with the electrical characteristics of a bilateral thyristor , Thyristor or Triac, Oscillators, Timers Ordering Information: BS08D-T112 is tape and fancil packaged (2500 , VT2 -I TRIAC TRIGGER CIRCUIT LOAD VR 220K R1 100 0.25W D2 SBS BS08D C1 0.47 µF 25WV CIRCUIT


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PDF BS08D-T112 BS08D-T112 100VAC BS08D BCR16 400WV SBS thyristor Triac trigger circuit CR2AM CR2AM-8 max9200 CR2AM8 triac dc motor control circuits T14-2
Not Available

Abstract: No abstract text available
Text: a bilateral thyristor . The device is designed to switch at 7 to 9 volts with a 0.01%/°C , Control and Synchronization Applications: £ Trigger Circuits for Thyristor or Triac, Oscillators , EXAMPLES +I EQUIVALENT CIRCUIT THYRISTOR TRIGGER CIRCUIT VT1 T2 LOAD D R 220kΩ -V VR 1MΩ AC INPUT 100VAC ID2 VS2 CR2AM-8 +V CR IS2 IH2 G C SBS BS08D , A A D2 SBS BS08D C1 0.47 µF 25WV BCR16 HM-8 This circuit is usable in such


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PDF BS08D-T112 BS08D-T112 100VAC BS08D BCR16 400WV
1999 - Triac trigger circuit

Abstract: BS08D CR2AM-8 SBS thyristor BCR16 silicon bilateral switch 400WV thyristor control circuit diagram
Text: : Trigger Circuits for Thyristor or Triac, Oscillators, Timers Outline Drawing Dimensions , electrical characteristics of a bilateral thyristor . The device is designed to switch at 7 to 9 volts with , 15697-1800 (724) 925-7272 BS08D Silicon Bilateral Switch APPLICATION EXAMPLES THYRISTOR TRIGGER CIRCUIT , 100VAC IH1 IS1 ID2 VS2 -V CR2AM-8 +V CR IS2 G C SBS BS08D 0.1 F IH2 , SYMBOL LOAD T2 VR 200K D1 47 R1 100, 0.25W AC INPUT 100VAC R3 15k (1W) D2 SBS


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PDF BS08D BS08D 100VAC BCR16 400WV Triac trigger circuit CR2AM-8 SBS thyristor BCR16 silicon bilateral switch 400WV thyristor control circuit diagram
1999 - Triac trigger circuit

Abstract: SBS thyristor BCR16 silicon bilateral switch BS08D 400WV triac dc motor control circuits TRIAC EQUIVALENT
Text: : Trigger Circuits for Thyristor or Triac, Oscillators, Timers Outline Drawing Dimensions , electrical characteristics of a bilateral thyristor . The device is designed to switch at 7 to 9 volts with , 15697-1800 (724) 925-7272 BS08D Silicon Bilateral Switch APPLICATION EXAMPLES THYRISTOR TRIGGER CIRCUIT , 100VAC IH1 IS1 ID2 VS2 -V CR2AM-8 +V CR IS2 G C SBS BS08D 0.1 F IH2 , SYMBOL LOAD T2 VR 200K D1 47 R1 100, 0.25W AC INPUT 100VAC R3 15k (1W) D2 SBS


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PDF BS08D BS08D 100VAC BCR16 400WV Triac trigger circuit SBS thyristor BCR16 silicon bilateral switch 400WV triac dc motor control circuits TRIAC EQUIVALENT
2005 - silicon bilateral switch

Abstract: BCR16 BS08D-T112 BS08D T112 SBS thyristor Triac trigger circuit CR2AM-8 BS08D-112 BS08D equivalent
Text: Synchronization. Applications: £ Trigger Circuits for Thyristor or Triac, Oscillators, Timers 1.27 H , electrical characteristics of a bilateral thyristor . The device is designed to switch at 7 to 9 volts with , Volts APPLICATION EXAMPLES THYRISTOR TRIGGER CIRCUIT STATIC CHARACTERISTICS +I EQUIVALENT , IH1 IS1 ID2 +V IS2 G C SBS BS08D 0.1 F IH2 ID1 VS1 R2 1k VT2 This , 25WV SBS BS08D Triac BCR16 HM-8 This circuit is useable in such applications as lighting


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PDF BS08D-112 BS08D-T112 100VAC BS08D BCR16 400WV silicon bilateral switch BCR16 BS08D-T112 BS08D T112 SBS thyristor Triac trigger circuit CR2AM-8 BS08D-112 BS08D equivalent
2005 - BS08D-112

Abstract: silicon bilateral switch
Text: Switching Operation Control and Synchronization. Applications: £ Trigger Circuits for Thyristor or , monolithic integrated circuit with the electrical characteristics of a bilateral thyristor . The device is , APPLICATION EXAMPLES THYRISTOR TRIGGER CIRCUIT STATIC CHARACTERISTICS +I EQUIVALENT CIRCUIT VT1 , IS1 ID2 +V IS2 G C SBS BS08D 0.1 F IH2 ID1 VS1 R2 1k VT2 This , C1 0.47F 25WV SBS BS08D Triac BCR16 HM-8 This circuit is useable in such


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PDF BS08D-112 BS08D-T112 100VAC BS08D BCR16 400WV BS08D-112 silicon bilateral switch
2N4983

Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent 2N4991 GE C22B 2N602B SBS thyristor ge motor capacitor cross reference
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH ( SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS ) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"


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PDF 2N489-494â 2N2646-47â S-2N4983 2N4986 2N4986 2N4963 2N4983 ---15V transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent 2N4991 GE C22B 2N602B SBS thyristor ge motor capacitor cross reference
1998 - znr 10k 391

Abstract: TRIAC BCR 1 AM znr 10k BCR 3A 400V triac bcr BS08A znr 10k 112 ZNR 391 dc 220v motor speed control circuit with scr Application silicon bilateral switch light Dimmer
Text: , D4, R1, R3. · Phase control range is 10 to 170°. The thyristor CR trigger phase is controlled , 11.2 Temperature Control Circuit of an Electric Blanket using a Thyristor · Electric blankets of up to approximately 100W can be controlled by a thyristor . · Control by the zero volt switch , of the thyristor CR is set at around zero volt, and the on-off of the device is controlled by the , turned on, Q1 is always turned off and Q2 is always turned on, and the thyristor CR is triggered by


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PDF 6000pF BCR1AM-12 BS08A znr 10k 391 TRIAC BCR 1 AM znr 10k BCR 3A 400V triac bcr BS08A znr 10k 112 ZNR 391 dc 220v motor speed control circuit with scr Application silicon bilateral switch light Dimmer
1996 - DL137

Abstract: silicon bilateral switch 130 motorola thyristor TRIAC 8315 MAC6073B MAC6073A motorola MAC6071A 2N6071A B52200F006
Text: Switch ( SBS ) trigger application information, see the Motorola's Thyristor Data Book (DL137/D, Revision 6). 1. Interfacing Digital Circuits to Thyristor Controlled AC Loads, page 1.6­25. 2. Silicon Bilateral Switch ( SBS ) Applications, page 1.6­41. Motorola Thyristor Device Data 3 110 105 T , Thyristor Device Data © Motorola, Inc. 1996 1 MAC6071A,B MAC6073A,B MAC6075A,B THERMAL , Motorola Thyristor Device Data MAC6071A,B MAC6073A,B MAC6075A,B ELECTRICAL CHARACTERISTICS (TC = 25


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PDF MAC6071/D MAC6071A MAC6073A MAC6075A MAC6071/D* DL137 silicon bilateral switch 130 motorola thyristor TRIAC 8315 MAC6073B motorola 2N6071A B52200F006
2N4985

Abstract: 2N2646 cross reference 2n2646 equivalent 2N4984 GE SCR cross reference 2N4991 2N4983 2N2646 2n4992 Silicon unilateral switch
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH ( SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS ) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"


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PDF 2N489-494â 2N2646-47â GEC32U 10kHz 2N4984 I2N2647 -2n4985 2N4985 2N2646 cross reference 2n2646 equivalent 2N4984 GE SCR cross reference 2N4991 2N4983 2N2646 2n4992 Silicon unilateral switch
2N2646 equivalent

Abstract: SUS-2N4989 3n84 3N81 2N4991 D5K2 2N4988 20 amp 800 volt triac EQUIVALENT 2N1671 2N4983
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH ( SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS ) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"


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PDF 2N489-494â 2N2646-47â 2N4988 2N2647 022-/uF SUS-2N4989 2N4989 J2N2647 2N2646 equivalent SUS-2N4989 3n84 3N81 2N4991 D5K2 2N4988 20 amp 800 volt triac EQUIVALENT 2N1671 2N4983
6075A

Abstract: DL137 SBS thyristor
Text: Digital Interfacing and Silicon Bilateral Switch ( SBS ) trigger application information, see the M otorola's Thyristor Data Book (DL137/D, Revision 6). 1. Interfacing Digital Circuits to Thyristor Controlled AC Loads, page 1.6-25. 2. Silicon Bilateral Switch ( SBS ) Applications, page 1.6-41. Motorola Thyristor Device , 10 10 10 20 2 Motorola Thyristor Device Data M A C 6071 A,B M A C 60 7 3A ,B M A C 6075A ,B , Thyristor Device Data M A C 6071 A,B M A C 60 7 3A ,B M A C 6075A ,B l GT, GATE TRIGGER CURRENT


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PDF MAC6071/D MAC6071 MAC6073A O-225AA) 6075A DL137 SBS thyristor
2000 - full wave controlled rectifier using RC triggering circuit

Abstract: 1n5760 commutation techniques of scr half wave controlled rectifier using RC triggering circuit Silicon unijunction transistor Silicon unilateral switch RC snubber scr design triac based ac motor speed control using light di Triacs form factors four layer diode
Text: SECTION 2 THEORY OF THYRISTOR OPERATION Edited and Updated To successfully apply thyristors , , significant thyristor characteristics, the basis of their ratings, and their relationship to circuit design , devices for the power control elements. Table 2.1. Thyristor Types *JEDEC Titles Reverse Blocking Diode Thyristor Reverse Blocking Triode Thyristor Reverse Conducting Diode Thyristor Reverse Conducting Triode Thyristor Bidirectional Triode Thyristor Popular Names, Types { Four Layer Diode, Silicon { Unilateral


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PDF 2N6397 full wave controlled rectifier using RC triggering circuit 1n5760 commutation techniques of scr half wave controlled rectifier using RC triggering circuit Silicon unijunction transistor Silicon unilateral switch RC snubber scr design triac based ac motor speed control using light di Triacs form factors four layer diode
four-layer diode

Abstract: transistor 2N4983 2N4992 D13V1 2N4990 2N4983 2N4991 RA3A 2n4989 SBS thyristor 2n4991
Text: , SBS ) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor , eliminate rate effect, obtain triggering at lower voltages, and to obtain transient-free waveforms. The SBS


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PDF 2N4988 2N4989 2N4990 2N4983 2N4985 2N4986 2N4991 2N4992 2N4993 four-layer diode transistor 2N4983 2N4992 D13V1 2N4990 2N4983 2N4991 RA3A 2n4989 SBS thyristor 2n4991
diac SBS 14

Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Text: circuits, and relaxation oscillators. SILICON BILATERAL SWITCH ( SBS ) Maximum Ratings NTE Type , wave and full wave triggering in low voltage SCR and TRIAC phase control circuits. A2O o Ö A! SBS , fa^iasq Qoaab73 7n MNTE T-25-01 SIDAC-BIDIRECTIONAL THYRISTOR DIODES (For Pulse Generating and , having thyristor electrical characteristics closely approximating those of an "ideal" four layer diode , characteristics from 28 to 63 Volts. The DIAC semiconductor is a full-wave or bidirectional thyristor . It is


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PDF
ujt transistor 2n2160

Abstract: 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
Text: UNfJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued developing an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH ( SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E


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PDF 2N489-494â 2N2646-47â ujt transistor 2n2160 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
1998 - triac zd 107

Abstract: triac bcr BS08A BS08A TRANSISTOR equivalent SCR induction furnace circuit diagram 1000w inverter design and calculation TRIAC BCR 50 AM BCR 3A 400V CR3JM equivalent TRIACS EQUIVALENT LIST
Text: , Lead Mount, Inductive Load Triac (1) Type of Device BCR : Triac CR : Thyristor (4) Package , the maximum rate-of-rise of on-state current which the thyristor will withstand after switching from , thyristor in an on-state. At specified junction temperature, off-state voltage and gate conditions, and , , indicates the minimum anode current required to hold the thyristor in an on-state. At maximum rated , gate DC current required to switch the thyristor from an off-state to an on-state. At a junction


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PDF BCR10CM-8L Loa25 O-202B1 O-220 BS08A triac zd 107 triac bcr BS08A BS08A TRANSISTOR equivalent SCR induction furnace circuit diagram 1000w inverter design and calculation TRIAC BCR 50 AM BCR 3A 400V CR3JM equivalent TRIACS EQUIVALENT LIST
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