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RZ2833B60W datasheet (1)

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RZ2833B60W Philips Semiconductors Pulsed Microwave Power Transistor Original PDF

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RZ2833B60W

Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE ObE D bfc.53131 0015257 5 RZ2833B60W r-3^3- » ^ PULSED MICROWAVE , Manufacturer N AUER PHILIPS/DISCRETE ObE D bbS3T31 ODlSESfl M RZ2833B60W MECHANICAL DATA Fig. 1 FO-57D r , RZ2833B60W Rthi-mb max- 2'5 K/w zthj-mb tyP-Rth mb-h tyP- 0,8 K/W 0,3 K/W 7Z2415à , /DISCRETE □ bE J> bbS3T31 ODISELO 2 RZ2833B60W T-33 -13 input 50« ezj output son Fig, 3 Broadband , ) 40 30 20 2.6 2.8 3.0 f (GHz) 3.2 J RZ2833B60W T-33 Fig. 5 Collector efficiency as a function


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PDF RZ2833B60W RZ2833B60W
Not Available

Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE ObE D bbSB'm 0015257 2 RZ2833B60W T -3 -3 - \ ^ PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in , – bb53T31 0D1535S RZ2833B60W y v r - 3 MECHANICAL DATA 3 - f 3 Dimensions in mm Fig. 1 , . 400 May 1988 r i i ObE D N AMER PHILIPS/DISCRETE bbS 3131 DQ 1 SHST b RZ2833B60W , ig .6 * During pulse. May 1988 401 N AMER PHILIPS/DISCRETE RZ2833B60W □ bE J


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PDF RZ2833B60W
MX0912B250Y

Abstract: FO-57D MRB11175Y RZ2731B16W RZ1214B65Y RZ1214B35Y RZ1214B125Y RX1214B300Y RX1214B150W RV3135B5X
Text: 40 RZ2833B60W FO-57D 2.8 - 3.3 40 100 10 60 6.0 37 RZ3135B50W FO-57D 3.1 - 3.5 40 100 10 55 5.6 35


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PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W FO-91 RX1214B300Y MX0912B250Y FO-57D MRB11175Y RZ2731B16W RV3135B5X
Not Available

Abstract: No abstract text available
Text: RZ3135B42W RZ2731B60W RZ2833B60W RZ3135B50W RX2731B90W RX3034B70W FO-83 FO-83 FO-57D FO-57D FO


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PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W MRB11175Y MRB11350Y MSB11900Y
2010 - trw rf

Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power TPM4130 MRF648 C2M100
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max (W) PD V(BR)CBO foac Max (Hz) Gp (dB) Po (W) N.F. at fT··t (Hz) Ie Max JA) Mati. (Vl 36 50 50 50 60 60 50 50 40 50 jdB) Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) UMOB55 RZ2731B60W RZ2833B60W RZ3135B50W OME25 0912·25 0915-40 1618·35 OME30L MKB12100W5 BAL0204·50 UMIL60 UMIL70 2N6439 C2M70·28R BAL0105·50 0105·50 CM60·12A Acrianlnc PhilipsElec


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PDF UMOB55 RZ2731B60W RZ2833B60W RZ3135B50W OME25 OME30L MKB12100W5 BAL0204 UMIL60 UMIL70 trw rf ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power TPM4130 MRF648 C2M100
FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: RZ2833B45W RZ2833B60W RZ3135B15W RZ3135B30W RZ3135B40W RZ3135B50W RZB12050Y RZB12100Y RZB12250Y SL5500 SL5501


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PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
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