The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver

SAMSUNG SEMICONDUCTOR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - samsung roadmap

Abstract: USB Flash Memory SAMSUNG SAMSUNG MCp nand Samsung Nand gb MCP Technology Trend SAMSUNG NAND FLASH NAND flash differences NAND Reliability note MCP NAND, DRAM, NOR Samsung MCP
Text: by Samsung Semiconductor , Inc. © 2003 Samsung Semiconductor , Inc. SAMSUNG SEMICONDUCTOR , INC , shape the market. Samsung Semiconductor , the established leader in memory, is such a supplier , a supplier? © 2003 Samsung Semiconductor , Inc. CG2020-A 1.15.03 2 of 7 SAMSUNG , technology, processes, and designs. © 2003 Samsung Semiconductor , Inc. CG2020-A 1.15.03 3 of 7 SAMSUNG SEMICONDUCTOR , INC. POSITION PAPER NAND on the Rise Is My Supplier Ahead of the Curve


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PDF CG2020-A samsung roadmap USB Flash Memory SAMSUNG SAMSUNG MCp nand Samsung Nand gb MCP Technology Trend SAMSUNG NAND FLASH NAND flash differences NAND Reliability note MCP NAND, DRAM, NOR Samsung MCP
KS5814

Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC DH ]>Ì| 7 ^ 4 1 ^ 00GSfl37 3 T KS5814 — n - 1 3 , dissipation. 14 pins dual-in-line plastic package. SAMSUNG SEMICONDUCTOR 236 SAMSUNG SEMICONDUCTOR , SAMSUNG SEMICONDUCTOR 237 ''" - - INC Da D E | 7 T b 4 1 4 S □□OSflBT 7 • • ' â , 522 334 129 129 800 1441 1441 1441 1441 1307 830 SAMSUNG SEMICONDUCTOR Pad No. 8 9 , 9 0 - 3^0 Unit: mm Unit: mm 18 DIP 0.30 TYP SAMSUNG SEMICONDUCTOR 0894 A


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PDF 00GSfl37 KS5814 KS5814
equivalent transistor c 243

Abstract: samsung tv
Text: ) E : SAMSUNG SEMICONDUCTOR 243 SAMSUNG SEMICONDUCTOR INC IME D § 7 c lb41»lS , N T COLLECTOR-EMITTER VOLTAQE SAMSUNG SEMICONDUCTOR 244 IME O I 7 ñ t m 42 0 DQ7 b 7 D 3 | KSD5013 SAMSUNG SEMICONDUCTOR INC NPN TRIPLE DIFFUSED PLANAR SILICON , SAMSUNG SEMICONDUCTOR 245 SAMSUNG SEMICONDUCTOR INC IME O I V^bMlMS 0 0 G 7 7 , TO-92S Unit: mm 0 « SAMSUNG SEMICONDUCTOR 331 SAMSUNG SEMICONDUCTOR INC IME


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PDF KSD5013 0QG77fe equivalent transistor c 243 samsung tv
Not Available

Abstract: No abstract text available
Text: 100 2 50 0.5 0.9 PF 6.0 24 · dB dB SAMSUNG SEMICONDUCTOR 652 SAMSUNG SE MI , VOLTAGE COLLECTOR-EMÍTTER SATURATION VOLTAGE WmA), COLLECTOR CURRENT SAMSUNG SEMICONDUCTOR 653 SAMSUNG SEMICONDUCTOR INC 14E D l T l b M l M E 0007413 S T 7 |- PACKAGE DIMENSIONS TO-92 Unit: mm SAMSUNG SEMICONDUCTOR 683 SAMSUNG SEMICONDUCTOR INC 14E D J , SAMSUNG SEMICONDUCTOR 684 SAMSUNG SEMICONDUCTOR INC 14E D I 7^^4145 GGD7415 * 1 T ^ q


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PDF MPSH17
KS5206E

Abstract: ks5206a05hz KS5206A
Text: drive circuit 3 3 OUT1 OUT2 <8 SAMSUNG SEMICONDUCTOR 96 SAMSUNG S E M I C ONDU , greater than this may result in damage to the circuit SAMSUNG SEMICONDUCTOR 97 SAMSUNG SE MI CON , (KS5206A, E, F) 05 sec 0.5 sec 62.5rn sec py by Fig. 2 SAMSUNG SEMICONDUCTOR 98 V , =2.5pF Rs=36K Q=35,000 Fig. 3. * No NEED CAPACITOR in KS5206E, F SAMSUNG SEMICONDUCTOR 99 SAMSUNG SEMICONDUCTOR INC DEE D 71b4142 G00SäS4 3 PACKAGE DIMENSIONS 7 - -


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PDF KS5206 KS5206 KS5206A KS5206E KS5206F 2048Hz 768KHz 766Hz ks5206a05hz
KSC2749

Abstract: npn transistors 400V 1A To92 NPN TO92 400V
Text: .(1) N 15-30 R 20-40 0 30-60 Y 40-80 SAMSUNG SEMICONDUCTOR 148 SAMSUNG S E M I CONDUCTOR . , ), COLLECTOR-EMITTER VOLTAGE SAMSUNG SEMICONDUCTOR 149 SAMSUNG SEMICONDUCTOR INC 1 4 E D | 7 * ^ 4 1 , EPITAXIAL SILICON TRANSISTOR SWITCKMO TW E * m « SAMSUNG SEMICONDUCTOR 150 SAMSUNG , 0.45 0.60 M TO-92L Unit: mm TO-92S Unit: mm 0 « SAMSUNG SEMICONDUCTOR 331 SAMSUNG SEMICONDUCTOR INC IME D 1 7 ^ 4 1 4 2 0007757 4 | P A C K A G E DIMENSIONS s


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PDF KSC2749 GQG77fe KSC2749 npn transistors 400V 1A To92 NPN TO92 400V
Not Available

Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC D5 _ . . ' ' KS5199A ' D E I 7 ^ 4 1 4 2 DODSblE 3 , SAMSUNG SEMICONDUCTOR 90 SAMSUNG SE M IC ON DU CTOR INC 02 ~ Ì e | 7*ìb4mS 0 0 0 5 ^ 3 > ' , €¢ BC1/D2 must be connected to B1/C1 pad for 12-hour application. SAMSUNG SEMICONDUCTOR 91 B , suspends time-keeping. SAMSUNG SEMICONDUCTOR 92 SAMSUNG SEMICONDUCTOR INC 05 . _ . . . , second reset. SETTING AND DISPLAY SEQUENCE Fig. 2 SAMSUNG SEMICONDUCTOR 93 ^ S AMSUNG


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PDF KS5199A KS5199A 768Hz
Not Available

Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 02 DE~1 7 ^ 4 1 4 5 OQDSflMb H , KS5815 ~r^c»S-f3 . CMOS , °F) SAMSUNG SEMICONDUCTOR 245 SAMSUNG SEMICONDUCTOR INC 02 KS5815 D E J7 T t4 1 4 2 0005047 , V il1 = 0 .0 V — — *A pA 10.0 (SW ) (A 0.1 SAMSUNG SEMICONDUCTOR ixA 246 SAMSUNG SEMICONDUCTOR INC 02 — — ■-•»*>• — • •••-••- - , LCD are removed. SAMSUNG SEMICONDUCTOR 247 SAMSUNG SEMICONDUCTOR INC OS D Ã


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PDF KS5815 KS5815
SAMSUNG CHIP CAPACITOR

Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 05 . ' · D E I 7 ^ 4 1 4 5 000573L. f l | 5736 - D ¿ÓJL ' , capacitance on a PWB ö S SAMSUNG SEMICONDUCTOR % 0 134 m m m m am m r S A M S U N G S E M I , - 1- VqA Voc î î j SAMSUNG SEMICONDUCTOR 135 SAMSUNG , 8 digits. Numerical enteries equal to 9 digits or more are ignored. g g SAMSUNG SEMICONDUCTOR , font M M em ory E rror M inus 0 5 SAMSUNG SEMICONDUCTOR 137 SAMSUNG SEMICONDUCTOR INC


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PDF 000573L. KS6026 KS6026 SAMSUNG CHIP CAPACITOR
digital watch circuit

Abstract: ks531
Text: operating frequency 1.5V operation BLOCK DIAGRAM Fig. 1 SAMSUNG SEMICONDUCTOR 225 S A M S U , SAMSUNG SEMICONDUCTOR 226 SAMSUNG SEMICONDUCTOR ~- - INC , OUT NC 1830 2100 2410 NC 350 150 Fig. 4 f i £ SAMSUNG SEMICONDUCTOR %0 227 S A , : f. Output Pad: g. Application Set 5. Others. SAMSUNG SEMICONDUCTOR 228 SAMSUNG , 8 DIP Unit: mm 18 DIP Unit: mm 0.30 TYP 0.56 1.02 SAMSUNG SEMICONDUCTOR 0894


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PDF KS5310 KS5310 768Hz digital watch circuit ks531
Not Available

Abstract: No abstract text available
Text: , voltage tripler circuits. Trimmer capacitor Included. SAMSUNG SEMICONDUCTOR 56 S A M S U N G , citor S w itc h D ebouncing Tim e T (jeb SAMSUNG SEMICONDUCTOR PF 31.25 mSEC 57 S , SEMICONDUCTOR 58 SAMSUNG SE MI CONDU CT OR INC 02 DE§ 7 ^ 4 1 4 2 DOOSbhl 3 | 0566t D T , hand I : H our hand Fig. 4. Switch operation. SAMSUNG SEMICONDUCTOR 59 SAMSUNG SE MIC ONDU , SAMSUNG SEMICONDUCTOR 60 S A M S U N G S E M I C O N D U C T O R INC DE KS5113 D E § 7 T L 4


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PDF KS5113 KS5113 768Hz
4p1c

Abstract: samsung nand derating
Text: SAMSUNG SEMICONDUCTOR INC DE D e ( 7 ^ 4 1 4 2 DDDbEBS 5 | - T ~ < / < Z 'J 7 FEATURES · , SEMICONDUCTOR 376 SAMSUNG SEMICONDUCTOR I N C 05 De| 7 ^ m . M 5 000^53^ ^ | r- SAMSUNG SEMICONDUCTOR 377 SAMSUNG SEMICONDUCTOR INC DE De | 7 ^ , DIAGRAMS (continued) '686 8-Bit Magnitude Comparators SAMSUNG SEMICONDUCTOR 378 SAMSUNG ' a , other Inputs: at Vcc or GND Iout=OjjA 2.7 2.9 3.0 mA SAMSUNG SEMICONDUCTOR 379


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PDF 54f74ALS KS74AHCT: KS54AHCT: 300-mil 7Tb414S 90-XO 14-Pin 4p1c samsung nand derating
jb21

Abstract: samsung k5 samsung K4 samsung display 10"
Text: 7 - - 3 .3 Unit V SAMSUNG SEMICONDUCTOR 119 SAMSUNG S EM ICO NDUC TOR INC D5 D Ì , SEMICONDUCTOR 120 SAMSUNG SEMICONDUCTOR INC 05 D E | 7 ^ 4 1 4 5 0005753 0 J V _ KS6022A 4 , SAMSUNG SEMICONDUCTOR 121 SAMSUNG SE MICONDU CTOR INC D2 ' -· · De J 7c iL>414E , a7 c6 b6 a6 c5 b5 a5 c4 b4 a4 c3 b3 a3 c2 b2 a2 c1 b1 a l H3 { S SAMSUNG SEMICONDUCTOR 122 , output o 0 o 0 o o 0 0 SAMSUNG SEMICONDUCTOR 123 L SAMSUNG SEM ICO NDUCTOR


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PDF KS6022A KS6022A jb21 samsung k5 samsung K4 samsung display 10"
hctls86

Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC OB DE^ 7 H m M a 000^330 7 K S S 4 H C T L S O ^ , < § SAMSUNG SEMICONDUCTOR 473 SAMSUNG SEMICONDUCTOR INC OH dF | 7c itI414S OOOt , ¿ I SAMSUNG SEMICONDUCTOR 474 SAMSUNG SEMICONDUCTOR IN C 05 D E | 7 ^ 4 I M 5 , SEMICONDUCTOR 475 SAMSUNG SEMICONDUCTOR IN C Q2E D 7Tb414S GODfc.L.35 7 PACKAGE DIMENSIONS_T ~ ? Ô ^ ^ O 1. PLASTIC PACKAGES SAMSUNG SEMICONDUCTOR 1675 A- 04 781 SA M S U N G


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PDF KS74HCTLS 54/74LS KS74HCTLS: KS54HCTLS: 300-mil 7Tb414S 90-XO 14-Pin hctls86
Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR 100 SAMSUNG S E M I CO ND UCTOR INC 05 DEI 7^4145 III005703 4 ' ' ^3 D . o , to the 1HR output, (pin 6) 5JJ SAMSUNG SEMICONDUCTOR M SAMSUNG SE MICO ND UC TO R INC GH , (KS5207A, E, F) [1 -3 6 0 0 s e c - Fig. 2 £ SAMSUNG SEMICONDUCTOR 102 SAMSUNG SE MI C O N , SAMSUNG SEMICONDUCTOR 103 SAMSUNG S EM ICO NDUC TOR INC DEE D 71b4142 G00SäS4 3 7 - 9 0 , 1.02 SAMSUNG SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E


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PDF KS5207 KS5207A KS5207E KS5207F 768KHz III005703 KS5207
DI590

Abstract: digital watch lcd circuit SAMSUNG CHIP CAPACITOR quartz watch chip digital KS5198 4 digit lcd display for watch
Text: greater than above may result in damage to the circuit. <8 SAMSUNG SEMICONDUCTOR 84 S A M S U , alternating mode will cause the SECOND display mode. SAMSUNG SEMICONDUCTOR 85 SAMSUNG S E M I C O , n n n n n n n n n n n n n n Fig. 2 SAMSUNG SEMICONDUCTOR 86 S A M S U N G S E M I C O N , SEMICONDUCTOR 87 SAMSUNG SEMICONDUCTOR - , INC D5 i>ËÏ 7^1.4145 D D O S b T D D I , SETTING AND DISPLAY SEQUENCE Fig. 3 SAMSUNG SEMICONDUCTOR 88 S A M S U N G S E M I C O N D U


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PDF KS5198 KS5198 768Hz 7U414E DI590 digital watch lcd circuit SAMSUNG CHIP CAPACITOR quartz watch chip digital 4 digit lcd display for watch
KS5211E

Abstract: acr transister 08DIP
Text: BLOCK DIAGRAM SAMSUNG SEMICONDUCTOR 113 - - - . , ). SAMSUNG SEMICONDUCTOR 114 S A M S U N G S E M I C O N D U C T O R INC DE D E | 7 T t , SAMSUNG SEMICONDUCTOR 115 SAMSUNG S E M I C O N D U C T O R INC DS DEJ 7^4145 S71fl L , Designation V dd V 2 3 4 5 6 7 8 9 10 Vss M1 AL-IN M2 AL-OUT OO Ol V ee SAMSUNG SEMICONDUCTOR 116 SAMSUNG SEMICONDUCTOR INC DEE D 71b4142 0005354 3 PACKAGE DIMENSIONS


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PDF DQDS71S KS5211 KS5211 KS5211A KS5211E KS5211F 768KHz KS5211E acr transister 08DIP
la 4142

Abstract: MJE340 MJE200 MJE210 MJE350 300V transistor pnp 2a 3V to 300V transformer
Text:  SAMSUNG SEMICONDUCTOR INC 14E 0 | 7^1,4142 00071=10 3 | MJE210 PNP EPITAXIAL SILICON TRANSISTOR , Capacitance Cob Vca=-10V, lE=0, f=0.1 MHz 120 pF Qfi SAMSUNG SEMICONDUCTOR 273 SAMSUNG SEMICONDUCTOR INC , ) -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 MA), COLLECTOR CURRENT Qfi SAMSUNG SEMICONDUCTOR 274 - SAMSUNG , =0 Vc£=10V, lc=50mA 300 30 100 100 240 V fA fA Qfi SAMSUNG SEMICONDUCTOR 275 SAMSUNG SEMICONDUCTOR , Va SAMSUNG SEMICONDUCTOR 276 SAMSUNG SEMICONDUCTOR INC 1ME D


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PDF MJE210 65MHz -100mA MJE200 Vce--10V, MJE350 r-33-fl la 4142 MJE340 MJE200 MJE350 300V transistor pnp 2a 3V to 300V transformer
KS74AHCT74

Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC OS D E B 7 - % H-l-42 .ODOSitO 2 KS54AHCT KS74AHCT FEATURES , unpredictable if PRE and CLR go high simultaneously. LOGIC DIAGRAM SAMSUNG SEMICONDUCTOR 101 m a SAMSUNG SEMICONDUCTOR I N C 05 DE KS54AHCT KS74AHCT 74 I T - H b - Q l - OS Dual D-Type , SAMSUNG SEMICONDUCTOR 102 SAMSUNG SEMICONDUCTOR INC DE D jJ 7Tb414a DOOSTtiS b , timing waveforms see section 2. SAMSUNG SEMICONDUCTOR 103 SAMSUNG SEMICONDUCTOR INC Q2E D


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PDF H-l-42 KS54AHCT KS74AHCT 7Tb414S 90-XO 14-Pin KS74AHCT74
samsung 649

Abstract: KS74HCT 06A06 BD 649 equivalent
Text: SAMSUNG SEMICONDUCTOR INC 05 D e | 7Tt4-meMDDDtSps KS54HCTLS KS74HCTLS Octal D-Type , SAMSUNG SEMICONDUCTOR 648 SAMSUNG SEMICONDUCTOR INC 5 PE j 7^b HIM5 0 0 k 5 Q b 7 KS54HCTLS 0 , SAMSUNG SEMICONDUCTOR 649 SAMSUNG SEMICONDUCTOR INC 02 ^ J E_|. 7 ^ 4 1 4 2 OOQbSD? jT , and timing waveforms see section 2. . SAMSUNG SEMICONDUCTOR 650 SAMSUNG SEMICONDUCTOR , ^ O 1. PLASTIC PACKAGES SAMSUNG SEMICONDUCTOR 1675 A- 04 781 SAMSUNG SEMICONDUCTOR INC


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PDF KS54HCTLS KS74HCTLS 7Tb414S 90-XO 14-Pin samsung 649 KS74HCT 06A06 BD 649 equivalent
Not Available

Abstract: No abstract text available
Text: , Duty Cycle <2% SAMSUNG SEMICONDUCTOR 586 SAMSUNG SEMICONDUCTOR INC 14E D 7 ^ 4 1 4 5 0007413 S T 7 | - PACKAGE DIMENSIONS TO-92 Unit: mm SAMSUNG SEMICONDUCTOR 683 SAMSUNG SEMICONDUCTOR INC 14E D J ?1b4142 0007414 ? | PACKAGE , 0.25 t 1.65 2715 y i f m I SAMSUNG SEMICONDUCTOR 684 SAMSUNG SEMICONDUCTOR , BO SSED CARRIER Specification for SOT-23 Unit: mm É SAMSUNG SEMICONDUCTOR 605 S AM S


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PDF 0QQ731fc, MPS3705 625mW 2N4400
Not Available

Abstract: No abstract text available
Text: : i t V V pF dB Marking SAMSUNG SEMICONDUCTOR 477 SAMSUNG SEMICONDUCTOR INC , SEMICONDUCTOR Unit: mm 683 SAMSUNG SEMICONDUCTOR INC 14E D J ?1b4142 PACKAGE , Unit: mm ♦3.61 3.75 ; 4 -25 t y f I m SAMSUNG SEMICONDUCTOR i 0.17 0.25 t 1.65 2715 684 SAMSUNG SEMICONDUCTOR INC 14E D I 7^^4145 GGD7415 * 1 PACKAGE , F F,-F, Do t Ah d T L, SAMSUNG SEMICONDUCTOR 12.7 + 0.5 12.7+0.2 3 .8 5 ± 0 .5 6


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PDF BCW33 OT-23
Not Available

Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR Max dB dB “ B 522 SAMSUNG SEMICONDUCTOR INC HIE D ■7 ^ 4 1 4 5 0007*413 5 T 7 |- PACKAGE DIMENSIONS TO-92 SAMSUNG SEMICONDUCTOR Unit: mm 683 SAMSUNG SEMICONDUCTOR INC 14E D J 71b4142 PACKAGE DIMENSIONS_ T , 3.75 ; 4 -25 l y f I m SAMSUNG SEMICONDUCTOR i 0.17 0.25 t 1 .6 5 2715 684 SAMSUNG SEMICONDUCTOR INC 14E D I 7^^4145 GGD7415 *1 PACKAGE DIMENSIONS T


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PDF MMBR5179 OT-23
KA22424

Abstract: SAMSUNG FM IC FM radio CIRcuit DIAGRAM samsung filter
Text: SEMICONDUCTOR 198 SAMSUNG SE MICO ND UC TO R INC Tfl DËfJ 7 ^ 4 1 4 5 OODBMSS 5 ' .' , Voltage gain A, 44 dB SAMSUNG SEMICONDUCTOR 199 SAMSUNG SE MI CONDU CT OR INC " J f l , LINEAR INTEGRATED CIRCUIT SAMSUNG SEMICONDUCTOR 200 SAMSUNG SEMICONDUCTOR INC Tfl D E j T l , 10pF 0.047/iF C17 0.047^F SAMSUNG SEMICONDUCTOR 201 SAMSUNG SE MIC ONDU CT OR INC Tfl , 470iJ 8 (AM)from 33K0 to infinity. 16(FM) from 390iito 680Q. SAMSUNG SEMICONDUCTOR 202 db


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PDF KA22424 KA22424 SAMSUNG FM IC FM radio CIRcuit DIAGRAM samsung filter
KA431

Abstract: block schematic of KA431 7Tb41 KA431CD KA431IZ samsung monitor t 260 A431 KA431IN KA431CZ KA431CN
Text:  SAMSUNG SEMICONDUCTOR INC 10 DE| 7^4142 00G47b7 3 KA431 LINEAR INTEGRATED CIRCUIT , . REFERENCE CE 1/ B7 : î R8 ANODE SAMSUNG SEMICONDUCTOR 401 SAMSUNG SEMICONDUCTOR INC ifl DE| 7^4145 , 100mA f <1.0KHz 0.22 0.5 ß 1 * Test Circuit SAMSUNG SEMICONDUCTOR 402 _ SAMSUNG SEMICONDUCTOR IMG , KA431 SAMSUNG SEMICONDUCTOR 403 SAMSUNG SEMICONDUCTOR INC" Tfi DII 7^4145 0004770 3 | KA431 LINEAR , S I I I III T«=25'0 10mA S 10K 10ÛK 1M f—Frequency—Hz FIGURE 9 <8 SAMSUNG SEMICONDUCTOR


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PDF 00G47b7 KA431 KA431 100mA block schematic of KA431 7Tb41 KA431CD KA431IZ samsung monitor t 260 A431 KA431IN KA431CZ KA431CN
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