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FIN1531M Rochester Electronics LLC Line Driver, 4 Func, 4 Driver, PDSO16, 0.150 INCH, MS-012, SOIC-16
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SN65LVDS4RSET Texas Instruments 500-Mbps LVDS single high-speed transceiver 10-UQFN -40 to 85
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RT0603R-821-M datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
RT0603R-821-M RT0603R-821-M ECAD Model Susumu Resistors - Chip Resistor - Surface Mount - RES SMD 820 OHM 20% 1/20W 0201 Original PDF

RT0603R-821-M Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - SAE230VX

Abstract: SAE500VX SAE500VS SAE500 avalanche photodiode
Text: package. FEATURES High Quantum Efficiency Low Noise, High Speed Multiplication gain, M >100 available 500 m Diameter Active Area Gradual Multiplication Curve Wide Operating Temperature Range , , info@lasercomponents.com USA: LASER COMPONENTS IG, Inc., Phone: +1 603 821 7040, Fax: +1 603 821 7041 , Breakdown Voltage @ ld= 10 A Responsivity @ peak & M = 100 Vbr Temperature Coefficient Dark Current @ M =100 Noise Current @ M =100 Capacitance @ M =100 Rise Time @ M =100 Typ 230 150 30 230 38 0.2 10 0.6 4 450 0.5


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PDF SAE500VS SAE500VX SAE230VX SAE500 avalanche photodiode
kemet capacitor C0603

Abstract: 224 K capacitor EIA481-1 j 182 C1812 C1210 561 6.3v C0805C103K5RAC C0805 C0402
Text: K, M ,J 6.3V 151 181 221 271 331 391 471 561 681 821 102 122 152 182 222 272 332 , 229 or 0.50 pF = 508) CAPACITANCE TOLERANCE B ­ ±0.10pF J ­ ±5% C ­ ±0.25pF K ­ ±10% D ­ ±0.5pF M , ,000 1,500,000 1,800,000 2,200,000 CAP . TOL. K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M


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PDF EIA481-1. IEC60286-6 kemet capacitor C0603 224 K capacitor EIA481-1 j 182 C1812 C1210 561 6.3v C0805C103K5RAC C0805 C0402
2009 - SARP500

Abstract: SAR-500
Text: Efficiency Low Noise, High Speed Multiplication gain, M >200 available 500 m Diameter Active Area Gradual , 11, info@lasercomponents.com USA: LASER COMPONENTS IG, Inc., Phone: +1 603 821 7040, Fax: +1 603 821 , (peak) & M = 100 Vbr Temperature Coefficient Dark Current @ M =100 Noise Current @ M =100 Capacitance @ M =100 Rise Time @ M =100 0.2 1.5 450 Typ 500 170 50 270 60 1 1.5 2 3 1 3 350 170 50 Max Min SARP500X Typ 500 270 60 1 0.5 0.1 1.5 450 2 1 0.2 3 350 Max Units m Volt A/W V/°C nA pA/sqrtHz pF psec Page 2


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PDF SAR500-Series SARP500-Series SAR500 SARP500 SAR-500
2011 - Not Available

Abstract: No abstract text available
Text: www.lasercomponents.com USA Laser Components USA, Inc. Tel: +1 603 821 – 7040 Fax: +1 603 821 – 7041 , 70 200 USA Laser Components USA, Inc. Tel: +1 603 821 – 7040 Fax: +1 603 821 – 7041 , Electrical Characteristics @ M = 100, 25°C Part Number SAR500H2 SAR500H3 SAR500H4 SAR500H5 , - 1000 400 - 1000 nm 905 905 905 905 nm 10 k-100 M 10 k - 240 M 20 k - 470 M 20 k - 700 M Hz Supply Voltage-Vcc 3.3 5.0 3.3 or 5.0 3.3 Volt Supply


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PDF SAR500, SAR1500 SAT800, IAE200
2010 - InGaas PIN photodiode, 1550 NEP

Abstract: InGaAs Photodiode 1550nm avalanche 1550nm photodiode 5 Ghz InGaAs Avalanche Photodiode IAG-Series pin photodiode 2 GHz 1550 InGaAs APD photodiode 1550 InGaas APD photodiode, 1550 sensitivity InGaas PIN photodiode, 1550 sensitivity photodiode 1550nm nep IAG 080
Text: submount. FEATURES 80, 200 or 350 m active area Bandwidth up to 2.5 GHz Over 70% QE from 1000 to , 821 7040, Fax: +1 603 821 7041, info@laser-components.com Great Britain: LASER COMPONENTS (UK) Ltd , ) IAG 080X Parameter Active Diameter Responsivity @ M =1 1550 nm wavelength Dark Current @ M =10 Operating voltage, Vr @ M =10 Breakdown Voltage, Vbr (ld= 10 A) Capacitance Temperature coeff. of Vbr Bandwidth @ M =5 Bandwidth @ M =10 Bandwidth @ M =20 Excess Noise Factor, F @ M =10 Excess Noise Factor, F @ M =20 Noise


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2009 - IAE080X

Abstract: IAE200X InGaas PIN photodiode, 1550 sensitivity application rangefinding InGaAs APD photodiode 1550 inGaAs photodiode 1550 avalanche photodiode free space InGaas APD photodiode, 1550 sensitivity InGaas PIN photodiode, 1550 sensitivity avalanche photodiode
Text: . FEATURES 80 or 200 m active area Typical bandwidth over 400 MHz Over 70% QE from 1000 to 1650 nm Low , COMPONENTS IG, Inc., Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com Great Britain , Operating Temperature* Optical Power (cw) (beam spot > 50 m diameter) IAE200X Units °C °C mW mA V mA °C , Current Noise Current Capacitance Bandwidth Typ 80 40 8 10 0.1 3 0.2 0.8 1000 12 0.4 1.0 80 Max Units m , Units m Volt A/W V/°C nA pA/sqrt Hz pF MHz Page 2 Germany and other countries: LASER COMPONENTS


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2001 - 475 10v

Abstract: 684 k 100 224 K capacitor Mj333 473 capacitor J273K MJ-82-2
Text: ±0.5pF M ­ ±20% F ­ ±1% P ­ (GMV) ­ special order only G ­ ±2% Z ­ +80%, -20% END METALLIZATION , , M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J ® CERAMIC CHIP/STANDARD X7R CAPACITANCE RANGE ­ 0402, 0603, 0805, 1206 C0402* 10V 16V


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PDF EIA481-1. IEC60286-6 475 10v 684 k 100 224 K capacitor Mj333 473 capacitor J273K MJ-82-2
2009 - SAE500NX

Abstract: SAE230NS avalanche photodiode noise factor 0E-07 SAE230NX m8 smd rise time avalanche photodiode
Text: , M >100 available 230 m and 500 m Diameter Active Area Gradual Multiplication Curve Wide Operating , COMPONENTS IG, Inc., Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com Great Britain , Voltage @ ld= 10 A Responsivity @ peak & M = 100 Vbr Temperature Coefficient Dark Current @ M =100 Noise Current @ M =100 Capacitance @ M =100 Rise Time @ M =100 Typ 230 150 45 230 50 0.6 1.0 0.2 1.0 500 1.5 3.0 0.5 1.5 300 Max Units m Volt A/W V/°C nA pA/sqrt Hz pF psec 150 45 Min SAE500NX Typ 500 230 50 0.6 1.5


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PDF SAE230NS SAE500NS SAE230NX SAE500NX avalanche photodiode noise factor 0E-07 m8 smd rise time avalanche photodiode
2013 - IAG 080

Abstract: photodiode ingaas ghz
Text: www.lasercomponents.com Typ 1550 USA Laser Components USA, Inc. Tel: +1 603 821 – 7040 Fax: +1 603 821 â , 0.94 1.05 A/W Dark Current @ M = 10 - 1 15 - 8 25 - 190 250 nA Operating voltage, Vr @ M = 10 - 55 70 43 55 75 30 45 60 Volt 40 65 80 , 0.075 - V/°C - - - 0.5 1.5 2.0 - 0.6 - GHz Bandwidth @ M = 10 2.0 2.5 3.0 1 1.5 2.0 - 0.6 - GHz Bandwidth @ M = 20 1.5 2.2 2.5


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2012 - IAG200

Abstract: SAR1500H3 IAG080H2
Text: www.lasercomponents.com USA Laser Components USA, Inc. Tel: +1 603 821 – 7040 Fax: +1 603 821 – 7041 , mW 200 USA Laser Components USA, Inc. Tel: +1 603 821 – 7040 Fax: +1 603 821 – 7041 , SARXXXXH2/H3/H4/H5-Series Fig. 1: Spectral Response (@ M = 100, H2-Receiver) Fig. 2: Quantum Efficiency vs. Wavelength Electrical Characteristics @ M = 100, Ta = 25°C (typical values) Part Number , nm 10 k-100 M 10 k - 240 M 20 k - 470 M 20 k - 700 M Hz Supply Voltage-Vcc 3.3


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PDF SAR500, SAR1500 SAT800, IAG200 SAR1500H3 IAG080H2
2012 - Not Available

Abstract: No abstract text available
Text: P RE L I M I NARY Detectors UV-Enhanced Silicon Avalanche Photodiode SUR-Series , www.lasercomponents.com USA Laser Components USA, Inc. Tel: +1 603 821 – 7040 Fax: +1 603 821 – 7041 , Components USA, Inc. Tel: +1 603 821 – 7040 Fax: +1 603 821 – 7041 info@laser-components.com , 200 mm 300 V Responsivity @ M = 100 260 nm 300 nm 350 nm 400 nm 650 nm 21 22 25 28 44 NEP @ M = 100 280 nm 300 nm 350 nm 400 nm 22 20 18 16 fW/sqrt fW/sqrt fW/sqrt fW


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2009 - 905D1S03UA

Abstract: 905D1S3J09UA 905D1S3J03UA
Text: 11, info@lasercomponents.com USA: LASER COMPONENTS IG, Inc., Phone: +1 603 821 7040, Fax: +1 603 821 , lth typ. Max. current IFM at 100 ns Forward voltage at IMAX 905D1S03UA 6W 75 x 1 m 200 mA 7A 3.5 V 905D1S09UA 19 W 230 x 1 m 600 mA 22 A 3.5 V 905D1S3J03UA 25 W 85 x 10 m 300 mA 11 A 12 V 905D1S3J06UA 50 W 160 x 10 m 500 mA 22 A 11 V 905D1S3J09UA 75 W 235 x 10 m 800 mA 30 A 11 V ABSOLUTE MAXIMUM RATINGS , 821 7040, Fax: +1 603 821 7041, info@laser-components.com Great Britain: LASER COMPONENTS (UK) Ltd


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PDF 905D1SxxUA-Series 905d1sxxua 905D1S03UA 905D1S3J09UA 905D1S3J03UA
2009 - IAG 080

Abstract: No abstract text available
Text: 11, info@lasercomponents.com USA: LASER COMPONENTS IG, Inc., Phone: +1 603 821 7040, Fax: +1 603 821 , ) IAG 080X Parameter Active Diameter Responsivity @ M =1 1550 nm wavelength Dark Current @ M =10 Operating voltage, Vr @ M =10 Breakdown Voltage, Vbr (ld= 10 μA) Capacitance Temperature coeff. of Vbr , 0.07 - 0.075 - - 0.075 - V/°C Bandwidth @ M =5 - - - 0.5 1.5 2.0 - 0.6 - GHz Bandwidth @ M =10 2.0 2.5 3.0 1 1.5 2.0 - 0.6


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2006 - Not Available

Abstract: No abstract text available
Text: modified TO46 package. FEATURES High Quantum Efficiency Low Noise, High Speed Multiplication gain, M , 821 7040, Fax: +1 603 821 7041, info@laser-components.com Great Britain: LASER COMPONENTS (UK) Ltd , µA Responsivity @ λ peak & M = 100 Vbr Temperature Coefficient Typ 500 180 230 30 µm 300 38 Volt A/W 0.2 0.5 V/°C Dark Current @ M =100 10 30 nA Noise Current @ M =100 0.6 1.0 pA/sqrtHz Capacitance @ M =100 4 6 pF Rise Time @ M


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PDF SAE500VS SAE500VX
2005 - rangefinding

Abstract: Photodiode apd high sensitivity SAR-500 avalanche photodiode noise factor
Text: -18 package. FEATURES Very High Quantum Efficiency Low Noise, High Speed Multiplication gain, M >200 , 821 7040, Fax: +1 603 821 7041, info@laser-components.com Great Britain: LASER COMPONENTS (UK) Ltd , M = 100 Vbr Temperature Coefficient Typ 500 200 270 45 µm 350 50 Volt A/W 0.6 1.5 V/°C Dark Current @ M =100 1 3 nA Noise Current @ M =100 0.2 1 pA/sqrtHz Capacitance @ M =100 2 4 pF Rise Time @ M =100 450 psec Page 2


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PDF SAR500S SAR500S rangefinding Photodiode apd high sensitivity SAR-500 avalanche photodiode noise factor
2000 - Not Available

Abstract: No abstract text available
Text: , 0805, 1206 CAP . TOL. K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J K, M ,J 10V 151 181 221 271 331 391 471 561 681 821 102 122 152 182 222 272 , TOLERANCE B ­ ±0.10pF J ­ ±5% C ­ ±0.25pF K ­ ±10% D ­ ±0.5pF M ­ ±20% F ­ ±1% P ­ (GMV) G ­ ±2% Z ­ +80%


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PDF EIA481-1. IEC60286-6
2011 - 905D1S03UA

Abstract: 905D1S3J06UA 905D1S3J09UA 905D1S3
Text: 11, info@lasercomponents.com USA: LASER COMPONENTS USA, Inc., Phone: +1 603 821 7040, Fax: +1 603 821 , lth typ. Max. current IFM at 100 ns Forward voltage at IMAX 905D1S03UA 6W 75 x 1 m 200 mA 7A 3.5 V 905D1S09UA 19 W 230 x 1 m 600 mA 22 A 3.5 V 905D1S3J03UA 25 W 85 x 10 m 300 mA 11 A 12 V 905D1S3J06UA 50 W 160 x 10 m 500 mA 22 A 11 V 905D1S3J09UA 75 W 235 x 10 m 800 mA 35 A 11 V ABSOLUTE MAXIMUM RATINGS , 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com Great Britain: LASER COMPONENTS (UK) Ltd


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PDF 905D1SxxUA-Series 905d1sxxua 905D1S03UA 905D1S3J06UA 905D1S3J09UA 905D1S3
Kenwood x - 91

Abstract: nokia 1208 sf 249 HX-340 M/TRANSISTOR sf 249 TSM 1416 HT 1632 C 1208 GE TK-300 MPS 1012
Text: . Connector User $300<$300 $1000 >81000 CELLULAR TELEPHONE ANTENNAS OCXS 821 TN,TSM,SF,SFO,SM,SMG, MGA,MGN,MGP,M7 21.08 10.12 9.70 9.28 ' 46 DCXC 821 TN> SF,M4,M4A,M4M,M4U, M5,M5A,M5L , 47 DCXE 821 48 DCXF 821 TN.MU 32.19 15.45 14.81 14.16 49 DCXR 821 TN,MU 32.40 15.55 14.90 14.26 50 DCPU 821 M4,M4U,M5,M5M,M5A,M6A, M6N.M6P 45 21.08 10.12 9.70 9.28 46 47 48 49 SO 51 51 DCSC 821 TN,MU,PL259


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PDF SBTB3400 Kenwood x - 91 nokia 1208 sf 249 HX-340 M/TRANSISTOR sf 249 TSM 1416 HT 1632 C 1208 GE TK-300 MPS 1012
2005 - avalanche photodiode bias

Abstract: No abstract text available
Text: . FEATURES High Quantum Efficiency Low Noise, High Speed Multiplication gain, M >100 available 230 µm and , , info@lasercomponents.com USA: LASER COMPONENTS IG, Inc., Phone: +1 603 821 7040, Fax: +1 603 821 7041 , & M = 100 Vbr Temperature Coefficient Dark Current @ M =100 Typ Max 230 150 230 50 , 5.0 Noise Current @ M =100 0.2 0.5 0.2 0.5 Capacitance @ M =100 1.0 1.5 nA pA/sqrt Hz pF 2.0 3.0 nA pA/sqrt Hz pF Rise Time @ M =100 500 750 psec


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PDF SAE230NS SAE500NS SAE230NX avalanche photodiode bias
2010 - SAR150

Abstract: SAR1500 SAR3000 SAR300
Text: . FEATURES Very High Quantum Efficiency Low Noise, High Speed Multiplication gain, M >100 available 1.5 , 11, info@lasercomponents.com USA: LASER COMPONENTS IG, Inc., Phone: +1 603 821 7040, Fax: +1 603 821 , = 10 A Responsivity @ (peak) & M = 100 Vbr Temperature Coefficient Dark Current @ M =100 Noise Current @ M =100 Capacitance @ M =100 Rise Time @ M =100 Typ 1500 170 50 270 60 2 0.75 0.3 4 500 3.2 5 1 350 170 50 Max Min SAR3000x Typ 3000 270 60 2 1 0.5 7 500 3.2 10 1,5 350 Max Units m Volt A/W V/°C nA pA/sqrt


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PDF SAR1500x/3000x SAR1500/3000x SAR1500x 3000x sar1500-3000x SAR150 SAR1500 SAR3000 SAR300
Not Available

Abstract: No abstract text available
Text: USA, Inc. Tel: +1 603 821 – 7040 Fax: +1 603 821 – 7041 info@laser-components.com , 0.85 0.90 1.00 0.85 0.90 0.95 0.90 0.94 1.05 A/W Dark Current @ M = 10 - 1 15 - 8 25 - 190 250 nA Operating voltage, Vr @ M = 10 - 55 , 0.5 1.5 2.0 - 0.6 - GHz Bandwidth @ M = 10 2.0 2.5 3.0 1 1.5 2.0 - 0.6 - GHz Bandwidth @ M = 20 1.5 2.2 2.5 0.5 1.0 1.5 - 0.6 -


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TO-59 Package

Abstract: No abstract text available
Text: efficiency Low noise, high speed Multiplication gain, M >200 available 500 µm diameter active area , www.lasercomponents.com USA Laser Components USA, Inc. Tel: +1 603 821 – 7040 Fax: +1 603 821 – 7041 , : +1 603 821 – 7040 Fax: +1 603 821 – 7041 info@laser-components.com www.laser-components.com , -/SARP-Series Detectors Electrical Characteristics Ta = 25°C, M = 100 SAR500X SARP500X Min Min , . 1: Spectral Response @ M = 100 psec Fig. 2: Quantum Efficiency vs. Wavelength 70 1,0 0


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PDF SAR500-Series SARP500-Series SAR500 SARP500 TO-59 Package
Not Available

Abstract: No abstract text available
Text: USA, Inc. Tel: +1 603 821 – 7040 Fax: +1 603 821 – 7041 info@laser-components.com , 0.85 0.90 1.00 0.85 0.90 0.95 0.90 0.94 1.05 A/W Dark Current @ M = 10 - 1 15 - 8 25 - 190 250 nA Operating voltage, Vr @ M = 10 - 55 , 0.5 1.5 2.0 - 0.6 - GHz Bandwidth @ M = 10 2.0 2.5 3.0 1 1.5 2.0 - 0.6 - GHz Bandwidth @ M = 20 1.5 2.2 2.5 0.5 1.0 1.5 - 0.6 -


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2006 - Not Available

Abstract: No abstract text available
Text: Multiplication gain, M >100 available 230 µm and 500 µm Diameter Active Area Gradual Multiplication Curve , ., Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com Great Britain: LASER COMPONENTS , CHARACTERISTICS SAE230NX Min Diameter Breakdown Voltage @ ld= 10 µA Responsivity @ λ peak & M = 100 Vbr Temperature Coefficient Dark Current @ M =100 Typ Max 230 150 230 45 SAE500NX Units , Current @ M =100 0.2 0.5 0.2 0.5 Capacitance @ M =100 1.0 1.5 nA pA/sqrt Hz pF


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PDF SAE230NS SAE500NS SAE23
2009 - SAT800X

Abstract: SAT3000 SAT3000x . LIDAR avalanche Photodiode 300 nm photodiode SAT3000 TO-37
Text: Efficiency Low Noise, High Speed Multiplication gain, M >100 available 800 m or 3.0 mm Diameter Active Area , 821 7040, Fax: +1 603 821 7041, info@laser-components.com Great Britain: LASER COMPONENTS (UK) Ltd , 60 200 Units °C °C A mA mA mA mW °C ELECTRICAL CHARACTERISTICS @ M = 100, 25°C SAT800 Min Diameter Breakdown Voltage (ld= 10 A) Responsivity ( M =100 & = 1064 nm) Vbreakdown Temp Coefficient Dark Current ( M = 100) Noise Current ( M = 100) Capacitance ( M = 100) Rise Time ( M = 100) Typ 800 400 20 25 2.5 1 0.5 2 1 10


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PDF sat3000x SAT800X SAT3000 . LIDAR avalanche Photodiode 300 nm photodiode SAT3000 TO-37
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