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RZ2731B60W datasheet (1)

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RZ2731B60W Philips Semiconductors Pulsed Microwave Power Transistor Original PDF

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Not Available

Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DbE D ■^ 5 3 1 3 1 QD15E37 7 A RZ2731B60W PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in , Li N AMER PHILIPS/DISCRETE ObE D bb53T31 RZ2731B60W 0015236 T ■T *33 -/5 , bbS3T31 ODISEST 0 ■JL T- 33-15 RZ2731B60W Pulsed microwave power transistor THERMAL , . N AMER PHILIPS/DISCRETE ObE D bbS3 T31 0015340 ? ■RZ2731B60W T -3 3-IS y v Fig


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PDF QD15E37 RZ2731B60W bbS3T31 DD1S241
RZ2731B60W

Abstract: FO-57D
Text: N AMER PHILIPS/DISCRETE _I I _ ObE D ■^53131 0Q15537 7 RZ2731B60W" T-33- IM- PULSED , N AMER PHILIPS/DISCRETE RZ2731B60W ObE D ■0015530 ■T-33 MECHANICAL DATA Fig. 1 FO-57D 0 1 , RZ2731B60W T- 33 -15 Rthj-mb max. 2,5 K/W typ. typ. 0,8 K/W 0,3 K/W 200 ptot (W) 100 , /DISCRETE RZ2731B60W ObE D ■EabSBIBl 0015B4Q 7 T-33-IS input Bon v;/;. fyTzzzzzzzz. ea output , – =] RZ2731B60W T'3?>~IS 50 (X) 40 30 20 2.6 2.8 3.0 3.2 f (GHz) Fig, 5 Collector efficiency as a


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PDF 0Q15537 RZ2731B60W" 0Q15E RZ2731B60W RZ2731B60W FO-57D
Not Available

Abstract: No abstract text available
Text: ■3 3 -1 3 RZ2731B60W IX PH IL IP S INTERNATIONAL SbE D ■711GflSb OD4tiS7ö GAS , domestic waste. RZ2731B60W PHILIPS INTERNATIONAL sfeiE t > m ? i i o a a b ooMbs?*} t u , 33— RZ2731B60W Pulsed microwave power transistor PH I L I P S 7 1 1 D 6 2 b D04bSflD 733 , . ^ | ^ J u n e 1992 445 T— 33— 13 RZ2731B60W PHILIPS 7 1 1 0 6 2 b 0 Q 4 b S 6 1 , . * In a broadband test c ircu it as shown in Fig. 3. 446 June 1992 T— 13 33— RZ2731B60W


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PDF RZ2731B60W 711GflSb 004b5flB
RZ2731B60W

Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw
Text: 33-13 RZ2731B60W PHILIPS INTERNATIONAL ZX SbE D 711002b 004L.S7Ö OflS «PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2.7 to 3.1 GHz. It is , industrial or domestic waste. This Material Copyrighted By Its Respective Manufacturer RZ2731B60W Tâ , Fig. 6 * During pulse. RZ2731B60W philips international T-33-13 SbE ]> 711062b OOMbSôl b?T


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PDF RZ2731B60W 711002b 004b5Ã RZ2731B60W tRANSISTOR 2.7 3.1 3.5 GHZ cw
MX0912B250Y

Abstract: FO-57D MRB11175Y RZ2731B16W RZ1214B65Y RZ1214B35Y RZ1214B125Y RX1214B300Y RX1214B150W RV3135B5X
Text: 6.3 38 RZ3135B42W FO-57D 3.1 - 3.5 40 100 10 42 5.7 34 RZ2731B60W FO-57D 2.7 - 3.1 40 100 10 65 6.3


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PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W FO-91 RX1214B300Y MX0912B250Y FO-57D MRB11175Y RZ2731B16W RV3135B5X
1B200Y

Abstract: MRB11040W
Text: 68 RF/Microwave Devices M icrow ave Transistors, Pulsed Power (cont.) Type No. Package Outline f (GHz) vcc (V) tp @ (us) Duty Cycle (% ) Pl (W) GP (dB) T T C (% ) RADAR PULSED, S-BAND RZ2731B16W RZ3135B14W RZ2731B32W RZ3135B28W RZ2731B48W RZ3135B42W RZ2731B60W RZ3135B50W RV3135B5X RX2731B90W RX3034B70W FO-57D FO-57D FO-57D FO-57D FO-57D FO-57D FO-57D FO-57D FO-83 FO-125A FO-125A 2.7 3.1 2.7 3.1 2.7 3.1 2.7 3.1 3.1 2.7 3.0 3.1 3.5 3.1 3.5 3.1 3.5 3.1 3.5 3.5 3.1 3.4 40 40 40 40 40


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PDF RZ2731B16W RZ3135B14W RZ2731B32W RZ3135B28W RZ2731B48W RZ3135B42W RZ2731B60W RZ3135B50W RV3135B5X RX2731B90W 1B200Y MRB11040W
Not Available

Abstract: No abstract text available
Text: RZ3135B42W RZ2731B60W RZ2833B60W RZ3135B50W RX2731B90W RX3034B70W FO-83 FO-83 FO-57D FO-57D FO


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PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W MRB11175Y MRB11350Y MSB11900Y
2010 - trw rf

Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power TPM4130 MRF648 C2M100
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max (W) PD V(BR)CBO foac Max (Hz) Gp (dB) Po (W) N.F. at fT··t (Hz) Ie Max JA) Mati. (Vl 36 50 50 50 60 60 50 50 40 50 jdB) Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) UMOB55 RZ2731B60W RZ2833B60W RZ3135B50W OME25 0912·25 0915-40 1618·35 OME30L MKB12100W5 BAL0204·50 UMIL60 UMIL70 2N6439 C2M70·28R BAL0105·50 0105·50 CM60·12A Acrianlnc PhilipsElec


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PDF UMOB55 RZ2731B60W RZ2833B60W RZ3135B50W OME25 OME30L MKB12100W5 BAL0204 UMIL60 UMIL70 trw rf ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power TPM4130 MRF648 C2M100
bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: RZ2731B60W RZ3135B14W RZ3135B28W RZ3135B42W RZ3135B50W RZB12050Y RZB12100Y RZB12250Y VN2406L VN2410L Page


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PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
BGY41

Abstract: BFW10 FET transistor CQY58 germanium germanium transistor zener phc 283 to92 600a transistor bf199 bd643 BTW58
Text: No file text available


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PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium germanium transistor zener phc 283 to92 600a transistor bf199 bd643 BTW58
MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: No file text available


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PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram
transistor f6 13003

Abstract: equivalent transistor bj 131-6 BB112 transistor Eb 13003 BM philips om345 transistor bf 175 TRANSISTOR 131-6 BJ 026 Om175 BU705 a1211 lg
Text: No file text available


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PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 BB112 transistor Eb 13003 BM philips om345 transistor bf 175 TRANSISTOR 131-6 BJ 026 Om175 BU705 a1211 lg
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