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Part Manufacturer Description Datasheet Download Buy Part
LT3571EUD#TRPBF Linear Technology LT3571 - 75V DC/DC Converter for APD Bias; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT3571IUD#PBF Linear Technology LT3571 - 75V DC/DC Converter for APD Bias; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT3571IUD#TRPBF Linear Technology LT3571 - 75V DC/DC Converter for APD Bias; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT3571EUD#PBF Linear Technology LT3571 - 75V DC/DC Converter for APD Bias; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Rise time of photo transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MRD810

Abstract: No abstract text available
Text: = 100 ohms. Note 1) II 1.0 - — mA Photo Current Saturated Rise Time (Note 3) 'risati - 2.0 - ws Photo Current Saturated Fall Time (Note 3) tf(sat) - 25 - es Photo Current Rise Time (Note 4} tr - - 5.0 MS Photo Current Fall Time (Note 4) tf - - 6.0 JiS NOTES: 1. Radiation flux density (H) equal , MRD810 (Silicon) NPN SILICON PHOTO TRANSISTOR . . . designed for application in card and tape , VOLTS NPN SILICON PHOTO TRANSISTOR 250 MILLIWATTS I—A — r-t- SEATING PLANE STYLE 2: PIN 1


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PDF MRD810 MRD810
2011 - TRANSISTOR SMD MARKING CODE p1

Abstract: EL series SMD transistor 815Y EL852 smd transistor S1 TRANSISTOR SMD MARKING CODE 4 pin dip photo transistor smd code s1 TRANSISTOR
Text: 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Features: · High , 18, 2011 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Electrical , capacitance Cut-off frequency Rise time Fall time * Typical values at Ta = 25° C Symbol CTR Min. 1000 5×10 10 , VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Typical Performance Curves Everlight , 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Everlight


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PDF EL852 DPC-0000056 TRANSISTOR SMD MARKING CODE p1 EL series SMD transistor 815Y smd transistor S1 TRANSISTOR SMD MARKING CODE 4 pin dip photo transistor smd code s1 TRANSISTOR
Not Available

Abstract: No abstract text available
Text: conversion circuit Optically coupled transistor circuit b72424D G Dlfm fl 328 GEM OC360 PHOTO , ,72424G ODlflTM1 TbO ! ¿ I (LED) (LED) (LED) (LED) ( Photo transistor ) ( Photo transistor ) ( Photo transistor ) ( Photo transistor ) 329 OC360 PHOTO COUPLERS A BSO LU TE MAXIMUM RATINGS , Rise Time Response Characteristics Fall Time b 7 2 4 2 4 G □□Iß' l SD 7 0 S 330 Unit , OKI electronic components O C360 PHOTO COUPLER GEN ERA L DESCRIPTION The OC360 is a


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PDF OC360 CXZ360 E86831 OC360 24B40 L724240
2004 - MAX280

Abstract: SSC-PTR202 SSC-PTR202-IX0 SMD 5c Transistor
Text: *Customer: SPECIFICATION ITEM MODEL PART NO. Photo Transistor SSC-PTR202-IX0 [Contents , ( Rise time ) Tr Response (Fall time ) Tf SSC-QP-0401-06(REV.0) Condition VCE=10V, E , Transistor is correspond SMD, when Photo Transistor be soldered dip, interfacial separation may affect the , . LED Surface temperature °C Operation heating 240 150 Pre-heating Temperature rise : 5 , Pre-heating Temperature rise : 5°C/sec. Cooling: -5°C/sec. ~ 120 0 60 to 120 sec. 10 to 20


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PDF SSC-PTR202-IX0 SSC-QP-0401-06 SSC-PTR202 MAX280 SSC-PTR202 SSC-PTR202-IX0 SMD 5c Transistor
Not Available

Abstract: No abstract text available
Text: -5L6 PHOTO TRANSISTOR Lamp Condition In the automatic mounting of LAMP LED to the L/F , any bending , OST-5L6 PHOTO TRANSISTOR General Description The OST-5L6 is high sensitivity NPN silicon , voltage IC=2mA , IB=100uA A Radiant sensitivity area Peak sensitive wavelength p tr Rise time VCC , . December 2005 Rev 1.0 OST-5L6 PHOTO TRANSISTOR 0 0 5 4 3 2 25 .5 75 1.0 1.25 December 2005 Rev 1.0 OST-5L6 PHOTO TRANSISTOR Reliability Test


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PDF 200Hrs TR940nm
SM16G14

Abstract: photo thyristor application tlp541 SM6G14 photo thyristor lt 529 thyristor RC inductive load thyristor design how to make ic copier tlp521 equivalent TLP546G
Text: Coupler Output Circuit (1) Base terminal The transistor action of an output photo transistor , is , tempera ture of the photo coumpler. The relation between switching time and R|_ (load resistance), R q is , and transistor T r | is saturated by this divided voltage. That is, as photo current Ip of the photo , 11N(off) " ~ ~ RS In the case of the Toshiba-IRED, the value of V y is 0.5V. Driving by transistor or 1C In Fig. 8-37 are shown examples of L E D driving circuits by using transistor or 1C. P _ V C C


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PDF TLP546G SM16G14 photo thyristor application tlp541 SM6G14 photo thyristor lt 529 thyristor RC inductive load thyristor design how to make ic copier tlp521 equivalent
transister

Abstract: c 331 transistor OC-360 OC360 photo transister
Text: ) (LED) ( Photo transistor ) ( Photo transistor ) ( Photo transistor ) ( Photo transistor ) ■à , -0utput Capacitance Cin-out Vin-out=0,f=1 MHz — 1.3 — pF Response Rise Time tr — — 4 — us Characteristics , OKI electronic components OC36Q_ PHOTO COUPLER GENERAL DESCRIPTION The OC360 is a , between circuits with different phases, or for isolation of ground loops. FEATURES • Current transfer , transistor circuit L721424D OOlflTMfl OEM 328 Powered by ICminer.com Electronic-Library Service CopyRight


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PDF OC36Q_ OC360 OC36C) E86831 OC360 b72424G transister c 331 transistor OC-360 photo transister
OST-9N15

Abstract: color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303
Text: otherwise noted. December 2005 Rev 1.0 OST-9N15 PHOTO TRANSISTOR Reflow Temp / Time , 2005 Rev 1.0 OST-9N15 PHOTO TRANSISTOR Test items and results of reliability Type Test , OST-9N15 PHOTO TRANSISTOR General Description The OST-9N15 is high sensitivity NPN silicon , usec usec deg. December 2005 Rev 1.0 OST-9N15 PHOTO TRANSISTOR FIG.2 NORMALIZED COLLECTOR , 0 25 50 75 100 125 TA-Ambient Temperature - FIG.3 RISE AND FALL TIME VS. LOAD


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PDF OST-9N15 OST-9N15 100uA 72hrs. 24hrs) 45min 30min) color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303
MRD450

Abstract: Rise time of photo transistor
Text: Light Current 1 (Vcc = 20 V, R[_ - 100 ohms. Note 1) 1 'L 1.0 4.0 mA Photo Current Rise Time (Note 3) 2 and 3 tr - - 2.5 US Photo Current Fall Time (Note 3) 2 and 3 tf - - 4.0 MS Wavelength of Maximum , Junction Temperature tr Photo Current Rise Time - The response time for the photo-induced current to rise , MRD450 (SILICON) PLASTIC NPN SILICON PHOTO TRANSISTOR . . . designed for application in , unsaturated response time measurements, radiation is a tungsten source at a color temperature of 2870 K


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PDF MRD450 MRD450 Rise time of photo transistor
phototransistor sensitive to red light

Abstract: Infrared Phototransistor color sensitive PHOTO TRANSISTOR LED Reflective Optical Sensor VISIBLE LIGHT PHOTOdarlington TRANSISTOR phototransistor visible light all datasheet phototransistor PHOTO GAP DETECTOR photo transistor application VISIBLE LIGHT PHOTOTRANSISTOR
Text: a Photodarlington transistor is shown in Figure 1. Photo IC type of receiver. This type consists of , Photodarlington Transistor Figure 2. Configuration of an OMRON Photo IC Constant voltage circuit Amp with , junction of the output transistor of the photo IC. POUT Output permissible dissipation The maximum power that is consumed by the collector junction of the output transistor of the photo IC. VF , Rising time The time required for the leading edge of an output waveform of a phototransistor to rise


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PDF
Not Available

Abstract: No abstract text available
Text: 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Features: ! ! , PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Absolute Maximum Ratings , ://www.everlight.com November 18, 2011 Κ 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR , - 7 - kHz Cut-off frequency 5×10 Rise time tr - - 300 µs Fall , VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Typical Performance Curves Everlight


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PDF EL852 DPC-0000056
photo transister

Abstract: transister "photo transistor" PHOTO TRANSISTOR TRansistor A 940 OC360 Photo diode circuit diagram
Text: transistor ) ( Photo transistor ) ( Photo transistor ) ( Photo transistor ) ■È.724Z4G ODlßTHI TbO ■329 , Vin-out=0,f=1 MHz — 1.3 — pF Response Rise Time tr — — 4 — us Characteristics Fall Time tf â , OKI electronic components OC36Q_ PHOTO COUPLER GENERAL DESCRIPTION The OC360 is a , between circuits with different phases, or for isolation of ground loops. FEATURES • Current transfer , transistor circuit L7214240 OOlflTMfl OEM 328 This Material Copyrighted By Its Respective Manufacturer


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PDF OC36Q_ OC360 OC36C) E86831 S4B40 OC360 b72424G photo transister transister "photo transistor" PHOTO TRANSISTOR TRansistor A 940 Photo diode circuit diagram
Not Available

Abstract: No abstract text available
Text: Isolation resistance R in-out teristics Input-to-output capacitance C in-out Response Rise time tr Character , O K I electronic components OC36Q PHOTO COUPLER GENERAL DESCRIPTION The OC360 is a photocoupler , interface between circuits with different phases, or for isolation of ground loops. FEATURES · Current , Pulse transformer · Power separating circuit · Level conversion circuit · Optically coupled transistor , Cathode Emitter Collector Emitter Collector (LED) (LED) (LED) (LED) ( Photo ( Photo ( Photo ( Photo ra l


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PDF OC36Q OC360 E86831
scr 2n4444

Abstract: light operated scr alarm MRD3056 photo transistor mrd3056 2n4444 transistor NPN 2n4444 MRD3050 color sensitive PHOTO TRANSISTOR 2n5060 transistor MRD3055
Text: MRD3056 2.0 - - Photo Current Saturated Rise Time {Note 3) 4 'r(sat) - 1.0 - cs Photo Current Saturated Fall Time (Note 3) 4 'f(sat) - 10 - es Photo Current Rise Time (Note 4) 4 Photo Current Fall Time (Note 4) 4 of Maximum Sensitivity - - 08 - ti m NOTES: 1 , MRD3050 thru MRD3056 (SILICON) NPN SILICON PHOTO TRANSISTOR . . . designed for application , H, RADIATION FLUX DENSITY ImW/cm?) 30 VOLT NPN SILICON PHOTO TRANSISTOR 400 MILLIWATTS NOTES: 1


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PDF MRD3050 MRD3056 MRD3050 AN-508, 2N5060 MPS6516 2N4444* 2N4444 scr 2n4444 light operated scr alarm MRD3056 photo transistor mrd3056 2n4444 transistor NPN color sensitive PHOTO TRANSISTOR 2n5060 transistor MRD3055
R2h DIODE

Abstract: CCDs Charge Coupled Devices images of 74107 photo diode array amplifier OPA256C-1 A2LB
Text: . Max. Unit Note Register Rise time W — 30 100 ns *1 Fall time t«t> — 20 100 ns Overlap time t01,2 0 20 100 ns *2 Blank time tB1.2 — 20 100 ns *3 Phototranster Rise time tr+T — 30 , tsT 0 1 10 US Hold time tHT 0 1 10 US Reset Rise time tr«t>R — 30 100 ns *5 Fall time , Note Min. Typ. Max. Video Rise Delay Time tdrv — 55 — ns — Video Rise Time trv — 55 â , OPA256C-1 is a 256-bit, 1-dimensional diode array comprised of PN junction photodetector diodes and CCDs


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PDF OPA256C-1 OPA256C-1 256-bit, b72424rd b724540 b72424G R2h DIODE CCDs Charge Coupled Devices images of 74107 photo diode array amplifier A2LB
oki oc340

Abstract: transister OC340 B724e
Text: . Cathode 3. NC 4: Emitter 5: Collector 6: Base (LED) (LED) ( Photo transistor ) ( Photo transistor ) ( Photo , Rise Time tr — — 4 - us Characteristics Fall Time tf 4 us * Specifications are subject to , OKI electronic components QC340_ PHOTO COUPLER GENERAL DESCRIPTION The OC34C) is a photo , different phases or for isolation of ground loops. FEATURES • Current transfer ratio: 30% min. â , transformer • Power separating circuit • Level conversion circuit • Optically coupled transistor


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PDF QC340_ OC34C) OC340 E86831 b724E40 322ered OC340 oki oc340 transister B724e
photo transister

Abstract: PHOTO TRANSISTOR transister "photo transistor" photo coupler photo coupler specification OC340
Text: . Cathode (LED) 3. NC 4: Emitter ( Photo transistor ) 5: Collector ( Photo transistor ) 6: Base ( Photo , Rise Time tr — — 4 - us Characteristics Fall Time tf 4 us * Specifications are subject to , OKI electronic components QC340_ PHOTO COUPLER GENERAL DESCRIPTION The OC34C) is a photo , different phases or for isolation of ground loops. FEATURES • Current transfer ratio: 30% min. â , transformer • Power separating circuit • Level conversion circuit • Optically coupled transistor


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PDF QC340_ OC34C) OC340 E86831 b724E40 OC340 photo transister PHOTO TRANSISTOR transister "photo transistor" photo coupler photo coupler specification
cds photo diode

Abstract: OD44L T36 diode Photo transistor with open base automatic light control with photo diode photo sensor devices
Text: *- PHOTO SENSORS In the base region of the photo transistor , the absorbed light carriers drop at the , (a) of an ordinary transistor are obtained in a way sim ilar to those of a photo transistor , where intensity (or light quanta) is obtained as a parameter. Figure 3. Operation mode of photo transistor Q , characteristics (a) Ordinary transistor (b) Photo transistor In other words, Instead of base current , input of a photo transistor is light input and depending on the circumstances, the base lead is not used


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PDF
MRD3056

Abstract: photo transistor mrd3056 light operated scr alarm MRD3055 FX 10 xenon MRD3050 2n5060 transistor MRD3051 MRD3054 MCR218-8
Text: MRD3055 MRD3056 1 'L 0.1 0.2 0.5 1.5 2 - _ mA Photo Current Saturated Rise Time (Note 3) 5 tr(sat) - 1 — us Photo Current Saturated Fall Time (Note 3) 5 tf(sat) - 10 — fx s Photo Current Rise Time (Note 4} 5 tr - 2 — us Photo Current Fall Time (Note 4) 5 tf - 3.5 — fxS Wavelength of Maximum , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Photo Detectors Transistor Output . designed for , switching time measurements, radiation is provided by a pulsed xenon arc lamp with a pulse width of


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PDF Vo060 MCR218-8 MRD3056 photo transistor mrd3056 light operated scr alarm MRD3055 FX 10 xenon MRD3050 2n5060 transistor MRD3051 MRD3054
PT8L

Abstract: CE01 SE301A LC-2270 NEC Corporation
Text: soldering time of 5 sec. or less. PT8L is an NPN epitaxial type silicon transistor using TO-18 metal stem , '^^^^ÊÈÊÊÊÊÊÊÊÈÊÊ PHOTO TRANSISTOR PT8L MPN EPITAXIAL TYPE SILICON PHOTO TRANSISTOR PACKAGE DIMENSIONS (Unit: mm) 5.5 MAX. I«-H 4.8 MAX. Light entrance 2.54 , receiving blocks of photocouplers and photo interrupters • Optical choppers Document No. LC-2270 (O.D.No , Voltage vCE(sat) 0.3 V lc = 0.1 mA, L* = 500 Ix Rise Time V 5 MS Vcc = 10 V, lc = 2 mA, R[_ = 100 ft


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PDF
Not Available

Abstract: No abstract text available
Text: cut-off type photo transistor which blocks light with frequencies of 700nm or above is used. However, the , : release time , light block time , and switching time of photo interrupter when the disk is rotating , INFRARED LED + PHOTO TRANSISTOR TLP833 (TLP833) COPIER, PAGE PRINTER, FACSIMILE VCR, M IC R , power GaAs LED and a fast-response Si photo transistor . The package has a deep gap. • â , Wavelength Current Transfer Ratio Collector-Emitter COUPLED Saturation Voltage Rise Time Fall Time


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PDF TLP833 TLP833) TLP833 UL94-V0) Ta-25Â
DS0026CN

Abstract: sn7404 HC801 TCD102C-1 2SA1015 T-41-55 logic gate diagram of ic tri linear CCD
Text: MIN. TYP. MAX. UNIT Pulse Timing of SH and ^ ti , t5 0 100 - nsec SH Rise Time , Fall Time t2 . t4 0 50 - nsec SH Pulse Width t3 60 300 - nsec 2 Rise Time , Fall Time t6 , t7 0 100 - nsec RS Rise Time , Fall Time t8 • fc10 0 20 - nsec RS Pulse Width t9 40 250 - nsec Pulse Timing of (fij^i)>2 and RS tu 10 250 - nsec SP Rise Time , Fall Time ti2. t!4 10 20 - nsec SP Pulse Width tl3 60 100 , circuitry. FEATURES: Number of Image Sensing Elements: Image Sensing Element Size: Photo Sensor Structure


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PDF TCD102C-1 T-41-55 TDS102C-1 TCD102C-1 4D22D-C) 14/imxgQ48 Q25-Q05 DS0026CN sn7404 HC801 2SA1015 T-41-55 logic gate diagram of ic tri linear CCD
AVERAGE QUASI PEAK AND PEAK DETECTOR

Abstract: nixie tube circuit
Text: resistance loss of a photo transistor effectively can be calculated for a localized position as l2Rs, where I , . However, since this is an indirect-gap type of photo transistor material, the quantum efficiency is not , directional characteristics of liquid type GaAs LED, OLD 125 and photo transistor T36 with coupling , a combination of an LED and a photo transistor is controlled by the switching characteristic of the , photo energy are di vided into two large categories, depending on structure. Each of these two


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PDF
Not Available

Abstract: No abstract text available
Text: transistor ) ( Photo transistor ) ( Photo transistor ) 362 -+OC340# ABSOLUTE MAXIMUM RATINGS , resistance Input-to-output capacitance Response Rise time istics Symbol VF IR BV CEO BV COO BV EBO hFE , O K I electronic components OC340 PHOTO COUPLER G EN ER A L DESCRIPTION The 0 0 3 4 0 is a , different phases or for isolation of ground loops. FE A T U R E S · Current transfer ratio: 30% min. · , circuit · Level conversion circuit · Optically coupled transistor circuit 361 #0C 340#> PIN


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PDF OC340 OC340 E86831
2002 - Not Available

Abstract: No abstract text available
Text: IS650A IS651A MATCHED EMITTER DETECTOR PAIR PHOTO TRANSISTOR OUTPUT PACKAGES 4.0 mm CIRCUIT , Photo Transistor ) are matched Emitter Detector Pair mounted in clear plastic lateral side looking , On-State Collector Current IC(ON) (Distance from Tip of Lens to Tip of Lens is 0.125" (3.18mm) Output Rise , reliability in a low cost housing. Isocom Ltd supplies a multitude of plastic optocouplers for all applications varying from standard transistor optos through to Darlington and Schmitt Trigger devices. It


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PDF IS650A IS651A IS650A IS651A
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